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Journal Articles

THz cyclotron resonance of a 2D hole gas in a GaN/AlN heterostructure

J. Wang, D. G. Rickel, C. F. C. Chang, Z. Zhang, P. Peng, Y. Huang, A. K. Azad, D. Jena, H. G. Xing, S. A. Crooker

Appl. Phys. Lett. 126, 213102 (2025)

https://doi.org/10.1063/5.0273413

Published: May 2025

View articletitled, THz cyclotron resonance of a 2D hole gas in a GaN/AlN heterostructure

Journal Articles

Fluctuational characteristics of cavities behind an axisymmetric vehicle during water-entry

Q. Zhang (张淇), Y. Huang (黄琰), Z. E. Chen (陈质二), Z. F. Zhang (张之凡), J. C. Yu (俞建成), K. Ren (任楷), Z. Zong (宗智)

Physics of Fluids 37, 053304 (2025)

https://doi.org/10.1063/5.0268119

Published: May 2025

View articletitled, Fluctuational characteristics of cavities behind an axisymmetric vehicle during water-entry

Journal Articles

Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots

J. Brubach, T.-Y. Huang, T. Borrely, C. Greenhill, J. Walrath, G. Fedele, Y.-C. Yang, A. Zimmerman, R. S. Goldman

Appl. Phys. Lett. 126, 112107 (2025)

https://doi.org/10.1063/5.0244331

Published: March 2025

View articletitled, Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots

Journal Articles

Applications of multi-GPU computing in large-scale fully kinetic particle-in-cell simulations of space plasma

Q. Y. Xiong, S. Y. Huang, Z. G. Yuan, L. L. Kuang, B. Sharma, K. Jiang, H. H. Wu, L. Yu

AIP Advances 15, 025201 (2025)

https://doi.org/10.1063/5.0251687

Published: February 2025

View articletitled, Applications of multi-GPU computing in large-scale fully kinetic particle-in-cell simulations of space plasma

Journal Articles

Hydrodynamic characteristics of cavity fluctuation behind a cone-rod assembly entering water

Q. Zhang (张淇), J. C. Yu (俞建成), Y. Huang (黄琰), T. Z. Sun (孙铁志), Z. Zong (宗智)

Physics of Fluids 36, 122101 (2024)

https://doi.org/10.1063/5.0235017

Published: December 2024

View articletitled, Hydrodynamic characteristics of cavity fluctuation behind a cone-rod assembly entering water

Journal Articles

Effects of lattice instability on the thermoelectric behavior of kagome metal ScV₆Sn₆

C. N. Kuo, R. Y. Huang, W. S. Tian, C. K. Hong, Y. R. Ou, Y. K. Kuo, C. S. Lue

Appl. Phys. Lett. 125, 152202 (2024)

https://doi.org/10.1063/5.0231041

Published: October 2024

View articletitled, Effects of lattice instability on the thermoelectric behavior of kagome metal ScV6Sn6

Journal Articles

Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers

T.-Y. Huang, T. Borrely, Y.-C. Yang, A. Alzeidan, G. M. Jacobsen, M. D. Teodoro, A. A. Quivy, R. S. Goldman

Appl. Phys. Lett. 125, 122108 (2024)

https://doi.org/10.1063/5.0219815

Published: September 2024

View articletitled, Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers

Journal Articles

Influence of non-stoichiometry and local atomic environments on carrier transport in GaAs_{1 − x − y}N_xBi_y alloys

J. W. Mitchell, C. M. Greenhill, T.-Y. Huang, T. Jen, Y.-C. Yang, K. Hammond, J. N. Heyman, R. S. Goldman

Appl. Phys. Lett. 124, 152108 (2024)

https://doi.org/10.1063/5.0187750

Published: April 2024

View articletitled, Influence of non-stoichiometry and local atomic environments on carrier transport in GaAs1 − x − yNxBiy alloys

