1-6 of 6
Yewu Wang
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Co-optimizing of H-curing, stress, and thermal annealing—A more effective way for realizing FEOL-BEOL compatible eMRAM chip

Available to Purchase
Zhimeng Yu, Xiaolei Yang, Xiaonan Zhao, Yanjie Li, Shikun He, Yewu Wang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 062202 (2024)
https://doi.org/10.1116/6.0003934
Published: October 2024
View articletitled, Co-optimizing of H-curing, stress, and thermal annealing—A more effective way for realizing FEOL-BEOL compatible eMRAM chip
Open the PDF for Co-optimizing of H-curing, stress, and thermal annealing—A more effective way for realizing FEOL-BEOL compatible eMRAM chip in another window
Journal Articles

Stacking the MoS2/GeSe2 vertical van der Waals heterostructure for memory device

Available to Purchase
Jiadong Yao, Yali Liu, Wenxuan Guo, Xinyue Niu, Mengge Li, Xiaoxiang Wu, Ying Yu, Xiaoyuan Yan, Boran Xing, Shucheng Zhang, Jian Sha, Yewu Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 153104 (2020)
https://doi.org/10.1063/5.0021579
Published: October 2020
View articletitled, Stacking the MoS2/GeSe2 vertical van der Waals heterostructure for memory device
Open the PDF for Stacking the MoS2/GeSe2 vertical van der Waals heterostructure for memory device in another window
Includes: Supplementary data
Journal Articles

Resistive memory based on single-crystalline black phosphorus flake/HfOx structure

FeaturedOpen Access
Xiaoyuan Yan, Xueting Wang, Boran Xing, Ying Yu, Jiadong Yao, Xinyue Niu, Mengge Li, Jian Sha, Yewu Wang
Journal: AIP Advances
AIP Advances 10, 075013 (2020)
https://doi.org/10.1063/5.0004526
Published: July 2020
View articletitled, Resistive memory based on single-crystalline black phosphorus flake/HfOx structure
Open the PDF for Resistive memory based on single-crystalline black phosphorus flake/HfOx structure in another window
Includes: Supplementary data
Journal Articles

Design and build MoS2/Au/MoS2 sandwich structure to significantly enhance the photoluminescence

Open Access
Shucheng Zhang, Liao Guan, Xinyue Niu, Jiadong Yao, Xiaoyuan Yan, Boran Xing, Ying Yu, Jian Sha, Yewu Wang
Journal: AIP Advances
AIP Advances 9, 095305 (2019)
https://doi.org/10.1063/1.5115235
Published: September 2019
View articletitled, Design and build MoS2/Au/MoS2 sandwich structure to significantly enhance the photoluminescence
Open the PDF for Design and build MoS2/Au/MoS2 sandwich structure to significantly enhance the photoluminescence in another window
Includes: Supplementary data
Journal Articles

Influence of metal electrode on the performance of ZnO based resistance switching memories

Available to Purchase
Xueting Wang, Haolei Qian, Liao Guan, Wei Wang, Boran Xing, Xiaoyuan Yan, Shucheng Zhang, Jian Sha, Yewu Wang
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 154301 (2017)
https://doi.org/10.1063/1.4996975
Published: October 2017
View articletitled, Influence of metal electrode on the performance of ZnO based resistance switching memories
Open the PDF for Influence of metal electrode on the performance of ZnO based resistance switching memories in another window
Includes: Supplementary data
Journal Articles

High-performance ZnO nanowire field-effect transistor with forming gas treated SiO2 gate dielectrics

Available to Purchase
Haolei Qian, Yewu Wang, Yanjun Fang, Lin Gu, Ren Lu, Jian Sha
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 164308 (2015)
https://doi.org/10.1063/1.4919220
Published: April 2015
View articletitled, High-performance ZnO nanowire field-effect transistor with forming gas treated SiO2 gate dielectrics
Open the PDF for High-performance ZnO nanowire field-effect transistor with forming gas treated SiO2 gate dielectrics in another window
Includes: Supplementary data