Page 1 | Search Results | AIP Publishing

1-20 of 31

Sort by

Sort Order Select

Journal Articles

An AlN/Al_xGa_1-_xN/GaN graded channel HEMT with enhanced power and linearity performance

Xiang Du, Min-Han Mi, Peng-Fei Wang, Mao-Teng Lu, Yu-Wei Zhou, Can Gong, Xiao-Ping Ouyang, Xiao-Hua Ma, Yue Hao

Appl. Phys. Lett. 126, 073501 (2025)

https://doi.org/10.1063/5.0245073

Published: February 2025

View article titled, An AlN/AlxGa1-xN/GaN graded channel HEMT with enhanced power and linearity performance

Journal Articles

Quasi-2D high mobility channel E-mode β -Ga₂O₃ MOSFET with Johnson FOM of 7.56 THz·V

Xi-Chen Wang, Xiao-Li Lu, Yun-Long He, Fang Zhang, Yu Shao, Peng Liu, Zhi-Nan Zhang, Xue-Feng Zheng, Wei-Wei Chen, Lei Wang, Jun Yang, Xiao-Hua Ma, Yue Hao

Appl. Phys. Lett. 125, 063505 (2024)

https://doi.org/10.1063/5.0223330

Published: August 2024

View article titled, Quasi-2D high mobility channel E-mode β -Ga2O3 MOSFET with Johnson FOM of 7.56 THz·V

Journal Articles

On-state performance enhancement of AlGaN/GaN Fin-HEMTs by using arcuate sidewalls

Yi-Lin Chen, Qing Zhu, Meng Zhang, Min-Han Mi, Jie-Jie Zhu, Si-Yin Guo, Yu-Wei Zhou, Peng-Fei Wang, Can Gong, Zi-Yue Zhao, Xiao-Hua Ma

Appl. Phys. Lett. 125, 063502 (2024)

https://doi.org/10.1063/5.0209130

Published: August 2024

View article titled, On-state performance enhancement of AlGaN/GaN Fin-HEMTs by using arcuate sidewalls

Journal Articles

Study on geometry-dependent n⁺-InGaN regrowth via MOCVD for AlN/GaN ohmic contact application

Yu-Xi Zhou, Jie-Jie Zhu, Jing-Shu Guo, Ling-Jie Qin, Bo-Wen Zhang, Meng-Di Li, Ming-Chen Zhang, Xiao-Hua Ma

J. Vac. Sci. Technol. B 42, 052201 (2024)

https://doi.org/10.1116/6.0003690

Published: August 2024

View article titled, Study on geometry-dependent n+-InGaN regrowth via MOCVD for AlN/GaN ohmic contact application

Journal Articles

Enhanced performance of Ku-band GaN MMIC PA through embedded microfluidic cooling

Wen Hong, Li Zhang, Chao Zhang, Fang Zhang, Shao-Zhong Yue, Peng-Bo Du, Xue-Feng Zheng, Xiao-Hua Ma, Yue Hao

Appl. Phys. Lett. 124, 182203 (2024)

https://doi.org/10.1063/5.0201666

Published: May 2024

View article titled, Enhanced performance of Ku-band GaN MMIC PA through embedded microfluidic cooling

Journal Articles

A thorough study on the electrical performance change and trap evolution of AlGaN/GaN MIS-HEMTs under proton irradiation

Tian Zhu, Xue-Feng Zheng, Tai-Xu Yin, Hao Zhang, Xiao-Hu Wang, Shao-Zhong Yue, Tan Wang, Tao Han, Xiao-Hua Ma, Yue Hao

Appl. Phys. Lett. 122, 183502 (2023)

https://doi.org/10.1063/5.0146638

Published: May 2023

View article titled, A thorough study on the electrical performance change and trap evolution of AlGaN/GaN MIS-HEMTs under proton irradiation

Journal Articles

Research on the β-Ga₂O₃ Schottky barrier diodes with oxygen-containing plasma treatment

Yun-Long He, Bai-Song Sheng, Yue-Hua Hong, Peng Liu, Xiao-Li Lu, Fang Zhang, Xi-Chen Wang, Yuan Li, Xue-Feng Zheng, Xiao-Hua Ma, Yue Hao

Appl. Phys. Lett. 122, 163503 (2023)

https://doi.org/10.1063/5.0145659

Published: April 2023

View article titled, Research on the β-Ga2O3 Schottky barrier diodes with oxygen-containing plasma treatment

Journal Articles

Leakage current reduction in β-Ga₂O₃ Schottky barrier diode with p-NiO_x guard ring

