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Journal Articles

Impact of electron velocity modulation on microwave power performance for AlGaN/GaN HFETs

Mingyan Wang, Yuanjie Lv, Heng Zhou, Chao Liu, Peng Cui, Zhaojun Lin

Appl. Phys. Lett. 125, 202105 (2024)

https://doi.org/10.1063/5.0222095

Published: November 2024

View article titled, Impact of electron velocity modulation on microwave power performance for AlGaN/GaN HFETs

Journal Articles

Reliable electrical performance of β-Ga₂O₃ Schottky barrier diode at cryogenic temperatures

Haolan Qu, Wei Huang, Yu Zhang, Jin Sui, Jiaxiang Chen, Baile Chen, David Wei Zhang, Yuangang Wang, Yuanjie Lv, Zhihong Feng, Xinbo Zou

J. Vac. Sci. Technol. A 42, 023418 (2024)

https://doi.org/10.1116/6.0003298

Published: February 2024

View article titled, Reliable electrical performance of β-Ga2O3 Schottky barrier diode at cryogenic temperatures

Journal Articles

Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors

Yang Liu, Chen Fu, Guangyuan Jiang, Guangyuan Zhang, Guang Yang, Yuanjie Lv, Zhaojun Lin

J. Appl. Phys. 134, 165703 (2023)

https://doi.org/10.1063/5.0172695

Published: October 2023

View article titled, Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors

Journal Articles

A thermal boundary resistance measurement method based on a designed chip with the heat source separated from the temperature sensor

Xuan Li, Shiwei Feng, Zhihong Feng, Shijie Pan, Yuanjie Lv, Kun Bai, Xiaozhuang Lu, Junhua Qin, Yamin Zhang

Appl. Phys. Lett. 122, 073501 (2023)

https://doi.org/10.1063/5.0137965

Published: February 2023

View article titled, A thermal boundary resistance measurement method based on a designed chip with the heat source separated from the temperature sensor

Includes: Supplementary data

Journal Articles

Study of electrical transport properties of GaN-based side-gate heterostructure transistors

Heng Zhou, Yuanjie Lv, Mingyan Wang, Peng Cui, Zhaojun Lin

Appl. Phys. Lett. 121, 212107 (2022)

https://doi.org/10.1063/5.0124626

Published: November 2022

View article titled, Study of electrical transport properties of GaN-based side-gate heterostructure transistors

Journal Articles

Improved electrical performance of lateral β-Ga₂O₃ MOSFETs utilizing slanted fin channel structure

Hongyu Liu, Jianing Li, Yuanjie Lv, Yuangang Wang, Xiaoli Lu, Shaobo Dun, Tingting Han, Hongyu Guo, Aimin Bu, Xiaohua Ma, Zhihong Feng, Yue Hao

Appl. Phys. Lett. 121, 202101 (2022)

https://doi.org/10.1063/5.0119694

Published: November 2022

View article titled, Improved electrical performance of lateral β-Ga2O3 MOSFETs utilizing slanted fin channel structure

Journal Articles

A split-gate AlGaN/GaN heterostructure field-effect transistor with an auxiliary gate

Yang Liu, Yuanjie Lv, Heng Zhou, Zhaojun Lin, Yongxiong Yang, Guangyuan Jiang, Yan Zhou, Mingyan Wang

AIP Advances 12, 025012 (2022)

https://doi.org/10.1063/5.0083513

Published: February 2022

View article titled, A split-gate AlGaN/GaN heterostructure field-effect transistor with an auxiliary gate

Journal Articles

Interfacial symmetry breaking induced spin-orbit coupling in wurtzite GaN nanowires

Xingchen Liu, Hongming Guan, Ning Tang, Yuanjie Lv, Ling Chen, Xiaoyue Zhang, Shixiong Zhang, Yunfan Zhang, Xinqiang Wang, Weikun Ge, Bo Shen

Appl. Phys. Lett. 118, 122104 (2021)

https://doi.org/10.1063/5.0042776

Published: March 2021

View article titled, Interfacial symmetry breaking induced spin-orbit coupling in wurtzite GaN nanowires

Journal Articles

Oxygen annealing impact on β -Ga₂O₃ MOSFETs: Improved pinch-off characteristic and output power density

Yuanjie Lv, Hongyu Liu, Yuangang Wang, Xingchang Fu, Chunlei Ma, Xubo Song, Xingye Zhou, Yanni Zhang, Pengfei Dong, Hanghai Du, Shixiong Liang, Tingting Han, Jincheng Zhang, Zhihong Feng, Hong Zhou, Shujun Cai, Yue Hao

Appl. Phys. Lett. 117, 133503 (2020)

https://doi.org/10.1063/5.0021242

Published: September 2020

View article titled, Oxygen annealing impact on β -Ga2O3 MOSFETs: Improved pinch-off characteristic and output power density

