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Journal Articles

An E-band multi-channel Doppler backscattering system on EAST

S. Liu, C. Zhou, A. D. Liu, G. Zhuang, X. Feng, J. Zhang, X. M. Zhong, J. X. Ji, S. B. Zhang, H. Q. Liu, S. X. Wang, H. R. Fan, S. F. Wang, L. T. Gao, W. X. Shi, X. Y. Chen, W. D. Liu
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 94, 123507 (2023)
https://doi.org/10.1063/5.0166949
Published: December 2023
View article titled, An E-band multi-channel Doppler backscattering system on EAST
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Journal Articles

Mid-infrared emissions from In(Ga)As quantum wells grown on GaP/Si(001) substrates

Y. Gu, W. G. Huang, J. Zhang, X. Y. Chen, Y. J. Ma, H. Huang, G. X. He, Y. G. Zhang
Journal: AIP Advances
AIP Advances 8, 125318 (2018)
https://doi.org/10.1063/1.5051062
Published: December 2018
View article titled, Mid-infrared emissions from In(Ga)As quantum wells grown on GaP/Si(001) substrates
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Journal Articles

3 μm InAs quantum well lasers at room temperature on InP

W. Y. Ji, Y. Gu, J. Zhang, Y. J. Ma, X. Y. Chen, Q. Gong, W. G. Huang, Y. H. Shi, G. X. He, H. Huang, Y. G. Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 232103 (2018)
https://doi.org/10.1063/1.5050175
Published: December 2018
View article titled, 3 <em>μ</em>m InAs quantum well lasers at room temperature on InP
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Journal Articles

Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy

Y. J. Ma, Y. G. Zhang, Y. Gu, S. P. Xi, X. Y. Chen, Baolai Liang, Bor-Chau Juang, Diana L. Huffaker, B. Du, X. M. Shao, J. X. Fang
Journal: AIP Advances
AIP Advances 7, 075117 (2017)
https://doi.org/10.1063/1.4989884
Published: July 2017
View article titled, Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy
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Journal Articles

Synthesis of nitrogen-doped graphene via pentachloropyridine as the sole solid source

J. X. Wan, Y. You, Y. L. Xu, C. Wang, P. B. Zhang, X. Y. Jiang, X. H. Fang, L. Y. Yang, X. Y. Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 033106 (2017)
https://doi.org/10.1063/1.4995228
Published: July 2017
View article titled, Synthesis of nitrogen-doped graphene via pentachloropyridine as the sole solid source
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Journal Articles

Effects of growth conditions on the quality of B-doped graphene films

Y. You, C. Wang, Y. L. Xu, J. X. Wan, W. Ren, X. H. Fang, X. Y. Chen
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 025305 (2017)
https://doi.org/10.1063/1.4974010
Published: January 2017
View article titled, Effects of growth conditions on the quality of B-doped graphene films
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Journal Articles

Cooperative dissociations of misfit dislocations at bimetal interfaces

K. Liu, R. F. Zhang, I. J. Beyerlein, X. Y. Chen, H. Yang, T. C. Germann
Journal: APL Materials
APL Mater. 4, 111101 (2016)
https://doi.org/10.1063/1.4967207
Published: November 2016
View article titled, Cooperative dissociations of misfit dislocations at bimetal interfaces
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Includes: Supplementary data
Journal Articles

Metamorphic InAs1-xBix/In0.83Al0.17As quantum well structures on InP for mid-infrared emission

Y. Gu, Y. G. Zhang, X. Y. Chen, Y. J. Ma, S. P. Xi, B. Du, W. Y. Ji, Y. H. Shi
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 122102 (2016)
https://doi.org/10.1063/1.4963129
Published: September 2016
View article titled, Metamorphic InAs<sub>1-x</sub>Bi<sub>x</sub>/In<sub>0.83</sub>Al<sub>0.17</sub>As quantum well structures on InP for mid-infrared emission
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Journal Articles

Characteristics of InGaAsBi with various lattice mismatches on InP substrate

X. Y. Chen, Y. Gu, Y. G. Zhang, S. P. Xi, B. Du, Y. J. Ma, W. Y. Ji, Y. H. Shi
Journal: AIP Advances
AIP Advances 6, 075215 (2016)
https://doi.org/10.1063/1.4959896
Published: July 2016
View article titled, Characteristics of InGaAsBi with various lattice mismatches on InP substrate
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Journal Articles

Nearly lattice-matched short-wave infrared InGaAsBi detectors on InP

Y. Gu, Y. G. Zhang, X. Y. Chen, Y. J. Ma, S. P. Xi, B. Du, Hsby. Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 032102 (2016)
https://doi.org/10.1063/1.4940201
Published: January 2016
View article titled, Nearly lattice-matched short-wave infrared InGaAsBi detectors on InP
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Journal Articles

Effect of bismuth surfactant on InP-based highly strained InAs/InGaAs triangular quantum wells

