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W. Wesch
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Journal Articles

Response to “Comment on ‘Damage evolution in LiNbO3 due to electronic energy deposition below the threshold for direct amorphous track formation’” [J. Appl. Phys. 127, 156101 (2020)]

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W. Wesch, E. Wendler
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 156102 (2020)
https://doi.org/10.1063/1.5142806
Published: April 2020
View articletitled, Response to “Comment on ‘Damage evolution in LiNbO3 due to electronic energy deposition below the threshold for direct amorphous track formation’” [J. Appl. Phys. 127, 156101 (2020)]
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Journal Articles

Damage evolution in LiNbO3 due to electronic energy deposition below the threshold for direct amorphous track formation

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W. Wesch, J. Rensberg, M. Schmidt, E. Wendler
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 125105 (2019)
https://doi.org/10.1063/1.5116667
Published: September 2019
View articletitled, Damage evolution in LiNbO3 due to electronic energy deposition below the threshold for direct amorphous track formation
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Journal Articles

Ion-implantation-induced amorphization of InxGa1−xP alloys as functions of stoichiometry and temperature

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Z. S. Hussain, E. Wendler, W. Wesch, C. S. Schnohr, M. C. Ridgway
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 195702 (2016)
https://doi.org/10.1063/1.4950697
Published: May 2016
View articletitled, Ion-implantation-induced amorphization of InxGa1−xP alloys as functions of stoichiometry and temperature
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Journal Articles

CdTe grown under Cd/Te excess at very low temperatures for solar cells

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C. Heisler, M. Brückner, F. Lind, C. Kraft, U. Reislöhner, C. Ronning, W. Wesch
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 224504 (2013)
https://doi.org/10.1063/1.4809761
Published: June 2013
View articletitled, CdTe grown under Cd/Te excess at very low temperatures for solar cells
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Journal Articles

Spatially resolved measurements of charge carrier lifetimes in CdTe solar cells

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C. Kraft, H. Hempel, V. Buschmann, T. Siebert, C. Heisler, W. Wesch, C. Ronning
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 124510 (2013)
https://doi.org/10.1063/1.4798472
Published: March 2013
View articletitled, Spatially resolved measurements of charge carrier lifetimes in CdTe solar cells
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Includes: Supplementary data
Journal Articles

Ion-beam-induced damage formation in CdTe

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C. W. Rischau, C. S. Schnohr, E. Wendler, W. Wesch
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 113531 (2011)
https://doi.org/10.1063/1.3592265
Published: June 2011
View articletitled, Ion-beam-induced damage formation in CdTe
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Journal Articles

Ion Beam Synthesis of Transition Metal Nanoclusters in Silicon

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W. Wesch, O. Picht, M. Steinert, A. Undisz, M. Rettenmayr, U. Kaiser, J. Biskupek, N. A. Sobolev
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1099, 369–375 (2009)
https://doi.org/10.1063/1.3120054
Published: March 2009
View articletitled, Ion Beam Synthesis of Transition Metal Nanoclusters in Silicon
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Journal Articles

Vapor-liquid-solid growth of silicon nanowires by chemical vapor deposition on implanted templates

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S. Christiansen, R. Schneider, R. Scholz, U. Gösele, Th. Stelzner, G. Andrä, E. Wendler, W. Wesch
Journal: Journal of Applied Physics
J. Appl. Phys. 100, 084323 (2006)
https://doi.org/10.1063/1.2357342
Published: October 2006
View articletitled, Vapor-liquid-solid growth of silicon nanowires by chemical vapor deposition on implanted templates
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Journal Articles

Ion-beam induced effects at 15 K in α - Al 2 O 3 of different orientations

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C. S. Schnohr, E. Wendler, K. Gärtner, W. Wesch, K. Ellmer
Journal: Journal of Applied Physics
J. Appl. Phys. 99, 123511 (2006)
https://doi.org/10.1063/1.2204748
Published: June 2006
View articletitled, Ion-beam induced effects at 15 K in α - Al 2 O 3 of different orientations
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Journal Articles

Damage formation and annealing at low temperatures in ion implanted ZnO

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K. Lorenz, E. Alves, E. Wendler, O. Bilani, W. Wesch, M. Hayes
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 191904 (2005)
https://doi.org/10.1063/1.2126137
Published: October 2005
View articletitled, Damage formation and annealing at low temperatures in ion implanted ZnO
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Journal Articles

