Page 1 | Search Results | AIP Publishing

1-20 of 159

Sort by

Sort Order Select

Journal Articles

The electrical characteristic and trapping effect of AlGaN/GaN HEMTs with Fe and Fe/C co-doped GaN buffer layer

Xuan Su, Ling Yang, Meng Zhang, Qing Zhu, Wenze Gao, Wei Zhao, Qian Yu, Qingyuan Chang, Hao Lu, Chunzhou Shi, Bin Hou, Mei Wu, Sheng Wu, Gang Qiu, Xiaohua Ma, Yue Hao

Appl. Phys. Lett. 125, 102105 (2024)

https://doi.org/10.1063/5.0219265

Published: September 2024

View article titled, The electrical characteristic and trapping effect of AlGaN/GaN HEMTs with Fe and Fe/C co-doped GaN buffer layer

Journal Articles

Spin valve effect in the van der Waals heterojunction of Fe₃GeTe₂/tellurene/Fe₃GeTe₂

Xiangyu Zeng, Liang Zhang, Yang Zhang, Fazhi Yang, Liqin Zhou, Yong Wang, Cizhe Fang, Xiaoxi Li, Siying Zheng, Yang Liu, Yan Liu, Xiaozhi Wang, Yue Hao, Genquan Han

Appl. Phys. Lett. 125, 092406 (2024)

https://doi.org/10.1063/5.0215304

Published: August 2024

View article titled, Spin valve effect in the van der Waals heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Journal Articles

Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices

Joachim Würfl, Tomás Palacios, Huili Grace Xing, Yue Hao, Mathias Schubert

Appl. Phys. Lett. 125, 070401 (2024)

https://doi.org/10.1063/5.0221783

Published: August 2024

View article titled, Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices

Journal Articles

Quasi-2D high mobility channel E-mode β -Ga₂O₃ MOSFET with Johnson FOM of 7.56 THz·V

Xi-Chen Wang, Xiao-Li Lu, Yun-Long He, Fang Zhang, Yu Shao, Peng Liu, Zhi-Nan Zhang, Xue-Feng Zheng, Wei-Wei Chen, Lei Wang, Jun Yang, Xiao-Hua Ma, Yue Hao

Appl. Phys. Lett. 125, 063505 (2024)

https://doi.org/10.1063/5.0223330

Published: August 2024

View article titled, Quasi-2D high mobility channel E-mode β -Ga2O3 MOSFET with Johnson FOM of 7.56 THz·V

Journal Articles

Plasma refractive index sensor based on MIM waveguide coupled with analogy T-shaped and double-ring resonators

Qin Lu, Tianxiang Guo, Meiqi Wang, Junsen Huang, Jiao Fu, Haifeng Chen, Shaoqing Wang, Xiangtai Liu, Yifan Jia, Lijun Li, Jincheng Zhang, Yue Hao

J. Appl. Phys. 136, 043307 (2024)

https://doi.org/10.1063/5.0213385

Published: July 2024

View article titled, Plasma refractive index sensor based on MIM waveguide coupled with analogy T-shaped and double-ring resonators

Journal Articles

Semiconductor lasers for photonic neuromorphic computing and photonic spiking neural networks: A perspective

Shuiying Xiang, Yanan Han, Shuang Gao, Ziwei Song, Yahui Zhang, Dianzhuang Zheng, Chengyang Yu, Xingxing Guo, XinTao Zeng, Zhiquan Huang, Yue Hao

APL Photonics 9, 070903 (2024)

https://doi.org/10.1063/5.0217968

Published: July 2024

View article titled, Semiconductor lasers for photonic neuromorphic computing and photonic spiking neural networks: A perspective

Journal Articles

Threshold voltage instability in III-nitride heterostructure metal–insulator–semiconductor high-electron-mobility transistors: Characterization and interface engineering

Sen Huang, Xinhua Wang, Yixu Yao, Kexin Deng, Yang Yang, Qimeng Jiang, Xinyu Liu, Fuqiang Guo, Bo Shen, Kevin J. Chen, Yue Hao

Appl. Phys. Rev. 11, 021325 (2024)

https://doi.org/10.1063/5.0179376

Published: May 2024

View article titled, Threshold voltage instability in III-nitride heterostructure metal–insulator–semiconductor high-electron-mobility transistors: Characterization and interface engineering

Journal Articles

On-state electrical stress-induced degradation of NiO/β-Ga₂O₃ heterojunction pn diodes

Yingzhe Wang, Xuefeng Zheng, Jiaduo Zhu, Ailing Pan, Sijie Bu, Yuehua Hong, Jincheng Zhang, Lixin Guo, Xiaohua Ma, Yue Hao

