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Yoshiaki Nakamura
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Journal Articles

Phonon diffraction and interference using nanometric features

Paul Desmarchelier, Efstratios Nikidis, Roman Anufriev, Anne Tanguy, Yoshiaki Nakamura, Joseph Kioseoglou, Konstantinos Termentzidis
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 015103 (2024)
https://doi.org/10.1063/5.0179369
Published: January 2024
View article titled, Phonon diffraction and interference using nanometric features
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Journal Articles

Interface design of transparent thermoelectric epitaxial ZnO/SnO2 multilayer film for simultaneous realization of low thermal conductivity and high optical transmittance

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Takafumi Ishibe, Yuki Komatsubara, Toranosuke Katayama, Yuichiro Yamashita, Nobuyasu Naruse, Yutaka Mera, Azusa N. Hattori, Hidekazu Tanaka, Yoshiaki Nakamura
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 041603 (2023)
https://doi.org/10.1063/5.0124814
Published: January 2023
View article titled, Interface design of transparent thermoelectric epitaxial ZnO/SnO<sub>2</sub> multilayer film for simultaneous realization of low thermal conductivity and high optical transmittance
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Journal Articles

Low thermal conductivity of complex thermoelectric barium silicide film epitaxially grown on Si

Takafumi Ishibe, Jinichiro Chikada, Tsukasa Terada, Yuki Komatsubara, Reona Kitaura, Suguru Yachi, Yudai Yamashita, Takuma Sato, Takashi Suemasu, Yoshiaki Nakamura
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 141603 (2021)
https://doi.org/10.1063/5.0063531
Published: October 2021
View article titled, Low thermal conductivity of complex thermoelectric barium silicide film epitaxially grown on Si
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Includes: Supplementary data
Journal Articles

Carrier and phonon transport control by domain engineering for high-performance transparent thin film thermoelectric generator

Takafumi Ishibe, Atsuki Tomeda, Yuki Komatsubara, Reona Kitaura, Mutsunori Uenuma, Yukiharu Uraoka, Yuichiro Yamashita, Yoshiaki Nakamura
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 151601 (2021)
https://doi.org/10.1063/5.0048577
Published: April 2021
View article titled, Carrier and phonon transport control by domain engineering for high-performance transparent thin film thermoelectric generator
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Includes: Supplementary data
Journal Articles

Direct mapping of temperature-difference-induced potential variation under non-thermal equilibrium

Yuki Komatsubara, Takafumi Ishibe, Yuji Miyato, Shunya Sakane, Yoshiaki Nakamura
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 091605 (2021)
https://doi.org/10.1063/5.0038363
Published: March 2021
View article titled, Direct mapping of temperature-difference-induced potential variation under non-thermal equilibrium
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Includes: Supplementary data
Journal Articles

Thermoelectric Si1−xGex and Ge epitaxial films on Si(001) with controlled composition and strain for group IV element-based thermoelectric generators

Tatsuhiko Taniguchi, Takafumi Ishibe, Ryoya Hosoda, Youya Wagatsuma, Md. Mahfuz Alam, Kentarou Sawano, Mutsunori Uenuma, Yukiharu Uraoka, Yuichiro Yamashita, Nobuya Mori, Yoshiaki Nakamura
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 141602 (2020)
https://doi.org/10.1063/5.0023820
Published: October 2020
View article titled, Thermoelectric Si<sub>1−</sub><sub><em>x</em></sub>Ge<sub><em>x</em></sub> and Ge epitaxial films on Si(001) with controlled composition and strain for group IV element-based thermoelectric generators
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Includes: Supplementary data
Journal Articles

An advanced 2ω method enabling thermal conductivity measurement for various sample thicknesses: From thin films to bulk materials

Kosuke Mitarai, Ryo Okuhata, Jinichiro Chikada, Tatsuya Kaneko, Yuto Uematsu, Yuki Komatsubara, Takafumi Ishibe, Yoshiaki Nakamura
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 015102 (2020)
https://doi.org/10.1063/5.0007302
Published: July 2020
View article titled, An advanced 2ω method enabling thermal conductivity measurement for various sample thicknesses: From thin films to bulk materials
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Journal Articles

Impact of metal silicide nanocrystals on the resistance ratio in resistive switching of epitaxial Fe3O4 films on Si substrates

Takafumi Ishibe, Yuto Uematsu, Nobuyasu Naruse, Yutaka Mera, Yoshiaki Nakamura
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 181601 (2020)
https://doi.org/10.1063/1.5143960
Published: May 2020
View article titled, Impact of metal silicide nanocrystals on the resistance ratio in resistive switching of epitaxial Fe<sub>3</sub>O<sub>4</sub> films on Si substrates
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Includes: Supplementary data
Journal Articles

High thermoelectric performance in high crystallinity epitaxial Si films containing silicide nanodots with low thermal conductivity

Shunya Sakane, Takafumi Ishibe, Takahiro Hinakawa, Nobuyasu Naruse, Yutaka Mera, Md. Mahfuz Alam, Kentarou Sawano, Yoshiaki Nakamura
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 182104 (2019)
https://doi.org/10.1063/1.5126910
Published: October 2019
View article titled, High thermoelectric performance in high crystallinity epitaxial Si films containing silicide nanodots with low thermal conductivity
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Includes: Supplementary data
Journal Articles

Resistive switching at the high quality metal/insulator interface in Fe3O4/SiO2/α-FeSi2/Si stacking structure

