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Journal Articles

Perfecting the Al₂O₃/In_0.53Ga_0.47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition

M. Hong, H. W. Wan, K. Y. Lin, Y. C. Chang, M. H. Chen, Y. H. Lin, T. D. Lin, T. W. Pi, J. Kwo

Appl. Phys. Lett. 111, 123502 (2017)

https://doi.org/10.1063/1.5003616

Published: September 2017

View articletitled, Perfecting the Al2O3/In0.53Ga0.47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition

Journal Articles

Phonon bottleneck in GaAs/Al_xGa_1−xAs quantum dots

Y. C. Chang, A. J. Robson, S. Harrison, Q. D. Zhuang, M. Hayne

AIP Advances 5, 067141 (2015)

https://doi.org/10.1063/1.4922950

Published: June 2015

View articletitled, Phonon bottleneck in GaAs/AlxGa1−xAs quantum dots

Journal Articles

Effect of L1₂ ordering in antiferromagnetic Ir-Mn epitaxial layer on exchange bias of FePd films

Y. C. Chang, S. N. Hsiao, S. H. Liu, S. H. Su, K. F. Chiu, W. C. Hsieh, S. K. Chen, Y. G. Lin, H. Y. Lee, C. K. Sung, J. G. Duh

J. Appl. Phys. 117, 17D154 (2015)

https://doi.org/10.1063/1.4919232

Published: April 2015

View articletitled, Effect of L12 ordering in antiferromagnetic Ir-Mn epitaxial layer on exchange bias of FePd films

Journal Articles

Influence of stoichiometry and growth temperature on the crystal structure and magnetic properties of epitaxial L1_{Fe-Pd (001) films}

Y. C. Chang, S. N. Hsiao, S. H. Liu, S. K. Chen, Y. T. Liu, H. Y. Lee, A. C. Sun, J. G. Dhu

J. Appl. Phys. 115, 17A740 (2014)

https://doi.org/10.1063/1.4867229

Published: March 2014

View articletitled, Influence of stoichiometry and growth temperature on the crystal structure and magnetic properties of epitaxial L1 Fe-Pd (001) films

Journal Articles

Synchrotron radiation photoemission study of interfacial electronic structure of HfO₂ on In_0.53Ga_0.47As(001)-4 × 2 from atomic layer deposition

T. W. Pi (皮敦文), T. D. Lin (林宗達), H. Y. Lin (林孝于), Y. C. Chang (張耀中), G. K. Wertheim, J. Kwo (郭瑞年), M. Hong (洪銘輝)

Appl. Phys. Lett. 104, 042904 (2014)

https://doi.org/10.1063/1.4863440

Published: January 2014

View articletitled, Synchrotron radiation photoemission study of interfacial electronic structure of HfO2 on In0.53Ga0.47As(001)-4 × 2 from atomic layer deposition

Journal Articles

High-performance self-aligned inversion-channel In_0.53Ga_0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO₂

T. D. Lin (林宗達), W. H. Chang (張文馨), R. L. Chu (朱瑞霖), Y. C. Chang (張耀中), Y. H. Chang (張宇行), M. Y. Lee (李美儀), P. F. Hong (洪鵬飛), Min-Cheng Chen (陳旻政), J. Kwo (郭瑞年), M. Hong (洪銘輝)

Appl. Phys. Lett. 103, 253509 (2013)

https://doi.org/10.1063/1.4852975

Published: December 2013

View articletitled, High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2

Journal Articles

Periodic reversal of magneto-optic Faraday rotation on uniaxial birefringence crystal with ultrathin magnetic films

C. W. Su, S. C. Chang, Y. C. Chang

AIP Advances 3, 072125 (2013)

https://doi.org/10.1063/1.4816799

Published: July 2013

View articletitled, Periodic reversal of magneto-optic Faraday rotation on uniaxial birefringence crystal with ultrathin magnetic films

Journal Articles

Optical properties of AlAs_xSb₁₋_x alloys determined by in situ ellipsometry

J. Y. Kim, J. J. Yoon, T. J. Kim, Y. D. Kim, E. H. Lee, M. H. Bae, J. D. Song, W. J. Choi, C.-T. Liang, Y.-C. Chang

Appl. Phys. Lett. 103, 011901 (2013)

https://doi.org/10.1063/1.4812834

Published: July 2013

View articletitled, Optical properties of AlAsxSb1−x alloys determined by in situ ellipsometry

