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Journal Articles

Interface chemistry of pristine TiN/La: Hf 0.5 Zr 0.5 O 2 capacitors

W. Hamouda, C. Lubin, S. Ueda, Y. Yamashita, O. Renault, F. Mehmood, T. Mikolajick, U. Schroeder, R. Negrea, N. Barrett

Appl. Phys. Lett. 116, 252903 (2020)

https://doi.org/10.1063/5.0012595

Published: June 2020

View article titled, Interface chemistry of pristine TiN/La: Hf 0.5 Zr 0.5 O 2 capacitors

Includes: Supplementary data

Journal Articles

Numerical investigation of plasma properties for the microwave discharge ion thruster μ10 using PIC-MCC simulation

Y. Yamashita, Y. Tani, R. Tsukizaki, D. Koda, K. Nishiyama

Phys. Plasmas 26, 073510 (2019)

https://doi.org/10.1063/1.5097661

Published: July 2019

View article titled, Numerical investigation of plasma properties for the microwave discharge ion thruster μ10 using PIC-MCC simulation

Journal Articles

Quantitative determination of elemental diffusion from deeply buried layers by photoelectron spectroscopy

C. Zborowski, O. Renault, A. Torres, C. Guedj, Y. Yamashita, S. Ueda, G. Grenet, S. Tougaard

J. Appl. Phys. 124, 085115 (2018)

https://doi.org/10.1063/1.5033453

Published: August 2018

View article titled, Quantitative determination of elemental diffusion from deeply buried layers by photoelectron spectroscopy

Journal Articles

GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga₂O₃ substrate for UV vertical light emitting devices

I. A. Ajia, Y. Yamashita, K. Lorenz, M. M. Muhammed, L. Spasevski, D. Almalawi, J. Xu, K. Iizuka, Y. Morishima, D. H. Anjum, N. Wei, R. W. Martin, A. Kuramata, I. S. Roqan

Appl. Phys. Lett. 113, 082102 (2018)

https://doi.org/10.1063/1.5025178

Published: August 2018

View article titled, GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices

Includes: Supplementary data

Journal Articles

Electronic structure of the polymer-cathode interface of an organic electroluminescent device investigated using operando hard x-ray photoelectron spectroscopy

J. Ikeuchi, H. Hamamatsu, T. Miyamoto, S. Tanaka, Y. Yamashita, H. Yoshikawa, S. Ueda

J. Appl. Phys. 118, 085308 (2015)

https://doi.org/10.1063/1.4929448

Published: August 2015

View article titled, Electronic structure of the polymer-cathode interface of an organic electroluminescent device investigated using operando hard x-ray photoelectron spectroscopy

Journal Articles

High optical and structural quality of GaN epilayers grown on ( 2 ¯ 01 ) β-Ga₂O₃

M. M. Muhammed, M. Peres, Y. Yamashita, Y. Morishima, S. Sato, N. Franco, K. Lorenz, A. Kuramata, I. S. Roqan

Appl. Phys. Lett. 105, 042112 (2014)

https://doi.org/10.1063/1.4891761

Published: July 2014

View article titled, High optical and structural quality of GaN epilayers grown on ( 2 ¯ 01 ) β-Ga2O3

Journal Articles

Direct observation of bias-dependence potential distribution in metal/HfO₂ gate stack structures by hard x-ray photoelectron spectroscopy under device operation

Y. Yamashita, H. Yoshikawa, T. Chikyo, K. Kobayashi

J. Appl. Phys. 115, 043721 (2014)

https://doi.org/10.1063/1.4863637

Published: January 2014

View article titled, Direct observation of bias-dependence potential distribution in metal/HfO2 gate stack structures by hard x-ray photoelectron spectroscopy under device operation

Journal Articles

Impact of Mg concentration on energy-band-depth profile of Mg-doped InN epilayers analyzed by hard X-ray photoelectron spectroscopy

M. Imura, S. Tsuda, T. Nagata, H. Takeda, M. Y. Liao, A. L. Yang, Y. Yamashita, H. Yoshikawa, Y. Koide, K. Kobayashi, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, Y. Nanishi

Appl. Phys. Lett. 103, 162110 (2013)

https://doi.org/10.1063/1.4826094

Published: October 2013

View article titled, Impact of Mg concentration on energy-band-depth profile of Mg-doped InN epilayers analyzed by hard X-ray photoelectron spectroscopy

Journal Articles

Photoelectron spectroscopic study of band alignment of polymer/ZnO photovoltaic device structure

