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Journal Articles

Homojunction p-n photodiodes based on As-doped single ZnO nanowire

H. D. Cho, A. S. Zakirov, Sh. U. Yuldashev, C. W. Ahn, Y. K. Yeo, Т. W. Kang

AIP Conf. Proc. 1566, 51–52 (2013)

https://doi.org/10.1063/1.4848280

Published: December 2013

View article titled, Homojunction p-n photodiodes based on As-doped single ZnO nanowire

Journal Articles

Temperature-dependent photoluminescence of Ge/Si and Ge_1-ySn_y/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content

Mee-Yi Ryu, Tom R. Harris, Y. K. Yeo, R. T. Beeler, J. Kouvetakis

Appl. Phys. Lett. 102, 171908 (2013)

https://doi.org/10.1063/1.4803927

Published: May 2013

View article titled, Temperature-dependent photoluminescence of Ge/Si and Ge1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content

Journal Articles

Degenerate parallel conducting layer and conductivity type conversion observed from p-Ge_1−ySn_y (y = 0.06%) grown on n-Si substrate

Mee-Yi Ryu, Y. K. Yeo, M. Ahoujja, Tom Harris, Richard Beeler, John Kouvetakis

Appl. Phys. Lett. 101, 131110 (2012)

https://doi.org/10.1063/1.4754625

Published: September 2012

View article titled, Degenerate parallel conducting layer and conductivity type conversion observed from p-Ge1−ySny (y = 0.06%) grown on n-Si substrate

Journal Articles

High electrical activation efficiency obtained from Si-implanted Al 0.18 Ga 0.82 N

Mee-Yi Ryu, Y. K. Yeo, M. A. Marciniak, R. L. Hengehold, T. D. Steiner

J. Appl. Phys. 96, 6277–6280 (2004)

https://doi.org/10.1063/1.1813618

Published: December 2004

View article titled, High electrical activation efficiency obtained from Si-implanted Al 0.18 Ga 0.82 N

Journal Articles

Electrical activation studies of GaN implanted with Si from low to high dose

James A. Fellows, Y. K. Yeo, R. L. Hengehold, D. K. Johnstone

Appl. Phys. Lett. 80, 1930–1932 (2002)

https://doi.org/10.1063/1.1458694

Published: March 2002

View article titled, Electrical activation studies of GaN implanted with Si from low to high dose

Journal Articles

Temperature-dependent Hall measurements of molecular beam epitaxial grown Si-doped Al x Ga 1−x N for Al mole fraction up to 0.5

M. Ahoujja, Y. K. Yeo, R. L. Hengehold, J. E. Van Nostrand

Appl. Phys. Lett. 80, 1382–1384 (2002)

https://doi.org/10.1063/1.1452795

Published: February 2002

View article titled, Temperature-dependent Hall measurements of molecular beam epitaxial grown Si-doped Al x Ga 1−x N for Al mole fraction up to 0.5

Journal Articles

Electrical properties of boron-doped p– SiGeC grown on n − – Si substrate

M. Ahoujja, Y. K. Yeo, R. L. Hengehold, G. S. Pomrenke, D. C. Look, Jim Huffman

Appl. Phys. Lett. 77, 1327–1329 (2000)

https://doi.org/10.1063/1.1290047

Published: August 2000

View article titled, Electrical properties of boron-doped p– SiGeC grown on n − – Si substrate

Journal Articles

Control of surface states in GaSb/Al x Ga 1−x As y Sb 1−y / Ga x In 1−x Sb/Al x Ga 1−x As y Sb 1−y quantum well structures

D. K. Johnstone, Y. K. Yeo, R. L. Hengehold, G. W. Turner

Appl. Phys. Lett. 75, 2779–2781 (1999)

https://doi.org/10.1063/1.125147

Published: November 1999

View article titled, Control of surface states in GaSb/Al x Ga 1−x As y Sb 1−y / Ga x In 1−x Sb/Al x Ga 1−x As y Sb 1−y quantum well structures

