1-20 of 26
Yuriy I. Mazur
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors

Satish Shetty, Andrian V. Kuchuk, Mohammad Zamani-Alavijeh, Fernando Maia de Oliveira, Ayesha Hassan, Savannah R. Eisner, Nirosh M. Eldose, Dinesh Baral, Yuriy I Mazur, David Huitink, Debbie G. Senesky, H Alan Mantooth, Gregory J. Salamo
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 042105 (2024)
https://doi.org/10.1063/5.0213310
Published: July 2024
View article titled, Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
Open the PDF for Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors in another window
Journal Articles

Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications

Editor’s Pick
Hryhorii Stanchu, Grey Abernathy, Joshua Grant, Fernando M. de Oliveira, Yuriy I. Mazur, Jifeng Liu, Wei Du, Baohua Li, Gregory J. Salamo, Shui-Qing Yu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 042802 (2024)
https://doi.org/10.1116/6.0003734
Published: July 2024
View article titled, Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications
Open the PDF for Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications in another window
Journal Articles

Epitaxial growth and characterization of GaAs (111) on 4H-SiC

Subhashis Das, Nirosh M. Eldose, Hryhorii Stanchu, Fernando Maia de Oliveira, Mourad Benamara, Yuriy I. Mazur, Zhong Chen, Alan Mantooth, Gregory J. Salamo
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 042702 (2024)
https://doi.org/10.1116/6.0003454
Published: May 2024
View article titled, Epitaxial growth and characterization of GaAs (111) on 4H-SiC
Open the PDF for Epitaxial growth and characterization of GaAs (111) on 4H-SiC in another window
Journal Articles

Effects of ion implantation with arsenic and boron in germanium-tin layers

Editor’s Pick
Sylvester Amoah, Hryhorii Stanchu, Grey Abernathy, Serhii Kryvyi, Fernando M. De Oliveira, Yuriy I. Mazur, Shangda Li, Shang Liu, Jifeng Liu, Wei Du, Baohua Li, Gregory Salamo, Shui-Qing Yu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 034002 (2024)
https://doi.org/10.1116/6.0003565
Published: April 2024
View article titled, Effects of ion implantation with arsenic and boron in germanium-tin layers
Open the PDF for Effects of ion implantation with arsenic and boron in germanium-tin layers in another window
Includes: Supplementary data
Journal Articles

Thermal stability study of gallium nitride based magnetic field sensor

Satish Shetty, Andrian Kuchuk, Mohammad Zamani-Alavijeh, Ayesha Hassan, Savannah R. Eisner, Fernando Maia de Oliveira, Alexis Krone, John Harris, Josh P. Thompson, Nirosh M. Eldose, Yuriy I. Mazur, David Huitink, Debbie G. Senesky, H. Alan Mantooth, Gregory J. Salamo
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 145303 (2023)
https://doi.org/10.1063/5.0156013
Published: October 2023
View article titled, Thermal stability study of gallium nitride based magnetic field sensor
Open the PDF for Thermal stability study of gallium nitride based magnetic field sensor in another window
Journal Articles

Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers

Hryhorii Stanchu, Abdulla Said, Oluwatobi Olorunsola, Sudip Acharya, Sylvester Amoah, Mohammad Zamani-Alavijeh, Fernando M. de Oliveira, Santosh Karki Chhetri, Jin Hu, Yuriy I. Mazur, Shui-Qing Yu, Gregory Salamo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 052208 (2023)
https://doi.org/10.1116/6.0002957
Published: September 2023
View article titled, Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
Open the PDF for Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers in another window
Journal Articles

Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film

Fernando M. de Oliveira, Chen Li, Pijush K. Ghosh, Andrian V. Kuchuk, Morgan E. Ware, Yuriy I. Mazur, Gregory J. Salamo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 052805 (2023)
https://doi.org/10.1116/6.0002866
Published: August 2023
View article titled, Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film
Open the PDF for Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film in another window
Includes: Supplementary data
Journal Articles

