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Journal Articles

Study on thermal quenching mechanism and recombination dynamics of Si-bound exciton transition in AlN

Guoping Li, Ning Tang, Chen Ji, Qikun Wang, Liang Wu, Lei Fu, Shixiong Zhang, Shuaiyu Chen, Erfei Zhang, Tianyu Zhang, Fujun Xu, Weikun Ge, Bo Shen

Appl. Phys. Lett. 126, 072102 (2025)

https://doi.org/10.1063/5.0253813

Published: February 2025

View article titled, Study on thermal quenching mechanism and recombination dynamics of Si-bound exciton transition in AlN

Journal Articles

Ultra-thin p-AlGaN insert layer for enhancing the electrical performance of AlGaN-based deep-ultraviolet light-emitting diodes

Chen Ji, Jiaming Wang, Lisheng Zhang, Fujun Xu, Jing Lang, Xueqi Guo, Ziyao Zhang, Fuyun Tan, Chengzhi Ji, Xiangning Kang, Xuelin Yang, Ning Tang, Zhizhong Chen, Xinqiang Wang, Weikun Ge, Bo Shen

Appl. Phys. Lett. 125, 252107 (2024)

https://doi.org/10.1063/5.0242223

Published: December 2024

View article titled, Ultra-thin p-AlGaN insert layer for enhancing the electrical performance of AlGaN-based deep-ultraviolet light-emitting diodes

Journal Articles

Significant conductivity enhancement in Al-rich n-AlGaN by modulation doping

Xuzhou Fang, Jiaming Wang, Fujun Xu, Lisheng Zhang, Jing Lang, Xueqi Guo, Chen Ji, Chengzhi Ji, Yong Wu, Xuelin Yang, Xiangning Kang, Zhixin Qin, Ning Tang, Xinqiang Wang, Weikun Ge, Bo Shen

Appl. Phys. Lett. 124, 152106 (2024)

https://doi.org/10.1063/5.0197761

Published: April 2024

View article titled, Significant conductivity enhancement in Al-rich n-AlGaN by modulation doping

Includes: Supplementary data

Journal Articles

Elimination of spiral hillocks in AlGaN grown on high-temperature annealed AlN templates by adopting an AlN/AlGaN stress modulation multilayer

Xuzhou Fang, Jiaming Wang, Fujun Xu, Lisheng Zhang, Jing Lang, Ziyao Zhang, Fuyun Tan, Xuelin Yang, Xiangning Kang, Zhixin Qin, Ning Tang, Xinqiang Wang, Weikun Ge, Bo Shen

Appl. Phys. Lett. 124, 062103 (2024)

https://doi.org/10.1063/5.0184353

Published: February 2024

View article titled, Elimination of spiral hillocks in AlGaN grown on high-temperature annealed AlN templates by adopting an AlN/AlGaN stress modulation multilayer

Includes: Supplementary data

Journal Articles

Spin relaxation time enhancement induced by polarization field screening in an InGaN/GaN quantum well

Shixiong Zhang, Ning Tang, Zhenhao Sun, Guoping Li, Teng Fan, Lei Fu, Yunfan Zhang, Jiayang Jiang, Peng Jin, Weikun Ge, Bo Shen

Appl. Phys. Lett. 123, 132102 (2023)

https://doi.org/10.1063/5.0161465

Published: September 2023

View article titled, Spin relaxation time enhancement induced by polarization field screening in an InGaN/GaN quantum well

Journal Articles

RF loss reduction by a carbon-regulated Si substrate engineering in GaN-based HEMT buffer stacks

Zidong Cai, Xuelin Yang, Zhaohua Shen, Cheng Ma, Zhenghao Chen, Danshuo Liu, Fujun Xu, Ning Tang, Xinqiang Wang, Weikun Ge, Bo Shen

Appl. Phys. Lett. 123, 042102 (2023)

https://doi.org/10.1063/5.0156496

Published: July 2023

View article titled, RF loss reduction by a carbon-regulated Si substrate engineering in GaN-based HEMT buffer stacks

Includes: Supplementary data

Journal Articles

High mobility GaN drift layer on Si substrates: The role of surface N vacancy on carbon incorporation

Zhenghao Chen, Xuelin Yang, Danshuo Liu, Zidong Cai, Huayang Huang, Liwen Sang, Fujun Xu, Xinqiang Wang, Weikun Ge, Bo Shen

Appl. Phys. Lett. 123, 022101 (2023)

https://doi.org/10.1063/5.0157541

Published: July 2023

View article titled, High mobility GaN drift layer on Si substrates: The role of surface N vacancy on carbon incorporation

Journal Articles

Determination of C_N deep donor level in p-GaN with heavy Mg doping via a carrier statistics approach