Includes: Supplementary data

Journal Articles

Publisher’s Note: “A vacuum-compatible cylindrical inertial rotation sensor with picoradian sensitivity” [Rev. Sci. Instrum. 94, 094503 (2023)]

M. P. Ross, J. van Dongen, Y. Huang, H. Zhou, Y. Chowdhury, S. K. Apple, C. M. Mow-Lowry, A. L. Mitchell, N. A. Holland, B. Lantz, E. Bonilla, A. Engl, A. Pele, D. Griffith, E. Sanchez, E. A. Shaw, C. Gettings, J. Gundlach

Rev. Sci. Instrum. 94, 129901 (2023)

https://doi.org/10.1063/5.0187854

Published: December 2023

View articletitled, Publisher’s Note: “A vacuum-compatible cylindrical inertial rotation sensor with picoradian sensitivity” [Rev. Sci. Instrum. 94, 094503 (2023)]

Journal Articles

Probing conduction band offsets and confined states at GaAs/GaAsNBi heterointerfaces

T.-Y. Huang, J. Occena, C. Greenhill, T. Borrely, Y.-C. Yang, J. Hu, A. Chen, C. Zinn, K. Jenkins, L. Li, C. Kurdak, R. S. Goldman

Appl. Phys. Lett. 123, 192105 (2023)

https://doi.org/10.1063/5.0172295

Published: November 2023

View articletitled, Probing conduction band offsets and confined states at GaAs/GaAsNBi heterointerfaces

Includes: Supplementary data

Journal Articles

Structure and cryogenic mechanical properties of severely deformed nonequiatomic alloys of Fe–Mn–Co–Cr system

E. D. Tabachnikova, T. V. Hryhorova, S. N. Smirnov, I. V. Kolodiy, Yu. O. Shapovalov, A. V. Levenets, S. E. Shumilin, I. V. Kashuba, M. A. Tikhonovsky, F. Spieckermann, M. J. Zehetbauer, E. Schafler, Y. Huang, T. G. Langdon

Low Temp. Phys. 49, 1294–1305 (2023)

https://doi.org/10.1063/10.0021377

Published: November 2023

View articletitled, Structure and cryogenic mechanical properties of severely deformed nonequiatomic alloys of Fe–Mn–Co–Cr system

Journal Articles

A vacuum-compatible cylindrical inertial rotation sensor with picoradian sensitivity

Rev. Sci. Instrum. 94, 094503 (2023)

https://doi.org/10.1063/5.0167283

Published: September 2023

View articletitled, A vacuum-compatible cylindrical inertial rotation sensor with picoradian sensitivity

Journal Articles

Neuromorphic computing devices based on the asymmetric temperature gradient

H. J. Chen, C. C. Chiang, C. Y. Cheng, D. Qu, S. Y. Huang

Appl. Phys. Lett. 122, 264102 (2023)

https://doi.org/10.1063/5.0155229

Published: June 2023

View articletitled, Neuromorphic computing devices based on the asymmetric temperature gradient

Includes: Supplementary data

Journal Articles

Long-pulse high-performance H-mode plasmas achieved on EAST

Phys. Plasmas 30, 062504 (2023)

https://doi.org/10.1063/5.0146690

Published: June 2023

View articletitled, Long-pulse high-performance H-mode plasmas achieved on EAST

Journal Articles

Disordered hyperuniform solid state materials

Duyu Chen, Houlong Zhuang, Mohan Chen, Pinshane Y. Huang, Vojtech Vlcek, Yang Jiao

Appl. Phys. Rev. 10, 021310 (2023)

https://doi.org/10.1063/5.0137187

Published: May 2023

View articletitled, Disordered hyperuniform solid state materials

Journal Articles

General theory on the growth kinetics of topological domain structure in hexagonal manganites

H. L. Lin, K. L. Yang, Y. Huang, L. Lin, Z. B. Yan, J.-M. Liu

J. Appl. Phys. 133, 134102 (2023)

https://doi.org/10.1063/5.0138700

Published: April 2023

View articletitled, General theory on the growth kinetics of topological domain structure in hexagonal manganites

