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Journal Articles

Overcoming the doping limit in GaAs by ion implantation and pulsed laser melting

Kin Man Yu, M. A. Scarpulla, Chun Yuen Ho, O. D. Dubon, W. Walukiewicz

J. Appl. Phys. 135, 045703 (2024)

https://doi.org/10.1063/5.0190600

Published: January 2024

View article titled, Overcoming the doping limit in GaAs by ion implantation and pulsed laser melting

Journal Articles

Growth of GaP₁ ₋ _x ₋ _yAs_yN_x on Si substrates by chemical beam epitaxy

K. Ben Saddik, A. F. Braña, N. López, W. Walukiewicz, B. J. García

J. Appl. Phys. 126, 105704 (2019)

https://doi.org/10.1063/1.5111090

Published: September 2019

View article titled, Growth of GaP1 − x − yAsyNx on Si substrates by chemical beam epitaxy

Journal Articles

Effects of the host conduction band energy on the electronic band structure of ZnCdTeO dilute oxide alloys

M. Welna, Ł Janicki, W. M. Linhart, T. Tanaka, K. M. Yu, R. Kudrawiec, W. Walukiewicz

J. Appl. Phys. 126, 083106 (2019)

https://doi.org/10.1063/1.5111600

Published: August 2019

View article titled, Effects of the host conduction band energy on the electronic band structure of ZnCdTeO dilute oxide alloys

Journal Articles

Photoreflectance and photoinduced microwave reflectance studies of surface band bending in Mg-doped InN

R. Kudrawiec, L. Janicki, W. M. Linhart, M. A. Mayer, I. D. Sharp, S. Choi, O. Bierwagen, J. S. Speck, W. Walukiewicz

J. Appl. Phys. 126, 045712 (2019)

https://doi.org/10.1063/1.5096528

Published: July 2019

View article titled, Photoreflectance and photoinduced microwave reflectance studies of surface band bending in Mg-doped InN

Journal Articles

ZnO_1−xTe_x highly mismatched alloys beyond the dilute alloy limit: Synthesis and electronic band structure

M. Ting, K. M. Yu, M. Jaquez, I. D. Sharp, Yifan Ye, N. Segercrantz, R. Greif, S. S. Mao, Chao Ping Liu, W. Walukiewicz

J. Appl. Phys. 125, 155702 (2019)

https://doi.org/10.1063/1.5088852

Published: April 2019

View article titled, ZnO1−xTex highly mismatched alloys beyond the dilute alloy limit: Synthesis and electronic band structure

Journal Articles

Undoped p-type GaN_1–_xSb_x alloys: Effects of annealing

N. Segercrantz, Y. Baumgartner, M. Ting, K. M. Yu, S. S. Mao, W. L. Sarney, S. P. Svensson, W. Walukiewicz

Appl. Phys. Lett. 109, 252102 (2016)

https://doi.org/10.1063/1.4972559

Published: December 2016

View article titled, Undoped p-type GaN1–xSbx alloys: Effects of annealing

Journal Articles

Growth and characterization of ZnO_1−xS_x highly mismatched alloys over the entire composition

M. Jaquez, K. M. Yu, M. Ting, M. Hettick, J. F. Sánchez-Royo, M. Wełna, A. Javey, O. D. Dubon, W. Walukiewicz

J. Appl. Phys. 118, 215702 (2015)

https://doi.org/10.1063/1.4936551

Published: December 2015

View article titled, Growth and characterization of ZnO1−xSx highly mismatched alloys over the entire composition

Journal Articles

Electronic band structure of highly mismatched GaN_1−xSb_x alloys in a broad composition range

N. Segercrantz, K. M. Yu, M. Ting, W. L. Sarney, S. P. Svensson, S. V. Novikov, C. T. Foxon, W. Walukiewicz

Appl. Phys. Lett. 107, 142104 (2015)

https://doi.org/10.1063/1.4932592

Published: October 2015

View article titled, Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range

Journal Articles

Effects of the d-donor level of vanadium on the properties of Zn_1−xV_xO films

E. García-Hemme, K. M. Yu, P. Wahnon, G. González-Díaz, W. Walukiewicz

Appl. Phys. Lett. 106, 182101 (2015)

https://doi.org/10.1063/1.4919791

Published: May 2015

View article titled, Effects of the d-donor level of vanadium on the properties of Zn1−xVxO films

Journal Articles

Temperature evolution of carrier dynamics in GaN_xP_yAs_1−y−xalloys

M. Baranowski, R. Kudrawiec, A. V. Luce, M. Latkowska, K. M. Yu, Y. J. Kuang (邝彦瑾), J. Misiewicz, C. W. Tu, W. Walukiewicz

J. Appl. Phys. 117, 175702 (2015)

https://doi.org/10.1063/1.4919751

Published: May 2015

View article titled, Temperature evolution of carrier dynamics in GaNxPyAs1−y−xalloys

Journal Articles

Electronic band structure of ZnO-rich highly mismatched ZnO_1−xTe_x alloys

M. Ting, R. dos Reis, M. Jaquez, O. D. Dubon, S. S. Mao, K. M. Yu, W. Walukiewicz

Appl. Phys. Lett. 106, 092101 (2015)

https://doi.org/10.1063/1.4913840

Published: March 2015

View article titled, Electronic band structure of ZnO-rich highly mismatched ZnO1−xTex alloys

Journal Articles

Growth and characterization of highly mismatched GaN_1−xSb_x alloys

K. M. Yu, S. V. Novikov, Min Ting, W. L. Sarney, S. P. Svensson, M. Shaw, R. W. Martin, W. Walukiewicz, C. T. Foxon

J. Appl. Phys. 116, 123704 (2014)

https://doi.org/10.1063/1.4896364

Published: September 2014

View article titled, Growth and characterization of highly mismatched GaN1−xSbx alloys