Y. Gu, Y. G. Zhang, X. Y. Chen, S. P. Xi, B. Du, Y. J. Ma
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 212104 (2015)
https://doi.org/10.1063/1.4936379
Published: November 2015
View article titled, Effect of bismuth surfactant on InP-based highly strained InAs/InGaAs triangular quantum wells
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Journal Articles

InP-based type-I quantum well lasers up to 2.9 μm at 230 K in pulsed mode on a metamorphic buffer

Y. Gu, Y. G. Zhang, Y. J. Ma, L. Zhou, X. Y. Chen, S. P. Xi, B. Du
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 121102 (2015)
https://doi.org/10.1063/1.4916270
Published: March 2015
View article titled, InP-based type-I quantum well lasers up to 2.9 <em>μ</em>m at 230 K in pulsed mode on a metamorphic buffer
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Journal Articles

Fabrication of large-area 3D optical fishnet metamaterial by laser interference lithography

Y. Zhou, X. Y. Chen, Y. H. Fu, G. Vienne, A. I. Kuznetsov, B. Luk’yanchuk
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 123116 (2013)
https://doi.org/10.1063/1.4821508
Published: September 2013
View article titled, Fabrication of large-area 3D optical fishnet metamaterial by laser interference lithography
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Journal Articles

2.7 μm InAs quantum well lasers on InP-based InAlAs metamorphic buffer layers

Y. Y. Cao, Y. G. Zhang, Y. Gu, X. Y. Chen, L. Zhou, Hsby Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 201111 (2013)
https://doi.org/10.1063/1.4807671
Published: May 2013
View article titled, 2.7 <em>μ</em>m InAs quantum well lasers on InP-based InAlAs metamorphic buffer layers
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Journal Articles

InAs/In0.83Al0.17As quantum wells on GaAs substrate with type-I emission at 2.9 μm

Y. Gu, Y. G. Zhang, X. Y. Chen, Y. Y. Cao, X. Fang, G. Q. Ding, L. Zhou
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 121110 (2013)
https://doi.org/10.1063/1.4798558
Published: March 2013
View article titled, InAs/In<sub>0.83</sub>Al<sub>0.17</sub>As quantum wells on GaAs substrate with type-I emission at 2.9 <em>μ</em>m
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Journal Articles

Erratum: “Electrical properties of ZnO nanorods studied by conductive atomic force microscopy” [J. Appl. Phys. 110, 052005 (2011)]

I. Beinik, M. Kratzer, A. Wachauer, L. Wang, R. T. Lechner, C. Teichert, C. Motz, W. Anwand, G. Brauer, X. Y. Chen, Y. F. Hsu, A. B. Djurišić
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 079903 (2012)
https://doi.org/10.1063/1.4758293
Published: October 2012
View article titled, Erratum: “Electrical properties of ZnO nanorods studied by conductive atomic force microscopy” [J. Appl. Phys. 110, 052005 (2011)]
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Journal Articles

P‐GaN/ZnO nanorod heterojunction LEDs—effect of carrier concentration in p‐GaN

A. M. C. Ng, X. Y. Chen, F. Fang, A. B. Djurišić, W. K. Chan, K. W. Cheah
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1399, 579–580 (2011)
https://doi.org/10.1063/1.3666512
Published: December 2011
View article titled, P‐GaN/ZnO nanorod heterojunction LEDs—effect of carrier concentration in p‐GaN
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Journal Articles

Effect of zinc precursor on the morphology and optical properties of ZnO nanostructures prepared by electrodeposition

F. Fang, A. M. C. Ng, X. Y. Chen, A. B. Djurišić, W. K. Chan
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1399, 251–252 (2011)
https://doi.org/10.1063/1.3666349
Published: December 2011
View article titled, Effect of zinc precursor on the morphology and optical properties of ZnO nanostructures prepared by electrodeposition
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Journal Articles

Continuous Liquid Lifting Experiment for the Gas Well with High Gas‐liquid Ratio

N. Wei, Y. F. Meng, Y. Q. Li, X. Y. Chen, Y. J. Li, L. P. Wan, W. B. Liu
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1376, 602–605 (2011)
https://doi.org/10.1063/1.3651989
Published: September 2011
View article titled, Continuous Liquid Lifting Experiment for the Gas Well with High Gas‐liquid Ratio
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Journal Articles

Electrical properties of ZnO nanorods studied by conductive atomic force microscopy

I. Beinik, M. Kratzer, A. Wachauer, L. Wang, R. T. Lechner, C. Teichert, C. Motz, W. Anwand, G. Brauer, X. Y. Chen, X. Y. Hsu, A. B. Djurišić
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 052005 (2011)
https://doi.org/10.1063/1.3623764
Published: September 2011
View article titled, Electrical properties of ZnO nanorods studied by conductive atomic force microscopy
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