Charge state effect on near-surface damage formation in swift heavy ion irradiated InP

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A. Kamarou, E. Wendler, W. Wesch
Journal: Journal of Applied Physics
J. Appl. Phys. 97, 123532 (2005)
https://doi.org/10.1063/1.1938279
Published: June 2005
View articletitled, Charge state effect on near-surface damage formation in swift heavy ion irradiated InP
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Journal Articles

Identification of implantation-induced defects in GaN: A near-edge x-ray absorption fine structure study

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M. Katsikini, F. Pinakidou, E. C. Paloura, W. Wesch
Journal: Applied Physics Letters
Appl. Phys. Lett. 82, 1556–1558 (2003)
https://doi.org/10.1063/1.1559650
Published: March 2003
View articletitled, Identification of implantation-induced defects in GaN: A near-edge x-ray absorption fine structure study
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Journal Articles

Nanocrystal formation in SiC by Ge ion implantation and subsequent thermal annealing

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Ch. Schubert, U. Kaiser, A. Hedler, W. Wesch, T. Gorelik, U. Glatzel, J. Kräußlich, B. Wunderlich, G. Heß, K. Goetz
Journal: Journal of Applied Physics
J. Appl. Phys. 91, 1520–1524 (2002)
https://doi.org/10.1063/1.1430539
Published: February 2002
View articletitled, Nanocrystal formation in SiC by Ge ion implantation and subsequent thermal annealing
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Journal Articles

Damage production in semiconductor materials by a focused Ga + ion beam

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R. Menzel, K. Gärtner, W. Wesch, H. Hobert
Journal: Journal of Applied Physics
J. Appl. Phys. 88, 5658–5661 (2000)
https://doi.org/10.1063/1.1319168
Published: November 2000
View articletitled, Damage production in semiconductor materials by a focused Ga + ion beam
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Journal Articles

Maskless sub- μ m patterning of silicon carbide using a focused ion beam in combination with wet chemical etching

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R. Menzel, T. Bachmann, W. Wesch, H. Hobert
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 16, 540–543 (1998)
https://doi.org/10.1116/1.589859
Published: March 1998
View articletitled, Maskless sub- μ m patterning of silicon carbide using a focused ion beam in combination with wet chemical etching
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Journal Articles

Investigations on liquid alloy ion sources for rare-earth elements

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F. Machalett, W. Wesch, R. Mühle, S. Barth
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 69, 1336–1339 (1998)
https://doi.org/10.1063/1.1148802
Published: March 1998
View articletitled, Investigations on liquid alloy ion sources for rare-earth elements
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Journal Articles

Investigations on liquid alloy ion sources for rare-earth elements (abstract)

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F. Machalett, W. Wesch, R. Mühle, S. Barth
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 69, 852 (1998)
https://doi.org/10.1063/1.1148739
Published: February 1998
View articletitled, Investigations on liquid alloy ion sources for rare-earth elements (abstract)
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Journal Articles

Structural and electrical properties of Si‐ and Se‐implanted InP layers

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P. Müller, T. Bachmann, E. Wendler, W. Wesch
Journal: Journal of Applied Physics
J. Appl. Phys. 75, 3814–3821 (1994)
https://doi.org/10.1063/1.356058
Published: April 1994
View articletitled, Structural and electrical properties of Si‐ and Se‐implanted InP layers
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Journal Articles

Radiation damage and optical properties of Ar+‐implanted GaP

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E. Wendler, W. Wesch, G. Götz
Journal: Journal of Applied Physics
J. Appl. Phys. 70, 144–149 (1991)
https://doi.org/10.1063/1.350302
Published: July 1991
View articletitled, Radiation damage and optical properties of Ar+‐implanted GaP
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Journal Articles

Investigation of Se+‐implanted GaAs layers by temperature‐dependent dechanneling

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T. Bachmann, W. Wesch, K. Gärtner, H. Bartsch
Journal: Journal of Applied Physics
J. Appl. Phys. 69, 8072–8075 (1991)
https://doi.org/10.1063/1.347455
Published: June 1991
View articletitled, Investigation of Se+‐implanted GaAs layers by temperature‐dependent dechanneling
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