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Journal Articles

ScAlInN/GaN heterostructures grown by molecular beam epitaxy

Haotian Ye, Rui Wang, Liuyun Yang, Jinlin Wang, Tao Wang, Ran Feng, Xifan Xu, Wonseok Lee, Ping Wang, Xinqiang Wang

Appl. Phys. Lett. 125, 122105 (2024)

https://doi.org/10.1063/5.0228747

Published: September 2024

View article titled, ScAlInN/GaN heterostructures grown by molecular beam epitaxy

Journal Articles

Significant conductivity enhancement in Al-rich n-AlGaN by modulation doping

Xuzhou Fang, Jiaming Wang, Fujun Xu, Lisheng Zhang, Jing Lang, Xueqi Guo, Chen Ji, Chengzhi Ji, Yong Wu, Xuelin Yang, Xiangning Kang, Zhixin Qin, Ning Tang, Xinqiang Wang, Weikun Ge, Bo Shen

Appl. Phys. Lett. 124, 152106 (2024)

https://doi.org/10.1063/5.0197761

Published: April 2024

View article titled, Significant conductivity enhancement in Al-rich n-AlGaN by modulation doping

Includes: Supplementary data

Journal Articles

Elimination of spiral hillocks in AlGaN grown on high-temperature annealed AlN templates by adopting an AlN/AlGaN stress modulation multilayer

Xuzhou Fang, Jiaming Wang, Fujun Xu, Lisheng Zhang, Jing Lang, Ziyao Zhang, Fuyun Tan, Xuelin Yang, Xiangning Kang, Zhixin Qin, Ning Tang, Xinqiang Wang, Weikun Ge, Bo Shen

Appl. Phys. Lett. 124, 062103 (2024)

https://doi.org/10.1063/5.0184353

Published: February 2024

View article titled, Elimination of spiral hillocks in AlGaN grown on high-temperature annealed AlN templates by adopting an AlN/AlGaN stress modulation multilayer

Includes: Supplementary data

Journal Articles

High speed surface acoustic wave and laterally excited bulk wave resonator based on single-crystal non-polar AlN film

Tongxin Lu, Xiaoli Fang, Shibin Zhang, Ye Yuan, Yanda Ji, Hongmeng Zhang, Anli Yang, Hengyi Yin, Pengcheng Zheng, Liping Zhang, Jinbo Wu, Tai Li, Wei Luo, Tiangui You, Xin Ou, Xinqiang Wang

Appl. Phys. Lett. 123, 252105 (2023)

https://doi.org/10.1063/5.0181087

Published: December 2023

View article titled, High speed surface acoustic wave and laterally excited bulk wave resonator based on single-crystal non-polar AlN film

Includes: Supplementary data

Journal Articles

Effect of the alloyed interlayer on the thermal conductance of Al/GaN interface

Qinshu Li, Fang Liu, Yizhe Liu, Tao Wang, Xinqiang Wang, Bo Sun

J. Appl. Phys. 134, 230901 (2023)

https://doi.org/10.1063/5.0179275

Published: December 2023

View article titled, Effect of the alloyed interlayer on the thermal conductance of Al/GaN interface

Journal Articles

RF loss reduction by a carbon-regulated Si substrate engineering in GaN-based HEMT buffer stacks

Zidong Cai, Xuelin Yang, Zhaohua Shen, Cheng Ma, Zhenghao Chen, Danshuo Liu, Fujun Xu, Ning Tang, Xinqiang Wang, Weikun Ge, Bo Shen

Appl. Phys. Lett. 123, 042102 (2023)

https://doi.org/10.1063/5.0156496

Published: July 2023

View article titled, RF loss reduction by a carbon-regulated Si substrate engineering in GaN-based HEMT buffer stacks

Includes: Supplementary data

Journal Articles

High mobility GaN drift layer on Si substrates: The role of surface N vacancy on carbon incorporation

Zhenghao Chen, Xuelin Yang, Danshuo Liu, Zidong Cai, Huayang Huang, Liwen Sang, Fujun Xu, Xinqiang Wang, Weikun Ge, Bo Shen

Appl. Phys. Lett. 123, 022101 (2023)

https://doi.org/10.1063/5.0157541

Published: July 2023

View article titled, High mobility GaN drift layer on Si substrates: The role of surface N vacancy on carbon incorporation

Journal Articles

Determination of C_N deep donor level in p-GaN with heavy Mg doping via a carrier statistics approach

