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Journal Articles

Radiation hardness of semiconductor laser diodes for space communication

Manyang Li, Chao Shen, Zhenyu Sun, Bo Xu, Chao Zhao, Zhanguo Wang

Appl. Phys. Rev. 11, 021315 (2024)

https://doi.org/10.1063/5.0188964

Published: May 2024

View article titled, Radiation hardness of semiconductor laser diodes for space communication

Journal Articles

Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers

Kun Cheng, Tianyi Tang, Wenkang Zhan, Zhenyu Sun, Bo Xu, Chao Zhao, Zhanguo Wang

AIP Advances 14, 035239 (2024)

https://doi.org/10.1063/5.0194230

Published: March 2024

View article titled, Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers

Journal Articles

Impact of contact resistance on the performances of graphene field-effect transistor through analytical study

Md. Rasidul Islam, A. S. M. Zadid Shifat, Kong Liu, Qicong Li, Cheng Yang, Zhijie Wang, Shengchun Qu, Zhanguo Wang

AIP Advances 11, 045220 (2021)

https://doi.org/10.1063/5.0039622

Published: April 2021

View article titled, Impact of contact resistance on the performances of graphene field-effect transistor through analytical study

Journal Articles

High-speed operation of single-mode tunable quantum cascade laser based on ultra-short resonant cavity

Yuhong Zhou (周予虹), Junqi Liu (刘俊岐), Shenqiang Zhai (翟慎强), Ning Zhuo (卓宁), Jinchuan Zhang (张锦川), Shuman Liu (刘舒曼), Lijun Wang (王利军), Fengqi Liu (刘峰奇), Zhanguo Wang (王占国)

AIP Advances 11, 015325 (2021)

https://doi.org/10.1063/5.0036219

Published: January 2021

View article titled, High-speed operation of single-mode tunable quantum cascade laser based on ultra-short resonant cavity

Journal Articles

Improved performance of InP-based 2.1 μm InGaAsSb quantum well lasers using Sb as a surfactant

Dongbo Wang, Ning Zhuo, Yue Zhao, Fengmin Cheng, Shouzhu Niu, Jinchuan Zhang, Shenqiang Zhai, Lijun Wang, Shuman Liu, Fengqi Liu, Zhanguo Wang

Appl. Phys. Lett. 113, 251101 (2018)

https://doi.org/10.1063/1.5060653

Published: December 2018

View article titled, Improved performance of InP-based 2.1 μm InGaAsSb quantum well lasers using Sb as a surfactant

Journal Articles

Room temperature operation of InAsSb quantum dashes laser near 1.8 μ m based on InP (001) substrate

Dongbo Wang, Ning Zhuo, Zenghui Gu, Yue Zhao, Fengmin Cheng, Jinchuan Zhang, Shenqiang Zhai, Junqi Liu, Shuman Liu, Fengqi Liu, Zhanguo Wang

AIP Advances 8, 125114 (2018)

https://doi.org/10.1063/1.5064698

Published: December 2018

View article titled, Room temperature operation of InAsSb quantum dashes laser near 1.8 μ m based on InP (001) substrate

Journal Articles

High performance continuous-wave InP-based 2.1 μm superluminescent diode with InGaAsSb quantum well and cavity structure suppression

Dongbo Wang, Jinchuan Zhang, Chuncai Hou, Yue Zhao, Fengmin Cheng, Xuefeng Jia, Shenqiang Zhai, Ning Zhuo, Junqi Liu, Fengqi Liu, Zhanguo Wang

Appl. Phys. Lett. 113, 161107 (2018)

https://doi.org/10.1063/1.5052056

Published: October 2018

View article titled, High performance continuous-wave InP-based 2.1 μm superluminescent diode with InGaAsSb quantum well and cavity structure suppression

Journal Articles

Theoretical analysis of induction heating in high-temperature epitaxial growth system

Shuzhe Mei, Quan Wang, Meilan Hao, Jiankai Xu, Haibo Yin, Hongling Xiao, Chun Feng, Lijuan Jiang, Xiaoliang Wang, Fengqi Liu, Xiangang Xu, Zhanguo Wang

