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Journal Articles

Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in β -Ga2O3 power diodes

Jinyang Liu, Zhao Han, Lei Ren, Xiao Yang, Guangwei Xu, Weibing Hao, Xiaolong Zhao, Shu Yang, Di Lu, Yuncheng Han, Xiaohu Hou, Shibing Long
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 112106 (2023)
https://doi.org/10.1063/5.0161934
Published: September 2023
View article titled, Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in <em>β</em> -Ga<sub>2</sub>O<sub>3</sub> power diodes
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Journal Articles

Simulation studies of floating field plate in β-Ga2O3 power devices and modules

Zhao Han, Guangwei Xu, Xueqiang Xiang, Weibing Hao, Yuanbiao Li, Xuanze Zhou, Xiaobing Yan, Shibing Long
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 053102 (2023)
https://doi.org/10.1116/6.0002650
Published: July 2023
View article titled, Simulation studies of floating field plate in <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> power devices and modules
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Journal Articles

Charge transport behaviors in a multi-gated WSe2/MoS2 heterojunction

Maolong Yang, Yao Lu, Qiancui Zhang, Zhao Han, Yichi Zhang, Maliang Liu, Ningning Zhang, Huiyong Hu, Liming Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 043501 (2022)
https://doi.org/10.1063/5.0097390
Published: July 2022
View article titled, Charge transport behaviors in a multi-gated WSe<sub>2</sub>/MoS<sub>2</sub> heterojunction
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Includes: Supplementary data
Journal Articles

Gate-tunable molybdenum disulfide/germanium heterostructure with ambipolar infrared photoresponse

Maolong Yang, Jie You, Liming Wang, Zhao Han, Yichi Zhang, Bo Wang, Ningning Zhang, Dongdong Lin, Tao Liu, Zuimin Jiang, Huiyong Hu
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 021102 (2022)
https://doi.org/10.1063/5.0077827
Published: January 2022
View article titled, Gate-tunable molybdenum disulfide/germanium heterostructure with ambipolar infrared photoresponse
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Includes: Supplementary data
Journal Articles

Theoretical Study of Antiferrodistortive Phase Transition in Strontium Titanate

Yu-ping Cai, Dai-zhao Han, Ru-yun Ning
Journal: Chinese Journal of Chemical Physics
Chin. J. Chem. Phys. 23, 237–240 (2010)
https://doi.org/10.1088/1674-0068/23/02/237-240
Published: April 2010
View article titled, Theoretical Study of Antiferrodistortive Phase Transition in Strontium Titanate
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Journal Articles

Optimization of electrical characteristics of gadolinium ( Gd 2 O 3 ) incorporated Hf O 2 GaAs n -type metal-oxide semiconductor capacitors with silicon-interface-passivation layer

Sung Il Park, Injo Ok, Hyoung-Sub Kim, Feng Zhu, Manhong Zhang, Jung Hwan Yum, Zhao Han, Jack C. Lee
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 624–626 (2008)
https://doi.org/10.1116/1.2890708
Published: March 2008
View article titled, Optimization of electrical characteristics of gadolinium ( Gd 2 O 3 ) incorporated Hf O 2 GaAs n -type metal-oxide semiconductor capacitors with silicon-interface-passivation layer
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Journal Articles

Optimization of electrical characteristics of Ti O 2 -incorporated Hf O 2   n -type doped gallium arsenide metal oxide semiconductor capacitor with silicon interface passivation layer

Sung Il Park, Injo Ok, Hyoung-Sub Kim, Feng Zhu, Manhong Zhang, Jung Hwan Yum, Zhao Han, Jack C. Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 082908 (2007)
https://doi.org/10.1063/1.2775048
Published: August 2007
View article titled, Optimization of electrical characteristics of Ti O 2 -incorporated Hf O 2   n -type doped gallium arsenide metal oxide semiconductor capacitor with silicon interface passivation layer
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Journal Articles

Epitaxial growth of CoSi 2 film by Co /a- Si / Ti / Si (100) multilayer solid state reaction

Xin-Ping Qu, Guo-Ping Ru, Yong-Zhao Han, Bei-Lei Xu, Bing-Zong Li, Ning Wang, Paul K. Chu
Journal: Journal of Applied Physics
J. Appl. Phys. 89, 2641–2648 (2001)
https://doi.org/10.1063/1.1341213
Published: March 2001
View article titled, Epitaxial growth of CoSi 2 film by Co /a- Si / Ti / Si (100) multilayer solid state reaction
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