Journal Articles

Sensing H⁺ with conventional neural probes

T. Trantidou, T. Prodromakis, V. Tsiligkiridis, Y.-C. Chang, C. Toumazou

Appl. Phys. Lett. 102, 223506 (2013)

https://doi.org/10.1063/1.4809674

Published: June 2013

View articletitled, Sensing H+ with conventional neural probes

Journal Articles

Interband transitions and dielectric functions of InGaSb alloys

T. J. Kim, J. J. Yoon, J. S. Byun, S. Y. Hwang, D. E. Aspnes, S. H. Shin, J. D. Song, C.-T. Liang, Y.-C. Chang, N. S. Barange, J. Y. Kim, Y. D. Kim

Appl. Phys. Lett. 102, 102109 (2013)

https://doi.org/10.1063/1.4795622

Published: March 2013

View articletitled, Interband transitions and dielectric functions of InGaSb alloys

Journal Articles

Inversion-channel GaAs(100) metal-oxide-semiconductor field-effect-transistors using molecular beam deposited Al₂O₃ as a gate dielectric on different reconstructed surfaces

Y. C. Chang (張耀中), W. H. Chang (張文馨), C. Merckling, J. Kwo (郭瑞年), M. Hong (洪銘輝)

Appl. Phys. Lett. 102, 093506 (2013)

https://doi.org/10.1063/1.4793433

Published: March 2013

View articletitled, Inversion-channel GaAs(100) metal-oxide-semiconductor field-effect-transistors using molecular beam deposited Al2O3 as a gate dielectric on different reconstructed surfaces

Journal Articles

Shot noise of multichannel transport in mesoscopic junction systems

I. L. Ho, D. S. Chung, M. T. Lee, C. S. Wu, Y. C. Chang, C. D. Chen

J. Appl. Phys. 111, 064501 (2012)

https://doi.org/10.1063/1.3692805

Published: March 2012

View articletitled, Shot noise of multichannel transport in mesoscopic junction systems

Journal Articles

InAs MOS devices passivated with molecular beam epitaxy-grown Gd₂O₃ dielectrics

C. A. Lin, M. L. Huang, P.-C. Chiu, H.-K. Lin, J.-I. Chyi, T. H. Chiang, W. C. Lee, Y. C. Chang, Y. H. Chang, G. J. Brown, J. Kwo, M. Hong

J. Vac. Sci. Technol. B 30, 02B118 (2012)

https://doi.org/10.1116/1.3678206

Published: February 2012

View articletitled, InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectrics

Journal Articles

Publisher’s Note: “Attainment of low interfacial trap density absent of a large midgap peak in In 0.2 Ga 0.8 As by Ga 2 O 3 ( Gd 2 O 3 ) passivation” [Appl. Phys. Lett. 98, 062108 (2011)]

C. A. Lin, H. C. Chiu, T. H. Chiang, T. D. Lin, Y. H. Chang, W. H. Chang, Y. C. Chang, W.-E. Wang, J. Dekoster, T. Y. Hoffmann, M. Hong, J. Kwo

Appl. Phys. Lett. 98, 109901 (2011)

https://doi.org/10.1063/1.3566014

Published: March 2011

View articletitled, Publisher’s Note: “Attainment of low interfacial trap density absent of a large midgap peak in In 0.2 Ga 0.8 As by Ga 2 O 3 ( Gd 2 O 3 ) passivation” [Appl. Phys. Lett. 98, 062108 (2011)]

Journal Articles

Attainment of low interfacial trap density absent of a large midgap peak in In 0.2 Ga 0.8 As by Ga 2 O 3 ( Gd 2 O 3 ) passivation

C. A. Lin, H. C. Chiu, T. H. Chiang, T. D. Lin, Y. H. Chang, W. H. Chang, Y. C. Chang, W.-E. Wang, J. Dekoster, T. Y. Hoffmann, M. Hong, J. Kwo

Appl. Phys. Lett. 98, 062108 (2011)

https://doi.org/10.1063/1.3554375

Published: February 2011

View articletitled, Attainment of low interfacial trap density absent of a large midgap peak in In 0.2 Ga 0.8 As by Ga 2 O 3 ( Gd 2 O 3 ) passivation

Journal Articles

Compensation effect and differential capacitance analysis of electronic energy band structure in relaxed InAs quantum dots

J. F. Chen, Ross C. C. Chen, C. H. Chiang, M. C. Hsieh, Y. C. Chang, Y. F. Chen

J. Appl. Phys. 108, 063705 (2010)

https://doi.org/10.1063/1.3467938

Published: September 2010

View articletitled, Compensation effect and differential capacitance analysis of electronic energy band structure in relaxed InAs quantum dots

Journal Articles

Effective reduction of interfacial traps in Al 2 O 3 / GaAs (001) gate stacks using surface engineering and thermal annealing

