Page 1 | Search Results | AIP Publishing

1-15 of 15

Sort by

Sort Order Select

Journal Articles

Design and fabrication of optical thin films for remote sensing instruments

C. N. Hsiao, H. P. Chen, P. K. Chiu, W. H. Cho, Y. W. Lin, F. Z. Chen, D. P. Tsai

J. Vac. Sci. Technol. A 28, 867–872 (2010)

https://doi.org/10.1116/1.3453700

Published: June 2010

View articletitled, Design and fabrication of optical thin films for remote sensing instruments

Journal Articles

Electromigration in flip chip solder joints under extra high current density

Y. W. Lin, J. H. Ke, H. Y. Chuang, Y. S. Lai, C. R. Kao

J. Appl. Phys. 107, 073516 (2010)

https://doi.org/10.1063/1.3371711

Published: April 2010

View articletitled, Electromigration in flip chip solder joints under extra high current density

Journal Articles

Photoluminescence properties of a GaN 0.015 As 0.985 /GaAs single quantum well under short pulse excitation

X. D. Luo, Z. Y. Xu, W. K. Ge, Z. Pan, L. H. Li, Y. W. Lin

Appl. Phys. Lett. 79, 958–960 (2001)

https://doi.org/10.1063/1.1390484

Published: August 2001

View articletitled, Photoluminescence properties of a GaN 0.015 As 0.985 /GaAs single quantum well under short pulse excitation

Journal Articles

Effects of rapid thermal annealing and SiO 2 encapsulation on GaNAs/GaAs single quantum wells grown by plasma-assisted molecular-beam epitaxy

L. H. Li, Z. Pan, Y. Q. Xu, Y. Du, Y. W. Lin, R. H. Wu

Appl. Phys. Lett. 78, 2488–2490 (2001)

https://doi.org/10.1063/1.1367276

Published: April 2001

View articletitled, Effects of rapid thermal annealing and SiO 2 encapsulation on GaNAs/GaAs single quantum wells grown by plasma-assisted molecular-beam epitaxy

Journal Articles

Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration

Z. Pan, L. H. Li, Y. W. Lin, B. Q. Sun, D. S. Jiang, W. K. Ge

Appl. Phys. Lett. 78, 2217–2219 (2001)

https://doi.org/10.1063/1.1362335

Published: April 2001

View articletitled, Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration

Journal Articles

Effect of rapid thermal annealing on GaInNAs/GaAs quantum wells grown by plasma-assisted molecular-beam epitaxy

Z. Pan, L. H. Li, W. Zhang, Y. W. Lin, R. H. Wu, W. Ge

Appl. Phys. Lett. 77, 1280–1282 (2000)

https://doi.org/10.1063/1.1289916

Published: August 2000

View articletitled, Effect of rapid thermal annealing on GaInNAs/GaAs quantum wells grown by plasma-assisted molecular-beam epitaxy

Journal Articles

Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy

Z. Pan, L. H. Li, W. Zhang, Y. W. Lin, R. H. Wu

Appl. Phys. Lett. 77, 214–216 (2000)

https://doi.org/10.1063/1.126928

Published: July 2000

View articletitled, Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy

Journal Articles

Effects of rapid thermal annealing on the optical properties of GaN x As 1−x / GaAs single quantum well structure grown by molecular beam epitaxy

L. H. Li, Z. Pan, W. Zhang, Y. W. Lin, Z. Q. Zhou, R. H. Wu

J. Appl. Phys. 87, 245–248 (2000)

https://doi.org/10.1063/1.371852

Published: January 2000

View articletitled, Effects of rapid thermal annealing on the optical properties of GaN x As 1−x / GaAs single quantum well structure grown by molecular beam epitaxy

Journal Articles

Strain relaxation of GaN x As 1−x on GaAs (001) grown by molecular-beam epitaxy

Z. Pan, Y. T. Wang, L. H. Li, H. Wang, Z. Wei, Z. Q. Zhou, Y. W. Lin

J. Appl. Phys. 86, 5302–5304 (1999)

https://doi.org/10.1063/1.371516

Published: November 1999

View articletitled, Strain relaxation of GaN x As 1−x on GaAs (001) grown by molecular-beam epitaxy

Journal Articles

Investigation of periodicity fluctuations in strained ( GaNAs) 1 ( GaAs) m superlattices by the kinematical simulation of x-ray diffraction

