FIG. 2.
Output characteristics of single work function (SWF) SGT (a), double work function (DWF) TFT (b), and double dope function (DDF) TFT (c). (d) Output characteristics of DDF TFTs at VG = 15 V and for varying semiconductor film thickness (d). The Schottky barrier height used is 0.75 eV, the Schottky part length is Ls = 200 nm, the channel length is L = 200 nm, and for (a)–(c) d = 30 nm. The current is normalized to the channel's width.