T. Nagata, S. Oh, Y. Yamashita, H. Yoshikawa, N. Ikeno, K. Kobayashi, T. Chikyow, Y. Wakayama

Appl. Phys. Lett. 102, 043302 (2013)

https://doi.org/10.1063/1.4790298

Published: January 2013

View article titled, Photoelectron spectroscopic study of band alignment of polymer/ZnO photovoltaic device structure

Journal Articles

Investigation of the near-surface structures of polar InN films by chemical-state-discriminated hard X-ray photoelectron diffraction

A. L. Yang, Y. Yamashita, M. Kobata, T. Matsushita, H. Yoshikawa, I. Píš, M. Imura, T. Yamaguchi, O. Sakata, Y. Nanishi, K. Kobayashi

Appl. Phys. Lett. 102, 031914 (2013)

https://doi.org/10.1063/1.4789373

Published: January 2013

View article titled, Investigation of the near-surface structures of polar InN films by chemical-state-discriminated hard X-ray photoelectron diffraction

Journal Articles

Chemical effect of Si⁺ ions on the implantation-induced defects in ZnO studied by a slow positron beam

M. Jiang, D. D. Wang, Z. Q. Chen, S. Kimura, Y. Yamashita, A. Mori, A. Uedono

J. Appl. Phys. 113, 043506 (2013)

https://doi.org/10.1063/1.4789010

Published: January 2013

View article titled, Chemical effect of Si+ ions on the implantation-induced defects in ZnO studied by a slow positron beam

Journal Articles

Publisher's Note: “Observation of boron diffusion in an annealed Ta/CoFeB/MgO magnetic tunnel junction with standing-wave hard x-ray photoemission” [Appl. Phys. Lett. 101, 202402 (2012)]

A. A. Greer, A. X. Gray, S. Kanai, A. M. Kaiser, S. Ueda, Y. Yamashita, C. Bordel, G. Palsson, N. Maejima, S.-H. Yang, G. Conti, K. Kobayashi, S. Ikeda, F. Matsukura, H. Ohno, C. M. Schneider, J. B. Kortright, F. Hellman, C. S. Fadley

Appl. Phys. Lett. 102, 019901 (2013)

https://doi.org/10.1063/1.4773064

Published: January 2013

View article titled, Publisher's Note: “Observation of boron diffusion in an annealed Ta/CoFeB/MgO magnetic tunnel junction with standing-wave hard x-ray photoemission” [Appl. Phys. Lett. 101, 202402 (2012)]

Journal Articles

Nondestructive characterization of a TiN metal gate: Chemical and structural properties by means of standing-wave hard x-ray photoemission spectroscopy

C. Papp, G. Conti, B. Balke, S. Ueda, Y. Yamashita, H. Yoshikawa, Y. S. Uritsky, K. Kobayashi, C. S. Fadley

J. Appl. Phys. 112, 114501 (2012)

https://doi.org/10.1063/1.4765720

Published: December 2012

View article titled, Nondestructive characterization of a TiN metal gate: Chemical and structural properties by means of standing-wave hard x-ray photoemission spectroscopy

Journal Articles

Observation of boron diffusion in an annealed Ta/CoFeB/MgO magnetic tunnel junction with standing-wave hard x-ray photoemission

Appl. Phys. Lett. 101, 202402 (2012)

https://doi.org/10.1063/1.4766351

Published: November 2012

View article titled, Observation of boron diffusion in an annealed Ta/CoFeB/MgO magnetic tunnel junction with standing-wave hard x-ray photoemission

Journal Articles

Hard x-ray photoelectron spectroscopy study on band alignment at poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/ZnO interface

T. Nagata, S. Oh, Y. Yamashita, H. Yoshikawa, R. Hayakawa, K. Kobayashi, T. Chikyow, Y. Wakayama

Appl. Phys. Lett. 101, 173303 (2012)

https://doi.org/10.1063/1.4762834

Published: October 2012

View article titled, Hard x-ray photoelectron spectroscopy study on band alignment at poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/ZnO interface

Journal Articles

Electronic structure of delta-doped La:SrTiO₃ layers by hard x-ray photoelectron spectroscopy

A. M. Kaiser, A. X. Gray, G. Conti, B. Jalan, A. P. Kajdos, A. Gloskovskii, S. Ueda, Y. Yamashita, K. Kobayashi, W. Drube, S. Stemmer, C. S. Fadley