Journal Articles

Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors

Guangyuan Jiang, Yuanjie Lv, Zhaojun Lin, Yongxiong Yang, Yang Liu, Shuoshuo Guo, Yan Zhou

AIP Advances 10, 075212 (2020)

https://doi.org/10.1063/5.0012615

Published: July 2020

View article titled, Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors

Journal Articles

Effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field-effect transistors

Peng Cui, Yuanjie Lv, Zhaojun Lin, Chen Fu, Yan Liu

J. Appl. Phys. 122, 124508 (2017)

https://doi.org/10.1063/1.5005518

Published: September 2017

View article titled, Effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field-effect transistors

Journal Articles

Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors

Yan Liu, Zhaojun Lin, Peng Cui, Jingtao Zhao, Chen Fu, Ming Yang, Yuanjie Lv

AIP Advances 7, 085309 (2017)

https://doi.org/10.1063/1.4999442

Published: August 2017

View article titled, Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors

Journal Articles

Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistors

Ming Yang, Yuanjie Lv, Zhihong Feng, Wei Lin, Peng Cui, Yan Liu, Chen Fu, Zhaojun Lin

J. Appl. Phys. 119, 224501 (2016)

https://doi.org/10.1063/1.4953645

Published: June 2016

View article titled, Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistors

Journal Articles

A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors

Jingtao Zhao, Zhaojun Lin, Quanyou Chen, Ming Yang, Peng Cui, Yuanjie Lv, Zhihong Feng

Appl. Phys. Lett. 107, 113502 (2015)

https://doi.org/10.1063/1.4931122

Published: September 2015

View article titled, A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors

Includes: Supplementary data

Journal Articles

Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

Lei Guo, Xuelin Yang, Zhihong Feng, Yuanjie Lv, Jianpeng Cheng, Ling Sang, Fujun Xu, Ning Tang, Xinqiang Wang, Weikun Ge, B. Shen

Appl. Phys. Lett. 105, 242104 (2014)

https://doi.org/10.1063/1.4904418

Published: December 2014

View article titled, Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

Journal Articles

Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes

Jingtao Zhao, Zhaojun Lin, Chongbiao Luan, Yang Zhou, Ming Yang, Yuanjie Lv, Zhihong Feng

Appl. Phys. Lett. 105, 083501 (2014)

https://doi.org/10.1063/1.4894093

Published: August 2014

View article titled, Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes

Journal Articles

Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors

Chongbiao Luan, Zhaojun Lin, Yuanjie Lv, Jingtao Zhao, Yutang Wang, Hong Chen, Zhanguo Wang

J. Appl. Phys. 116, 044507 (2014)

https://doi.org/10.1063/1.4891258

Published: July 2014

View article titled, Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors

Journal Articles

The influence of the AlN barrier thickness on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

Yuanjie Lv, Zhihong Feng, Zhaojun Lin, Ziwu Ji, Jingtao Zhao, Guodong Gu, Tingting Han, Jiayun Yin, Bo Liu, Shujun Cai

J. Appl. Phys. 116, 024504 (2014)

https://doi.org/10.1063/1.4889925

Published: July 2014

View article titled, The influence of the AlN barrier thickness on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

Journal Articles

Green and blue emissions in phase-separated InGaN quantum wells

Fan Wang, Ziwu Ji, Qiang Wang, Xuesong Wang, Shuang Qu, Xiangang Xu, Yuanjie Lv, Zhihong Feng

J. Appl. Phys. 114, 163525 (2013)

https://doi.org/10.1063/1.4827205

Published: October 2013

View article titled, Green and blue emissions in phase-separated InGaN quantum wells

Journal Articles

Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

Yingxia Yu, Zhaojun Lin, Chongbiao Luan, Yuanjie Lv, Zhihong Feng, Ming Yang, Yutang Wang, Hong Chen

AIP Advances 3, 092115 (2013)

https://doi.org/10.1063/1.4821547

Published: September 2013

View article titled, Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

NARROW

Topics

Impact of electron velocity modulation on microwave power performance for AlGaN/GaN HFETs

Reliable electrical performance of β-Ga₂O₃ Schottky barrier diode at cryogenic temperatures

Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors

A thermal boundary resistance measurement method based on a designed chip with the heat source separated from the temperature sensor

Study of electrical transport properties of GaN-based side-gate heterostructure transistors

Improved electrical performance of lateral β-Ga₂O₃ MOSFETs utilizing slanted fin channel structure

A split-gate AlGaN/GaN heterostructure field-effect transistor with an auxiliary gate

Interfacial symmetry breaking induced spin-orbit coupling in wurtzite GaN nanowires

Oxygen annealing impact on β -Ga₂O₃ MOSFETs: Improved pinch-off characteristic and output power density

Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors

Effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field-effect transistors

Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors

Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistors

A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors

Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes

Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors

The influence of the AlN barrier thickness on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

Green and blue emissions in phase-separated InGaN quantum wells

Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

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