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Journal Articles

Performance limiting inhomogeneities of defect states in ampere-class Ga₂O₃ power diodes

Z. P. Wang, N. Sun, X. X. Yu, H. H. Gong, X. L. Ji, F.-F. Ren, S. L. Gu, Y. D. Zheng, R. Zhang, A. Yu. Kuznetsov, J. D. Ye

Appl. Phys. Rev. 11, 021413 (2024)

https://doi.org/10.1063/5.0191343

Published: April 2024

View article titled, Performance limiting inhomogeneities of defect states in ampere-class Ga2O3 power diodes

Includes: Supplementary data

Journal Articles

A self-aligned Ga₂O₃ heterojunction barrier Schottky power diode

T. C. Hu, Z. P. Wang, N. Sun, H. H. Gong, X. X. Yu, F. F. Ren, Y. Yang, S. L. Gu, Y. D. Zheng, R. Zhang, J. D. Ye

Appl. Phys. Lett. 123, 013507 (2023)

https://doi.org/10.1063/5.0147251

Published: July 2023

View article titled, A self-aligned Ga2O3 heterojunction barrier Schottky power diode

Includes: Supplementary data

Journal Articles

Traps inhomogeneity induced conversion of Shockley–Read–Hall recombination in NiO/β-Ga₂O₃ p⁺–n heterojunction diodes

Z. P. Wang, H. H. Gong, X. X. Yu, T. C. Hu, X. L. Ji, F.-F. Ren, S. L. Gu, Y. D. Zheng, R. Zhang, J. D. Ye

Appl. Phys. Lett. 122, 152102 (2023)

https://doi.org/10.1063/5.0138426

Published: April 2023

View article titled, Traps inhomogeneity induced conversion of Shockley–Read–Hall recombination in NiO/β-Ga2O3 p+–n heterojunction diodes

Includes: Supplementary data

Journal Articles

Dislocation dynamics in α-Ga₂O₃ micropillars from selective-area epitaxy to epitaxial lateral overgrowth

Y. J. Zhang, Z. P. Wang, Y. Kuang, H. H. Gong, J. G. Hao, X. Y. Sun, F.-F. Ren, Y. Yang, S. L. Gu, Y. D. Zheng, R. Zhang, J. D. Ye

Appl. Phys. Lett. 120, 121601 (2022)

https://doi.org/10.1063/5.0085367

Published: March 2022

View article titled, Dislocation dynamics in α-Ga2O3 micropillars from selective-area epitaxy to epitaxial lateral overgrowth

Includes: Supplementary data

Journal Articles

Over 1.8 GW/cm² beveled-mesa NiO/β-Ga₂O₃ heterojunction diode with 800 V/10 A nanosecond switching capability

F. Zhou, H. H. Gong, Z. P. Wang, W. Z. Xu, X. X. Yu, Y. Yang, F.-F. Ren, S. L. Gu, R. Zhang, Y. D. Zheng, H. Lu, J. D. Ye

Appl. Phys. Lett. 119, 262103 (2021)

https://doi.org/10.1063/5.0071280

Published: December 2021

View article titled, Over 1.8 GW/cm2 beveled-mesa NiO/β-Ga2O3 heterojunction diode with 800 V/10 A nanosecond switching capability

Journal Articles

Strain-driven phase manipulation of α- and κ-Ga₂O₃ by nanoepitaxial lateral overgrowth on embedded α-In₂O₃ submicron dots

Y. Kuang, T. C. Ma, X. H. Chen, J. G. Hao, F.-F. Ren, S. L. Gu, R. Zhang, Y. D. Zheng, J. D. Ye

Appl. Phys. Lett. 119, 182102 (2021)

https://doi.org/10.1063/5.0068813

Published: November 2021

View article titled, Strain-driven phase manipulation of α- and κ-Ga2O3 by nanoepitaxial lateral overgrowth on embedded α-In2O3 submicron dots

Includes: Supplementary data

Journal Articles

Nitrogen modulation of boron doping behavior for accessible n-type diamond

D. Y. Liu, L. C. Hao, Y. Teng, F. Qin, Y. Shen, K. Tang, J. D. Ye, S. M. Zhu, R. Zhang, Y. D. Zheng, S. L. Gu

APL Mater. 9, 081106 (2021)

https://doi.org/10.1063/5.0049151

Published: August 2021

View article titled, Nitrogen modulation of boron doping behavior for accessible n-type diamond

Includes: Supplementary data

Journal Articles

In situ heteroepitaxial construction and transport properties of lattice-matched α -Ir₂O₃/ α -Ga₂O₃ p-n heterojunction

