FIG. 1.
(a) The x-ray diffraction pattern of VO2/NiO/sapphire thin-film heterostructures above the critical thickness of ≈10 nm in the pristine, vacuum annealed at low and high temperatures (marked as VA-low T and VA-high T, respectively), and oxygen annealed samples. (b) The low-mag cross-sectional HAADF image of VO2/NiO/sapphire heterostructures showing VO2 thickness above the critical thickness, and (c) represents the atomically sharp interface of the VO2/NiO.

(a) The x-ray diffraction pattern of VO2/NiO/sapphire thin-film heterostructures above the critical thickness of ≈10 nm in the pristine, vacuum annealed at low and high temperatures (marked as VA-low T and VA-high T, respectively), and oxygen annealed samples. (b) The low-mag cross-sectional HAADF image of VO2/NiO/sapphire heterostructures showing VO2 thickness above the critical thickness, and (c) represents the atomically sharp interface of the VO2/NiO.

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