Journal Articles

Material properties of Cd₁₋ _x Mg _x O alloys synthesized by radio frequency sputtering

Guibin Chen, K. M. Yu, L. A. Reichertz, W. Walukiewicz

Appl. Phys. Lett. 103, 041902 (2013)

https://doi.org/10.1063/1.4816326

Published: July 2013

View article titled, Material properties of Cd1− x Mg x O alloys synthesized by radio frequency sputtering

Journal Articles

Local structure of amorphous GaN_1−xAs_x semiconductor alloys across the composition range

A. X. Levander, K. M. Yu, S. V. Novikov, Z. Liliental-Weber, C. T. Foxon, O. D. Dubon, J. Wu, W. Walukiewicz

J. Appl. Phys. 113, 243505 (2013)

https://doi.org/10.1063/1.4812277

Published: June 2013

View article titled, Local structure of amorphous GaN1−xAsx semiconductor alloys across the composition range

Journal Articles

Crystal structure and properties of Cd_xZn_1−xO alloys across the full composition range

D. M. Detert, S. H. M. Lim, K. Tom, A. V. Luce, A. Anders, O. D. Dubon, K. M. Yu, W. Walukiewicz

Appl. Phys. Lett. 102, 232103 (2013)

https://doi.org/10.1063/1.4809950

Published: June 2013

View article titled, Crystal structure and properties of CdxZn1−xO alloys across the full composition range

Journal Articles

Temperature dependence of photoluminescence from InNAsSb layers: The role of localized and free carrier emission in determination of temperature dependence of energy gap

M. Latkowska, R. Kudrawiec, F. Janiak, M. Motyka, J. Misiewicz, Q. Zhuang, A. Krier, W. Walukiewicz

Appl. Phys. Lett. 102, 122109 (2013)

https://doi.org/10.1063/1.4798590

Published: March 2013

View article titled, Temperature dependence of photoluminescence from InNAsSb layers: The role of localized and free carrier emission in determination of temperature dependence of energy gap

Journal Articles

GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy

Y. J. Kuang (邝彦瑾), K. M. Yu, R. Kudrawiec, A. V. Luce, M. Ting, W. Walukiewicz, C. W. Tu

Appl. Phys. Lett. 102, 112105 (2013)

https://doi.org/10.1063/1.4795782

Published: March 2013

View article titled, GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy

Journal Articles

P-type InGaN across the entire alloy composition range

K. Wang, T. Araki, K. M. Yu, T. Katsuki, M. A. Mayer, E. Alarcon-Llado, J. W. Ager, III, W. Walukiewicz, Y. Nanishi

Appl. Phys. Lett. 102, 102111 (2013)

https://doi.org/10.1063/1.4795718

Published: March 2013

View article titled, P-type InGaN across the entire alloy composition range

Journal Articles

Highly mismatched N-rich GaN_1−xSb_x films grown by low temperature molecular beam epitaxy

K. M. Yu, W. L. Sarney, S. V. Novikov, D. Detert, R. Zhao, J. D. Denlinger, S. P. Svensson, O. D. Dubon, W. Walukiewicz, C. T. Foxon

Appl. Phys. Lett. 102, 102104 (2013)

https://doi.org/10.1063/1.4795446

Published: March 2013

View article titled, Highly mismatched N-rich GaN1−xSbx films grown by low temperature molecular beam epitaxy

Journal Articles

Contactless electroreflectance study of the Fermi level pinning on GaSb surface in n-type and p-type GaSb Van Hoof structures

R. Kudrawiec, H. P. Nair, M. Latkowska, J. Misiewicz, S. R. Bank, W. Walukiewicz

J. Appl. Phys. 112, 123513 (2012)

https://doi.org/10.1063/1.4770413

Published: December 2012

View article titled, Contactless electroreflectance study of the Fermi level pinning on GaSb surface in n-type and p-type GaSb Van Hoof structures

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Topics

Overcoming the doping limit in GaAs by ion implantation and pulsed laser melting

Growth of GaP₁ ₋ _x ₋ _yAs_yN_x on Si substrates by chemical beam epitaxy

Effects of the host conduction band energy on the electronic band structure of ZnCdTeO dilute oxide alloys

Photoreflectance and photoinduced microwave reflectance studies of surface band bending in Mg-doped InN

ZnO_1−xTe_x highly mismatched alloys beyond the dilute alloy limit: Synthesis and electronic band structure

Undoped p-type GaN_1–_xSb_x alloys: Effects of annealing

Growth and characterization of ZnO_1−xS_x highly mismatched alloys over the entire composition

Electronic band structure of highly mismatched GaN_1−xSb_x alloys in a broad composition range

Effects of the d-donor level of vanadium on the properties of Zn_1−xV_xO films

Temperature evolution of carrier dynamics in GaN_xP_yAs_1−y−xalloys

Electronic band structure of ZnO-rich highly mismatched ZnO_1−xTe_x alloys

Growth and characterization of highly mismatched GaN_1−xSb_x alloys

Material properties of Cd₁₋ _x Mg _x O alloys synthesized by radio frequency sputtering

Local structure of amorphous GaN_1−xAs_x semiconductor alloys across the composition range

Crystal structure and properties of Cd_xZn_1−xO alloys across the full composition range

Temperature dependence of photoluminescence from InNAsSb layers: The role of localized and free carrier emission in determination of temperature dependence of energy gap

GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy

P-type InGaN across the entire alloy composition range

Highly mismatched N-rich GaN_1−xSb_x films grown by low temperature molecular beam epitaxy

Contactless electroreflectance study of the Fermi level pinning on GaSb surface in n-type and p-type GaSb Van Hoof structures

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