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Journal Articles

Misfit stress‐induced compositional instability in hetero‐epitaxial compound semiconductor structures

S. N. G. Chu, R. A. Logan, W. T. Tsang
Journal: Journal of Applied Physics
J. Appl. Phys. 79, 1397–1404 (1996)
https://doi.org/10.1063/1.361039
Published: February 1996
View article titled, Misfit stress‐induced compositional instability in hetero‐epitaxial compound semiconductor structures
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Journal Articles

Very low threshold 1.55 μm grating coupled surface‐emitting lasers for optical signal processing and interconnect

F. S. Choa, M. H. Shih, J. Y. Fan, G. J. Simonis, P.‐L. Liu, T. Tanbun‐Ek, R. A. Logan, W. T. Tsang, A. M. Sergent
Journal: Applied Physics Letters
Appl. Phys. Lett. 67, 2777–2779 (1995)
https://doi.org/10.1063/1.114590
Published: November 1995
View article titled, Very low threshold 1.55 μm grating coupled surface‐emitting lasers for optical signal processing and interconnect
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Journal Articles

Stress free and moisture insensitive silicon oxide dielectric films formed by molecular‐beam deposition

Naresh Chand, R. R. Kola, R. L. Opila, R. B. Comizzoli, H. Krautter, A. M. Sergent, W. T. Tsang, J. W. Osenbach, H. S. Luftman
Journal: Journal of Applied Physics
J. Appl. Phys. 78, 3315–3322 (1995)
https://doi.org/10.1063/1.360024
Published: September 1995
View article titled, Stress free and moisture insensitive silicon oxide dielectric films formed by molecular‐beam deposition
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Journal Articles

Semi‐insulating InP grown by chemical beam epitaxy with pentacarbonyliron doping

J. D. Walker, W. T. Tsang
Journal: Applied Physics Letters
Appl. Phys. Lett. 66, 2558–2560 (1995)
https://doi.org/10.1063/1.113166
Published: May 1995
View article titled, Semi‐insulating InP grown by chemical beam epitaxy with pentacarbonyliron doping
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Journal Articles

Surface cleaning of GaAs by in situ chemical beam etching

T. H. Chiu, W. T. Tsang, M. D. Williams, C. A. C. Mendonça, K. Dreyer, F. G. Storz
Journal: Applied Physics Letters
Appl. Phys. Lett. 65, 3368–3370 (1994)
https://doi.org/10.1063/1.112394
Published: December 1994
View article titled, Surface cleaning of GaAs by <em>in</em> <em>situ</em> chemical beam etching
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Journal Articles

Effects of cation diffusion on the monolayer control of chemical beam etching

T. H. Chiu, M. D. Williams, W. T. Tsang, R. M. Kapre
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 12, 3369–3373 (1994)
https://doi.org/10.1116/1.587514
Published: November 1994
View article titled, Effects of cation diffusion on the monolayer control of chemical beam etching
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Journal Articles

Surface roughness during chemical beam etching and its remedy by enhanced cation diffusion

T. H. Chiu, M. D. Williams, J. F. Ferguson, W. T. Tsang, R. M. Kapre
Journal: Applied Physics Letters
Appl. Phys. Lett. 65, 448–450 (1994)
https://doi.org/10.1063/1.112329
Published: July 1994
View article titled, Surface roughness during chemical beam etching and its remedy by enhanced cation diffusion
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Journal Articles

Monolayer chemical beam etching: Reverse molecular beam epitaxy

W. T. Tsang, T. H. Chiu, R. M. Kapre
Journal: Applied Physics Letters
Appl. Phys. Lett. 63, 3500–3502 (1993)
https://doi.org/10.1063/1.110132
Published: December 1993
View article titled, Monolayer chemical beam etching: Reverse molecular beam epitaxy
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Journal Articles

Elimination of light scattering from grating irregularities by using a quantum well grating in index or gain‐coupled distributed feedback lasers

S. N. G. Chu, W. T. Tsang, F. S. Choa, R. A. Logan, E. J. Flynn, D. L. Coblentz
Journal: Applied Physics Letters
Appl. Phys. Lett. 63, 1886–1888 (1993)
https://doi.org/10.1063/1.110637
Published: October 1993
View article titled, Elimination of light scattering from grating irregularities by using a quantum well grating in index or gain‐coupled distributed feedback lasers
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Journal Articles

InGaAs/InGaAsP integrated tunable detector grown by chemical beam epitaxy

F. S. Choa, W. T. Tsang, R. A. Logan, R. P. Gnall, T. L. Koch, C. A. Burrus, M. C. Wu, Y. K. Chen, R. Kapre
Journal: Applied Physics Letters
Appl. Phys. Lett. 63, 1836–1838 (1993)
https://doi.org/10.1063/1.110678
Published: September 1993
View article titled, InGaAs/InGaAsP integrated tunable detector grown by chemical beam epitaxy
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Journal Articles

Zinc doping of Ga0.51In0.49P grown on GaAs(100) substrates by chemical beam epitaxy

