1-20 of 59
Yoshio Nishi
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Carbon nanotube thermoelectric devices by direct printing: Toward wearable energy converters

Hye Ryoung Lee, Naoki Furukawa, Antonio J. Ricco, Eric Pop, Yi Cui, Yoshio Nishi
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 173901 (2021)
https://doi.org/10.1063/5.0042349
Published: April 2021
View article titled, Carbon nanotube thermoelectric devices by direct printing: Toward wearable energy converters
Open the PDF for Carbon nanotube thermoelectric devices by direct printing: Toward wearable energy converters in another window
Includes: Supplementary data
Journal Articles

Intrinsic limits of leakage current in self-heating-triggered threshold switches

Editor’s Pick
Ziwen Wang, Suhas Kumar, R. Stanley Williams, Yoshio Nishi, H.-S. Philip Wong
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 183501 (2019)
https://doi.org/10.1063/1.5089261
Published: May 2019
View article titled, Intrinsic limits of leakage current in self-heating-triggered threshold switches
Open the PDF for Intrinsic limits of leakage current in self-heating-triggered threshold switches in another window
Includes: Supplementary data
Journal Articles

Research Update: Ab initio study on resistive memory device optimization trends: Dopant segregation effects and data retention in HfO2−x

Blanka Magyari-Köpe, Yali Song, Dan Duncan, Liang Zhao, Yoshio Nishi
Journal: APL Materials
APL Mater. 6, 058102 (2018)
https://doi.org/10.1063/1.5032120
Published: May 2018
View article titled, Research Update: <em>Ab initio</em> study on resistive memory device optimization trends: Dopant segregation effects and data retention in HfO<sub>2−x</sub>
Open the PDF for Research Update: <em>Ab initio</em> study on resistive memory device optimization trends: Dopant segregation effects and data retention in HfO<sub>2−x</sub> in another window
Journal Articles

Transient dynamics of NbOx threshold switches explained by Poole-Frenkel based thermal feedback mechanism

Ziwen Wang, Suhas Kumar, Yoshio Nishi, H.-S. Philip Wong
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 193503 (2018)
https://doi.org/10.1063/1.5027152
Published: May 2018
View article titled, Transient dynamics of NbO<sub>x</sub> threshold switches explained by Poole-Frenkel based thermal feedback mechanism
Open the PDF for Transient dynamics of NbO<sub>x</sub> threshold switches explained by Poole-Frenkel based thermal feedback mechanism in another window
Includes: Supplementary data
Journal Articles

Effect of thermal insulation on the electrical characteristics of NbOx threshold switches

Ziwen Wang, Suhas Kumar, H.-S. Philip Wong, Yoshio Nishi
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 073102 (2018)
https://doi.org/10.1063/1.5015941
Published: February 2018
View article titled, Effect of thermal insulation on the electrical characteristics of NbO<sub>x</sub> threshold switches
Open the PDF for Effect of thermal insulation on the electrical characteristics of NbO<sub>x</sub> threshold switches in another window
Includes: Supplementary data
Journal Articles

Ultra-thin and high-response transparent and flexible heater based on carbon nanotube film

Yeji Kim, Hye Ryoung Lee, Takeshi Saito, Yoshio Nishi
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 153301 (2017)
https://doi.org/10.1063/1.4978596
Published: April 2017
View article titled, Ultra-thin and high-response transparent and flexible heater based on carbon nanotube film
Open the PDF for Ultra-thin and high-response transparent and flexible heater based on carbon nanotube film in another window
Includes: Supplementary data
Journal Articles

Oxygen migration during resistance switching and failure of hafnium oxide memristors

Suhas Kumar, Ziwen Wang, Xiaopeng Huang, Niru Kumari, Noraica Davila, John Paul Strachan, David Vine, A. L. David Kilcoyne, Yoshio Nishi, R. Stanley Williams
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 103503 (2017)
https://doi.org/10.1063/1.4974535
Published: March 2017
View article titled, Oxygen migration during resistance switching and failure of hafnium oxide memristors
Open the PDF for Oxygen migration during resistance switching and failure of hafnium oxide memristors in another window
Includes: Supplementary data
Journal Articles

Extrinsic time-dependent dielectric breakdown of low-k organosilicate thin films from vacuum-ultraviolet irradiation

Xiangyu Guo, Dongfei Pei, Huifeng Zheng, Weiyi Li, J. Leon Shohet, Sean W. King, Yi-Hung Lin, Hok-Sum Fung, Cheng-Chi Chen, Yoshio Nishi
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 35, 021509 (2017)
https://doi.org/10.1116/1.4974315
Published: January 2017
View article titled, Extrinsic time-dependent dielectric breakdown of low-k organosilicate thin films from vacuum-ultraviolet irradiation
Open the PDF for Extrinsic time-dependent dielectric breakdown of low-k organosilicate thin films from vacuum-ultraviolet irradiation in another window
Journal Articles

Increased photoluminescence from single-mode microwave annealing of N-type Ge-on-Si

Lennon Y. T. Lee, Yoshimasa Watanabe, Yoshio Nishi
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 112105 (2016)
https://doi.org/10.1063/1.4944578
Published: March 2016
View article titled, Increased photoluminescence from single-mode microwave annealing of N-type Ge-on-Si
Open the PDF for Increased photoluminescence from single-mode microwave annealing of N-type Ge-on-Si in another window
Journal Articles

Characterization of electronic structure of periodically strained graphene

Marjan Aslani, C. Michael Garner, Suhas Kumar, Dennis Nordlund, Piero Pianetta, Yoshio Nishi
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 183507 (2015)
https://doi.org/10.1063/1.4934701
Published: November 2015
View article titled, Characterization of electronic structure of periodically strained graphene
Open the PDF for Characterization of electronic structure of periodically strained graphene in another window
Includes: Supplementary data
Journal Articles

