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Journal Articles

Distribution of the built-in field extracted from switching dynamics in HfO₂-based ferroelectric capacitor

Xiaoyu Ke, Saifei Dai, Hao Xu, Junshuai Chai, Kai Han, Xiaolei Wang, Wenwu Wang

AIP Advances 14, 065010 (2024)

https://doi.org/10.1063/5.0208941

Published: June 2024

View article titled, Distribution of the built-in field extracted from switching dynamics in HfO2-based ferroelectric capacitor

Journal Articles

The physical origin of inhomogeneous field within HfO₂-based ferroelectric capacitor

Xiaoyu Ke, Saifei Dai, Hao Xu, Junshuai Chai, Xiaolei Wang, Wenwu Wang

Appl. Phys. Lett. 124, 102901 (2024)

https://doi.org/10.1063/5.0195170

Published: March 2024

View article titled, The physical origin of inhomogeneous field within HfO2-based ferroelectric capacitor

Includes: Supplementary data

Journal Articles

First-principles study of oxygen vacancy defects in orthorhombic Hf_0.5Zr_0.5O₂/SiO₂/Si gate stack

Junshuai Chai, Hao Xu, Jinjuan Xiang, Yuanyuan Zhang, Lixing Zhou, Shujing Zhao, Fengbin Tian, Jiahui Duan, Kai Han, Xiaolei Wang, Jun Luo, Wenwu Wang, Tianchun Ye, Yuzheng Guo

J. Appl. Phys. 132, 105301 (2022)

https://doi.org/10.1063/5.0106750

Published: September 2022

View article titled, First-principles study of oxygen vacancy defects in orthorhombic Hf0.5Zr0.5O2/SiO2/Si gate stack

Journal Articles

Impact of mobility degradation on endurance fatigue of FeFET with TiN/Hf_0.5Zr_0.5O₂/SiO_x/Si (MFIS) gate structure

Jiahui Duan, Hao Xu, Shujing Zhao, Fengbin Tian, Jinjuan Xiang, Kai Han, Tingting Li, Xiaolei Wang, Wenwu Wang, Tianchun Ye

J. Appl. Phys. 131, 134102 (2022)

https://doi.org/10.1063/5.0084816

Published: April 2022

View article titled, Impact of mobility degradation on endurance fatigue of FeFET with TiN/Hf0.5Zr0.5O2/SiOx/Si (MFIS) gate structure

Journal Articles

Identification of bulk and interface state-induced threshold voltage instability in metal/SiN_x(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy

Yixu Yao, Qimeng Jiang, Sen Huang, Xinhua Wang, Xiaorong Luo, Hao Jin, Fuqiang Guo, Haibo Yin, Jingyuan Shi, Haojie Jiang, Junfeng Li, Wenwu Wang, Bo Shen, Ke Wei, Xinyu Liu

Appl. Phys. Lett. 119, 233502 (2021)

https://doi.org/10.1063/5.0078367

Published: December 2021

View article titled, Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy

Journal Articles

Thermodynamic driving force of transient negative capacitance of ferroelectric capacitors

Yuanyuan Zhang, Xiaoqing Sun, Junshuai Chai, Hao Xu, Xueli Ma, Jinjuan Xiang, Kai Han, Xiaolei Wang, Wenwu Wang, Tianchun Ye

Appl. Phys. Lett. 119, 022901 (2021)

https://doi.org/10.1063/5.0039246

Published: July 2021

View article titled, Thermodynamic driving force of transient negative capacitance of ferroelectric capacitors

Journal Articles

High energy density and high efficiency achieved in the Ca_0.74Sr_0.26Zr_0.7Ti_0.3O₃ linear dielectric thin films on the silicon substrates

Xiaoyang Chen, Binbin Huang, Yun Liu, Wenwu Wang, Ping Yu

Appl. Phys. Lett. 117, 112902 (2020)

https://doi.org/10.1063/5.0024307

Published: September 2020

View article titled, High energy density and high efficiency achieved in the Ca0.74Sr0.26Zr0.7Ti0.3O3 linear dielectric thin films on the silicon substrates

Journal Articles

Capture and emission mechanisms of defect states at interface between nitride semiconductor and gate oxides in GaN-based metal-oxide-semiconductor power transistors

Sen Huang, Xinhua Wang, Xinyu Liu, Rui Zhao, Wen Shi, Yichuan Zhang, Jie Fan, Haibo Yin, Ke Wei, Yingkui Zheng, Jingyuan Shi, Xiaolei Wang, Wenwu Wang, Qian Sun, Kevin J. Chen