Huayang Huang, Xuelin Yang, Zhaohua Shen, Zhenghao Chen, Ning Tang, Fujun Xu, Xinqiang Wang, Weikun Ge, Bo Shen

J. Appl. Phys. 133, 125706 (2023)

https://doi.org/10.1063/5.0128182

Published: March 2023

View article titled, Determination of CN deep donor level in p-GaN with heavy Mg doping via a carrier statistics approach

Journal Articles

Mechanism for self-compensation in heavily carbon doped GaN

Zhaohua Shen, Xuelin Yang, Shan Wu, Huayang Huang, Xiaolan Yan, Ning Tang, Fujun Xu, Xinqiang Wang, Weikun Ge, Bing Huang, Bo Shen

AIP Advances 13, 035026 (2023)

https://doi.org/10.1063/5.0133421

Published: March 2023

View article titled, Mechanism for self-compensation in heavily carbon doped GaN

Journal Articles

Identification of carbon location in p-type GaN: Synchrotron x-ray absorption spectroscopy and theory

Huayang Huang, Xiaolan Yan, Xuelin Yang, Wensheng Yan, Zeming Qi, Shan Wu, Zhaohua Shen, Ning Tang, Fujun Xu, Xinqiang Wang, Weikun Ge, Bing Huang, Bo Shen

Appl. Phys. Lett. 121, 252101 (2022)

https://doi.org/10.1063/5.0132130

Published: December 2022

View article titled, Identification of carbon location in p-type GaN: Synchrotron x-ray absorption spectroscopy and theory

Includes: Supplementary data

Journal Articles

Influence of intrinsic or extrinsic doping on charge state of carbon and its interaction with hydrogen in GaN

Shan Wu, Xuelin Yang, Zhenxing Wang, Zhongwen Ouyang, Huayang Huang, Qing Zhang, Qiuyu Shang, Zhaohua Shen, Fujun Xu, Xinqiang Wang, Weikun Ge, Bo Shen

Appl. Phys. Lett. 120, 242101 (2022)

https://doi.org/10.1063/5.0093514

Published: June 2022

View article titled, Influence of intrinsic or extrinsic doping on charge state of carbon and its interaction with hydrogen in GaN

Journal Articles

Spin dynamics in GaN/Al_0.1Ga_0.9N quantum well with complex band edge structure

Shixiong Zhang, Ning Tang, Xingchen Liu, Xiaoyue Zhang, Lei Fu, Yunfan Zhang, Teng Fan, Zhenhao Sun, Weikun Ge, Bo Shen

Appl. Phys. Lett. 118, 252107 (2021)

https://doi.org/10.1063/5.0053806

Published: June 2021

View article titled, Spin dynamics in GaN/Al0.1Ga0.9N quantum well with complex band edge structure

Journal Articles

High-mobility n⁻-GaN drift layer grown on Si substrates

Jianfei Shen, Xuelin Yang, Huayang Huang, Danshuo Liu, Zidong Cai, Zhenghao Chen, Cheng Ma, Fujun Xu, Liwen Sang, Xinqiang Wang, Weikun Ge, Bo Shen

Appl. Phys. Lett. 118, 222106 (2021)

https://doi.org/10.1063/5.0049133

Published: June 2021

View article titled, High-mobility n−-GaN drift layer grown on Si substrates

Journal Articles

Control of dislocations in heteroepitaxial AlN films by extrinsic supersaturated vacancies introduced through thermal desorption of heteroatoms

Jiaming Wang, Fujun Xu, Baiyin Liu, Jing Lang, Na Zhang, Xiangning Kang, Zhixin Qin, Xuelin Yang, Xinqiang Wang, Weikun Ge, Bo Shen

Appl. Phys. Lett. 118, 162103 (2021)

https://doi.org/10.1063/5.0045552

Published: April 2021

View article titled, Control of dislocations in heteroepitaxial AlN films by extrinsic supersaturated vacancies introduced through thermal desorption of heteroatoms

Includes: Supplementary data

Journal Articles

Interfacial symmetry breaking induced spin-orbit coupling in wurtzite GaN nanowires

Xingchen Liu, Hongming Guan, Ning Tang, Yuanjie Lv, Ling Chen, Xiaoyue Zhang, Shixiong Zhang, Yunfan Zhang, Xinqiang Wang, Weikun Ge, Bo Shen

Appl. Phys. Lett. 118, 122104 (2021)

https://doi.org/10.1063/5.0042776

Published: March 2021

View article titled, Interfacial symmetry breaking induced spin-orbit coupling in wurtzite GaN nanowires

Journal Articles

High quality GaN-on-SiC with low thermal boundary resistance by employing an ultrathin AlGaN buffer layer

