Page 1 | Search Results | AIP Publishing

1-15 of 15

Sort by

Sort Order Select

Journal Articles

Research on the influence of titanium addition on the structure and frictional performance of laser clad tin bronze coating

Xiangwei Jin, Junxin Hou, Zhen Chen, Shaoqi Shi, Yang Zou, Zefeng Yang, Yuchuan Cheng, Gaojie Xu, Aihua Sun, Zhisheng Wu, Zhixiang Li

J. Laser Appl. 37, 012008 (2025)

https://doi.org/10.2351/7.0001667

Published: December 2024

View articletitled, Research on the influence of titanium addition on the structure and frictional performance of laser clad tin bronze coating

Journal Articles

All-solid-state AlGaN/GaN-based ion-sensitive heterostructure field effect transistor pH sensor microprobe encapsulated in medical needle

Fengge Wang, Minjie Zhang, Honghui Liu, Yanyan Xu, Zhiwen Liang, Junyu Shen, Zhengwen Xiao, Chaokun Yan, Zhisheng Wu, Yang Liu, Baijun Zhang

AIP Advances 12, 095013 (2022)

https://doi.org/10.1063/6.0001960

Published: September 2022

View articletitled, All-solid-state AlGaN/GaN-based ion-sensitive heterostructure field effect transistor pH sensor microprobe encapsulated in medical needle

Journal Articles

Mechanism of high conduction on the N polar face of GaN

Zhenxing Liu, Qianshu Wu, Yapeng Wang, Qiuling Qiu, Jinwei Zhang, Zhisheng Wu, Yang Liu

J. Appl. Phys. 131, 235701 (2022)

https://doi.org/10.1063/5.0084812

Published: June 2022

View articletitled, Mechanism of high conduction on the N polar face of GaN

Journal Articles

Low capacitance AlGaN/GaN based air-bridge structure planar Schottky diode with a half through-hole

Longkun Yang, Wanqing Yao, Yuebo Liu, Linglong Wang, Yaqiong Dai, Honghui Liu, Fengge Wang, Yuan Ren, Zhisheng Wu, Yang Liu, Baijun Zhang

AIP Advances 10, 045219 (2020)

https://doi.org/10.1063/5.0004470

Published: April 2020

View articletitled, Low capacitance AlGaN/GaN based air-bridge structure planar Schottky diode with a half through-hole

Journal Articles

Analysis and experiment of the sensitivity of AlGaN/GaN based heterostructure all-solid-state pH sensor

Yaqiong Dai, Jieying Xing, Longkun Yang, Yaohui Wen, Linglong Wang, Wanqing Yao, Xiaobiao Han, Yuan Ren, Yuebo Liu, Zhisheng Wu, Yang Liu, Baijun Zhang

AIP Advances 9, 095066 (2019)

https://doi.org/10.1063/1.5094584

Published: September 2019

View articletitled, Analysis and experiment of the sensitivity of AlGaN/GaN based heterostructure all-solid-state pH sensor

Journal Articles

Influence of an integrated quasi-reference electrode on the stability of all-solid-state AlGaN/GaN based pH sensors

Jieying Xing, Dejia Huang, Yaqiong Dai, Yuebo Liu, Yuan Ren, Xiaobiao Han, Hang Yang, Yaqian Hou, Zhisheng Wu, Yang Liu, Baijun Zhang

J. Appl. Phys. 124, 034904 (2018)

https://doi.org/10.1063/1.5034367

Published: July 2018

View articletitled, Influence of an integrated quasi-reference electrode on the stability of all-solid-state AlGaN/GaN based pH sensors

Journal Articles

Enhancement of emission of InGaN/GaN multiple-quantum-well nanorods by coupling to Au-nanoparticle plasmons

Jieying Xing, Yinsong Chen, Yuebo Liu, Jiezhi Liang, Jie Chen, Yuan Ren, Xiaobiao Han, Changming Zhong, Hang Yang, Dejia Huang, Yaqian Hou, Zhisheng Wu, Yang Liu, Baijun Zhang

J. Appl. Phys. 123, 193101 (2018)

https://doi.org/10.1063/1.5022454

Published: May 2018

View articletitled, Enhancement of emission of InGaN/GaN multiple-quantum-well nanorods by coupling to Au-nanoparticle plasmons

Journal Articles

Demonstration of solar-blind Al_xGa_1−xN-based heterojunction phototransistors

Lingxia Zhang, Shaoji Tang, Changshan Liu, Bin Li, Hualong Wu, Hailong Wang, Zhisheng Wu, Hao Jiang

Appl. Phys. Lett. 107, 233501 (2015)

https://doi.org/10.1063/1.4937389

Published: December 2015

View articletitled, Demonstration of solar-blind AlxGa1−xN-based heterojunction phototransistors

Journal Articles

High hole concentration in p-type AlGaN by indium-surfactant-assisted Mg-delta doping

Yingda Chen, Hualong Wu, Enze Han, Guanglong Yue, Zimin Chen, Zhisheng Wu, Gang Wang, Hao Jiang

Appl. Phys. Lett. 106, 162102 (2015)

https://doi.org/10.1063/1.4919005

Published: April 2015

View articletitled, High hole concentration in p-type AlGaN by indium-surfactant-assisted Mg-delta doping