Z. Pan, Y. T. Wang, Y. Zhuang, Y. W. Lin, Z. Q. Zhou, L. H. Li, R. H. Wu, Q. M. Wang

Appl. Phys. Lett. 75, 223–225 (1999)

https://doi.org/10.1063/1.124329

Published: July 1999

View articletitled, Investigation of periodicity fluctuations in strained ( GaNAs) 1 ( GaAs) m superlattices by the kinematical simulation of x-ray diffraction

Journal Articles

Residual strain analysis of In_xGa₁₋_xAs/GaAs heteroepitaxial layers

V. Krishnamoorthy, Y. W. Lin, L. Calhoun, H. L. Liu, R. M. Park

Appl. Phys. Lett. 61, 2680–2682 (1992)

https://doi.org/10.1063/1.108107

Published: November 1992

View articletitled, Residual strain analysis of InxGa1−xAs/GaAs heteroepitaxial layers

Journal Articles

Application of ‘‘critical compositional difference’’ concept to the growth of low dislocation density (<10⁴/cm²) In_xGa_1−xAs (x≤0.5) on GaAs

V. Krishnamoorthy, Y. W. Lin, R. M. Park

J. Appl. Phys. 72, 1752–1757 (1992)

https://doi.org/10.1063/1.351699

Published: September 1992

View articletitled, Application of ‘‘critical compositional difference’’ concept to the growth of low dislocation density (<104/cm2) InxGa1−xAs (x≤0.5) on GaAs

Journal Articles

Uniform, high‐gain AlGaAs/InGaAs/GaAs heteroemitter bipolar transistors using chemical passivation and nonalloyed ohmic contacts

H. C. Tseng, S. S. Li, Y. W. Lin, R. M. Park

Appl. Phys. Lett. 60, 383–385 (1992)

https://doi.org/10.1063/1.106664

Published: January 1992

View articletitled, Uniform, high‐gain AlGaAs/InGaAs/GaAs heteroemitter bipolar transistors using chemical passivation and nonalloyed ohmic contacts

Journal Articles

Low dark current, planar In_0.4Ga_0.6As p‐i‐n photodiode prepared by molecular beam epitaxy growth on GaAs

Y. C. Tzeng, S. S. Li, Y. W. Lin, P. Ribas, R. M. Park

Appl. Phys. Lett. 58, 2396–2398 (1991)

https://doi.org/10.1063/1.104882

Published: May 1991

View articletitled, Low dark current, planar In0.4Ga0.6As p‐i‐n photodiode prepared by molecular beam epitaxy growth on GaAs

Journal Articles

Mixed quantum model for gas–solid energy transfer

Y.‐W. Lin, S. A. Adelman

J. Chem. Phys. 68, 9–12 (1978)

https://doi.org/10.1063/1.435478

Published: January 1978

View articletitled, Mixed quantum model for gas–solid energy transfer

Update search

NARROW

Format

Topics

Journal

Article Type

Issue Section

Date

Availability

Design and fabrication of optical thin films for remote sensing instruments

Electromigration in flip chip solder joints under extra high current density

Photoluminescence properties of a GaN 0.015 As 0.985 /GaAs single quantum well under short pulse excitation

Effects of rapid thermal annealing and SiO 2 encapsulation on GaNAs/GaAs single quantum wells grown by plasma-assisted molecular-beam epitaxy

Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration

Effect of rapid thermal annealing on GaInNAs/GaAs quantum wells grown by plasma-assisted molecular-beam epitaxy

Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy

Effects of rapid thermal annealing on the optical properties of GaN x As 1−x / GaAs single quantum well structure grown by molecular beam epitaxy

Strain relaxation of GaN x As 1−x on GaAs (001) grown by molecular-beam epitaxy

Investigation of periodicity fluctuations in strained ( GaNAs) 1 ( GaAs) m superlattices by the kinematical simulation of x-ray diffraction

Residual strain analysis of In_xGa₁₋_xAs/GaAs heteroepitaxial layers

Application of ‘‘critical compositional difference’’ concept to the growth of low dislocation density (<10⁴/cm²) In_xGa_1−xAs (x≤0.5) on GaAs

Uniform, high‐gain AlGaAs/InGaAs/GaAs heteroemitter bipolar transistors using chemical passivation and nonalloyed ohmic contacts

Low dark current, planar In_0.4Ga_0.6As p‐i‐n photodiode prepared by molecular beam epitaxy growth on GaAs

Mixed quantum model for gas–solid energy transfer

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Update search

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only