TABLE I.

Comparison of the data for optically pumped stimulated emissions obtained on our semi-polar (11-22) and c-plane GaN from other groups and our group.

ReferenceEthStructure
H. Amano, et al12  0.7 MW/cm2 c-plane GaN on sapphire 
A. S. Zubrilov, et al13  3.4 MW/cm2 c-plane GaN on SiC 
S. Sakai, et al14  0.86 MW/cm2 c-plane GaN on GaN 
Present work 0.725 MW/cm2 Our overgrown semi-polar (11-22) GaN on m-plane sapphire 
0.576 MW/cm2 c-plane GaN grown on sapphire 
ReferenceEthStructure
H. Amano, et al12  0.7 MW/cm2 c-plane GaN on sapphire 
A. S. Zubrilov, et al13  3.4 MW/cm2 c-plane GaN on SiC 
S. Sakai, et al14  0.86 MW/cm2 c-plane GaN on GaN 
Present work 0.725 MW/cm2 Our overgrown semi-polar (11-22) GaN on m-plane sapphire 
0.576 MW/cm2 c-plane GaN grown on sapphire 
View Large
Close Modal
This Feature Is Available To Subscribers Only

or Create an Account

Close Modal
Close Modal