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Journal Articles

Effects of the RF bias power of ICP etching on the electrical properties of n-type Ohmic contact on high-Al-fraction AlGaN

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X. Q. Guo, F. J. Xu, J. Lang, J. M. Wang, L. S. Zhang, C. Ji, C. Z. Ji, Z. Y. Zhang, F. Y. Tan, Y. Wu, X. N. Kang, X. L. Yang, N. Tang, X. Q. Wang, W. K. Ge, B. Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 082104 (2025)
https://doi.org/10.1063/5.0221287
Published: February 2025
View articletitled, Effects of the RF bias power of ICP etching on the electrical properties of n-type Ohmic contact on high-Al-fraction AlGaN
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Journal Articles

Luminescence efficiency and temperature quenching of spontaneous and stimulated emission in ultra-low dislocation density InN

Open Access
B. A. Andreev, K. E. Kudryavtsev, A. N. Yablonskiy, D. N. Lobanov, A. V. Novikov, H. P. Liu, B. Sheng, X. Q. Wang
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 025701 (2025)
https://doi.org/10.1063/5.0239375
Published: January 2025
View articletitled, Luminescence efficiency and temperature quenching of spontaneous and stimulated emission in ultra-low dislocation density InN
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Journal Articles

The composited high reflectivity p-type electrodes with patterned ITO for AlGaN-based ultraviolet light emitting diodes

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J. Lang, F. J. Xu, J. M. Wang, L. S. Zhang, Z. H. Sun, H. D. Zhang, X. Q. Guo, Z. Y. Zhang, C. Ji, F. Y. Tan, C. Z. Ji, X. N. Kang, X. L. Yang, N. Tang, Z. Z. Chen, X. Q. Wang, W. K. Ge, B. Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 012107 (2024)
https://doi.org/10.1063/5.0216179
Published: July 2024
View articletitled, The composited high reflectivity p-type electrodes with patterned ITO for AlGaN-based ultraviolet light emitting diodes
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Journal Articles

Influence of the barrier layer on the electrical properties of the V/Al-based Ohmic contact on n-type high-Al-fraction AlGaN

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X. Q. Guo, F. J. Xu, J. Lang, J. M. Wang, L. S. Zhang, Z. Y. Zhang, C. Ji, F. Y. Tan, C. Z. Ji, Y. Wu, X. N. Kang, N. Tang, X. Q. Wang, Z. X. Qin, W. K. Ge, B. Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 232106 (2024)
https://doi.org/10.1063/5.0208669
Published: June 2024
View articletitled, Influence of the barrier layer on the electrical properties of the V/Al-based Ohmic contact on n-type high-Al-fraction AlGaN
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Journal Articles

On the integrated p-type region free of electron blocking layer for AlGaN-based deep-ultraviolet light emitting diodes

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J. Lang, F. J. Xu, J. M. Wang, L. S. Zhang, C. Ji, X. Q. Guo, C. Z. Ji, Z. Y. Zhang, F. Y. Tan, X. Z. Fang, X. N. Kang, X. L. Yang, N. Tang, X. Q. Wang, W. K. Ge, B. Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 262103 (2023)
https://doi.org/10.1063/5.0175872
Published: December 2023
View articletitled, On the integrated p-type region free of electron blocking layer for AlGaN-based deep-ultraviolet light emitting diodes
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Includes: Supplementary data
Journal Articles

Investigation of MHD instabilities and related dynamic interactions during the major disruption in the HL-2A tokamak

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Y. C. Li, M. Jiang, Y. Xu, X. Q. Wang, S. L. Hu, G. Z. Hao, Z. B. Shi, R. H. Tong, J. Q. Xu, B. F. Zhang, Y. He
Journal: Physics of Plasmas
Phys. Plasmas 30, 062103 (2023)
https://doi.org/10.1063/5.0138657
Published: June 2023
View articletitled, Investigation of MHD instabilities and related dynamic interactions during the major disruption in the HL-2A tokamak
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Journal Articles

Effects of compressibility and guiding field on the Kelvin–Helmholtz instability in weakly reversed magnetic shear configurations

