Page 1 | Search Results | AIP Publishing

Skip to Main Content

Skip Nav Destination

1-4 of 4

Sort by

Sort Order Select

Journal Articles

High mobility hydrogen-terminated diamond FET with h-BN gate dielectric using pickup method

Yan Huang, Junfeng Xiao, Ran Tao, Zhi Liu, Yiran Mo, Xinxin Yu, Zhengyi Cao, Yun Wu, Zhonghui Li, Haolin Wang, Lei Wang

Appl. Phys. Lett. 123, 112103 (2023)

https://doi.org/10.1063/5.0165596

Published: September 2023

View article titled, High mobility hydrogen-terminated diamond FET with h-BN gate dielectric using pickup method

Journal Articles

RF performance enhancement in sub-μm scaled β-Ga₂O₃ tri-gate FinFETs

Xinxin Yu, Hehe Gong, Jianjun Zhou, Zhenghao Shen, Fang-fang Ren, Dunjun Chen, Xin Ou, Yuechan Kong, Zhonghui Li, Tangsheng Chen, Shulin Gu, Rong Zhang, Youdou Zheng, Jiandong Ye

Appl. Phys. Lett. 121, 072102 (2022)

https://doi.org/10.1063/5.0098610

Published: August 2022

View article titled, RF performance enhancement in sub-<em>μ</em>m scaled β-Ga<sub>2</sub>O<sub>3</sub> tri-gate FinFETs

Journal Articles

Enhanced p-type conduction in AlGaN grown by metal-source flow-rate modulation epitaxy

Weike Luo, Bin Liu, Zhonghui Li, Liang Li, Qiankun Yang, Lei Pan, Chuanhao Li, Dongguo Zhang, Xun Dong, Daqing Peng, Feng Yang, Rong Zhang

Appl. Phys. Lett. 113, 072107 (2018)

https://doi.org/10.1063/1.5040334

Published: August 2018

View article titled, Enhanced p-type conduction in AlGaN grown by metal-source flow-rate modulation epitaxy

Journal Articles

Low leakage Schottky rectifiers fabricated on homoepitaxial GaN

Hai Lu, Rong Zhang, Xiangqian Xiu, Zili Xie, Youdou Zheng, Zhonghui Li

Appl. Phys. Lett. 91, 172113 (2007)

https://doi.org/10.1063/1.2795083

Published: October 2007

View article titled, Low leakage Schottky rectifiers fabricated on homoepitaxial GaN