Appl. Phys. Lett. 124, 193503 (2024)

https://doi.org/10.1063/5.0204051

Published: May 2024

View article titled, On-state electrical stress-induced degradation of NiO/β-Ga2O3 heterojunction pn diodes

Journal Articles

Enhanced performance of Ku-band GaN MMIC PA through embedded microfluidic cooling

Wen Hong, Li Zhang, Chao Zhang, Fang Zhang, Shao-Zhong Yue, Peng-Bo Du, Xue-Feng Zheng, Xiao-Hua Ma, Yue Hao

Appl. Phys. Lett. 124, 182203 (2024)

https://doi.org/10.1063/5.0201666

Published: May 2024

View article titled, Enhanced performance of Ku-band GaN MMIC PA through embedded microfluidic cooling

Journal Articles

Low turn-on voltage and 2.3 kV β -Ga₂O₃ heterojunction barrier Schottky diodes with Mo anode

Chunxu Su, Hong Zhou, Kun Zhang, Chenlu Wang, Sihan Sun, Hehe Gong, Jiandong Ye, Zhihong Liu, Kui Dang, Zheyuan Hu, Xiaodong Zhang, Jie Wei, Xiaorong Luo, Jincheng Zhang, Rong Zhang, Yue Hao

Appl. Phys. Lett. 124, 173506 (2024)

https://doi.org/10.1063/5.0189890

Published: April 2024

View article titled, Low turn-on voltage and 2.3 kV β -Ga2O3 heterojunction barrier Schottky diodes with Mo anode

Journal Articles

Study on the single-event burnout mechanism of p-GaN gate AlGaN/GaN HEMTs

Xiaohu Wang, Xuefeng Zheng, Danmei Lin, Hao Zhang, Yanrong Cao, Ling Lv, Yingzhe Wang, Peipei Hu, Jie Liu, Xiaohua Ma, Yue Hao

Appl. Phys. Lett. 124, 173502 (2024)

https://doi.org/10.1063/5.0190614

Published: April 2024

View article titled, Study on the single-event burnout mechanism of p-GaN gate AlGaN/GaN HEMTs

Journal Articles

An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high I_ON/I_OFF ratio and steep subthreshold swing

Huake Su, Tao Zhang, Shengrui Xu, Hongchang Tao, Yuan Gao, Xu Liu, Lei Xie, Peng Xiang, Kai Cheng, Yue Hao, Jincheng Zhang

Appl. Phys. Lett. 124, 162102 (2024)

https://doi.org/10.1063/5.0187064

Published: April 2024

View article titled, An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high ION/IOFF ratio and steep subthreshold swing

Journal Articles

Characteristics of β-(Al_xGa_1−x)₂O₃/Ga₂O₃ dual-metal gate modulation-doped field-effect transistors simulated by TCAD

Xiaole Jia, Yibo Wang, Cizhe Fang, Bochang Li, Zhengdong Luo, Yan Liu, Yue Hao, Genquan Han

J. Vac. Sci. Technol. B 42, 032207 (2024)

https://doi.org/10.1116/6.0003502

Published: April 2024

View article titled, Characteristics of β-(AlxGa1−x)2O3/Ga2O3 dual-metal gate modulation-doped field-effect transistors simulated by TCAD

Journal Articles

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

Kai Liu, Chong Wang, Kuo Zhang, Xiaohua Ma, Junchun Bai, Xuefeng Zheng, Ang Li, Yue Hao

J. Appl. Phys. 135, 144501 (2024)

https://doi.org/10.1063/5.0200487

Published: April 2024

View article titled, Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

Journal Articles

Synergistic effect of electrical bias and proton irradiation on the electrical performance of β-Ga₂O₃ p–n diode

Shaozhong Yue, Yingzhe Wang, Xuefeng Zheng, Ailing Pan, Yuehua Hong, Xiaohu Wang, Sunyan Gong, Tian Zhu, Fang Zhang, Xiaohua Ma, Yue Hao

Appl. Phys. Lett. 124, 122105 (2024)

https://doi.org/10.1063/5.0201929

Published: March 2024

View article titled, Synergistic effect of electrical bias and proton irradiation on the electrical performance of β-Ga2O3 p–n diode

Includes: Supplementary data

Journal Articles

High performance low power multilevel oxide based RRAM devices based on TiO_xN_y/Ga₂O₃ hybrid structure

Dongsheng Cui, Zhenhua Lin, Mengyang Kang, Yifei Wang, Xiangxiang Gao, Jie Su, Jinshui Miao, Jincheng Zhang, Yue Hao, Jingjing Chang

Appl. Phys. Lett. 124, 122107 (2024)

https://doi.org/10.1063/5.0199946

Published: March 2024

View article titled, High performance low power multilevel oxide based RRAM devices based on TiOxNy/Ga2O3 hybrid structure

