1-20 of 32
Youngsoo Park
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates

Available to Purchase
Donghyun Lee, Jong Won Lee, Jeonghwan Jang, In-Su Shin, Lu Jin, Jun Hyuk Park, Jungsub Kim, Jinsub Lee, Hye-Seok Noh, Yong-Il Kim, Youngsoo Park, Gun-Do Lee, Yongjo Park, Jong Kyu Kim, Euijoon Yoon
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 191103 (2017)
https://doi.org/10.1063/1.4983283
Published: May 2017
View articletitled, Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates
Open the PDF for Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates in another window
Includes: Supplementary data
Journal Articles

Variation of the external quantum efficiency with temperature and current density in red, blue, and deep ultraviolet light-emitting diodes

Available to Purchase
Jun Hyuk Park, Jong Won Lee, Dong Yeong Kim, Jaehee Cho, E. Fred Schubert, Jungsub Kim, Jinsub Lee, Yong-Il Kim, Youngsoo Park, Jong Kyu Kim
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 023101 (2016)
https://doi.org/10.1063/1.4939504
Published: January 2016
View articletitled, Variation of the external quantum efficiency with temperature and current density in red, blue, and deep ultraviolet light-emitting diodes
Open the PDF for Variation of the external quantum efficiency with temperature and current density in red, blue, and deep ultraviolet light-emitting diodes in another window
Journal Articles

Dependence of reverse bias leakage on depletion width and V-pit size in InGaN/GaN light-emitting diodes grown on silicon

Available to Purchase
Hyun Kum, Mihyun Kim, Dong-gun Lee, Youngjo Tak, Jongsun Maeng, Joosung Kim, Gilho Gu, Joong Jung Kim, Yongil Kim, Jun-Youn Kim, Youngsoo Park
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 060602 (2015)
https://doi.org/10.1116/1.4933039
Published: October 2015
View articletitled, Dependence of reverse bias leakage on depletion width and V-pit size in InGaN/GaN light-emitting diodes grown on silicon
Open the PDF for Dependence of reverse bias leakage on depletion width and V-pit size in InGaN/GaN light-emitting diodes grown on silicon in another window
Journal Articles

Dynamics of two discrete vortices with different circulations composed of pure electron plasmas

Available to Purchase
Yukihiro Soga, Yasuhiro Mihara, Youngsoo Park
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1668, 030004 (2015)
https://doi.org/10.1063/1.4923113
Published: June 2015
View articletitled, Dynamics of two discrete vortices with different circulations composed of pure electron plasmas
Open the PDF for Dynamics of two discrete vortices with different circulations composed of pure electron plasmas in another window
Journal Articles

Theoretical studies on distribution of resistances in multilevel bipolar oxide resistive memory by Monte Carlo method

Open Access
Ji-Hyun Hur, Seung Ryul Lee, Myoung-Jae Lee, Seong-Ho Cho, Youngsoo Park
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 113504 (2013)
https://doi.org/10.1063/1.4821189
Published: September 2013
View articletitled, Theoretical studies on distribution of resistances in multilevel bipolar oxide resistive memory by Monte Carlo method
Open the PDF for Theoretical studies on distribution of resistances in multilevel bipolar oxide resistive memory by Monte Carlo method in another window
Journal Articles

Analysis of forward tunneling current in InGaN/GaN multiple quantum well light-emitting diodes grown on Si (111) substrate

Available to Purchase
Jaekyun Kim, Youngjo Tak, Joosung Kim, Suhee Chae, Jun-Youn Kim, Youngsoo Park
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 013101 (2013)
https://doi.org/10.1063/1.4812231
Published: July 2013
View articletitled, Analysis of forward tunneling current in InGaN/GaN multiple quantum well light-emitting diodes grown on Si (111) substrate
Open the PDF for Analysis of forward tunneling current in InGaN/GaN multiple quantum well light-emitting diodes grown on Si (111) substrate in another window
Journal Articles

