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Journal Articles

Au ion irradiation induces ultralow thermal conductivity in GaN

Wujuan Yan, Yuanyuan Xue, Wenjiang Zhou, Yuxi Wang, Haichang Guo, Han Yang, Hongcai Yang, Zhiyao Jiang, Lili Ding, Wei Chen, Bo Shen, Xuelin Yang, Bai Song

Appl. Phys. Lett. 125, 032202 (2024)

https://doi.org/10.1063/5.0220863

Published: July 2024

View article titled, Au ion irradiation induces ultralow thermal conductivity in GaN

Journal Articles

Boric acid-induced preferential deposition of (002) plane for highly stable zinc anode

Tianzhuo Ou, Qun Cao, Dongdong Zhang, Haiyang Wu, Lulu Zhang, Ding Luo, Jiaqian Qin, Xuelin Yang, Jin Cao

Appl. Phys. Lett. 124, 183903 (2024)

https://doi.org/10.1063/5.0203943

Published: May 2024

View article titled, Boric acid-induced preferential deposition of (002) plane for highly stable zinc anode

Includes: Supplementary data

Journal Articles

Significant conductivity enhancement in Al-rich n-AlGaN by modulation doping

Xuzhou Fang, Jiaming Wang, Fujun Xu, Lisheng Zhang, Jing Lang, Xueqi Guo, Chen Ji, Chengzhi Ji, Yong Wu, Xuelin Yang, Xiangning Kang, Zhixin Qin, Ning Tang, Xinqiang Wang, Weikun Ge, Bo Shen

Appl. Phys. Lett. 124, 152106 (2024)

https://doi.org/10.1063/5.0197761

Published: April 2024

View article titled, Significant conductivity enhancement in Al-rich n-AlGaN by modulation doping

Includes: Supplementary data

Journal Articles

Enhanced robustness against hot-electron-induced degradation in active-passivation p-GaN gate HEMT

Junjie Yang, Jin Wei, Yanlin Wu, Jingjing Yu, Jiawei Cui, Xuelin Yang, Xiaosen Liu, Jinyan Wang, Yilong Hao, Maojun Wang, Bo Shen

Appl. Phys. Lett. 124, 103505 (2024)

https://doi.org/10.1063/5.0186902

Published: March 2024

View article titled, Enhanced robustness against hot-electron-induced degradation in active-passivation p-GaN gate HEMT

Journal Articles

Mitigating zinc dendrites and side reactions through the incorporation of ethylenediamine additive for zinc metal anode

Xu Wang, Dongdong Zhang, Hui Huang, Rungroj Chanajaree, Jiaqian Qin, Lulu Zhang, Ding Luo, Xuelin Yang, Jin Cao

Appl. Phys. Lett. 124, 073904 (2024)

https://doi.org/10.1063/5.0194035

Published: February 2024

View article titled, Mitigating zinc dendrites and side reactions through the incorporation of ethylenediamine additive for zinc metal anode

Includes: Supplementary data

Journal Articles

Elimination of spiral hillocks in AlGaN grown on high-temperature annealed AlN templates by adopting an AlN/AlGaN stress modulation multilayer

Xuzhou Fang, Jiaming Wang, Fujun Xu, Lisheng Zhang, Jing Lang, Ziyao Zhang, Fuyun Tan, Xuelin Yang, Xiangning Kang, Zhixin Qin, Ning Tang, Xinqiang Wang, Weikun Ge, Bo Shen

Appl. Phys. Lett. 124, 062103 (2024)

https://doi.org/10.1063/5.0184353

Published: February 2024

View article titled, Elimination of spiral hillocks in AlGaN grown on high-temperature annealed AlN templates by adopting an AlN/AlGaN stress modulation multilayer

Includes: Supplementary data

Journal Articles

RF loss reduction by a carbon-regulated Si substrate engineering in GaN-based HEMT buffer stacks

Zidong Cai, Xuelin Yang, Zhaohua Shen, Cheng Ma, Zhenghao Chen, Danshuo Liu, Fujun Xu, Ning Tang, Xinqiang Wang, Weikun Ge, Bo Shen

Appl. Phys. Lett. 123, 042102 (2023)

https://doi.org/10.1063/5.0156496

Published: July 2023

View article titled, RF loss reduction by a carbon-regulated Si substrate engineering in GaN-based HEMT buffer stacks

Includes: Supplementary data

Journal Articles

High mobility GaN drift layer on Si substrates: The role of surface N vacancy on carbon incorporation

