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Journal Articles

Plasma-assisted annealing of Pt-doped rutile TiO₂ nanoparticles for enhanced decomposition and bacterial inactivation under general lighting

Retsuo Kawakami, Yuta Makino, Shin-ichiro Yanagiya, Akihiro Shirai, Masahito Niibe, Yoshitaka Nakano

J. Vac. Sci. Technol. B 42, 012203 (2024)

https://doi.org/10.1116/6.0003101

Published: January 2024

View articletitled, Plasma-assisted annealing of Pt-doped rutile TiO2 nanoparticles for enhanced decomposition and bacterial inactivation under general lighting

Journal Articles

Deep-level defects in homoepitaxial p-type GaN

Yoshitaka Nakano

J. Vac. Sci. Technol. A 36, 023001 (2018)

https://doi.org/10.1116/1.5017867

Published: February 2018

View articletitled, Deep-level defects in homoepitaxial p-type GaN

Journal Articles

Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates

Masatomo Sumiya, Naoki Toyomitsu, Yoshitaka Nakano, Jianyu Wang, Yoshitomo Harada, Liwen Sang, Takashi Sekiguchi, Tomohiro Yamaguchi, Tohru Honda

APL Mater. 5, 016105 (2017)

https://doi.org/10.1063/1.4974935

Published: January 2017

View articletitled, Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates

Journal Articles

Ar⁺-irradiation-induced damage in hydride vapor-phase epitaxy GaN films

Yoshitaka Nakano, Daisuke Ogawa, Keiji Nakamura, Retsuo Kawakami, Masahito Niibe

J. Vac. Sci. Technol. A 33, 043002 (2015)

https://doi.org/10.1116/1.4922593

Published: June 2015

View articletitled, Ar+-irradiation-induced damage in hydride vapor-phase epitaxy GaN films

Journal Articles

Recovery of x-ray absorption spectral profile in etched TiO₂ thin films

Keiji Sano, Masahito Niibe, Retsuo Kawakami, Yoshitaka Nakano

J. Vac. Sci. Technol. A 33, 031403 (2015)

https://doi.org/10.1116/1.4917012

Published: April 2015

View articletitled, Recovery of x-ray absorption spectral profile in etched TiO2 thin films

Journal Articles

Etching damage and its recovery by soft X-ray irradiation observed in soft X-ray absorption spectra of TiO₂ thin film

Masahito Niibe, Keiji Sano, Takuya Kotaka, Retsuo Kawakami, Kikuo Tominaga, Yoshitaka Nakano

J. Appl. Phys. 113, 126101 (2013)

https://doi.org/10.1063/1.4798301

Published: March 2013

View articletitled, Etching damage and its recovery by soft X-ray irradiation observed in soft X-ray absorption spectra of TiO2 thin film

Journal Articles

Correlation between deep-level defects and turn-on recovery characteristics in AlGaN/GaN hetero-structures

Yoshitaka Nakano, Yoshihiro Irokawa, Yasunobu Sumida, Shuichi Yagi, Hiroji Kawai

J. Appl. Phys. 112, 106103 (2012)

https://doi.org/10.1063/1.4767367

Published: November 2012

View articletitled, Correlation between deep-level defects and turn-on recovery characteristics in AlGaN/GaN hetero-structures

Journal Articles

In-situ photoluminescence monitoring of GaN in plasma exposure

Miao-Gen Chen, Keiji Nakamura, Yoshitaka Nakano, Sen-Jiang Yu, Hideo Sugai

Appl. Phys. Lett. 101, 071105 (2012)

https://doi.org/10.1063/1.4745917

Published: August 2012

View articletitled, In-situ photoluminescence monitoring of GaN in plasma exposure

Journal Articles

Photocapacitance spectroscopy study of deep-level defects in freestanding n -GaN substrates using transparent conductive polymer Schottky contacts

Yoshitaka Nakano, Mickael Lozac’h, Nobuyuki Matsuki, Kazuaki Sakoda, Masatomo Sumiya

J. Vac. Sci. Technol. B 29, 023001 (2011)

https://doi.org/10.1116/1.3549883

Published: January 2011

View articletitled, Photocapacitance spectroscopy study of deep-level defects in freestanding n -GaN substrates using transparent conductive polymer Schottky contacts

Journal Articles

Optical bandgap widening of p -type Cu 2 O films by nitrogen doping

Yoshitaka Nakano, Shu Saeki, Takeshi Morikawa

Appl. Phys. Lett. 94, 022111 (2009)

https://doi.org/10.1063/1.3072804

Published: January 2009

View articletitled, Optical bandgap widening of p -type Cu 2 O films by nitrogen doping

Journal Articles

Trap levels in tris(8-hydroxyquinoline) aluminum studied by deep-level optical spectroscopy

Yoshitaka Nakano, Koji Noda, Hisayoshi Fujikawa, Takeshi Morikawa, Takeshi Ohwaki, Yasunori Taga

Appl. Phys. Lett. 88, 252104 (2006)

https://doi.org/10.1063/1.2214179

Published: June 2006

View articletitled, Trap levels in tris(8-hydroxyquinoline) aluminum studied by deep-level optical spectroscopy

Journal Articles

Electrical characterization of p -type N-doped ZnO films prepared by thermal oxidation of sputtered Zn 3 N 2 films