Optical lattices of InGaN quantum well excitons

Available to Purchase
V. V. Chaldyshev, A. S. Bolshakov, E. E. Zavarin, A. V. Sakharov, W. V. Lundin, A. F. Tsatsulnikov, M. A. Yagovkina, Taek Kim, Youngsoo Park
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 251103 (2011)
https://doi.org/10.1063/1.3670499
Published: December 2011
View articletitled, Optical lattices of InGaN quantum well excitons
Open the PDF for Optical lattices of InGaN quantum well excitons in another window
Journal Articles

Highly efficient yellow photoluminescence from {11–22} InGaN multiquantum-well grown on nanoscale pyramid structure

Available to Purchase
Taek Kim, Joosung Kim, Moon-Seung Yang, Sangmoon Lee, Youngsoo Park, U-In Chung, Yonghoon Cho
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 241111 (2010)
https://doi.org/10.1063/1.3524524
Published: December 2010
View articletitled, Highly efficient yellow photoluminescence from {11–22} InGaN multiquantum-well grown on nanoscale pyramid structure
Open the PDF for Highly efficient yellow photoluminescence from {11–22} InGaN multiquantum-well grown on nanoscale pyramid structure in another window
Journal Articles

Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors

Available to Purchase
Chang-Jung Kim, Sangwook Kim, Je-Hun Lee, Jin-Seong Park, Sunil Kim, Jaechul Park, Eunha Lee, Jaechul Lee, Youngsoo Park, Joo Han Kim, Sung Tae Shin, U-In Chung
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 252103 (2009)
https://doi.org/10.1063/1.3275801
Published: December 2009
View articletitled, Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors
Open the PDF for Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors in another window
Journal Articles

Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress

Available to Purchase
Sangwon Lee, Kichan Jeon, Jun-Hyun Park, Sungchul Kim, Dongsik Kong, Dong Myong Kim, Dae Hwan Kim, Sangwook Kim, Sunil Kim, Jihyun Hur, Jae Chul Park, Ihun Song, Chang Jung Kim, Youngsoo Park, U-In Jung
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 132101 (2009)
https://doi.org/10.1063/1.3237169
Published: September 2009
View articletitled, Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress
Open the PDF for Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress in another window
Journal Articles

Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution

Available to Purchase
Kyoung-Kook Kim (김경국), Sam-dong Lee (이삼동), Hyunsoo Kim (김현수), Jae-Chul Park (박재철), Sung-Nam Lee (이성남), Youngsoo Park (박영수), Seong-Ju Park (박성주), Sang-Woo Kim (김상우)
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 071118 (2009)
https://doi.org/10.1063/1.3077606
Published: February 2009
View articletitled, Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution
Open the PDF for Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution in another window
Journal Articles

Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics

Available to Purchase
Kichan Jeon, Changjung Kim, Ihun Song, Jaechul Park, Sunil Kim, Sangwook Kim, Youngsoo Park, Jun-Hyun Park, Sangwon Lee, Dong Myong Kim, Dae Hwan Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 182102 (2008)
https://doi.org/10.1063/1.3013842
Published: November 2008
View articletitled, Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics
Open the PDF for Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics in another window
Journal Articles

Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor’s channel layer

Available to Purchase
Huaxiang Yin, Sunil Kim, Chang Jung Kim, Ihun Song, Jaechul Park, Sangwook Kim, Youngsoo Park
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 172109 (2008)
https://doi.org/10.1063/1.3012386
Published: October 2008
View articletitled, Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor’s channel layer
Open the PDF for Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor’s channel layer in another window
Journal Articles

High-performance amorphous gallium indium zinc oxide thin-film transistors through N 2 O plasma passivation

Available to Purchase
Jaechul Park, Sangwook Kim, Changjung Kim, Sunil Kim, Ihun Song, Huaxiang Yin, Kyoung-Kok Kim, Sunghoon Lee, Kiha Hong, Jaecheol Lee, Jaekwan Jung, Eunha Lee, Kee-Won Kwon, Youngsoo Park
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 053505 (2008)
https://doi.org/10.1063/1.2962985
Published: August 2008
View articletitled, High-performance amorphous gallium indium zinc oxide thin-film transistors through N 2 O plasma passivation
Open the PDF for High-performance amorphous gallium indium zinc oxide thin-film transistors through N 2 O plasma passivation in another window
Journal Articles

Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors

Available to Purchase
Jaechul Park, Ihun Song, Sunil Kim, Sangwook Kim, Changjung Kim, Jaecheol Lee, Hyungik Lee, Eunha Lee, Huaxiang Yin, Kyoung-Kok Kim, Kee-Won Kwon, Youngsoo Park
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 053501 (2008)
https://doi.org/10.1063/1.2966145
Published: August 2008
View articletitled, Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors
Open the PDF for Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors in another window
Journal Articles

Effect of Ga ∕ In ratio on the optical and electrical properties of GaInZnO thin films grown on Si O 2 ∕ Si substrates

Available to Purchase
Donghun Kang, Ihun Song, Changjung Kim, Youngsoo Park, Tae Dong Kang, Ho Suk Lee, Jun-Woo Park, Seoung Ho Baek, Suk-Ho Choi, Hosun Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 091910 (2007)
https://doi.org/10.1063/1.2773952
Published: August 2007
View articletitled, Effect of Ga ∕ In ratio on the optical and electrical properties of GaInZnO thin films grown on Si O 2 ∕ Si substrates
Open the PDF for Effect of Ga ∕ In ratio on the optical and electrical properties of GaInZnO thin films grown on Si O 2 ∕ Si substrates in another window
Journal Articles

Decrease in switching voltage fluctuation of Pt ∕ Ni O x ∕ Pt structure by process control

Available to Purchase
Ranju Jung, Myoung-Jae Lee, Sunae Seo, Dong Chirl Kim, Gyeong-Su Park, Kihong Kim, Seungeon Ahn, Youngsoo Park, In-Kyeong Yoo, Jin-Soo Kim, Bae Ho Park
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 022112 (2007)
https://doi.org/10.1063/1.2755712
Published: July 2007
View articletitled, Decrease in switching voltage fluctuation of Pt ∕ Ni O x ∕ Pt structure by process control
Open the PDF for Decrease in switching voltage fluctuation of Pt ∕ Ni O x ∕ Pt structure by process control in another window
Journal Articles

Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules

Available to Purchase
Donghun Kang, Hyuck Lim, Changjung Kim, Ihun Song, Jaechoel Park, Youngsoo Park, JaeGwan Chung
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 192101 (2007)
https://doi.org/10.1063/1.2723543
Published: May 2007
View articletitled, Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules
Open the PDF for Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules in another window
Journal Articles

Characterization of 3D Trench PZT Capacitors for High Density FRAM Devices by Synchrotron X‐ray Micro‐diffraction

Available to Purchase
Sangmin Shin, Hee Han, Yong Jun Park, Jae‐Young Choi, Youngsoo Park, Sunggi Baik
Journal: AIP Conference Proceedings
AIP Conf. Proc. 879, 1554–1556 (2007)
https://doi.org/10.1063/1.2436361
Published: January 2007
View articletitled, Characterization of 3D Trench PZT Capacitors for High Density FRAM Devices by Synchrotron X‐ray Micro‐diffraction
Open the PDF for Characterization of 3D Trench PZT Capacitors for High Density FRAM Devices by Synchrotron X‐ray Micro‐diffraction in another window
Journal Articles

High trap density and long retention time from self-assembled amorphous Si nanocluster floating gate nonvolatile memory

Available to Purchase
Daigil Cha, Jung H. Shin, Sangjin Park, Eunha Lee, Yoondong Park, Youngsoo Park, In-Kyeong Yoo, Kwang Soo Seol, Suk-Ho Choi
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 243513 (2006)
https://doi.org/10.1063/1.2404586
Published: December 2006
View articletitled, High trap density and long retention time from self-assembled amorphous Si nanocluster floating gate nonvolatile memory
Open the PDF for High trap density and long retention time from self-assembled amorphous Si nanocluster floating gate nonvolatile memory in another window