Zhenghao Chen, Xuelin Yang, Danshuo Liu, Zidong Cai, Huayang Huang, Liwen Sang, Fujun Xu, Xinqiang Wang, Weikun Ge, Bo Shen

Appl. Phys. Lett. 123, 022101 (2023)

https://doi.org/10.1063/5.0157541

Published: July 2023

View article titled, High mobility GaN drift layer on Si substrates: The role of surface N vacancy on carbon incorporation

Journal Articles

Synergy of charge capture and transfer by Ni-MOF nanosheets for enhancing energy storage performance of polyetherimide-based dielectric nanocomposites

Hongye Li, Yuxiao Li, Xuelin Yang, Dahuan Liu, Xiaolin Liu

Appl. Phys. Lett. 122, 202903 (2023)

https://doi.org/10.1063/5.0145879

Published: May 2023

View article titled, Synergy of charge capture and transfer by Ni-MOF nanosheets for enhancing energy storage performance of polyetherimide-based dielectric nanocomposites

Includes: Supplementary data

Journal Articles

Determination of C_N deep donor level in p-GaN with heavy Mg doping via a carrier statistics approach

Huayang Huang, Xuelin Yang, Zhaohua Shen, Zhenghao Chen, Ning Tang, Fujun Xu, Xinqiang Wang, Weikun Ge, Bo Shen

J. Appl. Phys. 133, 125706 (2023)

https://doi.org/10.1063/5.0128182

Published: March 2023

View article titled, Determination of CN deep donor level in p-GaN with heavy Mg doping via a carrier statistics approach

Journal Articles

Mechanism for self-compensation in heavily carbon doped GaN

Zhaohua Shen, Xuelin Yang, Shan Wu, Huayang Huang, Xiaolan Yan, Ning Tang, Fujun Xu, Xinqiang Wang, Weikun Ge, Bing Huang, Bo Shen

AIP Advances 13, 035026 (2023)

https://doi.org/10.1063/5.0133421

Published: March 2023

View article titled, Mechanism for self-compensation in heavily carbon doped GaN

Journal Articles

Effects of Al doping on dislocation inclinations and strain of GaN films on Si substrates

Jie Zhang, Xuelin Yang, Hongping Ma, Qingchun Zhang, Bo Shen

AIP Advances 13, 025250 (2023)

https://doi.org/10.1063/5.0126796

Published: February 2023

View article titled, Effects of Al doping on dislocation inclinations and strain of GaN films on Si substrates

Journal Articles

Identification of carbon location in p-type GaN: Synchrotron x-ray absorption spectroscopy and theory

Huayang Huang, Xiaolan Yan, Xuelin Yang, Wensheng Yan, Zeming Qi, Shan Wu, Zhaohua Shen, Ning Tang, Fujun Xu, Xinqiang Wang, Weikun Ge, Bing Huang, Bo Shen

Appl. Phys. Lett. 121, 252101 (2022)

https://doi.org/10.1063/5.0132130

Published: December 2022

View article titled, Identification of carbon location in p-type GaN: Synchrotron x-ray absorption spectroscopy and theory

Includes: Supplementary data

Journal Articles

Influence of intrinsic or extrinsic doping on charge state of carbon and its interaction with hydrogen in GaN

Shan Wu, Xuelin Yang, Zhenxing Wang, Zhongwen Ouyang, Huayang Huang, Qing Zhang, Qiuyu Shang, Zhaohua Shen, Fujun Xu, Xinqiang Wang, Weikun Ge, Bo Shen

Appl. Phys. Lett. 120, 242101 (2022)

https://doi.org/10.1063/5.0093514

Published: June 2022

View article titled, Influence of intrinsic or extrinsic doping on charge state of carbon and its interaction with hydrogen in GaN

Journal Articles

GaN HEMTs on low resistivity Si substrates with thick buffer layers for RF signal amplification and power conversion

Wenjie Song, Jie Zhang, Zheyang Zheng, Sirui Feng, Xuelin Yang, Bo Shen, Kevin J. Chen

AIP Advances 12, 045125 (2022)

https://doi.org/10.1063/5.0086957

Published: April 2022

View article titled, GaN HEMTs on low resistivity Si substrates with thick buffer layers for RF signal amplification and power conversion

Journal Articles

Elastic strain engineered nanomechanical GaN resonators with thermoelastic dissipation dilution up to 600 K

Huanying Sun, Liwen Sang, Xiulin Shen, Xuelin Yang, Tiefu Li, J. Q. You, Bo Shen, Meiyong Liao

