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Journal Articles

Demonstration of higher-order topological States in photonic kagome lattice with next-nearest-neighbour coupling

D. Zhirihin, M. Li, M. Gorlach, X. Ni, D. Filonov, A. Slobozhanyuk, A. Alu, A. B. Khanikaev
Journal: AIP Conference Proceedings
AIP Conf. Proc. 2300, 020139 (2020)
https://doi.org/10.1063/5.0032066
Published: December 2020
View article titled, Demonstration of higher-order topological States in photonic kagome lattice with next-nearest-neighbour coupling
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Journal Articles

Acoustic emission during the millisecond laser-optical glass interaction assisted by the nanosecond laser

Y. Pan, Z. Wu, Y. Sun, H. Zhang, Z. Shen, J. Lu, X. Ni, B. Wang
Journal: AIP Advances
AIP Advances 8, 125324 (2018)
https://doi.org/10.1063/1.5053432
Published: December 2018
View article titled, Acoustic emission during the millisecond laser-optical glass interaction assisted by the nanosecond laser
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Journal Articles

Flexible and wearable 3D graphene sensor with 141 KHz frequency signal response capability

Editor’s Pick
R. Xu, H. Zhang, Y. Cai, J. Ruan, K. Qu, E. Liu, X. Ni, M. Lu, X. Dong
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 103501 (2017)
https://doi.org/10.1063/1.5001472
Published: September 2017
View article titled, Flexible and wearable 3D graphene sensor with 141 KHz frequency signal response capability
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Journal Articles

An instrument to measure mechanical up-conversion phenomena in metals in the elastic regime

G. Vajente, E. A. Quintero, X. Ni, K. Arai, E. K. Gustafson, N. A. Robertson, E. J. Sanchez, J. R. Greer, R. X. Adhikari
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 87, 065107 (2016)
https://doi.org/10.1063/1.4953114
Published: June 2016
View article titled, An instrument to measure mechanical up-conversion phenomena in metals in the elastic regime
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Journal Articles

A new route to graphene layers by selective laser ablation

S. Dhar, A. Roy Barman, G. X. Ni, X. Wang, X. F. Xu, Y. Zheng, S. Tripathy, Ariando, A. Rusydi, K. P. Loh, M. Rubhausen, A. H. Castro Neto, B. Őzyilmaz, T. Venkatesan
Journal: AIP Advances
AIP Advances 1, 022109 (2011)
https://doi.org/10.1063/1.3584204
Published: April 2011
View article titled, A new route to graphene layers by selective laser ablation
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Journal Articles

Dynamics of the plumes produced by ultrafast laser ablation of metals

T. Donnelly, J. G. Lunney, S. Amoruso, R. Bruzzese, X. Wang, X. Ni
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 043309 (2010)
https://doi.org/10.1063/1.3475149
Published: August 2010
View article titled, Dynamics of the plumes produced by ultrafast laser ablation of metals
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Journal Articles

InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates

M. Wu, J. H. Leach, X. Ni, X. Li, J. Xie, S. Doğan, Ü. Özgür, H. Morkoç, T. Paskova, E. Preble, K. R. Evans, Chang-Zhi Lu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, 908–911 (2010)
https://doi.org/10.1116/1.3481138
Published: August 2010
View article titled, InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates
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Journal Articles

Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them

X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, Ü. Özgür, H. Morkoç, A. Matulionis
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 033112 (2010)
https://doi.org/10.1063/1.3460271
Published: August 2010
View article titled, Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them
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Journal Articles

InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, Ü. Özgür, H. Morkoç, A. Matulionis, T. Paskova, G. Mulholland, K. R. Evans
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 031110 (2010)
https://doi.org/10.1063/1.3465658
Published: July 2010
View article titled, InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes
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Journal Articles

Spatially direct and indirect transitions of self-assembled GeSi/Si quantum dots studied by photoluminescence excitation spectroscopy

B. Adnane, K. F. Karlsson, G. V. Hansson, P. O. Holtz, W.-X. Ni
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 181107 (2010)
https://doi.org/10.1063/1.3424789
Published: May 2010
View article titled, Spatially direct and indirect transitions of self-assembled GeSi/Si quantum dots studied by photoluminescence excitation spectroscopy
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Journal Articles