Journal Articles

Improved carrier injection and efficiency droop in InGaN/GaN light-emitting diodes with step-stage multiple-quantum-well structure and hole-blocking barriers

Zhiyuan Zheng, Zimin Chen, Yingda Chen, Hualong Wu, Shanjin Huang, Bingfeng Fan, Zhisheng Wu, Gang Wang, Hao Jiang

Appl. Phys. Lett. 102, 241108 (2013)

https://doi.org/10.1063/1.4811735

Published: June 2013

View articletitled, Improved carrier injection and efficiency droop in InGaN/GaN light-emitting diodes with step-stage multiple-quantum-well structure and hole-blocking barriers

Journal Articles

Emission enhancement in GaN-based light emitting diodes with shallow triangular quantum wells

Shanjin Huang, Zimin Chen, Yulun Xian, Bingfeng Fan, Zhiyuan Zheng, Zhisheng Wu, Hao Jiang, Gang Wang

Appl. Phys. Lett. 101, 041116 (2012)

https://doi.org/10.1063/1.4739445

Published: July 2012

View articletitled, Emission enhancement in GaN-based light emitting diodes with shallow triangular quantum wells

Journal Articles

Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes

Tufu Chen, Yunqian Wang, Peng Xiang, Ruihong Luo, Minggang Liu, Weimin Yang, Yuan Ren, Zhiyuan He, Yibin Yang, Weijie Chen, Xiaorong Zhang, Zhisheng Wu, Yang Liu, Baijun Zhang

Appl. Phys. Lett. 100, 241112 (2012)

https://doi.org/10.1063/1.4729414

Published: June 2012

View articletitled, Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes

Journal Articles

Analysis and modeling of the experimentally observed anomalous mobility properties of periodically Si-delta-doped GaN layers

Zhiyuan Zheng, Zimin Chen, Yingda Chen, Shanjin Huang, Bingfeng Fan, Yulun Xian, Weiqing Jia, Zhisheng Wu, Gang Wang, Hao Jiang

Appl. Phys. Lett. 100, 212102 (2012)

https://doi.org/10.1063/1.4720395

Published: May 2012

View articletitled, Analysis and modeling of the experimentally observed anomalous mobility properties of periodically Si-delta-doped GaN layers

Journal Articles

Enhanced electrostatic discharge properties of nitride-based light-emitting diodes with inserting Si-delta-doped layers

Zhiyuan Zheng, Zimin Chen, Yulun Xian, Bingfeng Fan, Shanjin Huang, Weiqing Jia, Zhisheng Wu, Gang Wang, Hao Jiang

Appl. Phys. Lett. 99, 111109 (2011)

https://doi.org/10.1063/1.3637599

Published: September 2011

View articletitled, Enhanced electrostatic discharge properties of nitride-based light-emitting diodes with inserting Si-delta-doped layers

Journal Articles

Enhancement-mode AlGaN/GaN heterostructure field effect transistors fabricated by selective area growth technique

Yuhua Wen, Zhiyuan He, Jialin Li, Ruihong Luo, Peng Xiang, Qingyu Deng, Guangning Xu, Zhen Shen, Zhisheng Wu, Baijun Zhang, Hao Jiang, Gang Wang, Yang Liu

Appl. Phys. Lett. 98, 072108 (2011)

https://doi.org/10.1063/1.3553229

Published: February 2011

View articletitled, Enhancement-mode AlGaN/GaN heterostructure field effect transistors fabricated by selective area growth technique

Update search

NARROW

Format

Collections

Topics

Subjects

Journal

Article Type

Issue Section

Date

Availability

Research on the influence of titanium addition on the structure and frictional performance of laser clad tin bronze coating

All-solid-state AlGaN/GaN-based ion-sensitive heterostructure field effect transistor pH sensor microprobe encapsulated in medical needle

Mechanism of high conduction on the N polar face of GaN

Low capacitance AlGaN/GaN based air-bridge structure planar Schottky diode with a half through-hole

Analysis and experiment of the sensitivity of AlGaN/GaN based heterostructure all-solid-state pH sensor

Influence of an integrated quasi-reference electrode on the stability of all-solid-state AlGaN/GaN based pH sensors

Enhancement of emission of InGaN/GaN multiple-quantum-well nanorods by coupling to Au-nanoparticle plasmons

Demonstration of solar-blind Al_xGa_1−xN-based heterojunction phototransistors

High hole concentration in p-type AlGaN by indium-surfactant-assisted Mg-delta doping

Improved carrier injection and efficiency droop in InGaN/GaN light-emitting diodes with step-stage multiple-quantum-well structure and hole-blocking barriers

Emission enhancement in GaN-based light emitting diodes with shallow triangular quantum wells

Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes

Analysis and modeling of the experimentally observed anomalous mobility properties of periodically Si-delta-doped GaN layers

Enhanced electrostatic discharge properties of nitride-based light-emitting diodes with inserting Si-delta-doped layers

Enhancement-mode AlGaN/GaN heterostructure field effect transistors fabricated by selective area growth technique

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Update search

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only