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Journal Articles

Impact of electron velocity modulation on microwave power performance for AlGaN/GaN HFETs

Mingyan Wang, Yuanjie Lv, Heng Zhou, Chao Liu, Peng Cui, Zhaojun Lin

Appl. Phys. Lett. 125, 202105 (2024)

https://doi.org/10.1063/5.0222095

Published: November 2024

View article titled, Impact of electron velocity modulation on microwave power performance for AlGaN/GaN HFETs

Journal Articles

Enhanced device performance of GaN high electron mobility transistors with in situ crystalline SiN cap layer

Xin Luo, Peng Cui, Handoko Linewih, Tieying Zhang, Xinkun Yan, Siheng Chen, Liu Wang, Jiacheng Dai, Zhaojun Lin, Xiangang Xu, Jisheng Han

Appl. Phys. Lett. 125, 122109 (2024)

https://doi.org/10.1063/5.0224144

Published: September 2024

View article titled, Enhanced device performance of GaN high electron mobility transistors with in situ crystalline SiN cap layer

Journal Articles

Bias-dependent electron velocity and short-channel effect in scaling sub-100 nm InAlN/GaN HFETs

Mingyan Wang, Heng Zhou, Chao Liu, Zhaojun Lin, Yuping Zeng, Peng Cui

Appl. Phys. Lett. 124, 152101 (2024)

https://doi.org/10.1063/5.0196746

Published: April 2024

View article titled, Bias-dependent electron velocity and short-channel effect in scaling sub-100 nm InAlN/GaN HFETs

Journal Articles

Polarized Coulomb field scattering in LaAlO₃/SrTiO₃ heterojunction field-effect transistors

Baocai Fan, Yichen Liu, Chen Fu, Zhaojun Lin, Sean Li

AIP Advances 14, 015054 (2024)

https://doi.org/10.1063/5.0188217

Published: January 2024

View article titled, Polarized Coulomb field scattering in LaAlO3/SrTiO3 heterojunction field-effect transistors

Journal Articles

Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors

Yang Liu, Chen Fu, Guangyuan Jiang, Guangyuan Zhang, Guang Yang, Yuanjie Lv, Zhaojun Lin

J. Appl. Phys. 134, 165703 (2023)

https://doi.org/10.1063/5.0172695

Published: October 2023

View article titled, Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors

Journal Articles

Study of electrical transport properties of GaN-based side-gate heterostructure transistors

Heng Zhou, Yuanjie Lv, Mingyan Wang, Peng Cui, Zhaojun Lin

Appl. Phys. Lett. 121, 212107 (2022)

https://doi.org/10.1063/5.0124626

Published: November 2022

View article titled, Study of electrical transport properties of GaN-based side-gate heterostructure transistors

Journal Articles

A split-gate AlGaN/GaN heterostructure field-effect transistor with an auxiliary gate

Yang Liu, Yuanjie Lv, Heng Zhou, Zhaojun Lin, Yongxiong Yang, Guangyuan Jiang, Yan Zhou, Mingyan Wang

AIP Advances 12, 025012 (2022)

https://doi.org/10.1063/5.0083513

Published: February 2022

View article titled, A split-gate AlGaN/GaN heterostructure field-effect transistor with an auxiliary gate

Journal Articles

Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method

Yongxiong Yang, Zhaojun Lin, Mingyan Wang, Heng Zhou, Yang Liu, Guangyuan Jiang

AIP Advances 11, 085204 (2021)

https://doi.org/10.1063/5.0056337

Published: August 2021

View article titled, Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method

Journal Articles

Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors

Guangyuan Jiang, Yuanjie Lv, Zhaojun Lin, Yongxiong Yang, Yang Liu, Shuoshuo Guo, Yan Zhou

AIP Advances 10, 075212 (2020)

https://doi.org/10.1063/5.0012615

Published: July 2020

View article titled, Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors

Journal Articles

Ambipolar SnO_x thin-film transistors achieved at high sputtering power

Yunpeng Li, Jia Yang, Yunxiu Qu, Jiawei Zhang, Li Zhou, Zaixing Yang, Zhaojun Lin, Qingpu Wang, Aimin Song, Qian Xin

Appl. Phys. Lett. 112, 182102 (2018)

https://doi.org/10.1063/1.5022875

Published: May 2018

View article titled, Ambipolar SnOx thin-film transistors achieved at high sputtering power

