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Journal Articles

Approach for removing ghost-images in remote field eddy current testing of ferromagnetic pipes

Q. W. Luo, Y. B. Shi, Z. G. Wang, W. Zhang, Y. Zhang

Rev. Sci. Instrum. 87, 104707 (2016)

https://doi.org/10.1063/1.4964374

Published: October 2016

View article titled, Approach for removing ghost-images in remote field eddy current testing of ferromagnetic pipes

Journal Articles

Spin polarization of ⁸⁷Rb atoms with ultranarrow linewidth diode laser: Numerical simulation

Z. G. Wang (汪之国), Q. Y. Jiang (江奇渊), X. Zhan (展翔), Y. D. Chen (陈运达), H. Luo (罗晖)

AIP Advances 6, 085110 (2016)

https://doi.org/10.1063/1.4961375

Published: August 2016

View article titled, Spin polarization of 87Rb atoms with ultranarrow linewidth diode laser: Numerical simulation

Journal Articles

Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector

B. S. Tao, P. Barate, J. Frougier, P. Renucci, B. Xu, A. Djeffal, H. Jaffrès, J.-M. George, X. Marie, S. Petit-Watelot, S. Mangin, X. F. Han, Z. G. Wang, Y. Lu

Appl. Phys. Lett. 108, 152404 (2016)

https://doi.org/10.1063/1.4945768

Published: April 2016

View article titled, Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector

Journal Articles

High-pressure behavior of amorphous selenium from ultrasonic measurements and Raman spectroscopy

Z. He, Z. G. Wang, H. Y. Zhu, X. R. Liu, J. P. Peng, S. M. Hong

Appl. Phys. Lett. 105, 011901 (2014)

https://doi.org/10.1063/1.4887005

Published: July 2014

View article titled, High-pressure behavior of amorphous selenium from ultrasonic measurements and Raman spectroscopy

Journal Articles

Multi-wavelength surface emitting quantum cascade laser based on equivalent phase shift

J. C. Zhang, F. Q. Liu, D. Y. Yao, L. J. Wang, F. L. Yan, J. Q. Liu, Z. G. Wang

J. Appl. Phys. 115, 033106 (2014)

https://doi.org/10.1063/1.4862649

Published: January 2014

View article titled, Multi-wavelength surface emitting quantum cascade laser based on equivalent phase shift

Journal Articles

Monte Carlo simulation of gamma-ray response of BaF₂ and CaF₂

F. Gao, Y. L. Xie, Z. G. Wang, S. Kerisit, D. X. Wu, L. W. Campbell, R. M. Van Ginhoven, M. Prange

J. Appl. Phys. 114, 173512 (2013)

https://doi.org/10.1063/1.4828718

Published: November 2013

View article titled, Monte Carlo simulation of gamma-ray response of BaF2 and CaF2

Journal Articles

High power buried sampled grating distributed feedback quantum cascade lasers

J. C. Zhang, F. Q. Liu, D. Y. Yao, N. Zhuo, L. J. Wang, J. Q. Liu, Z. G. Wang

J. Appl. Phys. 113, 153101 (2013)

https://doi.org/10.1063/1.4801906

Published: April 2013

View article titled, High power buried sampled grating distributed feedback quantum cascade lasers

Journal Articles

Index-coupled surface porous grating distributed feedback quantum cascade laser

J. C. Zhang, F. Q. Liu, L. H. Zhao, L. J. Wang, D. Y. Yao, S. Q. Zhai, J. Q. Liu, Z. G. Wang

J. Appl. Phys. 112, 103102 (2012)

https://doi.org/10.1063/1.4765738

Published: November 2012

View article titled, Index-coupled surface porous grating distributed feedback quantum cascade laser

Journal Articles

High-performance uncooled distributed-feedback quantum cascade laser without lateral regrowth

J. C. Zhang, F. Q. Liu, S. Tan, D. Y. Yao, L. J. Wang, L. Li, J. Q. Liu, Z. G. Wang

Appl. Phys. Lett. 100, 112105 (2012)

https://doi.org/10.1063/1.3693425

Published: March 2012

View article titled, High-performance uncooled distributed-feedback quantum cascade laser without lateral regrowth

Journal Articles

Thermal diffusion of nitrogen into ZnO film deposited on InN/sapphire substrate by metal organic chemical vapor deposition

K. Shi, P. F. Zhang, H. Y. Wei, C. M. Jiao, P. Jin, X. L. Liu, S. Y. Yang, Q. S. Zhu, Z. G. Wang

J. Appl. Phys. 110, 113509 (2011)

https://doi.org/10.1063/1.3665203

Published: December 2011

View article titled, Thermal diffusion of nitrogen into ZnO film deposited on InN/sapphire substrate by metal organic chemical vapor deposition

Journal Articles

Thermal carrier processes in bimodal-sized quantum dots with different lateral coupling strength

X. L. Zhou, Y. H. Chen, T. F. Li, X. L. Ye, Bo Xu, Z. G. Wang

Appl. Phys. Lett. 99, 031903 (2011)

https://doi.org/10.1063/1.3614433

Published: July 2011

View article titled, Thermal carrier processes in bimodal-sized quantum dots with different lateral coupling strength

Journal Articles

Abnormal temperature dependent photoluminescence of excited states of InAs/GaAs quantum dots: Carrier exchange between excited states and ground states

