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Journal Articles

High-k shallow traps observed by charge pumping with varying discharging times

Szu-Han Ho, Ting-Chang Chang, Ying-Hsin Lu, Bin-Wei Wang, Wen-Hung Lo, Ching-En Chen, Jyun-Yu Tsai, Hua-Mao Chen, Kuan-Ju Liu, Tseung-Yuen Tseng, Osbert Cheng, Cheng-Tung Huang, Tsai-Fu Chen, Xi-Xin Cao
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 174506 (2013)
https://doi.org/10.1063/1.4828719
Published: November 2013
View article titled, High-k shallow traps observed by charge pumping with varying discharging times
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Journal Articles

Abnormal threshold voltage shift under hot carrier stress in Ti1−xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors

Jyun-Yu Tsai, Ting-Chang Chang, Wen-Hung Lo, Szu-Han Ho, Ching-En Chen, Hua-Mao Chen, Tseung-Yuen Tseng, Ya-Hsiang Tai, Osbert Cheng, Cheng-Tung Huang
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 124505 (2013)
https://doi.org/10.1063/1.4822158
Published: September 2013
View article titled, Abnormal threshold voltage shift under hot carrier stress in Ti<sub>1−x</sub>N<sub>x</sub>/HfO<sub>2</sub> p-channel metal-oxide-semiconductor field-effect transistors
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Journal Articles

Abnormal sub-threshold swing degradation under dynamic hot carrier stress in HfO2/TiN n-channel metal-oxide-semiconductor field-effect-transistors

Jyun-Yu Tsai, Ting-Chang Chang, Wen-Hung Lo, Ching-En Chen, Szu-Han Ho, Hua-Mao Chen, Ya-Hsiang Tai, Osbert Cheng, Cheng-Tung Huang
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 022106 (2013)
https://doi.org/10.1063/1.4811784
Published: July 2013
View article titled, Abnormal sub-threshold swing degradation under dynamic hot carrier stress in HfO<sub>2</sub>/TiN n-channel metal-oxide-semiconductor field-effect-transistors
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Journal Articles

Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric

Jyun-Yu Tsai, Ting-Chang Chang, Wen-Hung Lo, Ching-En Chen, Szu-Han Ho, Hua-Mao Chen, Ya-Hsiang Tai, Osbert Cheng, Cheng-Tung Huang
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 073507 (2013)
https://doi.org/10.1063/1.4791676
Published: February 2013
View article titled, Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric
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Journal Articles

Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks

Szu-Han Ho, Ting-Chang Chang, Bin-Wei Wang, Ying-Shin Lu, Wen-Hung Lo, Ching-En Chen, Jyun-Yu Tsai, Hua-Mao Chen, Guan-Ru Liu, Tseung-Yuen Tseng, Osbert Cheng, Cheng-Tung Huang, Xi-Xin Cao
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 012106 (2013)
https://doi.org/10.1063/1.4773914
Published: January 2013
View article titled, Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO<sub>2</sub>/metal gate stacks
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Journal Articles

Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors

Szu-Han Ho, Ting-Chang Chang, Chi-Wei Wu, Wen-Hung Lo, Ching-En Chen, Jyun-Yu Tsai, Guan-Ru Liu, Hua-Mao Chen, Ying-Shin Lu, Bin-Wei Wang, Tseung-Yuen Tseng, Osbert Cheng, Cheng-Tung Huang, Simon M. Sze
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 012103 (2013)
https://doi.org/10.1063/1.4773479
Published: January 2013
View article titled, Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO<sub>2</sub>/metal gate p-channel metal-oxide-semiconductor field-effect transistors
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Journal Articles

Analysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistors

Szu-Han Ho, Ting-Chang Chang, Ying-shin Lu, Wen-Hung Lo, Ching-En Chen, Jyun-Yu Tsai, Hua-Mao Chen, Chi-Wei Wu, Hung-Ping Luo, Guan-Ru Liu, Tseung-Yuen Tseng, Osbert Cheng, Cheng-Tung Huang, Simon M. Sze
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 233509 (2012)
https://doi.org/10.1063/1.4769444
Published: December 2012
View article titled, Analysis of anomalous traps measured by charge pumping technique in HfO<sub>2</sub>/metal gate n-channel metal-oxide-semiconductor field-effect transistors
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Journal Articles

Abnormal interface state generation under positive bias stress in TiN/HfO2 p-channel metal-oxide-semiconductor field effect transistors

Wen-Hung Lo, Ting-Chang Chang, Jyun-Yu Tsai, Chih-Hao Dai, Ching-En Chen, Szu-Han Ho, Hua-Mao Chen, Osbert Cheng, Cheng-Tung Huang
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 133505 (2012)
https://doi.org/10.1063/1.4752456
Published: September 2012
View article titled, Abnormal interface state generation under positive bias stress in TiN/HfO<sub>2</sub> p-channel metal-oxide-semiconductor field effect transistors
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Journal Articles

Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors

Szu-Han Ho, Ting-Chang Chang, Chi-Wei Wu, Wen-Hung Lo, Ching-En Chen, Jyun-Yu Tsai, Hung-Ping Luo, Tseung-Yuen Tseng, Osbert Cheng, Cheng-Tung Huang, Simon M. Sze
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 052105 (2012)
https://doi.org/10.1063/1.4739525
Published: July 2012
View article titled, Analysis of an anomalous hump in gate current after dynamic negative bias stress in Hf<sub>x</sub>Zr<sub>1-x</sub>O<sub>2</sub>/metal gate p-channel metal-oxide-semiconductor field-effect transistors
Open the PDF for Analysis of an anomalous hump in gate current after dynamic negative bias stress in Hf<sub>x</sub>Zr<sub>1-x</sub>O<sub>2</sub>/metal gate p-channel metal-oxide-semiconductor field-effect transistors in another window
Journal Articles

Charge trapping induced drain-induced-barrier-lowering in HfO2/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress

Wen-Hung Lo, Ting-Chang Chang, Jyun-Yu Tsai, Chih-Hao Dai, Ching-En Chen, Szu-Han Ho, Hua-Mao Chen, Osbert Cheng, Cheng-Tung Huang
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 152102 (2012)
https://doi.org/10.1063/1.3697644
Published: April 2012
View article titled, Charge trapping induced drain-induced-barrier-lowering in HfO<sub>2</sub>/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress
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Journal Articles

Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors

Chih-Hao Dai, Ting-Chang Chang, Ann-Kuo Chu, Yuan-Jui Kuo, Szu-Han Ho, Tien-Yu Hsieh, Wen-Hung Lo, Ching-En Chen, Jou-Miao Shih, Wan-Lin Chung, Bai-Shan Dai, Hua-Mao Chen, Guangrui Xia, Osbert Cheng, Cheng Tung Huang
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 012106 (2011)
https://doi.org/10.1063/1.3608241
Published: July 2011
View article titled, Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors
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Journal Articles

Impact of static and dynamic stress on threshold voltage instability in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors

Chih-Hao Dai, Ting-Chang Chang, Ann-Kuo Chu, Yuan-Jui Kuo, Wen-Hung Lo, Szu-Han Ho, Ching-En Chen, Jou-Miao Shih, Hua-Mao Chen, Bai-Shan Dai, Guangrui Xia, Osbert Cheng, Cheng Tung Huang
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 092112 (2011)
https://doi.org/10.1063/1.3560463
Published: March 2011
View article titled, Impact of static and dynamic stress on threshold voltage instability in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors
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