Fluorophore-based sensor for oxygen radicals in processing plasmas

Faraz A. Choudhury, Grzegorz Sabat, Michael R. Sussman, Yoshio Nishi, J. Leon Shohet
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 33, 061305 (2015)
https://doi.org/10.1116/1.4930315
Published: September 2015
View article titled, Fluorophore-based sensor for oxygen radicals in processing plasmas
Open the PDF for Fluorophore-based sensor for oxygen radicals in processing plasmas in another window
Journal Articles

In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors

Suhas Kumar, Catherine E. Graves, John Paul Strachan, A. L. David Kilcoyne, Tolek Tyliszczak, Yoshio Nishi, R. Stanley Williams
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 034502 (2015)
https://doi.org/10.1063/1.4926477
Published: July 2015
View article titled, In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors
Open the PDF for In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors in another window
Includes: Supplementary data
Journal Articles

Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: Effects of oxide phases, stoichiometry, and dopant concentrations

Liang Zhao, Sergiu Clima, Blanka Magyari-Köpe, Malgorzata Jurczak, Yoshio Nishi
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 013504 (2015)
https://doi.org/10.1063/1.4926337
Published: July 2015
View article titled, <em>Ab initio</em> modeling of oxygen-vacancy formation in doped-HfO<sub>x</sub> RRAM: Effects of oxide phases, stoichiometry, and dopant concentrations
Open the PDF for <em>Ab initio</em> modeling of oxygen-vacancy formation in doped-HfO<sub>x</sub> RRAM: Effects of oxide phases, stoichiometry, and dopant concentrations in another window
Journal Articles

Amorphorized tantalum-nickel binary films for metal gate applications

Jiaomin Ouyang, Ranida Wongpiya, Michael D. Deal, Bruce M. Clemens, Yoshio Nishi
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 151903 (2015)
https://doi.org/10.1063/1.4918375
Published: April 2015
View article titled, Amorphorized tantalum-nickel binary films for metal gate applications
Open the PDF for Amorphorized tantalum-nickel binary films for metal gate applications in another window
Journal Articles

Structural and electrical characterization of CoTiN metal gates

Ranida Wongpiya, Jiaomin Ouyang, Chia-Jung Chung, Duc T. Duong, Michael Deal, Yoshio Nishi, Bruce Clemens
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 075304 (2015)
https://doi.org/10.1063/1.4908547
Published: February 2015
View article titled, Structural and electrical characterization of CoTiN metal gates
Open the PDF for Structural and electrical characterization of CoTiN metal gates in another window
Journal Articles

Effects of ZrO2 doping on HfO2 resistive switching memory characteristics

Seung Wook Ryu, Seongjae Cho, Joonsuk Park, Jungsuk Kwac, Hyeong Joon Kim, Yoshio Nishi
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 072102 (2014)
https://doi.org/10.1063/1.4893568
Published: August 2014
View article titled, Effects of ZrO<sub>2</sub> doping on HfO<sub>2</sub> resistive switching memory characteristics
Open the PDF for Effects of ZrO<sub>2</sub> doping on HfO<sub>2</sub> resistive switching memory characteristics in another window
Journal Articles

Time-dependent dielectric breakdown measurements of porous organosilicate glass using mercury and solid metal probes

Dongfei Pei, Michael T. Nichols, Sean W. King, James S. Clarke, Yoshio Nishi, J. Leon Shohet
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 32, 051509 (2014)
https://doi.org/10.1116/1.4891563
Published: August 2014
View article titled, Time-dependent dielectric breakdown measurements of porous organosilicate glass using mercury and solid metal probes
Open the PDF for Time-dependent dielectric breakdown measurements of porous organosilicate glass using mercury and solid metal probes in another window
Journal Articles

Effect of water uptake on the fracture behavior of low-k organosilicate glass

Xiangyu Guo, Joseph E. Jakes, Samer Banna, Yoshio Nishi, J. Leon Shohet
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 32, 031512 (2014)
https://doi.org/10.1116/1.4871680
Published: April 2014
View article titled, Effect of water uptake on the fracture behavior of low-<em>k</em> organosilicate glass
Open the PDF for Effect of water uptake on the fracture behavior of low-<em>k</em> organosilicate glass in another window
Journal Articles

Physical origins of ON-OFF switching in ReRAM via VO based conducting channels

Katsumasa Kamiya, Moon Young Yang, Seong-Geon Park, Blanka Magyari-Köpe, Yoshio Nishi, Masaaki Niwa, Kenji Shiraishi
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1566, 11–12 (2013)
https://doi.org/10.1063/1.4848260
Published: December 2013
View article titled, Physical origins of ON-OFF switching in ReRAM via V<sub>O</sub> based conducting channels
Open the PDF for Physical origins of ON-OFF switching in ReRAM via V<sub>O</sub> based conducting channels in another window
Journal Articles

Charge-dependent oxygen vacancy diffusion in Al2O3-based resistive-random-access-memories

Moon Young Yang, Katsumasa Kamiya, Blanka Magyari-Köpe, Masaaki Niwa, Yoshio Nishi, Kenji Shiraishi
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 093504 (2013)
https://doi.org/10.1063/1.4819772
Published: August 2013
View article titled, Charge-dependent oxygen vacancy diffusion in Al<sub>2</sub>O<sub>3</sub>-based resistive-random-access-memories
Open the PDF for Charge-dependent oxygen vacancy diffusion in Al<sub>2</sub>O<sub>3</sub>-based resistive-random-access-memories in another window