1-14 of 14
Y. Wakayama
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Emergence of electrochemical catalytic activity via an electrochemical-probe on defective transition metal dichalcogenide nanosheets

Open Access
A. Kumatani, H. Ogawa, T. Endo, J. Lustikova, H. Ida, Y. Takahashi, Y. Miyata, Y. Ikuhara, H. Shiku, Y. Wakayama
Journal: APL Energy
APL Energy 2, 016107 (2024)
https://doi.org/10.1063/5.0175653
Published: February 2024
View article titled, Emergence of electrochemical catalytic activity via an electrochemical-probe on defective transition metal dichalcogenide nanosheets
Open the PDF for Emergence of electrochemical catalytic activity via an electrochemical-probe on defective transition metal dichalcogenide nanosheets in another window
Includes: Supplementary data
Journal Articles

Low-frequency noise in hBN/MoS2/hBN transistor at cryogenic temperatures toward low-noise cryo-CMOS device applications

Available to Purchase
S. Nakaharai, T. Arakawa, A. Zulkefli, T. Iwasaki, K. Watanabe, T. Taniguchi, Y. Wakayama
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 262102 (2023)
https://doi.org/10.1063/5.0152475
Published: June 2023
View article titled, Low-frequency noise in hBN/MoS2/hBN transistor at cryogenic temperatures toward low-noise cryo-CMOS device applications
Open the PDF for Low-frequency noise in hBN/MoS2/hBN transistor at cryogenic temperatures toward low-noise cryo-CMOS device applications in another window
Includes: Supplementary data
Journal Articles

Carrier transport properties of MoS2 field-effect transistors produced by multi-step chemical vapor deposition method

Available to Purchase
S. Heo, R. Hayakawa, Y. Wakayama
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 024301 (2017)
https://doi.org/10.1063/1.4973491
Published: January 2017
View article titled, Carrier transport properties of MoS2 field-effect transistors produced by multi-step chemical vapor deposition method
Open the PDF for Carrier transport properties of MoS2 field-effect transistors produced by multi-step chemical vapor deposition method in another window
Includes: Supplementary data
Journal Articles

Perspective: Highly ordered MoS2 thin films grown by multi-step chemical vapor deposition process

Open Access
S. N. Heo, Y. Ishiguro, R. Hayakawa, T. Chikyow, Y. Wakayama
Journal: APL Materials
APL Mater. 4, 030901 (2016)
https://doi.org/10.1063/1.4943288
Published: March 2016
View article titled, Perspective: Highly ordered MoS2 thin films grown by multi-step chemical vapor deposition process
Open the PDF for Perspective: Highly ordered MoS2 thin films grown by multi-step chemical vapor deposition process in another window
Journal Articles

Photoelectron spectroscopic study of band alignment of polymer/ZnO photovoltaic device structure

Available to Purchase
T. Nagata, S. Oh, Y. Yamashita, H. Yoshikawa, N. Ikeno, K. Kobayashi, T. Chikyow, Y. Wakayama
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 043302 (2013)
https://doi.org/10.1063/1.4790298
Published: January 2013
View article titled, Photoelectron spectroscopic study of band alignment of polymer/ZnO photovoltaic device structure
Open the PDF for Photoelectron spectroscopic study of band alignment of polymer/ZnO photovoltaic device structure in another window
Journal Articles

Hard x-ray photoelectron spectroscopy study on band alignment at poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/ZnO interface

Available to Purchase
T. Nagata, S. Oh, Y. Yamashita, H. Yoshikawa, R. Hayakawa, K. Kobayashi, T. Chikyow, Y. Wakayama
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 173303 (2012)
https://doi.org/10.1063/1.4762834
Published: October 2012
View article titled, Hard x-ray photoelectron spectroscopy study on band alignment at poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/ZnO interface
Open the PDF for Hard x-ray photoelectron spectroscopy study on band alignment at poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/ZnO interface in another window
Journal Articles

Copper-phthalocyanine based metal–organic interfaces: The effect of fluorination, the substrate, and its symmetry

Available to Purchase
D. G. de Oteyza, A. El-Sayed, J. M. Garcia-Lastra, E. Goiri, T. N. Krauss, A. Turak, E. Barrena, H. Dosch, J. Zegenhagen, A. Rubio, Y. Wakayama, J. E. Ortega
Journal: The Journal of Chemical Physics
J. Chem. Phys. 133, 214703 (2010)
https://doi.org/10.1063/1.3509394
Published: December 2010
View article titled, Copper-phthalocyanine based metal–organic interfaces: The effect of fluorination, the substrate, and its symmetry
Open the PDF for Copper-phthalocyanine based metal–organic interfaces: The effect of fluorination, the substrate, and its symmetry in another window
Journal Articles