Yue-Hua Hong, Xue-Feng Zheng, Yun-Long He, Hao Zhang, Zi-Jian Yuan, Xiang-Yu Zhang, Fang Zhang, Ying-Zhe Wang, Xiao-Li Lu, Wei Mao, Xiao-Hua Ma, Yue Hao

Appl. Phys. Lett. 121, 212102 (2022)

https://doi.org/10.1063/5.0128736

Published: November 2022

View article titled, Leakage current reduction in β-Ga2O3 Schottky barrier diode with p-NiOx guard ring

Includes: Supplementary data

Journal Articles

Optimization of linearity at high electrical field for dual threshold coupling AlGaN/GaN HEMT applied in Ka-band applications

Peng-Fei Wang, Min-Han Mi, Xiang Du, Yu-Wei Zhou, Jie-Long Liu, Zhi-Hong Chen, Si-Rui An, Yi-Lin Chen, Jie-Jie Zhu, Xue-Feng Zheng, Xiao-Hua Ma, Yue Hao

Appl. Phys. Lett. 121, 072110 (2022)

https://doi.org/10.1063/5.0096542

Published: August 2022

View article titled, Optimization of linearity at high electrical field for dual threshold coupling AlGaN/GaN HEMT applied in Ka-band applications

Journal Articles

AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade

Hao Lu, Ling Yang, Bin Hou, Meng Zhang, Mei Wu, Xiao-Hua Ma, Yue Hao

Appl. Phys. Lett. 120, 173502 (2022)

https://doi.org/10.1063/5.0088585

Published: April 2022

View article titled, AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade

Journal Articles

Structural and thermal analysis of polycrystalline diamond thin film grown on GaN-on-SiC with an interlayer of 20 nm PECVD-SiN

Mei Wu, Ke Cheng, Ling Yang, Bin Hou, Xin-Chuang Zhang, Ping Wang, Meng Zhang, Qing Zhu, Xue-Feng Zheng, Yan-Sheng Hu, Xiao-Hua Ma, Yue Hao

Appl. Phys. Lett. 120, 121603 (2022)

https://doi.org/10.1063/5.0083841

Published: March 2022

View article titled, Structural and thermal analysis of polycrystalline diamond thin film grown on GaN-on-SiC with an interlayer of 20 nm PECVD-SiN

Includes: Supplementary data

Journal Articles

Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V f_max·V_BK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates

Peng-Fei Wang, Min-Han Mi, Meng Zhang, Qing Zhu, Jie-Jie Zhu, Yu-Wei Zhou, Jun-Wen Chen, Yi-Lin Chen, Jie-Long Liu, Ling Yang, Bin Hou, Xiao-Hua Ma, Yue Hao

Appl. Phys. Lett. 120, 102103 (2022)

https://doi.org/10.1063/5.0080320

Published: March 2022

View article titled, Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V fmax·VBK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates

Journal Articles

8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer

Jie-Long Liu, Jie-Jie Zhu, Min-Han Mi, Qing Zhu, Si-Yu Liu, Peng-Fei Wang, Yu-Wei Zhou, Zi-Yue Zhao, Jiu-Ding Zhou, Meng Zhang, Mei Wu, Bin Hou, Hong Wang, Ling Yang, Xiao-Hua Ma, Yue Hao

Appl. Phys. Lett. 120, 052101 (2022)

https://doi.org/10.1063/5.0080120

Published: January 2022

View article titled, 8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer

Journal Articles

The optimized interface characteristics of β -Ga₂O₃ Schottky barrier diode with low temperature annealing

Yue-Hua Hong, Xue-Feng Zheng, Yun-Long He, Fang Zhang, Xiang-Yu Zhang, Xi-Chen Wang, Jia-Ning Li, Dang-Po Wang, Xiao-Li Lu, Hong-Bo Han, Xiao-Hua Ma, Yue Hao

Appl. Phys. Lett. 119, 132103 (2021)

https://doi.org/10.1063/5.0063458

Published: September 2021

View article titled, The optimized interface characteristics of β -Ga2O3 Schottky barrier diode with low temperature annealing

Journal Articles

Proton irradiation impact on interface traps under Schottky contact in AlGaN/GaN heterostructure

Xue-Feng Zheng, Guan-Jun Chen, Xiao-Hu Wang, Ying-Zhe Wang, Chong Wang, Wei Mao, Yang Lu, Bin Hou, Min-Han Mi, Ling Lv, Yan-Rong Cao, Qing Zhu, Gang Guo, Pei-Jun Ma, Xiao-Hua Ma, Yue Hao

AIP Advances 10, 065111 (2020)

https://doi.org/10.1063/5.0007650

Published: June 2020

View article titled, Proton irradiation impact on interface traps under Schottky contact in AlGaN/GaN heterostructure

