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Journal Articles

Influence of Ag volume fraction on microstructure and optical constants of Ag-WO₃ thin films

Xishun Jiang, Qibin Lin, Yongchun Zhang, Yonghua Shi, Xinyi Li, Yangyi Zhang, Kexiu Dong, Zhaoqi Sun

J. Vac. Sci. Technol. A 35, 041516 (2017)

https://doi.org/10.1116/1.4990645

Published: July 2017

View article titled, Influence of Ag volume fraction on microstructure and optical constants of Ag-WO<sub>3</sub> thin films

Journal Articles

Evolution of interface chemistry and dielectric properties of HfO₂/Ge gate stack modulated by Gd incorporation and thermal annealing

Gang He, Jiwen Zhang, Zhaoqi Sun, Jianguo Lv, Hanshuang Chen, Mao Liu

AIP Advances 6, 025003 (2016)

https://doi.org/10.1063/1.4941698

Published: February 2016

View article titled, Evolution of interface chemistry and dielectric properties of HfO<sub>2</sub>/Ge gate stack modulated by Gd incorporation and thermal annealing

Journal Articles

Effect of dimethylaluminumhydride-derived aluminum oxynitride passivation layer on the interface chemistry and band alignment of HfTiO-InGaAs gate stacks

Gang He, Bin Deng, Hanshuang Chen, Xiaoshuang Chen, Jianguo Lv, Yongqing Ma, Zhaoqi Sun

APL Mater. 1, 012104 (2013)

https://doi.org/10.1063/1.4808243

Published: June 2013

View article titled, Effect of dimethylaluminumhydride-derived aluminum oxynitride passivation layer on the interface chemistry and band alignment of HfTiO-InGaAs gate stacks

Includes: Supplementary data