Journal Articles

Recombination dynamics in InAsSb quantum-well diode lasers measured using photoluminescence upconversion

W. T. Cooley, R. L. Hengehold, Y. K. Yeo, G. W. Turner, J. P. Loehr

Appl. Phys. Lett. 73, 2890–2892 (1998)

https://doi.org/10.1063/1.122620

Published: November 1998

View article titled, Recombination dynamics in InAsSb quantum-well diode lasers measured using photoluminescence upconversion

Journal Articles

Optical characterization of molecular beam epitaxially grown InAsSb nearly lattice matched to GaSb

M. A. Marciniak, R. L. Hengehold, Y. K. Yeo, G. W. Turner

J. Appl. Phys. 84, 480–488 (1998)

https://doi.org/10.1063/1.368051

Published: July 1998

View article titled, Optical characterization of molecular beam epitaxially grown InAsSb nearly lattice matched to GaSb

Journal Articles

Deep level capture barrier in molecular beam epitaxial grown AlAs y Sb 1−y measured by isothermal capacitance transient spectroscopy

D. K. Johnstone, Y. K. Yeo, R. L. Hengehold, G. W. Turner

Appl. Phys. Lett. 71, 506–508 (1997)

https://doi.org/10.1063/1.119592

Published: July 1997

View article titled, Deep level capture barrier in molecular beam epitaxial grown AlAs y Sb 1−y measured by isothermal capacitance transient spectroscopy

Journal Articles

Junction characteristics of electron-irradiated Ga 0.5 In 0.5 P n + -p diodes and solar cells

K. C. Reinhardt, Y. K. Yeo, P. H. Ostdiek, R. L. Hengehold

J. Appl. Phys. 81, 3700–3706 (1997)

https://doi.org/10.1063/1.365491

Published: April 1997

View article titled, Junction characteristics of electron-irradiated Ga 0.5 In 0.5 P n + -p diodes and solar cells

Journal Articles

Photoluminescence study of p -type CdGeAs 2 ordered semiconductor crystals

J. E. McCrae, R. L. Hengehold, Y. K. Yeo, M. C. Ohmer, P. G. Schunemann

Appl. Phys. Lett. 70, 455–457 (1997)

https://doi.org/10.1063/1.118179

Published: January 1997

View article titled, Photoluminescence study of p -type CdGeAs 2 ordered semiconductor crystals

Journal Articles

Junction characteristics of Ga_0.5In_0.5P n⁺p diodes and solar cells

K. C. Reinhardt, Y. K. Yeo, R. L. Hengehold

J. Appl. Phys. 77, 5763–5772 (1995)

https://doi.org/10.1063/1.359221

Published: June 1995

View article titled, Junction characteristics of Ga0.5In0.5P n+p diodes and solar cells

Journal Articles

Si_1−xGe_x/Si multiple quantum wells on Si(100) and Si(110) for infrared absorption

T. L. Kreifels, R. L. Hengehold, Y. K. Yeo, P. E. Thompson, D. S. Simons

J. Vac. Sci. Technol. A 13, 636–641 (1995)

https://doi.org/10.1116/1.579798

Published: May 1995

View article titled, Si1−xGex/Si multiple quantum wells on Si(100) and Si(110) for infrared absorption

Journal Articles

Er‐related deep centers in GaAs doped with Er by ion implantation and molecular beam epitaxy

D. W. Elsaesser, Y. K. Yeo, R. L. Hengehold, K. R. Evans, F. L. Pedrotti

J. Appl. Phys. 77, 3919–3926 (1995)

https://doi.org/10.1063/1.358571

Published: April 1995

View article titled, Er‐related deep centers in GaAs doped with Er by ion implantation and molecular beam epitaxy