J. G. Hao, H. H. Gong, X. H. Chen, Y. Xu, F.-F. Ren, S. L. Gu, R. Zhang, Y. D. Zheng, J. D. Ye

Appl. Phys. Lett. 118, 261601 (2021)

https://doi.org/10.1063/5.0047710

Published: June 2021

View article titled, In situ heteroepitaxial construction and transport properties of lattice-matched α -Ir2O3/ α -Ga2O3 p-n heterojunction

Includes: Supplementary data

Journal Articles

β-Ga₂O₃ vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings

H. H. Gong, X. X. Yu, Y. Xu, X. H. Chen, Y. Kuang, Y. J. Lv, Y. Yang, F.-F. Ren, Z. H. Feng, S. L. Gu, Y. D. Zheng, R. Zhang, J. D. Ye

Appl. Phys. Lett. 118, 202102 (2021)

https://doi.org/10.1063/5.0050919

Published: May 2021

View article titled, β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings

Includes: Supplementary data

Journal Articles

Misfit epitaxial strain manipulated transport properties in cubic In₂O₃ hetero-epilayers

Y. Kuang, T. C. Ma, X. H. Chen, J. Li, F.-F. Ren, B. Liu, X. Y. Cui, S. P. Ringer, S. M. Zhu, S. L. Gu, R. Zhang, Y. D. Zheng, J. D. Ye

Appl. Phys. Lett. 117, 102104 (2020)

https://doi.org/10.1063/5.0021344

Published: September 2020

View article titled, Misfit epitaxial strain manipulated transport properties in cubic In2O3 hetero-epilayers

Includes: Supplementary data

Journal Articles

Sulfur regulation of boron doping and growth behavior for high-quality diamond in microwave plasma chemical vapor deposition

D. Y. Liu, L. C. Hao, Z. A. Chen, W. K. Zhao, Y. Shen, Y. Bian, K. Tang, J. D. Ye, S. M. Zhu, R. Zhang, Y. D. Zheng, S. L. Gu

Appl. Phys. Lett. 117, 022101 (2020)

https://doi.org/10.1063/5.0009615

Published: July 2020

View article titled, Sulfur regulation of boron doping and growth behavior for high-quality diamond in microwave plasma chemical vapor deposition

Includes: Supplementary data

Journal Articles

On the origin of dislocation generation and annihilation in α -Ga₂O₃ epilayers on sapphire

T. C. Ma, X. H. Chen, Y. Kuang, L. Li, J. Li, F. Kremer, F.-F. Ren, S. L. Gu, R. Zhang, Y. D. Zheng, H. H. Tan, C. Jagadish, J. D. Ye

Appl. Phys. Lett. 115, 182101 (2019)

https://doi.org/10.1063/1.5120554

Published: October 2019

View article titled, On the origin of dislocation generation and annihilation in α -Ga2O3 epilayers on sapphire

Journal Articles

AlGaN ultraviolet Avalanche photodiodes based on a triple-mesa structure

Q. Cai, W. K. Luo, Q. Li, M. Li, D. J. Chen, H. Lu, R. Zhang, Y. D. Zheng

Appl. Phys. Lett. 113, 123503 (2018)

https://doi.org/10.1063/1.5049621

Published: September 2018

View article titled, AlGaN ultraviolet Avalanche photodiodes based on a triple-mesa structure

Journal Articles

Interlayer transport of nuclear spin polarization in ν = 2/3 quantum Hall states

S. Tsuda, M. H. Nguyen, D. Terasawa, A. Fukuda, Y. D. Zheng, T. Arai, A. Sawada

AIP Conf. Proc. 1566, 293–294 (2013)

https://doi.org/10.1063/1.4848401

Published: December 2013

View article titled, Interlayer transport of nuclear spin polarization in ν = 2/3 quantum Hall states

Journal Articles

Spin-pseudospin intertwined excitation at the ν = 1 bilayer quantum Hall state investigated by nuclear-spin relaxation

S. Tsuda, D. Terasawa, M. H. Nguyen, A. Fukuda, Y. D. Zheng, T. Arai, A. Sawada, Z. F. Ezawa

AIP Conf. Proc. 1566, 269–270 (2013)

https://doi.org/10.1063/1.4848389

Published: December 2013

View article titled, Spin-pseudospin intertwined excitation at the ν = 1 bilayer quantum Hall state investigated by nuclear-spin relaxation

Journal Articles

Analysis of magnetic structures of iron nitrides by Landau's theory of second-order phase transitions

