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Journal Articles

Gain recovery dynamics in active type-II semiconductor heterostructures

Open Access
F. Schäfer, M. Stein, J. Lorenz, F. Dobener, C. Ngo, J. T. Steiner, C. Fuchs, W. Stolz, K. Volz, T. Meier, J. Hader, J. V. Moloney, S. W. Koch, S. Chatterjee
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 082104 (2023)
https://doi.org/10.1063/5.0128777
Published: February 2023
View article titled, Gain recovery dynamics in active type-II semiconductor heterostructures
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Journal Articles

Femtosecond time-resolved nonlinear optical spectroscopy of charge transfer at the buried GaP/Si(001) interface

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G. Mette, J. E. Zimmermann, A. Lerch, K. Brixius, J. Güdde, A. Beyer, M. Dürr, K. Volz, W. Stolz, U. Höfer
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 081602 (2020)
https://doi.org/10.1063/5.0021092
Published: August 2020
View article titled, Femtosecond time-resolved nonlinear optical spectroscopy of charge transfer at the buried GaP/Si(001) interface
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Includes: Supplementary data
Journal Articles

Effect of the interface morphology on the lateral electron transport in (001) GaP/Si heterostructures

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L. Ostheim, P. J. Klar, Y. Moryson, M. Rohnke, A. Beyer, M. Volk, M. Munde, W. Stolz, K. Volz
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 215704 (2019)
https://doi.org/10.1063/1.5124049
Published: December 2019
View article titled, Effect of the interface morphology on the lateral electron transport in (001) GaP/Si heterostructures
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Journal Articles

Linewidth broadening and tunneling of excitons bound to N pairs in dilute GaAs:N

Free
B. Fluegel, D. A. Beaton, K. Alberi, K. Volz, W. Stolz
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 145704 (2019)
https://doi.org/10.1063/1.5086181
Published: April 2019
View article titled, Linewidth broadening and tunneling of excitons bound to N pairs in dilute GaAs:N
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Journal Articles

1 eV Ga(NAsSb) grown by MOVPE using di-tertiary-butyl-arsano-amine (DTBAA)

Open Access
E. Sterzer, O. Maßmeyer, L. Nattermann, K. Jandieri, S. Gupta, A. Beyer, B. Ringler, C. von Hänisch, W. Stolz, K. Volz
Journal: AIP Advances
AIP Advances 8, 055329 (2018)
https://doi.org/10.1063/1.5034083
Published: May 2018
View article titled, 1 eV Ga(NAsSb) grown by MOVPE using di-tertiary-butyl-arsano-amine (DTBAA)
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Journal Articles

Gain spectroscopy of a type-II VECSEL chip

Free
C. Lammers, M. Stein, C. Berger, C. Möller, C. Fuchs, A. Ruiz Perez, A. Rahimi-Iman, J. Hader, J. V. Moloney, W. Stolz, S. W. Koch, M. Koch
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 232107 (2016)
https://doi.org/10.1063/1.4971333
Published: December 2016
View article titled, Gain spectroscopy of a type-II VECSEL chip
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Journal Articles

Band offset in (Ga, In)As/Ga(As, Sb) heterostructures

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S. Gies, M. J. Weseloh, C. Fuchs, W. Stolz, J. Hader, J. V. Moloney, S. W. Koch, W. Heimbrodt
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 204303 (2016)
https://doi.org/10.1063/1.4968541
Published: November 2016
View article titled, Band offset in (Ga, In)As/Ga(As, Sb) heterostructures
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Journal Articles

Influence of growth temperature and disorder on spectral and temporal properties of Ga(NAsP) heterostructures

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R. Woscholski, S. Gies, M. Wiemer, M. K. Shakfa, A. Rahimi-Iman, P. Ludewig, S. Reinhard, K. Jandieri, S. D. Baranovskii, W. Heimbrodt, K. Volz, W. Stolz, M. Koch
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 145707 (2016)
https://doi.org/10.1063/1.4945434
Published: April 2016
View article titled, Influence of growth temperature and disorder on spectral and temporal properties of Ga(NAsP) heterostructures
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Journal Articles

Type-II vertical-external-cavity surface-emitting laser with Watt level output powers at 1.2 μm

Free
C. Möller, C. Fuchs, C. Berger, A. Ruiz Perez, M. Koch, J. Hader, J. V. Moloney, S. W. Koch, W. Stolz
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 071102 (2016)
https://doi.org/10.1063/1.4942103
Published: February 2016
View article titled, Type-II vertical-external-cavity surface-emitting laser with Watt level output powers at 1.2 μm
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Journal Articles

Excitonic transitions in highly efficient (GaIn)As/Ga(AsSb) type-II quantum-well structures