Strain-driven anomalous elastic properties of GeSn thin films

Petro Lytvyn, Andrian Kuchuk, Serhiy Kondratenko, Hryhorii Stanchu, Sergii V. Malyuta, Shui-Qing Yu, Yuriy I. Mazur, Gregory J. Salamo
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 022102 (2023)
https://doi.org/10.1063/5.0149098
Published: July 2023
View article titled, Strain-driven anomalous elastic properties of GeSn thin films
Open the PDF for Strain-driven anomalous elastic properties of GeSn thin films in another window
Includes: Supplementary data
Journal Articles

Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure

Hang Li, Ying Wang, Yingnan Guo, Shufang Wang, Guangsheng Fu, Yuriy I. Mazur, Morgan E. Ware, Gregory J. Salamo, Baolai Liang
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 173105 (2023)
https://doi.org/10.1063/5.0152094
Published: April 2023
View article titled, Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure
Open the PDF for Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure in another window
Journal Articles

Study of simulations of double graded InGaN solar cell structures

Mirsaeid Sarollahi, Mohammad Zamani-Alavijeh, Rohith Allaparthi, Manal A. Aldawsari, Malak Refaei, Reem Alhelais, Md Helal Uddin Maruf, Yuriy I. Mazur, Morgan E. Ware
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 042203 (2022)
https://doi.org/10.1116/6.0001841
Published: June 2022
View article titled, Study of simulations of double graded InGaN solar cell structures
Open the PDF for Study of simulations of double graded InGaN solar cell structures in another window
Journal Articles

Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate

Hryhorii V. Stanchu, Andrian V. Kuchuk, Yuriy I. Mazur, Joe Margetis, John Tolle, Shui-Qing Yu, Gregory J. Salamo
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 232101 (2020)
https://doi.org/10.1063/5.0011842
Published: June 2020
View article titled, Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate
Open the PDF for Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate in another window
Includes: Supplementary data
Journal Articles

Evolution of InAs quantum dots and wetting layer on GaAs (001): Peculiar photoluminescence near onset of quantum dot formation

Rahul Kumar, Yurii Maidaniuk, Samir K. Saha, Yuriy I. Mazur, Gregory J. Salamo
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 065306 (2020)
https://doi.org/10.1063/1.5139400
Published: February 2020
View article titled, Evolution of InAs quantum dots and wetting layer on GaAs (001): Peculiar photoluminescence near onset of quantum dot formation
Open the PDF for Evolution of InAs quantum dots and wetting layer on GaAs (001): Peculiar photoluminescence near onset of quantum dot formation in another window
Journal Articles

Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix

Rahul Kumar, Yurii Maidaniuk, Andrian Kuchuk, Samir K. Saha, Pijush K. Ghosh, Yuriy I. Mazur, Morgan E. Ware, Gregory J. Salamo
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 235303 (2018)
https://doi.org/10.1063/1.5053412
Published: December 2018
View article titled, Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix
Open the PDF for Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix in another window
Journal Articles

Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN(0001) quantum well structures

Chen Li, Yurii Maidaniuk, Andrian V. Kuchuk, Satish Shetty, Pijush Ghosh, Thomas P. White, Timothy Al. Morgan, Xian Hu, Yang Wu, Morgan E. Ware, Yuriy I. Mazur, Gregory J. Salamo
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 195302 (2018)
https://doi.org/10.1063/1.5025671
Published: May 2018
View article titled, Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN(0001) quantum well structures
Open the PDF for Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN(0001) quantum well structures in another window
Journal Articles

Carrier dynamics of InAs quantum dots with GaAs1−xSbx barrier layers

Editor’s Pick
Yingnan Guo, Yao Liu, Baolai Liang, Ying Wang, Qinglin Guo, Shufang Wang, Guangsheng Fu, Yuriy I. Mazur, Morgan E. Ware, Gregory J. Salamo
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 191105 (2017)
https://doi.org/10.1063/1.5003097
Published: November 2017
View article titled, Carrier dynamics of InAs quantum dots with GaAs<sub>1−x</sub>Sb<sub>x</sub> barrier layers
Open the PDF for Carrier dynamics of InAs quantum dots with GaAs<sub>1−x</sub>Sb<sub>x</sub> barrier layers in another window
Journal Articles

