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Journal Articles

Development and preliminary test of a space-resolved vacuum-ultraviolet spectroscopy in EAST

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L. He, H. M. Zhang, B. Lyu, Y. C. Shen, C. Y. Li, W. C. Yang, J. Fu, X. W. Du, F. D. Wang, Q. P. Wang, X. H. Yin, S. K. Wan, B. Bin, Y. C. Li, S. Y. Dai, B. Liu
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 92, 043519 (2021)
https://doi.org/10.1063/5.0040643
Published: April 2021
View article titled, Development and preliminary test of a space-resolved vacuum-ultraviolet spectroscopy in EAST
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Journal Articles

Nonlinear interaction and wave breaking with a submerged porous structure

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Chih-Min Hsieh, Amalendu Sau, Robert R. Hwang, W. C. Yang
Journal: Physics of Fluids
Physics of Fluids 28, 126601 (2016)
https://doi.org/10.1063/1.4971319
Published: December 2016
View article titled, Nonlinear interaction and wave breaking with a submerged porous structure
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Journal Articles

GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy

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H. Y. Tseng, W. C. Yang, P. Y. Lee, C. W. Lin, Kai-Yuan Cheng, K. C. Hsieh, K. Y. Cheng, C.-H. Hsu
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 082102 (2016)
https://doi.org/10.1063/1.4961546
Published: August 2016
View article titled, GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy
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Journal Articles

Directional luminescence control of InGaN/GaN heterostructures using quantum structure lattice arrays

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Y. L. Wang, K. Y. Chen, W. C. Yang, S. Y. Chiu, H. H. Huang, Y. C. Hung, K. Y. Cheng
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 111109 (2015)
https://doi.org/10.1063/1.4916087
Published: March 2015
View article titled, Directional luminescence control of InGaN/GaN heterostructures using quantum structure lattice arrays
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Journal Articles

Growth mechanisms of plasma-assisted molecular beam epitaxy of green emission InGaN/GaN single quantum wells at high growth temperatures

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W. C. Yang, C. H. Wu, Y. T. Tseng, S. Y. Chiu, K. Y. Cheng
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 015306 (2015)
https://doi.org/10.1063/1.4905419
Published: January 2015
View article titled, Growth mechanisms of plasma-assisted molecular beam epitaxy of green emission InGaN/GaN single quantum wells at high growth temperatures
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Journal Articles

Criticality of flow transition behind two side-by-side elliptic cylinders

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Y. F. Peng, Amalendu Sau, Robert R. Hwang, W. C. Yang, Chih-Min Hsieh
Journal: Physics of Fluids
Physics of Fluids 24, 034102 (2012)
https://doi.org/10.1063/1.3687450
Published: March 2012
View article titled, Criticality of flow transition behind two side-by-side elliptic cylinders
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Journal Articles

Origins of dielectric response and conductivity in (Bi1−xNdx)FeO3 multiferroic ceramics

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C.-S. Tu, W.-C. Yang, V. H. Schmidt, R. R. Chien
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 114114 (2011)
https://doi.org/10.1063/1.3667204
Published: December 2011
View article titled, Origins of dielectric response and conductivity in (Bi1−xNdx)FeO3 multiferroic ceramics
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Journal Articles

Effect of Si-spacer thickness on optical properties of multistacked Ge quantum dots grown by rapid thermal chemical vapor deposition

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C. J. Park, W.-C. Yang, H. Y. Cho, Min Choul Kim, Sung Kim, Suk-Ho Choi
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 014304 (2007)
https://doi.org/10.1063/1.2402590
Published: January 2007
View article titled, Effect of Si-spacer thickness on optical properties of multistacked Ge quantum dots grown by rapid thermal chemical vapor deposition
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Journal Articles

Publisher’s Note: “Thermal stability of Ti O 2 , Zr O 2 , or Hf O 2 on Si(100) by photoelectron emission microscopy” [J. Appl. Phys. 99, 023519 (2006)]

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M. C. Zeman, C. C. Fulton, G. Lucovsky, R. J. Nemanich, W.-C. Yang
Journal: Journal of Applied Physics
J. Appl. Phys. 99, 109902 (2006)
https://doi.org/10.1063/1.2201707
Published: May 2006
View article titled, Publisher’s Note: “Thermal stability of Ti O 2 , Zr O 2 , or Hf O 2 on Si(100) by photoelectron emission microscopy” [J. Appl. Phys. 99, 023519 (2006)]
Open the PDF for Publisher’s Note: “Thermal stability of Ti O 2 , Zr O 2 , or Hf O 2 on Si(100) by photoelectron emission microscopy” [J. Appl. Phys. 99, 023519 (2006)] in another window
Journal Articles