Open Access
Z. Li, X. Q. Wang, J. Huang, J. Shao, Y. Luo, Y. Xu, H. F. Liu, H. Liu
Journal: AIP Advances
AIP Advances 12, 095105 (2022)
https://doi.org/10.1063/5.0098313
Published: September 2022
View articletitled, Effects of compressibility and guiding field on the Kelvin–Helmholtz instability in weakly reversed magnetic shear configurations
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Journal Articles

Identification of electrostatic microinstability maps in quasi-axisymmetric stellarator

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J. Huang, M. Nakata, Y. Xu, A. Shimizu, M. Isobe, S. Okamura, H. F. Liu, X. Q. Wang, X. Zhang, H. Liu, J. Cheng, C. J. Tang
Journal: Physics of Plasmas
Phys. Plasmas 29, 052505 (2022)
https://doi.org/10.1063/5.0082107
Published: May 2022
View articletitled, Identification of electrostatic microinstability maps in quasi-axisymmetric stellarator
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Journal Articles

Improved Ohmic contacts to plasma etched high Al fraction n-AlGaN by active surface pretreatment

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N. Zhang, F. J. Xu, J. Lang, L. B. Wang, J. M. Wang, B. Y. Liu, X. Z. Fang, X. L. Yang, X. N. Kang, X. Q. Wang, Z. X. Qin, W. K. Ge, B. Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 222101 (2021)
https://doi.org/10.1063/5.0042621
Published: June 2021
View articletitled, Improved Ohmic contacts to plasma etched high Al fraction n-AlGaN by active surface pretreatment
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Includes: Supplementary data
Journal Articles

Full-composition-graded InxGa1−xN films grown by molecular beam epitaxy

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X. T. Zheng, T. Wang, P. Wang, X. X. Sun, D. Wang, Z. Y. Chen, P. Quach, Y. X. Wang, X. L. Yang, F. J. Xu, Z. X. Qin, T. J. Yu, W. K. Ge, B. Shen, X. Q. Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 182101 (2020)
https://doi.org/10.1063/5.0021811
Published: November 2020
View articletitled, Full-composition-graded InxGa1−xN films grown by molecular beam epitaxy
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Includes: Supplementary data
Journal Articles

Destabilization and nonlinear interaction of tearing modes in tokamak plasmas with locally reversed shear

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Y. C. Feng, X. Q. Wang, Y. Xu, H. F. Liu, J. Huang, X. Zhang, H. Liu, J. Cheng, C. J. Tang
Journal: Physics of Plasmas
Phys. Plasmas 27, 114501 (2020)
https://doi.org/10.1063/5.0021918
Published: November 2020
View articletitled, Destabilization and nonlinear interaction of tearing modes in tokamak plasmas with locally reversed shear
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Journal Articles

Controlled bunching approach for achieving high efficiency active region in AlGaN-based deep ultraviolet light-emitting devices with dual-band emission

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Y. H. Sun, F. J. Xu, N. Xie, J. M. Wang, N. Zhang, J. Lang, B. Y. Liu, X. Z. Fang, L. B. Wang, W. K. Ge, X. N. Kang, Z. X. Qin, X. L. Yang, X. Q. Wang, B. Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 212102 (2020)
https://doi.org/10.1063/5.0008339
Published: May 2020
View articletitled, Controlled bunching approach for achieving high efficiency active region in AlGaN-based deep ultraviolet light-emitting devices with dual-band emission
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Includes: Supplementary data
Journal Articles

A GaN/AlN quantum cascade detector with a broad response from the mid-infrared (4.1  μ m) to the visible (550 nm) spectral range

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P. Quach, S. F. Liu, A. Jollivet, D. Wang, J. Y. Cheng, N. Isac, S. Pirotta, D. Bouville, S. S. Sheng, A. Imran, L. Chen, D. Li, X. T. Zheng, Y. X. Wang, Z. X. Qin, M. Tchernycheva, F. H. Julien, B. Shen, X. Q. Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 171102 (2020)
https://doi.org/10.1063/5.0003615
Published: April 2020
View articletitled, A GaN/AlN quantum cascade detector with a broad response from the mid-infrared (4.1  μ m) to the visible (550 nm) spectral range
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Includes: Supplementary data
Journal Articles