Y. C. Chang, C. Merckling, J. Penaud, C. Y. Lu, W.-E. Wang, J. Dekoster, M. Meuris, M. Caymax, M. Heyns, J. Kwo, M. Hong

Appl. Phys. Lett. 97, 112901 (2010)

https://doi.org/10.1063/1.3488813

Published: September 2010

View articletitled, Effective reduction of interfacial traps in Al 2 O 3 / GaAs (001) gate stacks using surface engineering and thermal annealing

Journal Articles

Dielectric functions and interband transitions of In 1 − x Al x Sb alloys

J. J. Yoon, T. J. Kim, Y. W. Jung, D. E. Aspnes, Y. D. Kim, H. J. Kim, Y. C. Chang, S. H. Shin, J. D. Song

Appl. Phys. Lett. 97, 111902 (2010)

https://doi.org/10.1063/1.3488827

Published: September 2010

View articletitled, Dielectric functions and interband transitions of In 1 − x Al x Sb alloys

Journal Articles

Communications: On the relation between the scalar and tensor exchange-correlation kernels of the time-dependent density-functional theory

V. U. Nazarov, G. Vignale, Y.-C. Chang

J. Chem. Phys. 133, 021101 (2010)

https://doi.org/10.1063/1.3455711

Published: July 2010

View articletitled, Communications: On the relation between the scalar and tensor exchange-correlation kernels of the time-dependent density-functional theory

Journal Articles

Engineering of threshold voltages in molecular beam epitaxy-grown Al 2 O 3 ∕ Ga 2 O 3 ( Gd 2 O 3 ) ∕ In 0.2 Ga 0.8 As

Y. D. Wu, T. D. Lin, T. H. Chiang, Y. C. Chang, H. C. Chiu, Y. J. Lee, M. Hong, C. A. Lin, J. Kwo

J. Vac. Sci. Technol. B 28, C3H10–C3H13 (2010)

https://doi.org/10.1116/1.3271141

Published: April 2010

View articletitled, Engineering of threshold voltages in molecular beam epitaxy-grown Al 2 O 3 ∕ Ga 2 O 3 ( Gd 2 O 3 ) ∕ In 0.2 Ga 0.8 As

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Perfecting the Al₂O₃/In_0.53Ga_0.47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition

Phonon bottleneck in GaAs/Al_xGa_1−xAs quantum dots

Effect of L1₂ ordering in antiferromagnetic Ir-Mn epitaxial layer on exchange bias of FePd films

Influence of stoichiometry and growth temperature on the crystal structure and magnetic properties of epitaxial L1_{Fe-Pd (001) films}

Synchrotron radiation photoemission study of interfacial electronic structure of HfO₂ on In_0.53Ga_0.47As(001)-4 × 2 from atomic layer deposition

High-performance self-aligned inversion-channel In_0.53Ga_0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO₂

Periodic reversal of magneto-optic Faraday rotation on uniaxial birefringence crystal with ultrathin magnetic films

Optical properties of AlAs_xSb₁₋_x alloys determined by in situ ellipsometry

Sensing H⁺ with conventional neural probes

Interband transitions and dielectric functions of InGaSb alloys

Inversion-channel GaAs(100) metal-oxide-semiconductor field-effect-transistors using molecular beam deposited Al₂O₃ as a gate dielectric on different reconstructed surfaces

Shot noise of multichannel transport in mesoscopic junction systems

InAs MOS devices passivated with molecular beam epitaxy-grown Gd₂O₃ dielectrics

Publisher’s Note: “Attainment of low interfacial trap density absent of a large midgap peak in In 0.2 Ga 0.8 As by Ga 2 O 3 ( Gd 2 O 3 ) passivation” [Appl. Phys. Lett. 98, 062108 (2011)]

Attainment of low interfacial trap density absent of a large midgap peak in In 0.2 Ga 0.8 As by Ga 2 O 3 ( Gd 2 O 3 ) passivation

Compensation effect and differential capacitance analysis of electronic energy band structure in relaxed InAs quantum dots

Effective reduction of interfacial traps in Al 2 O 3 / GaAs (001) gate stacks using surface engineering and thermal annealing

Dielectric functions and interband transitions of In 1 − x Al x Sb alloys

Communications: On the relation between the scalar and tensor exchange-correlation kernels of the time-dependent density-functional theory

Engineering of threshold voltages in molecular beam epitaxy-grown Al 2 O 3 ∕ Ga 2 O 3 ( Gd 2 O 3 ) ∕ In 0.2 Ga 0.8 As

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