Includes: Supplementary data

Journal Articles

Complementary negative capacitance field-effect transistors based on vertically stacked van der Waals heterostructures

Siqing Zhang, Zheng-Dong Luo, Xuetao Gan, Dawei Zhang, Qiyu Yang, Dongxin Tan, Jie Wen, Yan Liu, Genquan Han, Yue Hao

Appl. Phys. Lett. 124, 093104 (2024)

https://doi.org/10.1063/5.0181137

Published: February 2024

View article titled, Complementary negative capacitance field-effect transistors based on vertically stacked van der Waals heterostructures

Includes: Supplementary data

Journal Articles

Study on the single-event burnout mechanism of GaN MMIC power amplifiers

Hao Zhang, Xuefeng Zheng, Danmei Lin, Ling Lv, Yanrong Cao, Yuehua Hong, Fang Zhang, Xiaohu Wang, Yingzhe Wang, Weidong Zhang, Jianfu Zhang, Xiaohua Ma, Yue Hao

Appl. Phys. Lett. 124, 082105 (2024)

https://doi.org/10.1063/5.0185332

Published: February 2024

View article titled, Study on the single-event burnout mechanism of GaN MMIC power amplifiers

Journal Articles

Enhancing the quality of homoepitaxial ( − 201) β-Ga₂O₃ thin film by MOCVD with in situ pulsed indium

Yao Wang, Jiale Li, Tao Zhang, Wenkai Wu, Wenji Li, Yixin Yao, Ziming Wang, Qian Feng, Yachao Zhang, Jincheng Zhang, Yue Hao

Appl. Phys. Lett. 124, 072105 (2024)

https://doi.org/10.1063/5.0189586

Published: February 2024

View article titled, Enhancing the quality of homoepitaxial ( − 201) β-Ga2O3 thin film by MOCVD with in situ pulsed indium

Includes: Supplementary data

Journal Articles

Record peak current density of over 1500 kA/cm² in highly scaled AlN/GaN double-barrier resonant tunneling diodes on free-standing GaN substrates

Fang Liu, JunShuai Xue, JiaJia Yao, GuanLin Wu, ZuMao Li, RenJie Liu, Zhuang Guo, Kai Zhang, JinCheng Zhang, Yue Hao

Appl. Phys. Lett. 124, 073501 (2024)

https://doi.org/10.1063/5.0180145

Published: February 2024

View article titled, Record peak current density of over 1500 kA/cm2 in highly scaled AlN/GaN double-barrier resonant tunneling diodes on free-standing GaN substrates

NARROW

Topics

The electrical characteristic and trapping effect of AlGaN/GaN HEMTs with Fe and Fe/C co-doped GaN buffer layer

Spin valve effect in the van der Waals heterojunction of Fe₃GeTe₂/tellurene/Fe₃GeTe₂

Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices

Quasi-2D high mobility channel E-mode β -Ga₂O₃ MOSFET with Johnson FOM of 7.56 THz·V

Plasma refractive index sensor based on MIM waveguide coupled with analogy T-shaped and double-ring resonators

Semiconductor lasers for photonic neuromorphic computing and photonic spiking neural networks: A perspective

Threshold voltage instability in III-nitride heterostructure metal–insulator–semiconductor high-electron-mobility transistors: Characterization and interface engineering

On-state electrical stress-induced degradation of NiO/β-Ga₂O₃ heterojunction pn diodes

Enhanced performance of Ku-band GaN MMIC PA through embedded microfluidic cooling

Low turn-on voltage and 2.3 kV β -Ga₂O₃ heterojunction barrier Schottky diodes with Mo anode

Study on the single-event burnout mechanism of p-GaN gate AlGaN/GaN HEMTs

An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high I_ON/I_OFF ratio and steep subthreshold swing

Characteristics of β-(Al_xGa_1−x)₂O₃/Ga₂O₃ dual-metal gate modulation-doped field-effect transistors simulated by TCAD

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

Synergistic effect of electrical bias and proton irradiation on the electrical performance of β-Ga₂O₃ p–n diode

High performance low power multilevel oxide based RRAM devices based on TiO_xN_y/Ga₂O₃ hybrid structure

Complementary negative capacitance field-effect transistors based on vertically stacked van der Waals heterostructures

Study on the single-event burnout mechanism of GaN MMIC power amplifiers

Enhancing the quality of homoepitaxial ( − 201) β-Ga₂O₃ thin film by MOCVD with in situ pulsed indium

Record peak current density of over 1500 kA/cm² in highly scaled AlN/GaN double-barrier resonant tunneling diodes on free-standing GaN substrates

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only