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Journal Articles

Strain relaxation of germanium-tin (GeSn) fins

Yuye Kang, Yi-Chiau Huang, Kwang Hong Lee, Shuyu Bao, Wei Wang, Dian Lei, Saeid Masudy-Panah, Yuan Dong, Ying Wu, Shengqiang Xu, Chuan Seng Tan, Xiao Gong, Yee-Chia Yeo

AIP Advances 8, 025111 (2018)

https://doi.org/10.1063/1.5012559

Published: February 2018

View article titled, Strain relaxation of germanium-tin (GeSn) fins

Journal Articles

Nanoscale metal-InGaAs contacts with ultra-low specific contact resistivity: Improved interfacial quality and extraction methodology

Saeid Masudy-Panah, Ying Wu, Dian Lei, Annie Kumar, Yee-Chia Yeo, Xiao Gong

J. Appl. Phys. 123, 024508 (2018)

https://doi.org/10.1063/1.4997686

Published: January 2018

View article titled, Nanoscale metal-InGaAs contacts with ultra-low specific contact resistivity: Improved interfacial quality and extraction methodology

Journal Articles

Thermal stability of germanium-tin (GeSn) fins

Dian Lei, Kwang Hong Lee, Shuyu Bao, Wei Wang, Saeid Masudy-Panah, Chuan Seng Tan, Eng Soon Tok, Xiao Gong, Yee-Chia Yeo

Appl. Phys. Lett. 111, 252103 (2017)

https://doi.org/10.1063/1.5006994

Published: December 2017

View article titled, Thermal stability of germanium-tin (GeSn) fins

Journal Articles

Ultra-low specific contact resistivity (1.4 × 10⁻⁹ Ω·cm²) for metal contacts on in-situ Ga-doped Ge_0.95Sn_0.05 film

Ying Wu, Sheng Luo, Wei Wang, Saeid Masudy-Panah, Dian Lei, Gengchiau Liang, Xiao Gong, Yee-Chia Yeo

J. Appl. Phys. 122, 224503 (2017)

https://doi.org/10.1063/1.5003272

Published: December 2017

View article titled, Ultra-low specific contact resistivity (1.4 × 10−9 Ω·cm2) for metal contacts on in-situ Ga-doped Ge0.95Sn0.05 film

Journal Articles

Heteroepitaxial growth of In_0.30Ga_0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

David Kohen, Xuan Sang Nguyen, Sachin Yadav, Annie Kumar, Riko I Made, Christopher Heidelberger, Xiao Gong, Kwang Hong Lee, Kenneth Eng Kian Lee, Yee Chia Yeo, Soon Fatt Yoon, Eugene A. Fitzgerald

AIP Advances 6, 085106 (2016)

https://doi.org/10.1063/1.4961025

Published: August 2016

View article titled, Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

Journal Articles

Near-bandgap optical properties of pseudomorphic GeSn alloys grown by molecular beam epitaxy

Vijay Richard D'Costa, Wei Wang, Yee-Chia Yeo

J. Appl. Phys. 120, 063104 (2016)

https://doi.org/10.1063/1.4960449

Published: August 2016

View article titled, Near-bandgap optical properties of pseudomorphic GeSn alloys grown by molecular beam epitaxy

Journal Articles

GeSn-on-insulator substrate formed by direct wafer bonding

Dian Lei, Kwang Hong Lee, Shuyu Bao, Wei Wang, Bing Wang, Xiao Gong, Chuan Seng Tan, Yee-Chia Yeo

Appl. Phys. Lett. 109, 022106 (2016)

https://doi.org/10.1063/1.4958844

Published: July 2016

View article titled, GeSn-on-insulator substrate formed by direct wafer bonding

Journal Articles

In-situ gallium-doping for forming p⁺ germanium-tin and application in germanium-tin p-i-n photodetector

Wei Wang, Saumitra Vajandar, Sin Leng Lim, Yuan Dong, Vijay Richard D'Costa, Thomas Osipowicz, Eng Soon Tok, Yee-Chia Yeo