J. Appl. Phys. 126, 164505 (2019)

https://doi.org/10.1063/1.5125825

Published: October 2019

View article titled, Capture and emission mechanisms of defect states at interface between nitride semiconductor and gate oxides in GaN-based metal-oxide-semiconductor power transistors

Journal Articles

Understanding dipole formation at dielectric/dielectric hetero-interface

Lixing Zhou, Xiaolei Wang, Kai Han, Xueli Ma, Yanrong Wang, Jinjuan Xiang, Hong Yang, Jing Zhang, Chao Zhao, Tianchun Ye, Henry H. Radamson, Wenwu Wang

Appl. Phys. Lett. 113, 181601 (2018)

https://doi.org/10.1063/1.5049423

Published: November 2018

View article titled, Understanding dipole formation at dielectric/dielectric hetero-interface

Journal Articles

Physical understanding of different drain-induced-barrier-lowering variations in high-k/metal gate n-channel metal-oxide-semiconductor-field-effect-transistors induced by charge trapping under normal and reverse channel hot carrier stresses

Weichun Luo, Hong Yang, Wenwu Wang, Lichuan Zhao, Hao Xu, Shangqing Ren, Bo Tang, Zhaoyun Tang, Yefeng Xu, Jing Xu, Jiang Yan, Chao Zhao, Dapeng Chen, Tianchun Ye

Appl. Phys. Lett. 103, 183502 (2013)

https://doi.org/10.1063/1.4826918

Published: October 2013

View article titled, Physical understanding of different drain-induced-barrier-lowering variations in high-k/metal gate n-channel metal-oxide-semiconductor-field-effect-transistors induced by charge trapping under normal and reverse channel hot carrier stresses

Journal Articles

A possible origin of core-level shift in SiO₂/Si stacks

Xiaolei Wang, Jinjuan Xiang, Wenwu Wang, Jing Zhang, Kai Han, Hong Yang, Xueli Ma, Chao Zhao, Dapeng Chen, Tianchun Ye

Appl. Phys. Lett. 102, 041603 (2013)

https://doi.org/10.1063/1.4790157

Published: January 2013

View article titled, A possible origin of core-level shift in SiO2/Si stacks

Journal Articles

Reexamination of band offset transitivity employing oxide heterojunctions

Xiaolei Wang, Jinjuan Xiang, Wenwu Wang, Jing Zhang, Kai Han, Hong Yang, Xueli Ma, Chao Zhao, Dapeng Chen, Tianchun Ye

Appl. Phys. Lett. 102, 031605 (2013)

https://doi.org/10.1063/1.4789392

Published: January 2013

View article titled, Reexamination of band offset transitivity employing oxide heterojunctions

Journal Articles

Band alignment of HfO₂ on SiO₂/Si structure

Xiaolei Wang, Kai Han, Wenwu Wang, Jinjuan Xiang, Hong Yang, Jing Zhang, Xueli Ma, Chao Zhao, Dapeng Chen, Tianchun Ye

Appl. Phys. Lett. 100, 122907 (2012)

https://doi.org/10.1063/1.3694274

Published: March 2012

View article titled, Band alignment of HfO2 on SiO2/Si structure

Journal Articles

Band alignment of TiN/HfO₂ interface of TiN/HfO₂/SiO₂/Si stack

Xiaolei Wang, Kai Han, Wenwu Wang, Hong Yang, Jing Zhang, Xueli Ma, Jinjuan Xiang, Dapeng Chen, Tianchun Ye

Appl. Phys. Lett. 100, 102906 (2012)

https://doi.org/10.1063/1.3693188

Published: March 2012

View article titled, Band alignment of TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack

Journal Articles

Atomic configuration of the interface between epitaxial Gd doped HfO₂ high k thin films and Ge (001) substrates

Xinqiang Zhang, Hailing Tu, Yiwen Guo, Hongbin Zhao, Mengmeng Yang, Feng Wei, Yuhua Xiong, Zhimin Yang, Jun Du, Wenwu Wang

J. Appl. Phys. 111, 014102 (2012)

https://doi.org/10.1063/1.3672415

Published: January 2012

View article titled, Atomic configuration of the interface between epitaxial Gd doped HfO2 high k thin films and Ge (001) substrates

Journal Articles

Band structure and electronic characteristics of cubic La₂O₃ gate dielectrics epitaxially grown on InP substrates

Xinqiang Zhang, Hailing Tu, Hongbin Zhao, Mengmeng Yang, Xiaona Wang, Yuhua Xiong, Zhimin Yang, Jun Du, Wenwu Wang, Dapeng Chen