Switching operation of lasing wavelength in mid-infrared ridge-waveguide quantum cascade lasers coupled with microcylindrical cavity

Available to Purchase
Y. Wakayama, S. Iwamoto, Y. Arakawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 171104 (2010)
https://doi.org/10.1063/1.3413949
Published: April 2010
View article titled, Switching operation of lasing wavelength in mid-infrared ridge-waveguide quantum cascade lasers coupled with microcylindrical cavity
Open the PDF for Switching operation of lasing wavelength in mid-infrared ridge-waveguide quantum cascade lasers coupled with microcylindrical cavity in another window
Journal Articles

Origin of negative differential resistance in molecular junctions of Rose Bengal

Available to Purchase
Anirban Bandyopadhyay, Y. Wakayama
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 023512 (2007)
https://doi.org/10.1063/1.2430767
Published: January 2007
View article titled, Origin of negative differential resistance in molecular junctions of Rose Bengal
Open the PDF for Origin of negative differential resistance in molecular junctions of Rose Bengal in another window
Includes: Supplementary data
Journal Articles

Writing and erasing information in multilevel logic systems of a single molecule using scanning tunneling microscope

Available to Purchase
Anirban Bandyopadhyay, K. Miki, Y. Wakayama
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 243506 (2006)
https://doi.org/10.1063/1.2402895
Published: December 2006
View article titled, Writing and erasing information in multilevel logic systems of a single molecule using scanning tunneling microscope
Open the PDF for Writing and erasing information in multilevel logic systems of a single molecule using scanning tunneling microscope in another window
Journal Articles

Optical switching of single-electron tunneling in SiO 2 ∕ molecule ∕ SiO 2 multilayer on Si ( 100 )

Available to Purchase
Y. Wakayama, K. Ogawa, T. Kubota, H. Suzuki, T. Kamikado, S. Mashiko
Journal: Applied Physics Letters
Appl. Phys. Lett. 85, 329–331 (2004)
https://doi.org/10.1063/1.1772867
Published: July 2004
View article titled, Optical switching of single-electron tunneling in SiO 2 ∕ molecule ∕ SiO 2 multilayer on Si ( 100 )
Open the PDF for Optical switching of single-electron tunneling in SiO 2 ∕ molecule ∕ SiO 2 multilayer on Si ( 100 ) in another window
Journal Articles

Molecular Coulomb islands for single-electron tunneling in SiO 2 /molecular layer/ SiO 2 multilayers on Si(100)

Available to Purchase
Y. Wakayama, T. Kubota, H. Suzuki, T. Kamikado, S. Mashiko
Journal: Journal of Applied Physics
J. Appl. Phys. 94, 4711–4713 (2003)
https://doi.org/10.1063/1.1605249
Published: October 2003
View article titled, Molecular Coulomb islands for single-electron tunneling in SiO 2 /molecular layer/ SiO 2 multilayers on Si(100)
Open the PDF for Molecular Coulomb islands for single-electron tunneling in SiO 2 /molecular layer/ SiO 2 multilayers on Si(100) in another window
Journal Articles

Stabilization and fine control of Ge dot structure on Si (100) by C cover layer

Available to Purchase
Y. Wakayama, L. V. Sokolov, N. Zakharov, P. Werner, U. Gösele
Journal: Journal of Applied Physics
J. Appl. Phys. 93, 765–767 (2003)
https://doi.org/10.1063/1.1527205
Published: January 2003
View article titled, Stabilization and fine control of Ge dot structure on Si (100) by C cover layer
Open the PDF for Stabilization and fine control of Ge dot structure on Si (100) by C cover layer in another window
Journal Articles

Optical properties of Si clusters and Si nanocrystallites in high-temperature annealed SiO x films

Available to Purchase
T. Inokuma, Y. Wakayama, T. Muramoto, R. Aoki, Y. Kurata, S. Hasegawa
Journal: Journal of Applied Physics
J. Appl. Phys. 83, 2228–2234 (1998)
https://doi.org/10.1063/1.366961
Published: February 1998
View article titled, Optical properties of Si clusters and Si nanocrystallites in high-temperature annealed SiO x films
Open the PDF for Optical properties of Si clusters and Si nanocrystallites in high-temperature annealed SiO x films in another window