Effect of well/barrier thickness ratio on strain relaxation in GaN/AlN superlattices grown on GaN/sapphire template

Serhii B. Kryvyi, Petro M. Lytvyn, Vasyl P. Kladko, Hryhorii V. Stanchu, Andrian V. Kuchuk, Yuriy. I. Mazur, Gregory J. Salamo, Shibin Li, Pavlo P. Kogutyuk, Alexander E. Belyaev
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 062902 (2017)
https://doi.org/10.1116/1.4999468
Published: October 2017
View article titled, Effect of well/barrier thickness ratio on strain relaxation in GaN/AlN superlattices grown on GaN/sapphire template
Open the PDF for Effect of well/barrier thickness ratio on strain relaxation in GaN/AlN superlattices grown on GaN/sapphire template in another window
Journal Articles

Optical and structural study of deformation states in the GaN/AlN superlattices

Oleksandr Kolomys, Bogdan Tsykaniuk, Viktor Strelchuk, Andrey Naumov, Vasyl Kladko, Yuriy I. Mazur, Morgan E. Ware, Shibin Li, Andrian Kuchuk, Yurii Maidaniuk, Mourad Benamara, Alexander Belyaev, Gregory J. Salamo
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 155302 (2017)
https://doi.org/10.1063/1.4999175
Published: October 2017
View article titled, Optical and structural study of deformation states in the GaN/AlN superlattices
Open the PDF for Optical and structural study of deformation states in the GaN/AlN superlattices in another window
Journal Articles

The continuum state in photoluminescence of type-II In0.46Al0.54As/Al0.54Ga0.46As quantum dots

Linlin Su, Baolai Liang, Ying Wang, Qinglin Guo, Xiaowei Li, Shufang Wang, Guangsheng Fu, Yuriy I. Mazur, Morgan E. Ware, Gregory J. Salamo
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 183103 (2016)
https://doi.org/10.1063/1.4966895
Published: October 2016
View article titled, The continuum state in photoluminescence of type-II In<sub>0.46</sub>Al<sub>0.54</sub>As/Al<sub>0.54</sub>Ga<sub>0.46</sub>As quantum dots
Open the PDF for The continuum state in photoluminescence of type-II In<sub>0.46</sub>Al<sub>0.54</sub>As/Al<sub>0.54</sub>Ga<sub>0.46</sub>As quantum dots in another window
Journal Articles

Coexistence of type-I and type-II band alignments in In0.46Al0.54As/Ga0.46Al0.54As self-assembled quantum dots

Linlin Su, Baolai Liang, Ying Wang, Qinglin Guo, Shufang Wang, Guangsheng Fu, Zhiming M. Wang, Yuriy I. Mazur, Morgan E. Ware, Gregory J. Salamo
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 183107 (2015)
https://doi.org/10.1063/1.4935161
Published: November 2015
View article titled, Coexistence of type-I and type-II band alignments in In<sub>0.46</sub>Al<sub>0.54</sub>As/Ga<sub>0.46</sub>Al<sub>0.54</sub>As self-assembled quantum dots
Open the PDF for Coexistence of type-I and type-II band alignments in In<sub>0.46</sub>Al<sub>0.54</sub>As/Ga<sub>0.46</sub>Al<sub>0.54</sub>As self-assembled quantum dots in another window
Journal Articles

Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap

Christopher D. Yerino, Paul J. Simmonds, Baolai Liang, Vitaliy G. Dorogan, Morgan E. Ware, Yuriy I. Mazur, Daehwan Jung, Diana L. Huffaker, Gregory J. Salamo, Minjoo Larry Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 071912 (2014)
https://doi.org/10.1063/1.4893747
Published: August 2014
View article titled, Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap
Open the PDF for Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap in another window
Includes: Supplementary data