Appl. Phys. Lett. 99, 132902 (2011)

https://doi.org/10.1063/1.3643470

Published: September 2011

View article titled, Band structure and electronic characteristics of cubic La2O3 gate dielectrics epitaxially grown on InP substrates

Journal Articles

Antireflection properties and solar cell application of silicon nanostructures

Huihui Yue, Rui Jia, Chen Chen, Wuchang Ding, Yanlong Meng, Deqi Wu, Dawei Wu, Wei Chen, Xinyu Liu, Zhi Jin, Wenwu Wang, Tianchun Ye

J. Vac. Sci. Technol. B 29, 031208 (2011)

https://doi.org/10.1116/1.3591344

Published: May 2011

View article titled, Antireflection properties and solar cell application of silicon nanostructures

Journal Articles

Effects of rapid thermal annealing on structure and electrical properties of Gd-doped HfO 2 high k film

Yuhua Xiong, Hailing Tu, Jun Du, Xinqiang Zhang, Dapeng Chen, Wenwu Wang

Appl. Phys. Lett. 98, 082906 (2011)

https://doi.org/10.1063/1.3556652

Published: February 2011

View article titled, Effects of rapid thermal annealing on structure and electrical properties of Gd-doped HfO 2 high k film

Journal Articles

Comprehensive understanding of the effect of electric dipole at high-k/ SiO 2 interface on the flatband voltage shift in metal-oxide-semiconductor device

Xiaolei Wang, Kai Han, Wenwu Wang, Xueli Ma, Dapeng Chen, Jing Zhang, Jun Du, Yuhua Xiong, Anping Huang

Appl. Phys. Lett. 97, 062901 (2010)

https://doi.org/10.1063/1.3475774

Published: August 2010

View article titled, Comprehensive understanding of the effect of electric dipole at high-k/ SiO 2 interface on the flatband voltage shift in metal-oxide-semiconductor device

Journal Articles

Physical origin of dipole formation at high- k / SiO 2 interface in metal-oxide-semiconductor device with high- k /metal gate structure

Xiaolei Wang, Kai Han, Wenwu Wang, Shijie Chen, Xueli Ma, Dapeng Chen, Jing Zhang, Jun Du, Yuhua Xiong, Anping Huang

Appl. Phys. Lett. 96, 152907 (2010)

https://doi.org/10.1063/1.3399359

Published: April 2010

View article titled, Physical origin of dipole formation at high- k / SiO 2 interface in metal-oxide-semiconductor device with high- k /metal gate structure

NARROW

Topics

Distribution of the built-in field extracted from switching dynamics in HfO₂-based ferroelectric capacitor

The physical origin of inhomogeneous field within HfO₂-based ferroelectric capacitor

First-principles study of oxygen vacancy defects in orthorhombic Hf_0.5Zr_0.5O₂/SiO₂/Si gate stack

Impact of mobility degradation on endurance fatigue of FeFET with TiN/Hf_0.5Zr_0.5O₂/SiO_x/Si (MFIS) gate structure

Identification of bulk and interface state-induced threshold voltage instability in metal/SiN_x(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy

Thermodynamic driving force of transient negative capacitance of ferroelectric capacitors

High energy density and high efficiency achieved in the Ca_0.74Sr_0.26Zr_0.7Ti_0.3O₃ linear dielectric thin films on the silicon substrates

Capture and emission mechanisms of defect states at interface between nitride semiconductor and gate oxides in GaN-based metal-oxide-semiconductor power transistors

Understanding dipole formation at dielectric/dielectric hetero-interface

Physical understanding of different drain-induced-barrier-lowering variations in high-k/metal gate n-channel metal-oxide-semiconductor-field-effect-transistors induced by charge trapping under normal and reverse channel hot carrier stresses

A possible origin of core-level shift in SiO₂/Si stacks

Reexamination of band offset transitivity employing oxide heterojunctions

Band alignment of HfO₂ on SiO₂/Si structure

Band alignment of TiN/HfO₂ interface of TiN/HfO₂/SiO₂/Si stack

Atomic configuration of the interface between epitaxial Gd doped HfO₂ high k thin films and Ge (001) substrates

Band structure and electronic characteristics of cubic La₂O₃ gate dielectrics epitaxially grown on InP substrates

Antireflection properties and solar cell application of silicon nanostructures

Effects of rapid thermal annealing on structure and electrical properties of Gd-doped HfO 2 high k film

Comprehensive understanding of the effect of electric dipole at high-k/ SiO 2 interface on the flatband voltage shift in metal-oxide-semiconductor device

Physical origin of dipole formation at high- k / SiO 2 interface in metal-oxide-semiconductor device with high- k /metal gate structure

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