J. Appl. Phys. 131, 054502 (2022)

https://doi.org/10.1063/5.0080227

Published: February 2022

View article titled, Elastic strain engineered nanomechanical GaN resonators with thermoelastic dissipation dilution up to 600 K

Includes: Supplementary data

Journal Articles

Polarization-induced hole doping for long-wavelength In-rich InGaN solar cells

Liwen Sang, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Xuelin Yang, Bo Shen

Appl. Phys. Lett. 119, 202103 (2021)

https://doi.org/10.1063/5.0071506

Published: November 2021

View article titled, Polarization-induced hole doping for long-wavelength In-rich InGaN solar cells

Journal Articles

High-mobility n⁻-GaN drift layer grown on Si substrates

Jianfei Shen, Xuelin Yang, Huayang Huang, Danshuo Liu, Zidong Cai, Zhenghao Chen, Cheng Ma, Fujun Xu, Liwen Sang, Xinqiang Wang, Weikun Ge, Bo Shen

Appl. Phys. Lett. 118, 222106 (2021)

https://doi.org/10.1063/5.0049133

Published: June 2021

View article titled, High-mobility n−-GaN drift layer grown on Si substrates

Journal Articles

Control of dislocations in heteroepitaxial AlN films by extrinsic supersaturated vacancies introduced through thermal desorption of heteroatoms

Jiaming Wang, Fujun Xu, Baiyin Liu, Jing Lang, Na Zhang, Xiangning Kang, Zhixin Qin, Xuelin Yang, Xinqiang Wang, Weikun Ge, Bo Shen

Appl. Phys. Lett. 118, 162103 (2021)

https://doi.org/10.1063/5.0045552

Published: April 2021

View article titled, Control of dislocations in heteroepitaxial AlN films by extrinsic supersaturated vacancies introduced through thermal desorption of heteroatoms

Includes: Supplementary data

Journal Articles

High quality GaN-on-SiC with low thermal boundary resistance by employing an ultrathin AlGaN buffer layer

Yuxia Feng, Huarui Sun, Xuelin Yang, Kang Liu, Jie Zhang, Jianfei Shen, Danshuo Liu, Zidong Cai, Fujun Xu, Ning Tang, Tongjun Yu, Xinqiang Wang, Weikun Ge, Bo Shen

Appl. Phys. Lett. 118, 052104 (2021)

https://doi.org/10.1063/5.0037796

Published: February 2021

View article titled, High quality GaN-on-SiC with low thermal boundary resistance by employing an ultrathin AlGaN buffer layer

NARROW

Topics

Au ion irradiation induces ultralow thermal conductivity in GaN

Boric acid-induced preferential deposition of (002) plane for highly stable zinc anode

Significant conductivity enhancement in Al-rich n-AlGaN by modulation doping

Enhanced robustness against hot-electron-induced degradation in active-passivation p-GaN gate HEMT

Mitigating zinc dendrites and side reactions through the incorporation of ethylenediamine additive for zinc metal anode

Elimination of spiral hillocks in AlGaN grown on high-temperature annealed AlN templates by adopting an AlN/AlGaN stress modulation multilayer

RF loss reduction by a carbon-regulated Si substrate engineering in GaN-based HEMT buffer stacks

High mobility GaN drift layer on Si substrates: The role of surface N vacancy on carbon incorporation

Synergy of charge capture and transfer by Ni-MOF nanosheets for enhancing energy storage performance of polyetherimide-based dielectric nanocomposites

Determination of C_N deep donor level in p-GaN with heavy Mg doping via a carrier statistics approach

Mechanism for self-compensation in heavily carbon doped GaN

Effects of Al doping on dislocation inclinations and strain of GaN films on Si substrates

Identification of carbon location in p-type GaN: Synchrotron x-ray absorption spectroscopy and theory

Influence of intrinsic or extrinsic doping on charge state of carbon and its interaction with hydrogen in GaN

GaN HEMTs on low resistivity Si substrates with thick buffer layers for RF signal amplification and power conversion

Elastic strain engineered nanomechanical GaN resonators with thermoelastic dissipation dilution up to 600 K

Polarization-induced hole doping for long-wavelength In-rich InGaN solar cells

High-mobility n⁻-GaN drift layer grown on Si substrates

Control of dislocations in heteroepitaxial AlN films by extrinsic supersaturated vacancies introduced through thermal desorption of heteroatoms

High quality GaN-on-SiC with low thermal boundary resistance by employing an ultrathin AlGaN buffer layer

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