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Journal Articles

High-efficiency small-pixel-size InGaN green micro-LED arrays using ion implantation pixelization

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Zexing Yuan, Chaofan Ma, Yan Wang, Zhaoying Chen, Fang Liu, Ping Wang, Ye Yuan, Xinyi Shan, Handan Xu, Pengfei Tian, Bo Shen, Xinqiang Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 101101 (2025)
https://doi.org/10.1063/5.0248265
Published: March 2025
View articletitled, High-efficiency small-pixel-size InGaN green micro-LED arrays using ion implantation pixelization
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Journal Articles

Trap characterization of high-growth-rate laser-assisted MOCVD GaN

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Wenbo Li, Yuxuan Zhang, Zhaoying Chen, Hongping Zhao, Steven A. Ringel, Aaron R. Arehart
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 112101 (2023)
https://doi.org/10.1063/5.0159560
Published: September 2023
View articletitled, Trap characterization of high-growth-rate laser-assisted MOCVD GaN
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Journal Articles

Modulation bandwidth improvement of GaN-based green micro-LEDs array by polarization-induced p-type doping

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Zhen Huang, Renchun Tao, Duo Li, Zexing Yuan, Tai Li, Zhaoying Chen, Ye Yuan, Junjie Kang, Zhiwen Liang, Qi Wang, Pengfei Tian, Bo Shen, Xinqiang Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 031101 (2022)
https://doi.org/10.1063/5.0098321
Published: July 2022
View articletitled, Modulation bandwidth improvement of GaN-based green micro-LEDs array by polarization-induced p-type doping
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Includes: Supplementary data
Journal Articles

Two-step growth of β-Ga2O3 films on (100) diamond via low pressure chemical vapor deposition

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Md Rezaul Karim, Zhaoying Chen, Zixuan Feng, Hsien-Lien Huang, Jared M. Johnson, Marko J. Tadjer, Jinwoo Hwang, Hongping Zhao
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 023411 (2021)
https://doi.org/10.1116/6.0000854
Published: February 2021
View articletitled, Two-step growth of β-Ga2O3 films on (100) diamond via low pressure chemical vapor deposition
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Journal Articles

Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices

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Yuxuan Zhang, Zhaoying Chen, Wenbo Li, Hyunsoo Lee, Md Rezaul Karim, Aaron R. Arehart, Steven A. Ringel, Siddharth Rajan, Hongping Zhao
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 215707 (2020)
https://doi.org/10.1063/5.0008758
Published: June 2020
View articletitled, Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices
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Journal Articles

MOCVD epitaxy of β -(AlxGa1−x)2O3 thin films on (010) Ga2O3 substrates and N-type doping

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A F M Anhar Uddin Bhuiyan, Zixuan Feng, Jared M. Johnson, Zhaoying Chen, Hsien-Lien Huang, Jinwoo Hwang, Hongping Zhao
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 120602 (2019)
https://doi.org/10.1063/1.5123495
Published: September 2019
View articletitled, MOCVD epitaxy of β -(AlxGa1−x)2O3 thin films on (010) Ga2O3 substrates and N-type doping
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Journal Articles

Single photon source based on an InGaN quantum dot in a site-controlled optical horn structure

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Xiaoxiao Sun, Ping Wang, Tao Wang, Duo Li, Zhaoying Chen, Ling Chen, Kang Gao, Mo Li, Jian Zhang, Weikun Ge, Yasuhiko Arakawa, Bo Shen, Mark Holmes, Xinqiang Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 022101 (2019)
https://doi.org/10.1063/1.5100323
Published: July 2019
View articletitled, Single photon source based on an InGaN quantum dot in a site-controlled optical horn structure
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Journal Articles

Molecular beam epitaxy of single-crystalline aluminum film for low threshold ultraviolet plasmonic nanolasers

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Shuanglong Liu, Bowen Sheng, Xinqiang Wang, Dashan Dong, Ping Wang, Zhaoying Chen, Tao Wang, Xin Rong, Duo Li, Liuyun Yang, Shangfeng Liu, Mo Li, Jian Zhang, Weikun Ge, Kebin Shi, Yuzhen Tong, Bo Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 231904 (2018)
https://doi.org/10.1063/1.5033941
Published: June 2018
View articletitled, Molecular beam epitaxy of single-crystalline aluminum film for low threshold ultraviolet plasmonic nanolasers
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Journal Articles

High-electron-mobility InN epilayers grown on silicon substrate

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Huapeng Liu, Xinqiang Wang, Zhaoying Chen, Xiantong Zheng, Ping Wang, Bowen Sheng, Tao Wang, Xin Rong, Mo Li, Jian Zhang, Xuelin Yang, Fujun Xu, Weikun Ge, Bo Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 162102 (2018)
https://doi.org/10.1063/1.5017153
Published: April 2018
View articletitled, High-electron-mobility InN epilayers grown on silicon substrate
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Journal Articles

Positive temperature coefficient of photovoltaic efficiency in solar cells based on InGaN/GaN MQWs

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Zhaoying Chen, Xiantong Zheng, Zhilong Li, Ping Wang, Xin Rong, Tao Wang, Xuelin Yang, Fujun Xu, Zhixin Qin, Weikun Ge, Bo Shen, Xinqiang Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 062104 (2016)
https://doi.org/10.1063/1.4960765
Published: August 2016
View articletitled, Positive temperature coefficient of photovoltaic efficiency in solar cells based on InGaN/GaN MQWs
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