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Journal Articles

Thermal budget study to simultaneously achieve low-temperature ( < 400 ° C) process and high endurance of ferroelectric Hf_0.5Zr_0.5O₂ thin films

Jongmug Kang, Seongbin Park, Hye Ryeon Park, Seungbin Lee, Jin-Hyun Kim, Minjong Lee, Dushyant M. Narayan, Jeong Gyu Yoo, Geon Park, Harrison Sejoon Kim, Yong Chan Jung, Rino Choi, Jiyoung Kim, Si Joon Kim

Appl. Phys. Lett. 126, 102903 (2025)

https://doi.org/10.1063/5.0256712

Published: March 2025

View articletitled, Thermal budget study to simultaneously achieve low-temperature ( < 400 ° C) process and high endurance of ferroelectric Hf0.5Zr0.5O2 thin films

Journal Articles

Robust low-temperature (350 °C) ferroelectric Hf_0.5Zr_0.5O₂ fabricated using anhydrous H₂O₂ as the ALD oxidant

Yong Chan Jung, Jin-Hyun Kim, Heber Hernandez-Arriaga, Jaidah Mohan, Su Min Hwang, Dan N. Le, Akshay Sahota, Harrison Sejoon Kim, Kihyun Kim, Rino Choi, Chang-Yong Nam, Daniel Alvarez, Jr., Jeffrey Spiegelman, Si Joon Kim, Jiyoung Kim

Appl. Phys. Lett. 121, 222901 (2022)

https://doi.org/10.1063/5.0126695

Published: November 2022

View articletitled, Robust low-temperature (350 °C) ferroelectric Hf0.5Zr0.5O2 fabricated using anhydrous H2O2 as the ALD oxidant

Journal Articles

High wet-etch resistance SiO₂ films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane

Su Min Hwang, Harrison Sejoon Kim, Dan N. Le, Akshay Sahota, Jaebeom Lee, Yong Chan Jung, Sang Woo Kim, Si Joon Kim, Rino Choi, Jinho Ahn, Byung Keun Hwang, Xiaobing Zhou, Jiyoung Kim

J. Vac. Sci. Technol. A 40, 022406 (2022)

https://doi.org/10.1116/6.0001519

Published: February 2022

View articletitled, High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane

Journal Articles

Low-thermal-budget (300 °C) ferroelectric TiN/Hf_0.5Zr_0.5O₂/TiN capacitors realized using high-pressure annealing

Si Joon Kim, Yong Chan Jung, Jaidah Mohan, Hyo Jeong Kim, Sung Min Rho, Min Seong Kim, Jeong Gyu Yoo, Hye Ryeon Park, Heber Hernandez-Arriaga, Jin-Hyun Kim, Hyung Tae Kim, Dong Hyun Choi, Joohye Jung, Su Min Hwang, Harrison Sejoon Kim, Hyun Jae Kim, Jiyoung Kim

Appl. Phys. Lett. 119, 242901 (2021)

https://doi.org/10.1063/5.0075466

Published: December 2021

View articletitled, Low-thermal-budget (300 °C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing

Includes: Supplementary data

Journal Articles

Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors

Akshay Sahota, Harrison Sejoon Kim, Jaidah Mohan, Dan N. Le, Yong Chan Jung, Si Joon Kim, Jang-Sik Lee, Jinho Ahn, Heber Hernandez-Arriaga, Jiyoung Kim

AIP Advances 11, 115213 (2021)

https://doi.org/10.1063/5.0066311

Published: November 2021

View articletitled, Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors

Includes: Supplementary data

Journal Articles

Correlation between ferroelectricity and ferroelectric orthorhombic phase of Hf_xZr_1−xO₂ thin films using synchrotron x-ray analysis

Takashi Onaya, Toshihide Nabatame, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, Naomi Sawamoto, Chang-Yong Nam, Esther H. R. Tsai, Takahiro Nagata, Jiyoung Kim, Atsushi Ogura

APL Mater. 9, 031111 (2021)

https://doi.org/10.1063/5.0035848

Published: March 2021

View articletitled, Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1−xO2 thin films using synchrotron x-ray analysis

Includes: Supplementary data

Journal Articles

Ferroelectric polarization retention with scaling of Hf_0.5Zr_0.5O₂ on silicon

Jaidah Mohan, Heber Hernandez-Arriaga, Yong Chan Jung, Takashi Onaya, Chang-Yong Nam, Esther H. R. Tsai, Si Joon Kim, Jiyoung Kim

Appl. Phys. Lett. 118, 102903 (2021)

https://doi.org/10.1063/5.0035579

Published: March 2021

View articletitled, Ferroelectric polarization retention with scaling of Hf0.5Zr0.5O2 on silicon