Takafumi Ishibe, Tsubasa Kurokawa, Nobuyasu Naruse, Yoshiaki Nakamura
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 141601 (2018)
https://doi.org/10.1063/1.5048827
Published: October 2018
View article titled, Resistive switching at the high quality metal/insulator interface in Fe<sub>3</sub>O<sub>4</sub>/SiO<sub>2</sub>/<em>α</em>-FeSi<sub>2</sub>/Si stacking structure
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Includes: Supplementary data
Journal Articles

Resistive switching characteristics of isolated core-shell iron oxide/germanium nanocrystals epitaxially grown on Si substrates

Hideki Matsui, Takafumi Ishibe, Tsukasa Terada, Shunya Sakane, Kentaro Watanabe, Shotaro Takeuchi, Akira Sakai, Shigeru Kimura, Yoshiaki Nakamura
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 031601 (2018)
https://doi.org/10.1063/1.5013349
Published: January 2018
View article titled, Resistive switching characteristics of isolated core-shell iron oxide/germanium nanocrystals epitaxially grown on Si substrates
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Includes: Supplementary data
Journal Articles

Epitaxial multilayers of β-FeSi2 nanodots/Si for Si-based nanostructured electronic materials

Shunya Sakane, Masayuki Isogawa, Kentaro Watanabe, Jun Kikkawa, Shotaro Takeuchi, Akira Sakai, Yoshiaki Nakamura
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 35, 041402 (2017)
https://doi.org/10.1116/1.4984107
Published: June 2017
View article titled, Epitaxial multilayers of <em>β</em>-FeSi<sub>2</sub> nanodots/Si for Si-based nanostructured electronic materials
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Journal Articles

Luminescence properties of Si-capped β-FeSi2 nanodots epitaxially grown on Si(001) and (111) substrates

Shogo Amari, Yoshiaki Nakamura, Masakazu Ichikawa
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 084306 (2014)
https://doi.org/10.1063/1.4867037
Published: February 2014
View article titled, Luminescence properties of Si-capped <em>β</em>-FeSi<sub>2</sub> nanodots epitaxially grown on Si(001) and (111) substrates
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Journal Articles

Control of epitaxial growth of Fe-based nanocrystals on Si substrates using well-controlled nanometer-sized interface

Yoshiaki Nakamura, Ryota Sugimoto, Takafumi Ishibe, Hideki Matsui, Jun Kikkawa, Akira Sakai
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 044301 (2014)
https://doi.org/10.1063/1.4862642
Published: January 2014
View article titled, Control of epitaxial growth of Fe-based nanocrystals on Si substrates using well-controlled nanometer-sized interface
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Journal Articles

Nanoscale-resolved near-infrared photoabsorption spectroscopy and imaging of individual gallium antimonide quantum dots

Nobuyasu Naruse, Yoshiaki Nakamura, Yutaka Mera, Masakazu Ichikawa, Koji Maeda
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 011803 (2014)
https://doi.org/10.1116/1.4843115
Published: December 2013
View article titled, Nanoscale-resolved near-infrared photoabsorption spectroscopy and imaging of individual gallium antimonide quantum dots
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Journal Articles

Influence of nanometer-sized interface on reaction of iron nanocrystals epitaxially grown on silicon substrates with oxygen gas

Hironobu Hamanaka, Yoshiaki Nakamura, Takafumi Ishibe, Jun Kikkawa, Akira Sakai
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 114309 (2013)
https://doi.org/10.1063/1.4821770
Published: September 2013
View article titled, Influence of nanometer-sized interface on reaction of iron nanocrystals epitaxially grown on silicon substrates with oxygen gas
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Journal Articles

Investigating the origin of intense photoluminescence in Si capping layer on Ge1−xSnx nanodots by transmission electron microscopy

Jun Kikkawa, Yoshiaki Nakamura, Norihito Fujinoki, Masakazu Ichikawa
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 074302 (2013)
https://doi.org/10.1063/1.4792647
Published: February 2013
View article titled, Investigating the origin of intense photoluminescence in Si capping layer on Ge<sub>1−x</sub>Sn<sub>x</sub> nanodots by transmission electron microscopy
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Includes: Supplementary data
Journal Articles

Scanning tunneling microscope-based local electroluminescence spectroscopy of p-AlGaAs/i-GaAs/n-AlGaAs double heterostructure

Kentaro Watanabe, Masakazu Ichikawa, Yoshiaki Nakamura, Shigeyuki Kuboya, Ryuji Katayama, Kentaro Onabe
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 021802 (2012)
https://doi.org/10.1116/1.3684985
Published: February 2012
View article titled, Scanning tunneling microscope-based local electroluminescence spectroscopy of p-AlGaAs/i-GaAs/n-AlGaAs double heterostructure
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Journal Articles

Self-organization of two-dimensional SiGe nanodot arrays using selective etching of pure-edge dislocation network

Yoshiaki Nakamura, Masahiko Takahashi, Tatsuki Fujiwara, Jun Kikkawa, Akira Sakai, Osamu Nakatsuka, Shigeaki Zaima
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 044301–044301-4 (2011)
https://doi.org/10.1063/1.3549158
Published: February 2011
View article titled, Self-organization of two-dimensional SiGe nanodot arrays using selective etching of pure-edge dislocation network
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Journal Articles

Photoluminescence from Si-capped GeSn nanodots on Si substrates formed using an ultrathin SiO 2 film technique

Yoshiaki Nakamura, Norihiko Fujinoki, Masakazu Ichikawa
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 014309 (2009)
https://doi.org/10.1063/1.3159902
Published: July 2009
View article titled, Photoluminescence from Si-capped GeSn nanodots on Si substrates formed using an ultrathin SiO 2 film technique
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