Appl. Phys. Lett. 100, 261603 (2012)

https://doi.org/10.1063/1.4731642

Published: June 2012

View article titled, Electronic structure of delta-doped La:SrTiO3 layers by hard x-ray photoelectron spectroscopy

Journal Articles

Sulfur-mediated palladium catalyst immobilized on a GaAs surface

M. Shimoda, T. Konishi, N. Nishiwaki, Y. Yamashita, H. Yoshikawa

J. Appl. Phys. 111, 124908 (2012)

https://doi.org/10.1063/1.4730377

Published: June 2012

View article titled, Sulfur-mediated palladium catalyst immobilized on a GaAs surface

Journal Articles

Vacancy clustering and its dissociation process in electroless deposited copper films studied by monoenergetic positron beams

A. Uedono, Y. Yamashita, T. Tsutsui, Y. Dordi, S. Li, N. Oshima, R. Suzuki

J. Appl. Phys. 111, 104506 (2012)

https://doi.org/10.1063/1.4719965

Published: May 2012

View article titled, Vacancy clustering and its dissociation process in electroless deposited copper films studied by monoenergetic positron beams

Journal Articles

Band bending and surface defects in β-Ga₂O₃

T. C. Lovejoy, Renyu Chen, X. Zheng, E. G. Villora, K. Shimamura, H. Yoshikawa, Y. Yamashita, S. Ueda, K. Kobayashi, S. T. Dunham, F. S. Ohuchi, M. A. Olmstead

Appl. Phys. Lett. 100, 181602 (2012)

https://doi.org/10.1063/1.4711014

Published: May 2012

View article titled, Band bending and surface defects in β-Ga2O3

Journal Articles

Bias application hard x-ray photoelectron spectroscopy study of forming process of Cu/HfO₂/Pt resistive random access memory structure

T. Nagata, M. Haemori, Y. Yamashita, H. Yoshikawa, Y. Iwashita, K. Kobayashi, T. Chikyow

Appl. Phys. Lett. 99, 223517 (2011)

https://doi.org/10.1063/1.3664781

Published: December 2011

View article titled, Bias application hard x-ray photoelectron spectroscopy study of forming process of Cu/HfO2/Pt resistive random access memory structure

NARROW

Topics

Interface chemistry of pristine TiN/La: Hf 0.5 Zr 0.5 O 2 capacitors

Numerical investigation of plasma properties for the microwave discharge ion thruster μ10 using PIC-MCC simulation

Quantitative determination of elemental diffusion from deeply buried layers by photoelectron spectroscopy

GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga₂O₃ substrate for UV vertical light emitting devices

Electronic structure of the polymer-cathode interface of an organic electroluminescent device investigated using operando hard x-ray photoelectron spectroscopy

High optical and structural quality of GaN epilayers grown on ( 2 ¯ 01 ) β-Ga₂O₃

Direct observation of bias-dependence potential distribution in metal/HfO₂ gate stack structures by hard x-ray photoelectron spectroscopy under device operation

Impact of Mg concentration on energy-band-depth profile of Mg-doped InN epilayers analyzed by hard X-ray photoelectron spectroscopy

Photoelectron spectroscopic study of band alignment of polymer/ZnO photovoltaic device structure

Investigation of the near-surface structures of polar InN films by chemical-state-discriminated hard X-ray photoelectron diffraction

Chemical effect of Si⁺ ions on the implantation-induced defects in ZnO studied by a slow positron beam

Publisher's Note: “Observation of boron diffusion in an annealed Ta/CoFeB/MgO magnetic tunnel junction with standing-wave hard x-ray photoemission” [Appl. Phys. Lett. 101, 202402 (2012)]

Nondestructive characterization of a TiN metal gate: Chemical and structural properties by means of standing-wave hard x-ray photoemission spectroscopy

Observation of boron diffusion in an annealed Ta/CoFeB/MgO magnetic tunnel junction with standing-wave hard x-ray photoemission

Hard x-ray photoelectron spectroscopy study on band alignment at poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/ZnO interface

Electronic structure of delta-doped La:SrTiO₃ layers by hard x-ray photoelectron spectroscopy

Sulfur-mediated palladium catalyst immobilized on a GaAs surface

Vacancy clustering and its dissociation process in electroless deposited copper films studied by monoenergetic positron beams

Band bending and surface defects in β-Ga₂O₃

Bias application hard x-ray photoelectron spectroscopy study of forming process of Cu/HfO₂/Pt resistive random access memory structure

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