J. Appl. Phys. 119, 155704 (2016)

https://doi.org/10.1063/1.4947116

Published: April 2016

View article titled, In-situ gallium-doping for forming p+ germanium-tin and application in germanium-tin p-i-n photodetector

Journal Articles

Temperature dependence of the dielectric function and interband transitions of pseudomorphic GeSn alloys

Vijay Richard D'Costa, Daniel Schmidt, Wei Wang, Yee-Chia Yeo

J. Vac. Sci. Technol. B 34, 041204 (2016)

https://doi.org/10.1116/1.4946759

Published: April 2016

View article titled, Temperature dependence of the dielectric function and interband transitions of pseudomorphic GeSn alloys

Journal Articles

Growth and characterization of highly tensile strained Ge₁₋_xSn_x formed on relaxed In_yGa₁₋_yP buffer layers

Wei Wang, Wan Khai Loke, Tingting Yin, Zheng Zhang, Vijay Richard D'Costa, Yuan Dong, Gengchiau Liang, Jisheng Pan, Zexiang Shen, Soon Fatt Yoon, Eng Soon Tok, Yee-Chia Yeo

J. Appl. Phys. 119, 125303 (2016)

https://doi.org/10.1063/1.4944718

Published: March 2016

View article titled, Growth and characterization of highly tensile strained Ge1−xSnx formed on relaxed InyGa1−yP buffer layers

Journal Articles

Ge_0.83Sn_0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality

Dian Lei, Wei Wang, Zheng Zhang, Jisheng Pan, Xiao Gong, Gengchiau Liang, Eng-Soon Tok, Yee-Chia Yeo

J. Appl. Phys. 119, 024502 (2016)

https://doi.org/10.1063/1.4939761

Published: January 2016

View article titled, Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality

Journal Articles

Etching of germanium-tin using ammonia peroxide mixture

Yuan Dong, Bin Leong Ong, Wei Wang, Zheng Zhang, Jisheng Pan, Xiao Gong, Eng-Soon Tok, Gengchiau Liang, Yee-Chia Yeo

J. Appl. Phys. 118, 245303 (2015)

https://doi.org/10.1063/1.4938476

Published: December 2015

View article titled, Etching of germanium-tin using ammonia peroxide mixture

Journal Articles

Parametrized dielectric functions of amorphous GeSn alloys

Vijay Richard D'Costa, Wei Wang, Daniel Schmidt, Yee-Chia Yeo

J. Appl. Phys. 118, 123102 (2015)

https://doi.org/10.1063/1.4931435

Published: September 2015

View article titled, Parametrized dielectric functions of amorphous GeSn alloys

Journal Articles

Post-growth annealing of germanium-tin alloys using pulsed excimer laser

Lanxiang Wang, Wei Wang, Qian Zhou, Jisheng Pan, Zheng Zhang, Eng Soon Tok, Yee-Chia Yeo

J. Appl. Phys. 118, 025701 (2015)

https://doi.org/10.1063/1.4926484

Published: July 2015

View article titled, Post-growth annealing of germanium-tin alloys using pulsed excimer laser

Journal Articles

Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy

Vijay Richard D'Costa, Kian Hua Tan, Bo Wen Jia, Soon Fatt Yoon, Yee-Chia Yeo

J. Appl. Phys. 117, 223106 (2015)

https://doi.org/10.1063/1.4922586

Published: June 2015

View article titled, Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy

Journal Articles

Self-assembly of tin wires via phase transformation of heteroepitaxial germanium-tin on germanium substrate

Wei Wang, Lingzi Li, Eng Soon Tok, Yee-Chia Yeo

J. Appl. Phys. 117, 225304 (2015)

https://doi.org/10.1063/1.4922423

Published: June 2015

View article titled, Self-assembly of tin wires via phase transformation of heteroepitaxial germanium-tin on germanium substrate

Journal Articles

Critical thickness for strain relaxation of Ge₁₋_xSn_x (x ≤ 0.17) grown by molecular beam epitaxy on Ge(001)

