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Journal Articles

Simulation analyses of carrier dynamics in npn-type GaN-heterojunction bipolar transistors with different hole-concentration p-base layers

Akira Mase, Yusuke Iida, Masaya Takimoto, Yutaka Nikai, Takashi Egawa, Makoto Miyoshi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 052206 (2023)
https://doi.org/10.1116/6.0002577
Published: September 2023
View article titled, Simulation analyses of carrier dynamics in <em>npn</em>-type GaN-heterojunction bipolar transistors with different hole-concentration <em>p</em>-base layers
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