Thermally annealed wafer-scale h-BN films grown on sapphire substrate by molecular beam epitaxy

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F. Liu, X. Rong, Y. Yu, T. Wang, B. W. Sheng, J. Q. Wei, S. F. Liu, J. J. Yang, F. Bertram, F. J. Xu, X. L. Yang, Z. H. Zhang, Z. X. Qin, Y. T. Zhang, B. Shen, X. Q. Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 142104 (2020)
https://doi.org/10.1063/5.0002101
Published: April 2020
View articletitled, Thermally annealed wafer-scale h-BN films grown on sapphire substrate by molecular beam epitaxy
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Includes: Supplementary data
Journal Articles

High performance of AlGaN deep-ultraviolet light emitting diodes due to improved vertical carrier transport by delta-accelerating quantum barriers

Editor’s PickAvailable to Purchase
J. Lang, F. J. Xu, W. K. Ge, B. Y. Liu, N. Zhang, Y. H. Sun, M. X. Wang, N. Xie, X. Z. Fang, X. N. Kang, Z. X. Qin, X. L. Yang, X. Q. Wang, B. Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 172105 (2019)
https://doi.org/10.1063/1.5093160
Published: May 2019
View articletitled, High performance of AlGaN deep-ultraviolet light emitting diodes due to improved vertical carrier transport by delta-accelerating quantum barriers
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Journal Articles

High-temperature annealing induced evolution of strain in AlN epitaxial films grown on sapphire substrates

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M. X. Wang, F. J. Xu, N. Xie, Y. H. Sun, B. Y. Liu, W. K. Ge, X. N. Kang, Z. X. Qin, X. L. Yang, X. Q. Wang, B. Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 112105 (2019)
https://doi.org/10.1063/1.5087547
Published: March 2019
View articletitled, High-temperature annealing induced evolution of strain in AlN epitaxial films grown on sapphire substrates
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Journal Articles

Repeatable asymmetric resonant tunneling in AlGaN/GaN double barrier structures grown on sapphire

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D. Wang, Z. Y. Chen, T. Wang, L. Y. Yang, B. W. Sheng, H. P. Liu, J. Su, P. Wang, X. Rong, J. Y. Cheng, X. Y. Shi, W. Tan, S. P. Guo, J. Zhang, W. K. Ge, B. Shen, X. Q. Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 073503 (2019)
https://doi.org/10.1063/1.5080470
Published: February 2019
View articletitled, Repeatable asymmetric resonant tunneling in AlGaN/GaN double barrier structures grown on sapphire
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Journal Articles

Domain wall resistance in a Co and Py transverse “coercivity heterostructures” configuration

Open Access
L. Wang, R. Y. Zhang, X. Q. Wang, W. T. Xu, W. L. Zhao, G. Li, Y. F. Liu
Journal: AIP Advances
AIP Advances 8, 015213 (2018)
https://doi.org/10.1063/1.5010773
Published: January 2018
View articletitled, Domain wall resistance in a Co and Py transverse “coercivity heterostructures” configuration
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Journal Articles

Surface-effect enhanced magneto-electric coupling in FePt/PMN-PT multiferroic heterostructures

Open Access
Y. T. Yang, J. Li, X. L. Peng, B. Hong, X. Q. Wang, H. L. Ge, D. H. Wang, Y. W. Du
Journal: AIP Advances
Series: Magnetism and Magnetic Materials
AIP Advances 7, 055833 (2017)
https://doi.org/10.1063/1.4978588
Published: March 2017
View articletitled, Surface-effect enhanced magneto-electric coupling in FePt/PMN-PT multiferroic heterostructures
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Journal Articles

Dynamically tracking the joule heating effect on the voltage induced metal-insulator transition in VO2 crystal film

Open Access
G. M. Liao, S. Chen, L. L. Fan, Y. L. Chen, X. Q. Wang, H. Ren, Z. M. Zhang, C. W. Zou
Journal: AIP Advances
AIP Advances 6, 045014 (2016)
https://doi.org/10.1063/1.4948311
Published: April 2016
View articletitled, Dynamically tracking the joule heating effect on the voltage induced metal-insulator transition in VO2 crystal film
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Includes: Supplementary data