Yoshitaka Nakano, Takeshi Morikawa, Takeshi Ohwaki, Yasunori Taga

Appl. Phys. Lett. 88, 172103 (2006)

https://doi.org/10.1063/1.2198489

Published: April 2006

View articletitled, Electrical characterization of p -type N-doped ZnO films prepared by thermal oxidation of sputtered Zn 3 N 2 films

Journal Articles

Deep-level characterization of N-doped ZnO films prepared by reactive magnetron sputtering

Yoshitaka Nakano, Takeshi Morikawa, Takeshi Ohwaki, Yasunori Taga

Appl. Phys. Lett. 87, 232104 (2005)

https://doi.org/10.1063/1.2139852

Published: November 2005

View articletitled, Deep-level characterization of N-doped ZnO films prepared by reactive magnetron sputtering

Journal Articles

Electrical characterization of band gap states in C-doped Ti O 2 films

Yoshitaka Nakano, Takeshi Morikawa, Takeshi Ohwaki, Yasunori Taga

Appl. Phys. Lett. 87, 052111 (2005)

https://doi.org/10.1063/1.2008376

Published: July 2005

View articletitled, Electrical characterization of band gap states in C-doped Ti O 2 films

Journal Articles

Deep-level optical spectroscopy investigation of N-doped TiO 2 films

Yoshitaka Nakano, Takeshi Morikawa, Takeshi Ohwaki, Yasunori Taga

Appl. Phys. Lett. 86, 132104 (2005)

https://doi.org/10.1063/1.1896450

Published: March 2005

View articletitled, Deep-level optical spectroscopy investigation of N-doped TiO 2 films

Journal Articles

Effect of p-type activation ambient on acceptor levels in Mg-doped GaN

Yoshitaka Nakano, Osamu Fujishima, Tetsu Kachi

J. Appl. Phys. 96, 415–419 (2004)

https://doi.org/10.1063/1.1755856

Published: July 2004

View articletitled, Effect of p-type activation ambient on acceptor levels in Mg-doped GaN

Journal Articles

n -type doping characteristics of O-implanted GaN

Yoshitaka Nakano, Tetsu Kachi, Takashi Jimbo

J. Vac. Sci. Technol. B 21, 2602–2604 (2003)

https://doi.org/10.1116/1.1621652

Published: November 2003

View articletitled, n -type doping characteristics of O-implanted GaN

Journal Articles

Characteristics of SiO 2 /n- GaN interfaces with β- Ga 2 O 3 interlayers

Yoshitaka Nakano, Tetsu Kachi, Takashi Jimbo

Appl. Phys. Lett. 83, 4336–4338 (2003)

https://doi.org/10.1063/1.1629371

Published: November 2003

View articletitled, Characteristics of SiO 2 /n- GaN interfaces with β- Ga 2 O 3 interlayers

Journal Articles

Inversion behavior in thermally oxidized p- GaN metal–oxide–semiconductor capacitors

Yoshitaka Nakano, Tetsu Kachi, Takashi Jimbo

J. Vac. Sci. Technol. B 21, 2220–2222 (2003)

https://doi.org/10.1116/1.1612937

Published: September 2003

View articletitled, Inversion behavior in thermally oxidized p- GaN metal–oxide–semiconductor capacitors

Journal Articles

Electrical characterization of SiO 2 /n- GaN metal–insulator–semiconductor diodes

Yoshitaka Nakano, Takashi Jimbo

J. Vac. Sci. Technol. B 21, 1364–1368 (2003)

https://doi.org/10.1116/1.1591740

Published: June 2003

View articletitled, Electrical characterization of SiO 2 /n- GaN metal–insulator–semiconductor diodes

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Plasma-assisted annealing of Pt-doped rutile TiO₂ nanoparticles for enhanced decomposition and bacterial inactivation under general lighting

Deep-level defects in homoepitaxial p-type GaN

Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates

Ar⁺-irradiation-induced damage in hydride vapor-phase epitaxy GaN films

Recovery of x-ray absorption spectral profile in etched TiO₂ thin films

Etching damage and its recovery by soft X-ray irradiation observed in soft X-ray absorption spectra of TiO₂ thin film

Correlation between deep-level defects and turn-on recovery characteristics in AlGaN/GaN hetero-structures

In-situ photoluminescence monitoring of GaN in plasma exposure

Photocapacitance spectroscopy study of deep-level defects in freestanding n -GaN substrates using transparent conductive polymer Schottky contacts

Optical bandgap widening of p -type Cu 2 O films by nitrogen doping

Trap levels in tris(8-hydroxyquinoline) aluminum studied by deep-level optical spectroscopy

Electrical characterization of p -type N-doped ZnO films prepared by thermal oxidation of sputtered Zn 3 N 2 films

Deep-level characterization of N-doped ZnO films prepared by reactive magnetron sputtering

Electrical characterization of band gap states in C-doped Ti O 2 films

Deep-level optical spectroscopy investigation of N-doped TiO 2 films

Effect of p-type activation ambient on acceptor levels in Mg-doped GaN

n -type doping characteristics of O-implanted GaN

Characteristics of SiO 2 /n- GaN interfaces with β- Ga 2 O 3 interlayers

Inversion behavior in thermally oxidized p- GaN metal–oxide–semiconductor capacitors

Electrical characterization of SiO 2 /n- GaN metal–insulator–semiconductor diodes

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