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Journal Articles

Investigation of InGaN-based flexible RGB micro-light-emitting diodes and their monolithic integration

Chenxue Li, Yong Li, Yimeng Sang, Zhe Zhuang, Dongming Tang, Kun Xing, Fulin Zhuo, Yuliang Bian, Tingting Liu, Taotao Li, Ting Zhi, Tao Tao, Daisuke Iida, Kazuhiro Ohkawa, Xinran Wang, Rong Zhang, Bin Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 242112 (2024)
https://doi.org/10.1063/5.0237742
Published: December 2024
View article titled, Investigation of InGaN-based flexible RGB micro-light-emitting diodes and their monolithic integration
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Journal Articles

Self-powered MXene/GaN van der Waals Schottky ultraviolet photodetectors with exceptional responsivity and stability

Featured
Yu Ding, Xiangming Xu, Zhe Zhuang, Yimeng Sang, Mei Cui, Wenxin Li, Yu Yan, Tao Tao, Weizong Xu, Fangfang Ren, Jiandong Ye, Dunjun Chen, Hai Lu, Rong Zhang, Husam N. Alshareef, Bin Liu
Journal: Applied Physics Reviews
Appl. Phys. Rev. 11, 041413 (2024)
https://doi.org/10.1063/5.0209698
Published: October 2024
View article titled, Self-powered MXene/GaN van der Waals Schottky ultraviolet photodetectors with exceptional responsivity and stability
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Journal Articles

High-temperature performance of InGaN-based amber micro-light-emitting diodes using an epitaxial tunnel junction contact

Editor’s Pick
Yimeng Sang, Zhe Zhuang, Kun Xing, Dongqi Zhang, Jinjian Yan, Zhuoying Jiang, Chenxue Li, Kai Chen, Yu Ding, Tao Tao, Daisuke Iida, Ke Wang, Cheng Li, Kai Huang, Kazuhiro Ohkawa, Rong Zhang, Bin Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 142103 (2024)
https://doi.org/10.1063/5.0190000
Published: April 2024
View article titled, High-temperature performance of InGaN-based amber micro-light-emitting diodes using an epitaxial tunnel junction contact
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Journal Articles

Wafer-scale emission uniformity of InGaN-based red light-emitting diodes on an in situ InGaN decomposition template

Junwei Hu, Kun Xing, Zhihu Xia, Yimeng Sang, Xiaoping Yang, Tao Tao, Zhe Zhuang, Rong Zhang, Bin Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 111107 (2023)
https://doi.org/10.1063/5.0162548
Published: September 2023
View article titled, Wafer-scale emission uniformity of InGaN-based red light-emitting diodes on an <em>in situ</em> InGaN decomposition template
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Journal Articles

Demonstration of 621-nm-wavelength InGaN-based single-quantum-well LEDs with an external quantum efficiency of 4.3% at 10.1 A/cm2

Editor’s Pick
Daisuke Iida, Pavel Kirilenko, Martin Velazquez-Rizo, Zhe Zhuang, Mohammed A. Najmi, Kazuhiro Ohkawa
Journal: AIP Advances
AIP Advances 12, 065125 (2022)
https://doi.org/10.1063/5.0097761
Published: June 2022
View article titled, Demonstration of 621-nm-wavelength InGaN-based single-quantum-well LEDs with an external quantum efficiency of 4.3% at 10.1 A/cm<sup>2</sup>
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Journal Articles

Influence of plasmonic resonant wavelength on energy transfer from an InGaN quantum well to quantum dots

Zhe Zhuang, Cheng Li, Yun Zhang, Bin Liu, Xiong Zhang, Aijie Fan, Shuai Chen, Liang Lu, Yiping Cui
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 202103 (2021)
https://doi.org/10.1063/5.0045037
Published: May 2021
View article titled, Influence of plasmonic resonant wavelength on energy transfer from an InGaN quantum well to quantum dots
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Includes: Supplementary data
Journal Articles

High-color-rendering-index phosphor-free InGaN-based white light-emitting diodes by carrier injection enhancement via V-pits

Daisuke Iida, Zhe Zhuang, Pavel Kirilenko, Martin Velazquez-Rizo, Kazuhiro Ohkawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 172103 (2020)
https://doi.org/10.1063/5.0026017
Published: October 2020
View article titled, High-color-rendering-index phosphor-free InGaN-based white light-emitting diodes by carrier injection enhancement via V-pits
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Journal Articles