Journal Articles

Polarized luminescence study of ordered nonlinear optical material ZnGeP₂

J. E. McCrae, Jr., M. R. Gregg, R. L. Hengehold, Y. K. Yeo, P. H. Ostdiek, M. C. Ohmer, P. G. Schunemann, T. M. Pollak

Appl. Phys. Lett. 64, 3142–3144 (1994)

https://doi.org/10.1063/1.111345

Published: June 1994

View article titled, Polarized luminescence study of ordered nonlinear optical material ZnGeP2

Journal Articles

Enhancement of the Er³⁺ emissions from AlGaAs:Er codoped with oxygen

J. E. Colon, D. W. Elsaesser, Y. K. Yeo, R. L. Hengehold, G. S. Pomrenke

Appl. Phys. Lett. 63, 216–218 (1993)

https://doi.org/10.1063/1.110345

Published: July 1993

View article titled, Enhancement of the Er3+ emissions from AlGaAs:Er codoped with oxygen

Journal Articles

Molecular‐beam epitaxial growth and characterization of erbium‐doped GaAs and AlGaAs

K. R. Evans, E. N. Taylor, C. E. Stutz, D. W. Elsaesser, J. E. Colon, Y. K. Yeo, R. L. Hengehold, J. S. Solomon

J. Vac. Sci. Technol. B 10, 870–872 (1992)

https://doi.org/10.1116/1.586139

Published: March 1992

View article titled, Molecular‐beam epitaxial growth and characterization of erbium‐doped GaAs and AlGaAs

Journal Articles

Near band‐edge photoluminescence from Si_1−xGe_x/Si superlattices grown by molecular‐beam epitaxy

T. D. Steiner, R. L. Hengehold, Y. K. Yeo, D. J. Godbey, P. E. Thompson, Gernot S. Pomrenke

J. Vac. Sci. Technol. B 10, 924–926 (1992)

https://doi.org/10.1116/1.586155

Published: March 1992

View article titled, Near band‐edge photoluminescence from Si1−xGex/Si superlattices grown by molecular‐beam epitaxy

NARROW

Topics

Homojunction p-n photodiodes based on As-doped single ZnO nanowire

Temperature-dependent photoluminescence of Ge/Si and Ge_1-ySn_y/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content

Degenerate parallel conducting layer and conductivity type conversion observed from p-Ge_1−ySn_y (y = 0.06%) grown on n-Si substrate

High electrical activation efficiency obtained from Si-implanted Al 0.18 Ga 0.82 N

Electrical activation studies of GaN implanted with Si from low to high dose

Temperature-dependent Hall measurements of molecular beam epitaxial grown Si-doped Al x Ga 1−x N for Al mole fraction up to 0.5

Electrical properties of boron-doped p– SiGeC grown on n − – Si substrate

Control of surface states in GaSb/Al x Ga 1−x As y Sb 1−y / Ga x In 1−x Sb/Al x Ga 1−x As y Sb 1−y quantum well structures

Recombination dynamics in InAsSb quantum-well diode lasers measured using photoluminescence upconversion

Optical characterization of molecular beam epitaxially grown InAsSb nearly lattice matched to GaSb

Deep level capture barrier in molecular beam epitaxial grown AlAs y Sb 1−y measured by isothermal capacitance transient spectroscopy

Junction characteristics of electron-irradiated Ga 0.5 In 0.5 P n + -p diodes and solar cells

Photoluminescence study of p -type CdGeAs 2 ordered semiconductor crystals

Junction characteristics of Ga_0.5In_0.5P n⁺p diodes and solar cells

Si_1−xGe_x/Si multiple quantum wells on Si(100) and Si(110) for infrared absorption

Er‐related deep centers in GaAs doped with Er by ion implantation and molecular beam epitaxy

Polarized luminescence study of ordered nonlinear optical material ZnGeP₂

Enhancement of the Er³⁺ emissions from AlGaAs:Er codoped with oxygen

Molecular‐beam epitaxial growth and characterization of erbium‐doped GaAs and AlGaAs

Near band‐edge photoluminescence from Si_1−xGe_x/Si superlattices grown by molecular‐beam epitaxy

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