Wei Wang, Qian Zhou, Yuan Dong, Eng Soon Tok, Yee-Chia Yeo

Appl. Phys. Lett. 106, 232106 (2015)

https://doi.org/10.1063/1.4922529

Published: June 2015

View article titled, Critical thickness for strain relaxation of Ge1−xSnx (x ≤ 0.17) grown by molecular beam epitaxy on Ge(001)

Journal Articles

Influence of hydrogen surface passivation on Sn segregation, aggregation, and distribution in GeSn/Ge(001) materials

Harman Johll, Milla Samuel, Ruey Yi Koo, Hway Chuan Kang, Yee-Chia Yeo, Eng Soon Tok

J. Appl. Phys. 117, 205302 (2015)

https://doi.org/10.1063/1.4921594

Published: May 2015

View article titled, Influence of hydrogen surface passivation on Sn segregation, aggregation, and distribution in GeSn/Ge(001) materials

Journal Articles

Probing the carrier concentration profiles in phosphorus-implanted germanium using infrared spectroscopic ellipsometry

Vijay Richard D'Costa, Yee-Chia Yeo

J. Appl. Phys. 117, 073103 (2015)

https://doi.org/10.1063/1.4913299

Published: February 2015

View article titled, Probing the carrier concentration profiles in phosphorus-implanted germanium using infrared spectroscopic ellipsometry

Journal Articles

Towards simultaneous achievement of carrier activation and crystallinity in Ge and GeSn with heated phosphorus ion implantation: An optical study

Vijay Richard D'Costa, Lanxiang Wang, Wei Wang, Sin Leng Lim, Taw Kuei Chan, Lye Hing Chua, Todd Henry, Wei Zou, Christopher Hatem, Thomas Osipowicz, Eng Soon Tok, Yee-Chia Yeo

Appl. Phys. Lett. 105, 122108 (2014)

https://doi.org/10.1063/1.4896507

Published: September 2014

View article titled, Towards simultaneous achievement of carrier activation and crystallinity in Ge and GeSn with heated phosphorus ion implantation: An optical study

NARROW

Topics

Strain relaxation of germanium-tin (GeSn) fins

Nanoscale metal-InGaAs contacts with ultra-low specific contact resistivity: Improved interfacial quality and extraction methodology

Thermal stability of germanium-tin (GeSn) fins

Ultra-low specific contact resistivity (1.4 × 10⁻⁹ Ω·cm²) for metal contacts on in-situ Ga-doped Ge_0.95Sn_0.05 film

Heteroepitaxial growth of In_0.30Ga_0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

Near-bandgap optical properties of pseudomorphic GeSn alloys grown by molecular beam epitaxy

GeSn-on-insulator substrate formed by direct wafer bonding

In-situ gallium-doping for forming p⁺ germanium-tin and application in germanium-tin p-i-n photodetector

Temperature dependence of the dielectric function and interband transitions of pseudomorphic GeSn alloys

Growth and characterization of highly tensile strained Ge₁₋_xSn_x formed on relaxed In_yGa₁₋_yP buffer layers

Ge_0.83Sn_0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality

Etching of germanium-tin using ammonia peroxide mixture

Parametrized dielectric functions of amorphous GeSn alloys

Post-growth annealing of germanium-tin alloys using pulsed excimer laser

Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy

Self-assembly of tin wires via phase transformation of heteroepitaxial germanium-tin on germanium substrate

Critical thickness for strain relaxation of Ge₁₋_xSn_x (x ≤ 0.17) grown by molecular beam epitaxy on Ge(001)

Influence of hydrogen surface passivation on Sn segregation, aggregation, and distribution in GeSn/Ge(001) materials

Probing the carrier concentration profiles in phosphorus-implanted germanium using infrared spectroscopic ellipsometry

Towards simultaneous achievement of carrier activation and crystallinity in Ge and GeSn with heated phosphorus ion implantation: An optical study

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