AIP Advances 8, 085114 (2018)

https://doi.org/10.1063/1.5030949

Published: August 2018

View article titled, Theoretical analysis of induction heating in high-temperature epitaxial growth system

Journal Articles

Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure

Guijuan Zhao, Lianshan Wang, Huijie Li, Yulin Meng, Fangzheng Li, Shaoyan Yang, Zhanguo Wang

Appl. Phys. Lett. 112, 052105 (2018)

https://doi.org/10.1063/1.4997319

Published: February 2018

View article titled, Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure

Includes: Supplementary data

Journal Articles

Response to “Comment on ‘Phase-locked array of quantum cascade lasers with an intracavity spatial filter’” [Appl. Phys. Lett. 111 , 256101 (2017)]

Zhiwei Jia, Lei Wang, Jinchuan Zhang, Yue Zhao, Chuanwei Liu, Shenqiang Zhai, Ning Zhuo, Junqi Liu, Lijun Wang, Shuman Liu, Fengqi Liu, Zhanguo Wang

Appl. Phys. Lett. 111, 256102 (2017)

https://doi.org/10.1063/1.5006706

Published: December 2017

View article titled, Response to “Comment on ‘Phase-locked array of quantum cascade lasers with an intracavity spatial filter’” [Appl. Phys. Lett. 111 , 256101 (2017)]

Journal Articles

Phase-locked array of quantum cascade lasers with an intracavity spatial filter

Zhiwei Jia, Lei Wang, Jinchuan Zhang, Yue Zhao, Chuanwei Liu, Shenqiang Zhai, Ning Zhuo, JunQi Liu, LiJun Wang, ShuMan Liu, Fengqi Liu, Zhanguo Wang

Appl. Phys. Lett. 111, 061108 (2017)

https://doi.org/10.1063/1.4990463

Published: August 2017

View article titled, Phase-locked array of quantum cascade lasers with an intracavity spatial filter

Journal Articles

High-speed, room-temperature quantum cascade detectors at 4.3 μm

Yuhong Zhou, Shenqiang Zhai, Fengjiao Wang, Junqi Liu, Fengqi Liu, Shuman Liu, Jinchuan Zhang, Ning Zhuo, Lijun Wang, ZhanGuo Wang

AIP Advances 6, 035305 (2016)

https://doi.org/10.1063/1.4943675

Published: March 2016

View article titled, High-speed, room-temperature quantum cascade detectors at 4.3 μm

Journal Articles

Possible atomic structures responsible for the sub-bandgap absorption of chalcogen-hyperdoped silicon

Ke-Fan Wang, Hezhu Shao, Kong Liu, Shengchun Qu, Yuanxu Wang, Zhanguo Wang

Appl. Phys. Lett. 107, 112106 (2015)

https://doi.org/10.1063/1.4931091

Published: September 2015

View article titled, Possible atomic structures responsible for the sub-bandgap absorption of chalcogen-hyperdoped silicon

Journal Articles

Two-dimensional electron and hole gases in In_xGa₁₋_xN/Al_yGa₁₋_yN/GaN heterostructure for enhancement mode operation

Junda Yan, Xiaoliang Wang, Quan Wang, Shenqi Qu, Hongling Xiao, Enchao Peng, He Kang, Cuimei Wang, Chun Feng, Haibo Yin, Lijuan Jiang, Baiquan Li, Zhanguo Wang, Xun Hou

J. Appl. Phys. 116, 054502 (2014)

https://doi.org/10.1063/1.4891732

Published: August 2014

View article titled, Two-dimensional electron and hole gases in InxGa1−xN/AlyGa1−yN/GaN heterostructure for enhancement mode operation

Journal Articles

Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors

Chongbiao Luan, Zhaojun Lin, Yuanjie Lv, Jingtao Zhao, Yutang Wang, Hong Chen, Zhanguo Wang