Huayang Huang, Xuelin Yang, Zhaohua Shen, Zhenghao Chen, Ning Tang, Fujun Xu, Xinqiang Wang, Weikun Ge, Bo Shen

J. Appl. Phys. 133, 125706 (2023)

https://doi.org/10.1063/5.0128182

Published: March 2023

View article titled, Determination of CN deep donor level in p-GaN with heavy Mg doping via a carrier statistics approach

Journal Articles

Mechanism for self-compensation in heavily carbon doped GaN

Zhaohua Shen, Xuelin Yang, Shan Wu, Huayang Huang, Xiaolan Yan, Ning Tang, Fujun Xu, Xinqiang Wang, Weikun Ge, Bing Huang, Bo Shen

AIP Advances 13, 035026 (2023)

https://doi.org/10.1063/5.0133421

Published: March 2023

View article titled, Mechanism for self-compensation in heavily carbon doped GaN

Journal Articles

Planar AlN/GaN resonant tunneling diodes fabricated using nitrogen ion implantation

Baoqing Zhang, Liuyun Yang, Ding Wang, Kai Cheng, Bowen Sheng, Zhiwen Liang, Ye Yuan, Bo Shen, Xinqiang Wang

Appl. Phys. Lett. 122, 062104 (2023)

https://doi.org/10.1063/5.0133718

Published: February 2023

View article titled, Planar AlN/GaN resonant tunneling diodes fabricated using nitrogen ion implantation

Includes: Supplementary data

Journal Articles

Identification of carbon location in p-type GaN: Synchrotron x-ray absorption spectroscopy and theory

Huayang Huang, Xiaolan Yan, Xuelin Yang, Wensheng Yan, Zeming Qi, Shan Wu, Zhaohua Shen, Ning Tang, Fujun Xu, Xinqiang Wang, Weikun Ge, Bing Huang, Bo Shen

Appl. Phys. Lett. 121, 252101 (2022)

https://doi.org/10.1063/5.0132130

Published: December 2022

View article titled, Identification of carbon location in p-type GaN: Synchrotron x-ray absorption spectroscopy and theory

Includes: Supplementary data

Journal Articles

Repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown on silicon

Baoqing Zhang, Liuyun Yang, Ding Wang, Patrick Quach, Shanshan Sheng, Duo Li, Tao Wang, Bowen Sheng, Tai Li, Jiajia Yang, Ye Yuan, Bo Shen, Xinqiang Wang

Appl. Phys. Lett. 121, 192107 (2022)

https://doi.org/10.1063/5.0127379

Published: November 2022

View article titled, Repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown on silicon

Journal Articles

Carbon doped semi-insulating freestanding GaN crystals by ethylene

Qiang Liu, Marcin Zając, Małgorzata Iwińska, Shuai Wang, Wenrong Zhuang, Michał Boćkowski, Xinqiang Wang

Appl. Phys. Lett. 121, 172103 (2022)

https://doi.org/10.1063/5.0118250

Published: October 2022

View article titled, Carbon doped semi-insulating freestanding GaN crystals by ethylene

Includes: Supplementary data

Journal Articles

Modulation bandwidth improvement of GaN-based green micro-LEDs array by polarization-induced p-type doping

Zhen Huang, Renchun Tao, Duo Li, Zexing Yuan, Tai Li, Zhaoying Chen, Ye Yuan, Junjie Kang, Zhiwen Liang, Qi Wang, Pengfei Tian, Bo Shen, Xinqiang Wang

Appl. Phys. Lett. 121, 031101 (2022)

https://doi.org/10.1063/5.0098321

Published: July 2022

View article titled, Modulation bandwidth improvement of GaN-based green micro-LEDs array by polarization-induced p-type doping

Includes: Supplementary data

Journal Articles

Influence of intrinsic or extrinsic doping on charge state of carbon and its interaction with hydrogen in GaN

Shan Wu, Xuelin Yang, Zhenxing Wang, Zhongwen Ouyang, Huayang Huang, Qing Zhang, Qiuyu Shang, Zhaohua Shen, Fujun Xu, Xinqiang Wang, Weikun Ge, Bo Shen

Appl. Phys. Lett. 120, 242101 (2022)

https://doi.org/10.1063/5.0093514

Published: June 2022

View article titled, Influence of intrinsic or extrinsic doping on charge state of carbon and its interaction with hydrogen in GaN

Journal Articles

Ultra-thin AlGaN/GaN HFET with a high breakdown voltage on sapphire substrates

Zhiwen Liang, Hanghai Du, Ye Yuan, Qi Wang, Junjie Kang, Hong Zhou, Jincheng Zhang, Yue Hao, Xinqiang Wang, Guoyi Zhang