Bias dependent two-channel conduction in InAlN/AlN/GaN structures

J. H. Leach, X. Ni, X. Li, M. Wu, Ü. Özgür, H. Morkoç, L. Zhou, D. A. Cullen, D. J. Smith, H. Cheng, Ç. Kurdak, J. R. Meyer, I. Vurgaftman
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 083706 (2010)
https://doi.org/10.1063/1.3330627
Published: April 2010
View article titled, Bias dependent two-channel conduction in InAlN/AlN/GaN structures
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Journal Articles

Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates

J. H. Leach, C. Y. Zhu, M. Wu, X. Ni, X. Li, J. Xie, Ü. Özgür, H. Morkoç, J. Liberis, E. Šermukšnis, A. Matulionis, T. Paskova, E. Preble, K. R. Evans
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 133505 (2010)
https://doi.org/10.1063/1.3358392
Published: March 2010
View article titled, Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates
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Journal Articles

Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates

J. H. Leach, M. Wu, X. Ni, X. Li, J. Xie, Ü. Özgür, H. Morkoç, T. Paskova, E. Preble, K. R. Evans, Chang-Zhi Lu
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 102109 (2010)
https://doi.org/10.1063/1.3358192
Published: March 2010
View article titled, Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates
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Journal Articles

Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons

J. H. Leach, C. Y. Zhu, M. Wu, X. Ni, X. Li, J. Xie, Ü. Özgür, H. Morkoç, J. Liberis, E. Šermukšnis, A. Matulionis, H. Cheng, Ç. Kurdak
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 223504 (2009)
https://doi.org/10.1063/1.3271183
Published: December 2009
View article titled, Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons
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Journal Articles

On carrier spillover in c- and m-plane InGaN light emitting diodes

J. Lee, X. Li, X. Ni, Ü. Özgür, H. Morkoç, T. Paskova, G. Mulholland, K. R. Evans
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 201113 (2009)
https://doi.org/10.1063/1.3266833
Published: November 2009
View article titled, On carrier spillover in c- and m-plane InGaN light emitting diodes
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Journal Articles

Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels

A. Matulionis, J. Liberis, I. Matulionienė, M. Ramonas, E. Šermukšnis, J. H. Leach, M. Wu, X. Ni, X. Li, H. Morkoç
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 192102 (2009)
https://doi.org/10.1063/1.3261748
Published: November 2009
View article titled, Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels
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Journal Articles

Efficiency retention at high current injection levels in m -plane InGaN light emitting diodes

X. Li, X. Ni, J. Lee, M. Wu, Ü. Özgür, H. Morkoç, T. Paskova, G. Mulholland, K. R. Evans
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 121107 (2009)
https://doi.org/10.1063/1.3236538
Published: September 2009
View article titled, Efficiency retention at high current injection levels in m -plane InGaN light emitting diodes
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Journal Articles

Nonpolar m -plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition

X. Ni, M. Wu, J. Lee, X. Li, A. A. Baski, Ü. Özgür, H. Morkoç
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 111102 (2009)
https://doi.org/10.1063/1.3225157
Published: September 2009
View article titled, Nonpolar m -plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition
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Journal Articles

Internal quantum efficiency of c -plane InGaN and m -plane InGaN on Si and GaN

X. Ni, J. Lee, M. Wu, X. Li, R. Shimada, Ü. Özgür, A. A. Baski, H. Morkoç, T. Paskova, G. Mulholland, K. R. Evans
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 101106 (2009)
https://doi.org/10.1063/1.3224192
Published: September 2009
View article titled, Internal quantum efficiency of c -plane InGaN and m -plane InGaN on Si and GaN
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Journal Articles

Double pulse ultrafast laser ablation of nickel in vacuum

T. Donnelly, J. G. Lunney, S. Amoruso, R. Bruzzese, X. Wang, X. Ni
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 013304 (2009)
https://doi.org/10.1063/1.3159010
Published: July 2009
View article titled, Double pulse ultrafast laser ablation of nickel in vacuum
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