H. N. Fang, R. Zhang, B. Liu, Z. K. Tao, M. W. Xiao, X. F. Wang, Z. L. Xie, X. Q. Xiu, Y. D. Zheng

AIP Advances 3, 072136 (2013)

https://doi.org/10.1063/1.4817589

Published: July 2013

View article titled, Analysis of magnetic structures of iron nitrides by Landau's theory of second-order phase transitions

Journal Articles

Back-illuminated separate absorption and multiplication AlGaN solar-blind avalanche photodiodes

Y. Huang, D. J. Chen, H. Lu, K. X. Dong, R. Zhang, Y. D. Zheng, L. Li, Z. H. Li

Appl. Phys. Lett. 101, 253516 (2012)

https://doi.org/10.1063/1.4772984

Published: December 2012

View article titled, Back-illuminated separate absorption and multiplication AlGaN solar-blind avalanche photodiodes

Journal Articles

Excited States of Spins and Pseudospins in the ν = 2/3 Bilayer Quantum Hall Systems

Y. D. Zheng, T. Morikawa, A. Fukuda, S. Tsuda, T. Arai, Z. F. Ezawa, A. Sawada

AIP Conf. Proc. 1399, 635–636 (2011)

https://doi.org/10.1063/1.3666538

Published: December 2011

View article titled, Excited States of Spins and Pseudospins in the ν = 2/3 Bilayer Quantum Hall Systems

Journal Articles

Effects of the In‐plane Magnetic Fields on Excitations of the ν = 1/3 Bilayer Quantum Hall States in the Vicinity of Single Layer Limit

A. Fukuda, T. Sekikawa, K. Iwata, Y. Ogasawara, Y. D. Zheng, T. Morikawa, D. Terasawa, S. Tsuda, T. Arai, Z. F. Ezawa, A. Sawada

AIP Conf. Proc. 1399, 609–610 (2011)

https://doi.org/10.1063/1.3666525

Published: December 2011

View article titled, Effects of the In‐plane Magnetic Fields on Excitations of the ν = 1/3 Bilayer Quantum Hall States in the Vicinity of Single Layer Limit

Journal Articles

Current transport mechanisms of InGaN metal-insulator-semiconductor photodetectors

Z. G. Shao, D. J. Chen, B. Liu, H. Lu, Z. L. Xie, R. Zhang, Y. D. Zheng

J. Vac. Sci. Technol. B 29, 051201 (2011)

https://doi.org/10.1116/1.3622298

Published: August 2011

View article titled, Current transport mechanisms of InGaN metal-insulator-semiconductor photodetectors

NARROW

Topics

Performance limiting inhomogeneities of defect states in ampere-class Ga₂O₃ power diodes

A self-aligned Ga₂O₃ heterojunction barrier Schottky power diode

Traps inhomogeneity induced conversion of Shockley–Read–Hall recombination in NiO/β-Ga₂O₃ p⁺–n heterojunction diodes

Dislocation dynamics in α-Ga₂O₃ micropillars from selective-area epitaxy to epitaxial lateral overgrowth

Over 1.8 GW/cm² beveled-mesa NiO/β-Ga₂O₃ heterojunction diode with 800 V/10 A nanosecond switching capability

Strain-driven phase manipulation of α- and κ-Ga₂O₃ by nanoepitaxial lateral overgrowth on embedded α-In₂O₃ submicron dots

Nitrogen modulation of boron doping behavior for accessible n-type diamond

In situ heteroepitaxial construction and transport properties of lattice-matched α -Ir₂O₃/ α -Ga₂O₃ p-n heterojunction

β-Ga₂O₃ vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings

Misfit epitaxial strain manipulated transport properties in cubic In₂O₃ hetero-epilayers

Sulfur regulation of boron doping and growth behavior for high-quality diamond in microwave plasma chemical vapor deposition

On the origin of dislocation generation and annihilation in α -Ga₂O₃ epilayers on sapphire

AlGaN ultraviolet Avalanche photodiodes based on a triple-mesa structure

Interlayer transport of nuclear spin polarization in ν = 2/3 quantum Hall states

Spin-pseudospin intertwined excitation at the ν = 1 bilayer quantum Hall state investigated by nuclear-spin relaxation

Analysis of magnetic structures of iron nitrides by Landau's theory of second-order phase transitions

Back-illuminated separate absorption and multiplication AlGaN solar-blind avalanche photodiodes

Excited States of Spins and Pseudospins in the ν = 2/3 Bilayer Quantum Hall Systems

Effects of the In‐plane Magnetic Fields on Excitations of the ν = 1/3 Bilayer Quantum Hall States in the Vicinity of Single Layer Limit

Current transport mechanisms of InGaN metal-insulator-semiconductor photodetectors

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