Appl. Phys. Lett. 119, 252101 (2021)

https://doi.org/10.1063/5.0074453

Published: December 2021

View article titled, Ultra-thin AlGaN/GaN HFET with a high breakdown voltage on sapphire substrates

Journal Articles

Transferable room-temperature single-photon emitters in hexagonal boron nitride grown by molecular beam epitaxy

Chao Lyu, Fang Liu, Zhihao Zang, Tingting Wang, Yanping Li, Xiaolong Xu, Xinqiang Wang, Yu Ye

AIP Advances 11, 115101 (2021)

https://doi.org/10.1063/5.0063594

Published: November 2021

View article titled, Transferable room-temperature single-photon emitters in hexagonal boron nitride grown by molecular beam epitaxy

Includes: Supplementary data

Journal Articles

High-mobility n⁻-GaN drift layer grown on Si substrates

Jianfei Shen, Xuelin Yang, Huayang Huang, Danshuo Liu, Zidong Cai, Zhenghao Chen, Cheng Ma, Fujun Xu, Liwen Sang, Xinqiang Wang, Weikun Ge, Bo Shen

Appl. Phys. Lett. 118, 222106 (2021)

https://doi.org/10.1063/5.0049133

Published: June 2021

View article titled, High-mobility n−-GaN drift layer grown on Si substrates

Journal Articles

Control of dislocations in heteroepitaxial AlN films by extrinsic supersaturated vacancies introduced through thermal desorption of heteroatoms

Jiaming Wang, Fujun Xu, Baiyin Liu, Jing Lang, Na Zhang, Xiangning Kang, Zhixin Qin, Xuelin Yang, Xinqiang Wang, Weikun Ge, Bo Shen

Appl. Phys. Lett. 118, 162103 (2021)

https://doi.org/10.1063/5.0045552

Published: April 2021

View article titled, Control of dislocations in heteroepitaxial AlN films by extrinsic supersaturated vacancies introduced through thermal desorption of heteroatoms

Includes: Supplementary data

Journal Articles

Interfacial symmetry breaking induced spin-orbit coupling in wurtzite GaN nanowires

Xingchen Liu, Hongming Guan, Ning Tang, Yuanjie Lv, Ling Chen, Xiaoyue Zhang, Shixiong Zhang, Yunfan Zhang, Xinqiang Wang, Weikun Ge, Bo Shen

Appl. Phys. Lett. 118, 122104 (2021)

https://doi.org/10.1063/5.0042776

Published: March 2021

View article titled, Interfacial symmetry breaking induced spin-orbit coupling in wurtzite GaN nanowires

NARROW

Topics

ScAlInN/GaN heterostructures grown by molecular beam epitaxy

Significant conductivity enhancement in Al-rich n-AlGaN by modulation doping

Elimination of spiral hillocks in AlGaN grown on high-temperature annealed AlN templates by adopting an AlN/AlGaN stress modulation multilayer

High speed surface acoustic wave and laterally excited bulk wave resonator based on single-crystal non-polar AlN film

Effect of the alloyed interlayer on the thermal conductance of Al/GaN interface

RF loss reduction by a carbon-regulated Si substrate engineering in GaN-based HEMT buffer stacks

High mobility GaN drift layer on Si substrates: The role of surface N vacancy on carbon incorporation

Determination of C_N deep donor level in p-GaN with heavy Mg doping via a carrier statistics approach

Mechanism for self-compensation in heavily carbon doped GaN

Planar AlN/GaN resonant tunneling diodes fabricated using nitrogen ion implantation

Identification of carbon location in p-type GaN: Synchrotron x-ray absorption spectroscopy and theory

Repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown on silicon

Carbon doped semi-insulating freestanding GaN crystals by ethylene

Modulation bandwidth improvement of GaN-based green micro-LEDs array by polarization-induced p-type doping

Influence of intrinsic or extrinsic doping on charge state of carbon and its interaction with hydrogen in GaN

Ultra-thin AlGaN/GaN HFET with a high breakdown voltage on sapphire substrates

Transferable room-temperature single-photon emitters in hexagonal boron nitride grown by molecular beam epitaxy

High-mobility n⁻-GaN drift layer grown on Si substrates

Control of dislocations in heteroepitaxial AlN films by extrinsic supersaturated vacancies introduced through thermal desorption of heteroatoms

Interfacial symmetry breaking induced spin-orbit coupling in wurtzite GaN nanowires

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