Free
S. Gies, C. Kruska, C. Berger, P. Hens, C. Fuchs, A. Ruiz Perez, N. W. Rosemann, J. Veletas, S. Chatterjee, W. Stolz, S. W. Koch, J. Hader, J. V. Moloney, W. Heimbrodt
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 182104 (2015)
https://doi.org/10.1063/1.4935212
Published: November 2015
View article titled, Excitonic transitions in highly efficient (GaIn)As/Ga(AsSb) type-II quantum-well structures
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Journal Articles

Compositional dependence of the band gap in Ga(NAsP) quantum well heterostructures

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K. Jandieri, P. Ludewig, T. Wegele, A. Beyer, B. Kunert, P. Springer, S. D. Baranovskii, S. W. Koch, K. Volz, W. Stolz
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 065701 (2015)
https://doi.org/10.1063/1.4928331
Published: August 2015
View article titled, Compositional dependence of the band gap in Ga(NAsP) quantum well heterostructures
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Journal Articles

Single-photon emission at a rate of 143 MHz from a deterministic quantum-dot microlens triggered by a mode-locked vertical-external-cavity surface-emitting laser

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A. Schlehahn, M. Gaafar, M. Vaupel, M. Gschrey, P. Schnauber, J.-H. Schulze, S. Rodt, A. Strittmatter, W. Stolz, A. Rahimi-Iman, T. Heindel, M. Koch, S. Reitzenstein
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 041105 (2015)
https://doi.org/10.1063/1.4927429
Published: July 2015
View article titled, Single-photon emission at a rate of 143 MHz from a deterministic quantum-dot microlens triggered by a mode-locked vertical-external-cavity surface-emitting laser
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Journal Articles

Novel type-II material system for laser applications in the near-infrared regime

Open Access
C. Berger, C. Möller, P. Hens, C. Fuchs, W. Stolz, S. W. Koch, A. Ruiz Perez, J. Hader, J. V. Moloney
Journal: AIP Advances
AIP Advances 5, 047105 (2015)
https://doi.org/10.1063/1.4917180
Published: April 2015
View article titled, Novel type-II material system for laser applications in the near-infrared regime
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Journal Articles

Thermal quenching of photoluminescence in Ga(AsBi)

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M. K. Shakfa, M. Wiemer, P. Ludewig, K. Jandieri, K. Volz, W. Stolz, S. D. Baranovskii, M. Koch
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 025709 (2015)
https://doi.org/10.1063/1.4905687
Published: January 2015
View article titled, Thermal quenching of photoluminescence in Ga(AsBi)
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Journal Articles

Effect of boron localized states on the conduction band transport in BxGa1−xP

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S. Petznick, L. Ostheim, P. J. Klar, S. Liebich, K. Volz, W. Stolz
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 222105 (2014)
https://doi.org/10.1063/1.4903244
Published: December 2014
View article titled, Effect of boron localized states on the conduction band transport in BxGa1−xP
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Journal Articles

Temperature-dependent quantum efficiency of Ga(N,As,P) quantum wells

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N. W. Rosemann, B. Metzger, B. Kunert, K. Volz, W. Stolz, S. Chatterjee
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 252105 (2013)
https://doi.org/10.1063/1.4852575
Published: December 2013
View article titled, Temperature-dependent quantum efficiency of Ga(N,As,P) quantum wells
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Journal Articles

Atomic structure of (110) anti-phase boundaries in GaP on Si(001)

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A. Beyer, B. Haas, K. I. Gries, K. Werner, M. Luysberg, W. Stolz, K. Volz
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 032107 (2013)
https://doi.org/10.1063/1.4815985
Published: July 2013
View article titled, Atomic structure of (110) anti-phase boundaries in GaP on Si(001)
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Journal Articles

Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser

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P. Ludewig, N. Knaub, N. Hossain, S. Reinhard, L. Nattermann, I. P. Marko, S. R. Jin, K. Hild, S. Chatterjee, W. Stolz, S. J. Sweeney, K. Volz
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 242115 (2013)
https://doi.org/10.1063/1.4811736
Published: June 2013
View article titled, Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser
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Journal Articles

On the measurement of the thermal impedance in vertical-external-cavity surface-emitting lasers

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J. Hader, T.-L. Wang, J. V. Moloney, B. Heinen, M. Koch, S. W. Koch, B. Kunert, W. Stolz
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 153102 (2013)
https://doi.org/10.1063/1.4802586
Published: April 2013
View article titled, On the measurement of the thermal impedance in vertical-external-cavity surface-emitting lasers
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Journal Articles

Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) Silicon using a GaSb/GaP accommodation layer

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L. Desplanque, S. El Kazzi, C. Coinon, S. Ziegler, B. Kunert, A. Beyer, K. Volz, W. Stolz, Y. Wang, P. Ruterana, X. Wallart
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 142111 (2012)
https://doi.org/10.1063/1.4758292
Published: October 2012
View article titled, Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) Silicon using a GaSb/GaP accommodation layer
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