X. L. Zhou (周晓龙), Y. H. Chen (陈涌海), X. L. Ye (叶小玲), Bo Xu (徐波), Z. G. Wang (王占国)

J. Appl. Phys. 109, 113540 (2011)

https://doi.org/10.1063/1.3595690

Published: June 2011

View article titled, Abnormal temperature dependent photoluminescence of excited states of InAs/GaAs quantum dots: Carrier exchange between excited states and ground states

Journal Articles

L1_{FePt nanoparticles with distinct perpendicular magnetic anisotropy prepared on Au buffer layers by a micellar method}

Y. Gao, X. W. Zhang, Z. G. Yin, F. T. Si, Y. M. Bai, X. L. Zhang, S. Qu, Z. G. Wang

J. Appl. Phys. 109, 113907 (2011)

https://doi.org/10.1063/1.3592972

Published: June 2011

View article titled, L1 FePt nanoparticles with distinct perpendicular magnetic anisotropy prepared on Au buffer layers by a micellar method

Journal Articles

Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, P. P. Chow

J. Appl. Phys. 109, 093708 (2011)

https://doi.org/10.1063/1.3590399

Published: May 2011

View article titled, Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer

Journal Articles

Effects of ultra-low Al alloying In(Al)As layer on the formation and evolution of InAs/GaAs quantum dots

X. L. Zhou, Y. H. Chen, T. F. Li, G. Y. Zhou, H. Y. Zhang, X. L. Ye, Bo Xu, Z. G. Wang

J. Appl. Phys. 109, 094311 (2011)

https://doi.org/10.1063/1.3580258

Published: May 2011

View article titled, Effects of ultra-low Al alloying In(Al)As layer on the formation and evolution of InAs/GaAs quantum dots

Journal Articles

Experimental and theoretical study for InAs quantum dashes-in-a-step-well structure on (001)-oriented InP substrate

J. X. Kong, Q. S. Zhu, B. Xu, Z. G. Wang

J. Appl. Phys. 109, 084345 (2011)

https://doi.org/10.1063/1.3583593

Published: April 2011

View article titled, Experimental and theoretical study for InAs quantum dashes-in-a-step-well structure on (001)-oriented InP substrate

Journal Articles

Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment

X. L. Zhou, Y. H. Chen, H. Y. Zhang, G. Y. Zhou, T. F. Li, J. Q. Liu, X. L. Ye, Bo Xu, Z. G. Wang

J. Appl. Phys. 109, 083501 (2011)

https://doi.org/10.1063/1.3572238

Published: April 2011

View article titled, Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment

Journal Articles

First-principles study of the noble metal-doped BN layer

Y. G. Zhou, P. Yang, X. Sun, Z. G. Wang, X. T. Zu, F. Gao

J. Appl. Phys. 109, 084308 (2011)

https://doi.org/10.1063/1.3569725

Published: April 2011

View article titled, First-principles study of the noble metal-doped BN layer

Journal Articles

Functionalized graphene nanoroads for quantum well device

Y. G. Zhou, P. Yang, Z. G. Wang, H. Y. Xiao, X. T. Zu, X. Sun, M. A. Khaleel, F. Gao

Appl. Phys. Lett. 98, 093108 (2011)

https://doi.org/10.1063/1.3560981

Published: March 2011

View article titled, Functionalized graphene nanoroads for quantum well device

Journal Articles

The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing

G. Y. Zhou (周冠宇), Y. H. Chen (陈涌海), J. L. Yu (俞金玲), X. L. Zhou (周晓龙), X. L. Ye (叶小玲), P. Jin (金鹏), Z. G. Wang (王占国)

Appl. Phys. Lett. 98, 071914 (2011)

https://doi.org/10.1063/1.3552967

Published: February 2011

View article titled, The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing

NARROW

Topics

Approach for removing ghost-images in remote field eddy current testing of ferromagnetic pipes

Spin polarization of ⁸⁷Rb atoms with ultranarrow linewidth diode laser: Numerical simulation

Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector

High-pressure behavior of amorphous selenium from ultrasonic measurements and Raman spectroscopy

Multi-wavelength surface emitting quantum cascade laser based on equivalent phase shift

Monte Carlo simulation of gamma-ray response of BaF₂ and CaF₂

High power buried sampled grating distributed feedback quantum cascade lasers

Index-coupled surface porous grating distributed feedback quantum cascade laser

High-performance uncooled distributed-feedback quantum cascade laser without lateral regrowth

Thermal diffusion of nitrogen into ZnO film deposited on InN/sapphire substrate by metal organic chemical vapor deposition

Thermal carrier processes in bimodal-sized quantum dots with different lateral coupling strength

Abnormal temperature dependent photoluminescence of excited states of InAs/GaAs quantum dots: Carrier exchange between excited states and ground states

L1_{FePt nanoparticles with distinct perpendicular magnetic anisotropy prepared on Au buffer layers by a micellar method}

Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer

Effects of ultra-low Al alloying In(Al)As layer on the formation and evolution of InAs/GaAs quantum dots

Experimental and theoretical study for InAs quantum dashes-in-a-step-well structure on (001)-oriented InP substrate

Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment

First-principles study of the noble metal-doped BN layer

Functionalized graphene nanoroads for quantum well device

The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing

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