Journal Articles

Degradation in AlGaN-based UV-C LEDs under constant current stress: A study on defect behaviors

Ying-Zhe Wang, Xue-Feng Zheng, Jia-Duo Zhu, Lin-Lin Xu, Sheng-Rui Xu, Ren-Li Liang, Jiang-Nan Dai, Pei-Xian Li, Xiao-Wei Zhou, Wei Mao, Jin-Cheng Zhang, Xiao-Hua Ma, Yue Hao

Appl. Phys. Lett. 116, 203501 (2020)

https://doi.org/10.1063/5.0010540

Published: May 2020

View article titled, Degradation in AlGaN-based UV-C LEDs under constant current stress: A study on defect behaviors

Journal Articles

Investigation of the nanochannel geometry modulation on self-heating in AlGaN/GaN Fin-HEMTs on Si

Mei Wu, Xiao-Hua Ma, Ling Yang, Meng Zhang, Qing Zhu, Xin-Chuang Zhang, Bin Hou, Xue-Feng Zheng, Yue Hao

Appl. Phys. Lett. 115, 083505 (2019)

https://doi.org/10.1063/1.5111607

Published: August 2019

View article titled, Investigation of the nanochannel geometry modulation on self-heating in AlGaN/GaN Fin-HEMTs on Si

Journal Articles

Terahertz monolithic integrated waveguide transmission lines based on wide bandgap semiconductor materials

Yang Li, Xiao-Hua Ma, Lin-An Yang, Jin-Ping Ao, Yue Hao

J. Appl. Phys. 125, 151616 (2019)

https://doi.org/10.1063/1.5083097

Published: April 2019

View article titled, Terahertz monolithic integrated waveguide transmission lines based on wide bandgap semiconductor materials

Journal Articles

Record combination f_max · V_br of 25 THz·V in AlGaN/GaN HEMT with plasma treatment

Min-Han Mi, Xiao-Hua Ma, Ling Yang, Yang Lu, Bin Hou, Meng Zhang, Heng-Shuang Zhang, Sheng Wu, Yue Hao

AIP Advances 9, 045212 (2019)

https://doi.org/10.1063/1.5090528

Published: April 2019

View article titled, Record combination fmax · Vbr of 25 THz·V in AlGaN/GaN HEMT with plasma treatment

Journal Articles

Effect of thickness of metal electrode on the performance of SiN_x-based resistive switching devices

Zhen Fei Zhang, Hai Xia Gao, Mei Yang, Peng Fei Jiang, Xiao Hua Ma, Yin Tang Yang

Appl. Phys. Lett. 114, 042102 (2019)

https://doi.org/10.1063/1.5062597

Published: January 2019

View article titled, Effect of thickness of metal electrode on the performance of SiNx-based resistive switching devices

Includes: Supplementary data

NARROW

Topics

An AlN/Al_xGa_1-_xN/GaN graded channel HEMT with enhanced power and linearity performance

Quasi-2D high mobility channel E-mode β -Ga₂O₃ MOSFET with Johnson FOM of 7.56 THz·V

On-state performance enhancement of AlGaN/GaN Fin-HEMTs by using arcuate sidewalls

Study on geometry-dependent n⁺-InGaN regrowth via MOCVD for AlN/GaN ohmic contact application

Enhanced performance of Ku-band GaN MMIC PA through embedded microfluidic cooling

A thorough study on the electrical performance change and trap evolution of AlGaN/GaN MIS-HEMTs under proton irradiation

Research on the β-Ga₂O₃ Schottky barrier diodes with oxygen-containing plasma treatment

Leakage current reduction in β-Ga₂O₃ Schottky barrier diode with p-NiO_x guard ring

Optimization of linearity at high electrical field for dual threshold coupling AlGaN/GaN HEMT applied in Ka-band applications

AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade

Structural and thermal analysis of polycrystalline diamond thin film grown on GaN-on-SiC with an interlayer of 20 nm PECVD-SiN

Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V f_max·V_BK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates

8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer

The optimized interface characteristics of β -Ga₂O₃ Schottky barrier diode with low temperature annealing

Proton irradiation impact on interface traps under Schottky contact in AlGaN/GaN heterostructure

Degradation in AlGaN-based UV-C LEDs under constant current stress: A study on defect behaviors

Investigation of the nanochannel geometry modulation on self-heating in AlGaN/GaN Fin-HEMTs on Si

Terahertz monolithic integrated waveguide transmission lines based on wide bandgap semiconductor materials

Record combination f_max · V_br of 25 THz·V in AlGaN/GaN HEMT with plasma treatment

Effect of thickness of metal electrode on the performance of SiN_x-based resistive switching devices

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only