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Journal Articles

Trap characterization of high-growth-rate laser-assisted MOCVD GaN

Wenbo Li, Yuxuan Zhang, Zhaoying Chen, Hongping Zhao, Steven A. Ringel, Aaron R. Arehart
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 112101 (2023)
https://doi.org/10.1063/5.0159560
Published: September 2023
View article titled, Trap characterization of high-growth-rate laser-assisted MOCVD GaN
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Journal Articles

Modulation bandwidth improvement of GaN-based green micro-LEDs array by polarization-induced p-type doping

Zhen Huang, Renchun Tao, Duo Li, Zexing Yuan, Tai Li, Zhaoying Chen, Ye Yuan, Junjie Kang, Zhiwen Liang, Qi Wang, Pengfei Tian, Bo Shen, Xinqiang Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 031101 (2022)
https://doi.org/10.1063/5.0098321
Published: July 2022
View article titled, Modulation bandwidth improvement of GaN-based green micro-LEDs array by polarization-induced p-type doping
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Includes: Supplementary data
Journal Articles

Two-step growth of β-Ga2O3 films on (100) diamond via low pressure chemical vapor deposition

Md Rezaul Karim, Zhaoying Chen, Zixuan Feng, Hsien-Lien Huang, Jared M. Johnson, Marko J. Tadjer, Jinwoo Hwang, Hongping Zhao
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 023411 (2021)
https://doi.org/10.1116/6.0000854
Published: February 2021
View article titled, Two-step growth of β-Ga<sub>2</sub>O<sub>3</sub> films on (100) diamond via low pressure chemical vapor deposition
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Journal Articles

Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices

Yuxuan Zhang, Zhaoying Chen, Wenbo Li, Hyunsoo Lee, Md Rezaul Karim, Aaron R. Arehart, Steven A. Ringel, Siddharth Rajan, Hongping Zhao
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 215707 (2020)
https://doi.org/10.1063/5.0008758
Published: June 2020
View article titled, Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices
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Journal Articles

MOCVD epitaxy of β -(AlxGa1−x)2O3 thin films on (010) Ga2O3 substrates and N-type doping

A F M Anhar Uddin Bhuiyan, Zixuan Feng, Jared M. Johnson, Zhaoying Chen, Hsien-Lien Huang, Jinwoo Hwang, Hongping Zhao
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 120602 (2019)
https://doi.org/10.1063/1.5123495
Published: September 2019
View article titled, MOCVD epitaxy of <em>β</em> -(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> thin films on (010) Ga<sub>2</sub>O<sub>3</sub> substrates and N-type doping
Open the PDF for MOCVD epitaxy of <em>β</em> -(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> thin films on (010) Ga<sub>2</sub>O<sub>3</sub> substrates and N-type doping in another window
Journal Articles

Single photon source based on an InGaN quantum dot in a site-controlled optical horn structure

Xiaoxiao Sun, Ping Wang, Tao Wang, Duo Li, Zhaoying Chen, Ling Chen, Kang Gao, Mo Li, Jian Zhang, Weikun Ge, Yasuhiko Arakawa, Bo Shen, Mark Holmes, Xinqiang Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 022101 (2019)
https://doi.org/10.1063/1.5100323
Published: July 2019
View article titled, Single photon source based on an InGaN quantum dot in a site-controlled optical horn structure
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Journal Articles

Molecular beam epitaxy of single-crystalline aluminum film for low threshold ultraviolet plasmonic nanolasers

Shuanglong Liu, Bowen Sheng, Xinqiang Wang, Dashan Dong, Ping Wang, Zhaoying Chen, Tao Wang, Xin Rong, Duo Li, Liuyun Yang, Shangfeng Liu, Mo Li, Jian Zhang, Weikun Ge, Kebin Shi, Yuzhen Tong, Bo Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 231904 (2018)
https://doi.org/10.1063/1.5033941
Published: June 2018
View article titled, Molecular beam epitaxy of single-crystalline aluminum film for low threshold ultraviolet plasmonic nanolasers
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Journal Articles

High-electron-mobility InN epilayers grown on silicon substrate

Huapeng Liu, Xinqiang Wang, Zhaoying Chen, Xiantong Zheng, Ping Wang, Bowen Sheng, Tao Wang, Xin Rong, Mo Li, Jian Zhang, Xuelin Yang, Fujun Xu, Weikun Ge, Bo Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 162102 (2018)
https://doi.org/10.1063/1.5017153
Published: April 2018
View article titled, High-electron-mobility InN epilayers grown on silicon substrate
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Journal Articles

Positive temperature coefficient of photovoltaic efficiency in solar cells based on InGaN/GaN MQWs

Zhaoying Chen, Xiantong Zheng, Zhilong Li, Ping Wang, Xin Rong, Tao Wang, Xuelin Yang, Fujun Xu, Zhixin Qin, Weikun Ge, Bo Shen, Xinqiang Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 062104 (2016)
https://doi.org/10.1063/1.4960765
Published: August 2016
View article titled, Positive temperature coefficient of photovoltaic efficiency in solar cells based on InGaN/GaN MQWs
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