Effects of size on the electrical and optical properties of InGaN-based red light-emitting diodes

Editor’s Pick
Zhe Zhuang, Daisuke Iida, Kazuhiro Ohkawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 173501 (2020)
https://doi.org/10.1063/5.0006910
Published: April 2020
View article titled, Effects of size on the electrical and optical properties of InGaN-based red light-emitting diodes
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Journal Articles

633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress

Daisuke Iida, Zhe Zhuang, Pavel Kirilenko, Martin Velazquez-Rizo, Mohammed A. Najmi, Kazuhiro Ohkawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 162101 (2020)
https://doi.org/10.1063/1.5142538
Published: April 2020
View article titled, 633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress
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Journal Articles

Improvement of color conversion and efficiency droop in hybrid light-emitting diodes utilizing an efficient non-radiative resonant energy transfer

Zhe Zhuang, Jiangping Dai, Bin Liu, Xu Guo, Yi Li, Tao Tao, Ting Zhi, Guogang Zhang, Zili Xie, Haixiong Ge, Yi Shi, Youdou Zheng, Rong Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 141105 (2016)
https://doi.org/10.1063/1.4964403
Published: October 2016
View article titled, Improvement of color conversion and efficiency droop in hybrid light-emitting diodes utilizing an efficient non-radiative resonant energy transfer
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Includes: Supplementary data
Journal Articles

Optical polarization characteristics of c-plane InGaN/GaN asymmetric nanostructures

Zhe Zhuang, Yi Li, Bin Liu, Xu Guo, Jiangping Dai, Guogang Zhang, Tao Tao, Ting Zhi, Zili Xie, Haixiong Ge, Yi Shi, Youdou Zheng, Rong Zhang
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 233111 (2015)
https://doi.org/10.1063/1.4938119
Published: December 2015
View article titled, Optical polarization characteristics of <em>c</em>-plane InGaN/GaN asymmetric nanostructures
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Journal Articles

Asymmetric tunneling model of forward leakage current in GaN/InGaN light emitting diodes

Ting Zhi, Tao Tao, Bin Liu, Yi Li, Zhe Zhuang, Guogang Zhang, Zili Xie, Rong Zhang, Youdou Zheng
Journal: AIP Advances
AIP Advances 5, 087151 (2015)
https://doi.org/10.1063/1.4929400
Published: August 2015
View article titled, Asymmetric tunneling model of forward leakage current in GaN/InGaN light emitting diodes
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Journal Articles

Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

Yi Li, Bin Liu, Rong Zhang, Zili Xie, Zhe Zhuang, JiangPing Dai, Tao Tao, Ting Zhi, Guogang Zhang, Peng Chen, Fangfang Ren, Hong Zhao, Youdou Zheng
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 153103 (2015)
https://doi.org/10.1063/1.4918555
Published: April 2015
View article titled, Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface
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Journal Articles

Fabrication of wafer-scale nanopatterned sapphire substrate by hybrid nanoimprint lithography

Xu Guo, Jing Hu, Zhe Zhuang, Mengmeng Deng, Feixiang Wu, Xie Li, Bin Liu, Changsheng Yuan, Haixiong Ge, Feng Li, Yanfeng Chen
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 06FG06 (2014)
https://doi.org/10.1116/1.4898778
Published: October 2014
View article titled, Fabrication of wafer-scale nanopatterned sapphire substrate by hybrid nanoimprint lithography
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Journal Articles

Effect of the band structure of InGaN/GaN quantum well on the surface plasmon enhanced light-emitting diodes

Yi Li, Rong Zhang, Bin Liu, Zili Xie, Guogang Zhang, Tao Tao, Zhe Zhuang, Ting Zhi, Youdou Zheng
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 013101 (2014)
https://doi.org/10.1063/1.4886223
Published: July 2014
View article titled, Effect of the band structure of InGaN/GaN quantum well on the surface plasmon enhanced light-emitting diodes
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Journal Articles

Investigation of surface plasmon coupling with the quantum well for reducing efficiency droop in GaN-based light emitting diodes

Yi Li, Rong Zhang, Zili Xie, Bin Liu, Peng Chen, Guogang Zhang, Tao Tao, Zhe Zhuang, Ling Zhi, Tiansheng Gan, Youdou Zheng
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 113104 (2013)
https://doi.org/10.1063/1.4819963
Published: September 2013
View article titled, Investigation of surface plasmon coupling with the quantum well for reducing efficiency droop in GaN-based light emitting diodes
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