Includes: Supplementary data

Journal Articles

Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick Hf_xZr_1−xO₂/ZrO₂ bilayer by atomic layer deposition

Takashi Onaya, Toshihide Nabatame, Mari Inoue, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, Naomi Sawamoto, Takahiro Nagata, Jiyoung Kim, Atsushi Ogura

Appl. Phys. Lett. 117, 232902 (2020)

https://doi.org/10.1063/5.0029709

Published: December 2020

View articletitled, Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick HfxZr1−xO2/ZrO2 bilayer by atomic layer deposition

Includes: Supplementary data

Journal Articles

Enhanced resistive switching characteristics of HfO_x insulator fabricated by atomic layer deposition and La(NO₃)₃·6H₂O solution as catalytic oxidant

Yong Chan Jung, In-Sung Park, Sejong Seong, Taehoon Lee, Seon Yong Kim, Jinho Ahn

J. Vac. Sci. Technol. A 38, 032405 (2020)

https://doi.org/10.1116/1.5134828

Published: March 2020

View articletitled, Enhanced resistive switching characteristics of HfOx insulator fabricated by atomic layer deposition and La(NO3)3·6H2O solution as catalytic oxidant

Journal Articles

GeO_x interfacial layer scavenging remotely induced by metal electrode in metal/HfO₂/GeO_x/Ge capacitors

Taehoon Lee, Yong Chan Jung, Sejong Seong, Sung Bo Lee, In-Sung Park, Jinho Ahn

Appl. Phys. Lett. 109, 023108 (2016)

https://doi.org/10.1063/1.4958874

Published: July 2016

View articletitled, GeOx interfacial layer scavenging remotely induced by metal electrode in metal/HfO2/GeOx/Ge capacitors

Journal Articles

Metal-HfO₂-Ge capacitor: Its enhanced charge trapping properties with S-treated substrate and atomic-layer-deposited HfO₂ layer

In-Sung Park, Yong Chan Jung, Sejong Seong, Jinho Ahn, Sung Bo Lee

J. Vac. Sci. Technol. A 33, 01A153 (2015)

https://doi.org/10.1116/1.4904730

Published: December 2014

View articletitled, Metal-HfO2-Ge capacitor: Its enhanced charge trapping properties with S-treated substrate and atomic-layer-deposited HfO2 layer

Journal Articles

Anode dependence of set voltage in resistive switching of metal/HfO₂/metal resistors

In-Sung Park, Yong Chan Jung, Jinho Ahn

Appl. Phys. Lett. 105, 223512 (2014)

https://doi.org/10.1063/1.4903805

Published: December 2014

View articletitled, Anode dependence of set voltage in resistive switching of metal/HfO2/metal resistors

Journal Articles

Dielectric function of Si_1−xGe_x films grown on silicon-on-insulator substrates

In-Sung Park, Yong Chan Jung, Jinho Ahn, Tae-Hun Shim, Du-Yeong Lee, Jea-Gun Park

J. Appl. Phys. 115, 233707 (2014)

https://doi.org/10.1063/1.4881457

Published: June 2014

View articletitled, Dielectric function of Si1−xGex films grown on silicon-on-insulator substrates

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Thermal budget study to simultaneously achieve low-temperature ( < 400 ° C) process and high endurance of ferroelectric Hf_0.5Zr_0.5O₂ thin films

Robust low-temperature (350 °C) ferroelectric Hf_0.5Zr_0.5O₂ fabricated using anhydrous H₂O₂ as the ALD oxidant

High wet-etch resistance SiO₂ films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane

Low-thermal-budget (300 °C) ferroelectric TiN/Hf_0.5Zr_0.5O₂/TiN capacitors realized using high-pressure annealing

Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors

Correlation between ferroelectricity and ferroelectric orthorhombic phase of Hf_xZr_1−xO₂ thin films using synchrotron x-ray analysis

Ferroelectric polarization retention with scaling of Hf_0.5Zr_0.5O₂ on silicon

Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick Hf_xZr_1−xO₂/ZrO₂ bilayer by atomic layer deposition

Enhanced resistive switching characteristics of HfO_x insulator fabricated by atomic layer deposition and La(NO₃)₃·6H₂O solution as catalytic oxidant

GeO_x interfacial layer scavenging remotely induced by metal electrode in metal/HfO₂/GeO_x/Ge capacitors

Metal-HfO₂-Ge capacitor: Its enhanced charge trapping properties with S-treated substrate and atomic-layer-deposited HfO₂ layer

Anode dependence of set voltage in resistive switching of metal/HfO₂/metal resistors

Dielectric function of Si_1−xGe_x films grown on silicon-on-insulator substrates

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