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FIG. 3.

(a) Kinetic inductance L_k vs gate voltage V_G for a Nb-GCT at several temperatures T. Data were deduced from the expression $L_{k} = ℏ / 2 e I_{S}$ ⁠. (b) Maximum of the absolute value (⁠ $g_{m}^{MAX}$ ⁠) of the transconductance $g_{m} = d I_{s} / d V_{G}$ vs T. Data were determined from the numerical derivative of the data shown in Fig. 2(b). (c) Value of gate V_G at which the maximum of transconductance $| g_{m}^{MAX} |$ occurs as a function of T. (d) Gate-DB current I_GB vs V_G at 30 mK.

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