Journal Articles

Strong-to-fragile transition in a metallic-glass forming supercooled liquid associated with a liquid–liquid transition

L. F. Ouyang, J. Shen, Y. Huang, Y. H. Sun, H. Y. Bai, W. H. Wang

J. Appl. Phys. 133, 085105 (2023)

https://doi.org/10.1063/5.0137847

Published: February 2023

View articletitled, Strong-to-fragile transition in a metallic-glass forming supercooled liquid associated with a liquid–liquid transition

Journal Articles

Non-inductive plasma vertical position measurement for the 1056 s discharge on EAST

H. Lian, H. Q. Liu, D. L. Brower, W. X. Ding, Y. Huang, S. X. Wang, W. M. Li, Y. Q. Chu, R. J. Zhu, Y. X. Jie

Rev. Sci. Instrum. 93, 103511 (2022)

https://doi.org/10.1063/5.0101707

Published: October 2022

View articletitled, Non-inductive plasma vertical position measurement for the 1056 s discharge on EAST

Journal Articles

Probing electronic dead layers in homoepitaxial n-SrTiO₃(001) films

S. A. Chambers, D. Lee, Z. Yang, Y. Huang, W. Samarakoon, H. Zhou, P. V. Sushko, T. K. Truttmann, L. W. Wangoh, T.-L. Lee, J. Gabel, B. Jalan

APL Mater. 10, 070903 (2022)

https://doi.org/10.1063/5.0098500

Published: July 2022

View articletitled, Probing electronic dead layers in homoepitaxial n-SrTiO3(001) films

Includes: Supplementary data

Journal Articles

Impact of Si doping on dislocation behavior in MOVPE-grown AlN on high-temperature annealed AlN buffer layers

A. Mogilatenko, S. Walde, S. Hagedorn, C. Netzel, C.-Y. Huang, M. Weyers

J. Appl. Phys. 131, 045702 (2022)

https://doi.org/10.1063/5.0073076

Published: January 2022

View articletitled, Impact of Si doping on dislocation behavior in MOVPE-grown AlN on high-temperature annealed AlN buffer layers

Includes: Supplementary data

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THz cyclotron resonance of a 2D hole gas in a GaN/AlN heterostructure

Fluctuational characteristics of cavities behind an axisymmetric vehicle during water-entry

Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots

Applications of multi-GPU computing in large-scale fully kinetic particle-in-cell simulations of space plasma

Hydrodynamic characteristics of cavity fluctuation behind a cone-rod assembly entering water

Effects of lattice instability on the thermoelectric behavior of kagome metal ScV₆Sn₆

Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers

Influence of non-stoichiometry and local atomic environments on carrier transport in GaAs_{1 − x − y}N_xBi_y alloys

Publisher’s Note: “A vacuum-compatible cylindrical inertial rotation sensor with picoradian sensitivity” [Rev. Sci. Instrum. 94, 094503 (2023)]

Probing conduction band offsets and confined states at GaAs/GaAsNBi heterointerfaces

Structure and cryogenic mechanical properties of severely deformed nonequiatomic alloys of Fe–Mn–Co–Cr system

A vacuum-compatible cylindrical inertial rotation sensor with picoradian sensitivity

Neuromorphic computing devices based on the asymmetric temperature gradient

Long-pulse high-performance H-mode plasmas achieved on EAST

Disordered hyperuniform solid state materials

General theory on the growth kinetics of topological domain structure in hexagonal manganites

Strong-to-fragile transition in a metallic-glass forming supercooled liquid associated with a liquid–liquid transition

Non-inductive plasma vertical position measurement for the 1056 s discharge on EAST

Probing electronic dead layers in homoepitaxial n-SrTiO₃(001) films

Impact of Si doping on dislocation behavior in MOVPE-grown AlN on high-temperature annealed AlN buffer layers

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