Yuxia Feng, Huarui Sun, Xuelin Yang, Kang Liu, Jie Zhang, Jianfei Shen, Danshuo Liu, Zidong Cai, Fujun Xu, Ning Tang, Tongjun Yu, Xinqiang Wang, Weikun Ge, Bo Shen

Appl. Phys. Lett. 118, 052104 (2021)

https://doi.org/10.1063/5.0037796

Published: February 2021

View article titled, High quality GaN-on-SiC with low thermal boundary resistance by employing an ultrathin AlGaN buffer layer

Journal Articles

Investigation of carrier compensation traps in n⁻-GaN drift layer by high-temperature deep-level transient spectroscopy

Huayang Huang, Xuelin Yang, Shan Wu, Jianfei Shen, Xiaoguang He, Lai Wei, Danshuo Liu, Fujun Xu, Ning Tang, Xinqiang Wang, Weikun Ge, Bo Shen

Appl. Phys. Lett. 117, 112103 (2020)

https://doi.org/10.1063/5.0019576

Published: September 2020

View article titled, Investigation of carrier compensation traps in n − -GaN drift layer by high-temperature deep-level transient spectroscopy

Journal Articles

High quality AlN film grown on a nano-concave-circle patterned Si substrate with an AlN seed layer

Jianfei Shen, Xuelin Yang, Danshuo Liu, Zidong Cai, Lai Wei, Nan Xie, Fujun Xu, Ning Tang, Xinqiang Wang, Weikun Ge, Bo Shen

Appl. Phys. Lett. 117, 022103 (2020)

https://doi.org/10.1063/5.0010285

Published: July 2020

View article titled, High quality AlN film grown on a nano-concave-circle patterned Si substrate with an AlN seed layer

Journal Articles

Direct evidence of hydrogen interaction with carbon: C–H complex in semi-insulating GaN

Shan Wu, Xuelin Yang, Qing Zhang, Qiuyu Shang, Huayang Huang, Jianfei Shen, Xiaoguang He, Fujun Xu, Xinqiang Wang, Weikun Ge, Bo Shen

Appl. Phys. Lett. 116, 262101 (2020)

https://doi.org/10.1063/5.0010757

Published: June 2020

View article titled, Direct evidence of hydrogen interaction with carbon: C–H complex in semi-insulating GaN

Journal Articles

Al diffusion at AlN/Si interface and its suppression through substrate nitridation

Lai Wei, Xuelin Yang, Jianfei Shen, Danshuo Liu, Zidong Cai, Cheng Ma, Xiaoguang He, Jun Tang, Shengli Qi, Fujun Xu, Xinqiang Wang, Weikun Ge, Bo Shen

Appl. Phys. Lett. 116, 232105 (2020)

https://doi.org/10.1063/5.0006496

Published: June 2020

View article titled, Al diffusion at AlN/Si interface and its suppression through substrate nitridation

NARROW

Topics

Study on thermal quenching mechanism and recombination dynamics of Si-bound exciton transition in AlN

Ultra-thin p-AlGaN insert layer for enhancing the electrical performance of AlGaN-based deep-ultraviolet light-emitting diodes

Significant conductivity enhancement in Al-rich n-AlGaN by modulation doping

Elimination of spiral hillocks in AlGaN grown on high-temperature annealed AlN templates by adopting an AlN/AlGaN stress modulation multilayer

Spin relaxation time enhancement induced by polarization field screening in an InGaN/GaN quantum well

RF loss reduction by a carbon-regulated Si substrate engineering in GaN-based HEMT buffer stacks

High mobility GaN drift layer on Si substrates: The role of surface N vacancy on carbon incorporation

Determination of C_N deep donor level in p-GaN with heavy Mg doping via a carrier statistics approach

Mechanism for self-compensation in heavily carbon doped GaN

Identification of carbon location in p-type GaN: Synchrotron x-ray absorption spectroscopy and theory

Influence of intrinsic or extrinsic doping on charge state of carbon and its interaction with hydrogen in GaN

Spin dynamics in GaN/Al_0.1Ga_0.9N quantum well with complex band edge structure

High-mobility n⁻-GaN drift layer grown on Si substrates

Control of dislocations in heteroepitaxial AlN films by extrinsic supersaturated vacancies introduced through thermal desorption of heteroatoms

Interfacial symmetry breaking induced spin-orbit coupling in wurtzite GaN nanowires

High quality GaN-on-SiC with low thermal boundary resistance by employing an ultrathin AlGaN buffer layer

Investigation of carrier compensation traps in n⁻-GaN drift layer by high-temperature deep-level transient spectroscopy

High quality AlN film grown on a nano-concave-circle patterned Si substrate with an AlN seed layer

Direct evidence of hydrogen interaction with carbon: C–H complex in semi-insulating GaN

Al diffusion at AlN/Si interface and its suppression through substrate nitridation

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