Large capacitance-voltage hysteresis loops in SiO 2 films containing Ge nanocrystals produced by ion implantation and annealing

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C. J. Park, K. H. Cho, W.-C. Yang, H. Y. Cho, Suk-Ho Choi, R. G. Elliman, J. H. Han, Chungwoo Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 071916 (2006)
https://doi.org/10.1063/1.2175495
Published: February 2006
View article titled, Large capacitance-voltage hysteresis loops in SiO 2 films containing Ge nanocrystals produced by ion implantation and annealing
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Journal Articles

Thermal stability of Ti O 2 , Zr O 2 , or Hf O 2 on Si(100) by photoelectron emission microscopy

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M. C. Zeman, C. C. Fulton, G. Lucovsky, R. J. Nemanich, W.-C. Yang
Journal: Journal of Applied Physics
J. Appl. Phys. 99, 023519 (2006)
https://doi.org/10.1063/1.2163984
Published: January 2006
View article titled, Thermal stability of Ti O 2 , Zr O 2 , or Hf O 2 on Si(100) by photoelectron emission microscopy
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Journal Articles

Raman characterization of electronic properties of self-assembled GaN nanorods grown by plasma-assisted molecular-beam epitaxy

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D. Wang, C. -C. Tin, J. R. Williams, M. Park, Y. S. Park, C. M. Park, T. W. Kang, W. -C. Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 242105 (2005)
https://doi.org/10.1063/1.2146066
Published: December 2005
View article titled, Raman characterization of electronic properties of self-assembled GaN nanorods grown by plasma-assisted molecular-beam epitaxy
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Journal Articles

Scanning probe investigation of surface charge and surface potential of GaN-based heterostructures

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B. J. Rodriguez, W.-C. Yang, R. J. Nemanich, A. Gruverman
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 112115 (2005)
https://doi.org/10.1063/1.1869535
Published: March 2005
View article titled, Scanning probe investigation of surface charge and surface potential of GaN-based heterostructures
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Journal Articles

Polarization-dependent electron affinity of LiNbO 3 surfaces

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W.-C. Yang, B. J. Rodriguez, A. Gruverman, R. J. Nemanich
Journal: Applied Physics Letters
Appl. Phys. Lett. 85, 2316–2318 (2004)
https://doi.org/10.1063/1.1790604
Published: September 2004
View article titled, Polarization-dependent electron affinity of LiNbO 3 surfaces
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Journal Articles

Shape stability of TiSi 2 islands on Si (111)

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W.-C. Yang, H. Ade, R. J. Nemanich
Journal: Journal of Applied Physics
J. Appl. Phys. 95, 1572–1576 (2004)
https://doi.org/10.1063/1.1636526
Published: February 2004
View article titled, Shape stability of TiSi 2 islands on Si (111)
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Journal Articles

Photoelectron emission microscopy observation of inversion domain boundaries of GaN-based lateral polarity heterostructures

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W.-C. Yang, B. J. Rodriguez, M. Park, R. J. Nemanich, O. Ambacher, V. Cimalla
Journal: Journal of Applied Physics
J. Appl. Phys. 94, 5720–5725 (2003)
https://doi.org/10.1063/1.1618355
Published: November 2003
View article titled, Photoelectron emission microscopy observation of inversion domain boundaries of GaN-based lateral polarity heterostructures
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Journal Articles

Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures

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M. Park, J. J. Cuomo, B. J. Rodriguez, W.-C. Yang, R. J. Nemanich, O. Ambacher
Journal: Journal of Applied Physics
J. Appl. Phys. 93, 9542–9547 (2003)
https://doi.org/10.1063/1.1570507
Published: June 2003
View article titled, Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures
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Journal Articles

Influence of strain, surface diffusion and Ostwald ripening on the evolution of nanostructures for erbium on Si(001)

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Lena Fitting, M. C. Zeman, W.-C. Yang, R. J. Nemanich
Journal: Journal of Applied Physics
J. Appl. Phys. 93, 4180–4184 (2003)
https://doi.org/10.1063/1.1557787
Published: April 2003
View article titled, Influence of strain, surface diffusion and Ostwald ripening on the evolution of nanostructures for erbium on Si(001)
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Journal Articles

Photon energy dependence of contrast in photoelectron emission microscopy of Si devices

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V. W. Ballarotto, K. Siegrist, R. J. Phaneuf, E. D. Williams, W.-C. Yang, R. J. Nemanich
Journal: Applied Physics Letters
Appl. Phys. Lett. 78, 3547–3549 (2001)
https://doi.org/10.1063/1.1376151
Published: May 2001
View article titled, Photon energy dependence of contrast in photoelectron emission microscopy of Si devices
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