J. Appl. Phys. 116, 044507 (2014)

https://doi.org/10.1063/1.4891258

Published: July 2014

View article titled, Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors

Journal Articles

High-performance hybrid organic-inorganic solar cell based on planar n-type silicon

Dan Chi, Boyuan Qi, Jizheng Wang, Shengchun Qu, Zhanguo Wang

Appl. Phys. Lett. 104, 193903 (2014)

https://doi.org/10.1063/1.4875913

Published: May 2014

View article titled, High-performance hybrid organic-inorganic solar cell based on planar n-type silicon

Journal Articles

Tunable density of two-dimensional electron gas in GaN-based heterostructures: The effects of buffer acceptor and channel width

Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Shenqi Qu, He Kang, Xun Hou, Zhanguo Wang

J. Appl. Phys. 114, 154507 (2013)

https://doi.org/10.1063/1.4825318

Published: October 2013

View article titled, Tunable density of two-dimensional electron gas in GaN-based heterostructures: The effects of buffer acceptor and channel width

Journal Articles

Observation of photo darkening in self assembled InGaAs/GaAs quantum dots

Hongyi Zhang, Yonghai Chen, Xiaolong Zhou, Yanan Jia, Xiaoling Ye, Bo Xu, Zhanguo Wang

J. Appl. Phys. 113, 173508 (2013)

https://doi.org/10.1063/1.4803683

Published: May 2013

View article titled, Observation of photo darkening in self assembled InGaAs/GaAs quantum dots

Journal Articles

X-ray probe of GaN thin films grown on InGaN compliant substrates

Xiaoqing Xu, Yang Li, Jianming Liu, Hongyuan Wei, Xianglin Liu, Shaoyan Yang, Zhanguo Wang, Huanhua Wang

Appl. Phys. Lett. 102, 132104 (2013)

https://doi.org/10.1063/1.4799279

Published: April 2013

View article titled, X-ray probe of GaN thin films grown on InGaN compliant substrates

Journal Articles

Scattering due to large cluster embedded in quantum wells

Changbo Liu, Guijuan Zhao, Guipeng Liu, Yafeng Song, Heng Zhang, Dongdong Jin, Zhiwei Li, Xianglin Liu, Shaoyan Yang, Qinsheng Zhu, Zhanguo Wang

Appl. Phys. Lett. 102, 052105 (2013)

https://doi.org/10.1063/1.4782218

Published: February 2013

View article titled, Scattering due to large cluster embedded in quantum wells

NARROW

Topics

Radiation hardness of semiconductor laser diodes for space communication

Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers

Impact of contact resistance on the performances of graphene field-effect transistor through analytical study

High-speed operation of single-mode tunable quantum cascade laser based on ultra-short resonant cavity

Improved performance of InP-based 2.1 μm InGaAsSb quantum well lasers using Sb as a surfactant

Room temperature operation of InAsSb quantum dashes laser near 1.8 μ m based on InP (001) substrate

High performance continuous-wave InP-based 2.1 μm superluminescent diode with InGaAsSb quantum well and cavity structure suppression

Theoretical analysis of induction heating in high-temperature epitaxial growth system

Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure

Response to “Comment on ‘Phase-locked array of quantum cascade lasers with an intracavity spatial filter’” [Appl. Phys. Lett. 111 , 256101 (2017)]

Phase-locked array of quantum cascade lasers with an intracavity spatial filter

High-speed, room-temperature quantum cascade detectors at 4.3 μm

Possible atomic structures responsible for the sub-bandgap absorption of chalcogen-hyperdoped silicon

Two-dimensional electron and hole gases in In_xGa₁₋_xN/Al_yGa₁₋_yN/GaN heterostructure for enhancement mode operation

Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors

High-performance hybrid organic-inorganic solar cell based on planar n-type silicon

Tunable density of two-dimensional electron gas in GaN-based heterostructures: The effects of buffer acceptor and channel width

Observation of photo darkening in self assembled InGaAs/GaAs quantum dots

X-ray probe of GaN thin films grown on InGaN compliant substrates

Scattering due to large cluster embedded in quantum wells

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