R. M. Kapre, W. T. Tsang, N. T. Ha, M. C. Wu, Y. K. Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 62, 2212–2214 (1993)
https://doi.org/10.1063/1.109419
Published: May 1993
View article titled, Zinc doping of Ga<sub>0.51</sub>In<sub>0.49</sub>P grown on GaAs(100) substrates by chemical beam epitaxy
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Journal Articles

Reactive chemical beam etching of InP inside a chemical beam epitaxial growth chamber using phosphorus trichloride

W. T. Tsang, R. Kapre, P. F. Sciortino, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 62, 2084–2086 (1993)
https://doi.org/10.1063/1.109486
Published: April 1993
View article titled, Reactive chemical beam etching of InP inside a chemical beam epitaxial growth chamber using phosphorus trichloride
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Journal Articles

Low‐threshold InGaAs strained‐layer quantum well lasers (λ=0.98 μm) with GaInP cladding layers prepared by chemical beam epitaxy

W. T. Tsang, R. Kapre, M. C. Wu, Y. K. Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 61, 755–757 (1992)
https://doi.org/10.1063/1.107788
Published: August 1992
View article titled, Low‐threshold InGaAs strained‐layer quantum well lasers (λ=0.98 μm) with GaInP cladding layers prepared by chemical beam epitaxy
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Journal Articles

Semiconductor distributed feedback lasers with quantum well or superlattice gratings for index or gain‐coupled optical feedback

W. T. Tsang, F. S. Choa, M. C. Wu, Y. K. Chen, R. A. Logan, S. N. G. Chu, A. M. Sergent, C. A. Burrus
Journal: Applied Physics Letters
Appl. Phys. Lett. 60, 2580–2582 (1992)
https://doi.org/10.1063/1.106915
Published: May 1992
View article titled, Semiconductor distributed feedback lasers with quantum well or superlattice gratings for index or gain‐coupled optical feedback
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Journal Articles

Doping in semiconductors with variable activation energy

W. T. Tsang, E. F. Schubert, J. E. Cunningham
Journal: Applied Physics Letters
Appl. Phys. Lett. 60, 115–117 (1992)
https://doi.org/10.1063/1.107365
Published: January 1992
View article titled, Doping in semiconductors with variable activation energy
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Journal Articles

Reduced temperature dependence of threshold current by broadband enhanced feedback: A new approach and demonstration

W. T. Tsang, F. S. Choa, R. A. Logan, T. Tanbun‐Ek, A. M. Sergent, K. W. Wecht
Journal: Applied Physics Letters
Appl. Phys. Lett. 60, 18–20 (1992)
https://doi.org/10.1063/1.107351
Published: January 1992
View article titled, Reduced temperature dependence of threshold current by broadband enhanced feedback: A new approach and demonstration
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Journal Articles

Low‐threshold and high‐temperature operation of 1.55‐μm self‐aligned ridge‐waveguide multiple‐quantum‐well lasers grown by chemical‐beam epitaxy

K.‐Y. Liou, W. T. Tsang, F. S. Choa, E. C. Burrows, G. Raybon, C. A. Burrus
Journal: Applied Physics Letters
Appl. Phys. Lett. 59, 3381–3383 (1991)
https://doi.org/10.1063/1.105681
Published: December 1991
View article titled, Low‐threshold and high‐temperature operation of 1.55‐μm self‐aligned ridge‐waveguide multiple‐quantum‐well lasers grown by chemical‐beam epitaxy
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Journal Articles

1.3 μm InGaAsP/InP multiquantum well buried heterostructure lasers grown by chemical‐beam epitaxy

W. T. Tsang, F. S. Choa, R. A. Logan, T. Tanbun‐Ek, M. C. Wu, Y. K. Chen, A. M. Sergent, K. W. Wecht
Journal: Applied Physics Letters
Appl. Phys. Lett. 59, 3084–3086 (1991)
https://doi.org/10.1063/1.105796
Published: December 1991
View article titled, 1.3 μm InGaAsP/InP multiquantum well buried heterostructure lasers grown by chemical‐beam epitaxy
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Journal Articles

High reflectivity 1.55 μm InP/InGaAsP Bragg mirror grown by chemical beam epitaxy

F. S. Choa, K. Tai, W. T. Tsang, S. N. G. Chu
Journal: Applied Physics Letters
Appl. Phys. Lett. 59, 2820–2822 (1991)
https://doi.org/10.1063/1.105870
Published: November 1991
View article titled, High reflectivity 1.55 μm InP/InGaAsP Bragg mirror grown by chemical beam epitaxy
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Journal Articles

1.5 μm wavelength InGaAs/InGaAsP distributed feedback multi‐quantum‐well lasers grown by chemical beam epitaxy

W. T. Tsang, F. S. Choa, M. C. Wu, Y. K. Chen, R. A. Logan, T. Tanbun‐Ek, S. N. G. Chu, K. Tai, A. M. Sergent, K. W. Wecht
Journal: Applied Physics Letters
Appl. Phys. Lett. 59, 2375–2377 (1991)
https://doi.org/10.1063/1.106020
Published: November 1991
View article titled, 1.5 μm wavelength InGaAs/InGaAsP distributed feedback multi‐quantum‐well lasers grown by chemical beam epitaxy
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