Journal Articles

Effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field-effect transistors

Peng Cui, Yuanjie Lv, Zhaojun Lin, Chen Fu, Yan Liu

J. Appl. Phys. 122, 124508 (2017)

https://doi.org/10.1063/1.5005518

Published: September 2017

View article titled, Effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field-effect transistors

Journal Articles

Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors

Yan Liu, Zhaojun Lin, Peng Cui, Jingtao Zhao, Chen Fu, Ming Yang, Yuanjie Lv

AIP Advances 7, 085309 (2017)

https://doi.org/10.1063/1.4999442

Published: August 2017

View article titled, Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors

Journal Articles

Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistors

Ming Yang, Yuanjie Lv, Zhihong Feng, Wei Lin, Peng Cui, Yan Liu, Chen Fu, Zhaojun Lin

J. Appl. Phys. 119, 224501 (2016)

https://doi.org/10.1063/1.4953645

Published: June 2016

View article titled, Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistors

Journal Articles

A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors

Jingtao Zhao, Zhaojun Lin, Quanyou Chen, Ming Yang, Peng Cui, Yuanjie Lv, Zhihong Feng

Appl. Phys. Lett. 107, 113502 (2015)

https://doi.org/10.1063/1.4931122

Published: September 2015

View article titled, A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors

Includes: Supplementary data

Journal Articles

Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes

Jingtao Zhao, Zhaojun Lin, Chongbiao Luan, Yang Zhou, Ming Yang, Yuanjie Lv, Zhihong Feng

Appl. Phys. Lett. 105, 083501 (2014)

https://doi.org/10.1063/1.4894093

Published: August 2014

View article titled, Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes

Journal Articles

Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors

Chongbiao Luan, Zhaojun Lin, Yuanjie Lv, Jingtao Zhao, Yutang Wang, Hong Chen, Zhanguo Wang

J. Appl. Phys. 116, 044507 (2014)

https://doi.org/10.1063/1.4891258

Published: July 2014

View article titled, Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors

Journal Articles

The influence of the AlN barrier thickness on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

Yuanjie Lv, Zhihong Feng, Zhaojun Lin, Ziwu Ji, Jingtao Zhao, Guodong Gu, Tingting Han, Jiayun Yin, Bo Liu, Shujun Cai

J. Appl. Phys. 116, 024504 (2014)

https://doi.org/10.1063/1.4889925

Published: July 2014

View article titled, The influence of the AlN barrier thickness on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

Journal Articles

Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

Yingxia Yu, Zhaojun Lin, Chongbiao Luan, Yuanjie Lv, Zhihong Feng, Ming Yang, Yutang Wang, Hong Chen

AIP Advances 3, 092115 (2013)

https://doi.org/10.1063/1.4821547

Published: September 2013

View article titled, Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

Journal Articles

Enhanced effect of strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

Yuanjie Lv, Zhihong Feng, Tingting Han, Shaobo Dun, Guodong Gu, Jiayun Yin, Baicheng Sheng, Bo Liu, Yulong Fang, Shujun Cai, Zhaojun Lin, Chongbiao Luan, Qihao Yang

Appl. Phys. Lett. 103, 113502 (2013)

https://doi.org/10.1063/1.4820960

Published: September 2013

View article titled, Enhanced effect of strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

Journal Articles

Polarization Coulomb field scattering in In_0.18Al_0.82N/AlN/GaN heterostructure field-effect transistors

Chongbiao Luan, Zhaojun Lin, Zhihong Feng, Lingguo Meng, Yuanjie Lv, Zhifang Cao, Yingxia Yu, Zhanguo Wang

J. Appl. Phys. 112, 054513 (2012)

https://doi.org/10.1063/1.4752254

Published: September 2012

View article titled, Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors

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Topics

Impact of electron velocity modulation on microwave power performance for AlGaN/GaN HFETs

Enhanced device performance of GaN high electron mobility transistors with in situ crystalline SiN cap layer

Bias-dependent electron velocity and short-channel effect in scaling sub-100 nm InAlN/GaN HFETs

Polarized Coulomb field scattering in LaAlO₃/SrTiO₃ heterojunction field-effect transistors

Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors

Study of electrical transport properties of GaN-based side-gate heterostructure transistors

A split-gate AlGaN/GaN heterostructure field-effect transistor with an auxiliary gate

Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method

Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors

Ambipolar SnO_x thin-film transistors achieved at high sputtering power

Effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field-effect transistors

Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors

Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistors

A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors

Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes

Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors

The influence of the AlN barrier thickness on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

Enhanced effect of strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

Polarization Coulomb field scattering in In_0.18Al_0.82N/AlN/GaN heterostructure field-effect transistors

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