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Journal Articles

Band gap renormalization in n-type GeSn alloys made by ion implantation and flash lamp annealing

S. Prucnal, Y. Berencén, M. Wang, L. Rebohle, R. Kudrawiec, M. Polak, V. Zviagin, R. Schmidt-Grund, M. Grundmann, J. Grenzer, M. Turek, A. Droździel, K. Pyszniak, J. Zuk, M. Helm, W. Skorupa, S. Zhou
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 203105 (2019)
https://doi.org/10.1063/1.5082889
Published: May 2019
View article titled, Band gap renormalization in n-type GeSn alloys made by ion implantation and flash lamp annealing
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Journal Articles

Engineering of optical and electrical properties of ZnO by non-equilibrium thermal processing: The role of zinc interstitials and zinc vacancies

S. Prucnal, Jiada Wu, Y. Berencén, M. O. Liedke, A. Wagner, F. Liu, M. Wang, L. Rebohle, S. Zhou, Hua Cai, W. Skorupa
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 035303 (2017)
https://doi.org/10.1063/1.4994796
Published: July 2017
View article titled, Engineering of optical and electrical properties of ZnO by non-equilibrium thermal processing: The role of zinc interstitials and zinc vacancies
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Journal Articles

The photoluminescence response to structural changes of Yb implanted ZnO crystals subjected to non-equilibrium processing

R. Ratajczak, S. Prucnal, E. Guziewicz, C. Mieszczynski, D. Snigurenko, M. Stachowicz, W. Skorupa, A. Turos
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 075101 (2017)
https://doi.org/10.1063/1.4976207
Published: February 2017
View article titled, The photoluminescence response to structural changes of Yb implanted ZnO crystals subjected to non-equilibrium processing
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Journal Articles

Large magnetoresistance of insulating silicon films with superconducting nanoprecipitates

V. Heera, J. Fiedler, W. Skorupa
Journal: AIP Advances
AIP Advances 6, 105203 (2016)
https://doi.org/10.1063/1.4964931
Published: October 2016
View article titled, Large magnetoresistance of insulating silicon films with superconducting nanoprecipitates
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Journal Articles

The effect of millisecond flash lamp annealing on electrical and structural properties of ZnO:Al/Si structures

P. F. Lindberg, F. Lipp Bregolin, K. Wiesenhütter, U. Wiesenhütter, H. N. Riise, L. Vines, S. Prucnal, W. Skorupa, B. G. Svensson, E. V. Monakhov
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 185305 (2016)
https://doi.org/10.1063/1.4948666
Published: May 2016
View article titled, The effect of millisecond flash lamp annealing on electrical and structural properties of ZnO:Al/Si structures
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Journal Articles

Resistance fluctuations in insulating silicon films with superconducting nanoprecipitates – superconductor-to-metal or vortex matter phase transition?

V. Heera, J. Fiedler, W. Skorupa
Journal: AIP Advances
AIP Advances 5, 117219 (2015)
https://doi.org/10.1063/1.4935871
Published: November 2015
View article titled, Resistance fluctuations in insulating silicon films with superconducting nanoprecipitates – superconductor-to-metal or vortex matter phase transition?
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Journal Articles

A comprehensive study of the magnetic, structural, and transport properties of the III-V ferromagnetic semiconductor InMnP

M. Khalid, Kun Gao, E. Weschke, R. Hübner, C. Baehtz, O. Gordan, G. Salvan, D. R. T. Zahn, W. Skorupa, M. Helm, Shengqiang Zhou
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 043906 (2015)
https://doi.org/10.1063/1.4906562
Published: January 2015
View article titled, A comprehensive study of the magnetic, structural, and transport properties of the III-V ferromagnetic semiconductor InMnP
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Journal Articles

Optoelectronic properties of ZnO film on silicon after SF6 plasma treatment and milliseconds annealing

S. Prucnal, Kun Gao, Shengqiang Zhou, Jiada Wu, Hua Cai, Ovidiu D. Gordan, Dietrich R. T. Zahn, G. Larkin, M. Helm, W. Skorupa
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 221903 (2014)
https://doi.org/10.1063/1.4903074
Published: December 2014
View article titled, Optoelectronic properties of ZnO film on silicon after SF<sub>6</sub> plasma treatment and milliseconds annealing
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Journal Articles

The electroluminescence mechanism of Er3+ in different silicon oxide and silicon nitride environments

L. Rebohle, Y. Berencén, R. Wutzler, M. Braun, D. Hiller, J. M. Ramírez, B. Garrido, M. Helm, W. Skorupa
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 123104 (2014)
https://doi.org/10.1063/1.4896588
Published: September 2014
View article titled, The electroluminescence mechanism of Er<sup>3+</sup> in different silicon oxide and silicon nitride environments
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Journal Articles

Nature of red luminescence band in research-grade ZnO single crystals: A “self-activated” configurational transition

Y. N. Chen, S. J. Xu, C. C. Zheng, J. Q. Ning, F. C. C. Ling, W. Anwand, G. Brauer, W. Skorupa
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 041912 (2014)
https://doi.org/10.1063/1.4892356
Published: August 2014
View article titled, Nature of red luminescence band in research-grade ZnO single crystals: A “self-activated” configurational transition
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Journal Articles

Ge1−xSnx alloys synthesized by ion implantation and pulsed laser melting

Kun Gao, S. Prucnal, R. Huebner, C. Baehtz, I. Skorupa, Yutian Wang, W. Skorupa, M. Helm, Shengqiang Zhou
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 042107 (2014)
https://doi.org/10.1063/1.4891848
Published: July 2014
View article titled, Ge<sub>1−x</sub>Sn<sub>x</sub> alloys synthesized by ion implantation and pulsed laser melting
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Journal Articles

Formation and photoluminescence of GaAs1−xNx dilute nitride achieved by N-implantation and flash lamp annealing

Kun Gao (高昆), S. Prucnal, W. Skorupa, M. Helm, Shengqiang Zhou
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 012107 (2014)
https://doi.org/10.1063/1.4890114
Published: July 2014
View article titled, Formation and photoluminescence of GaAs<sub>1−x</sub>N<sub>x</sub> dilute nitride achieved by N-implantation and flash lamp annealing
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Journal Articles

High-fluence Ga-implanted silicon—The effect of annealing and cover layers

J. Fiedler, V. Heera, R. Hübner, M. Voelskow, S. Germer, B. Schmidt, W. Skorupa
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 024502 (2014)
https://doi.org/10.1063/1.4887450
Published: July 2014
View article titled, High-fluence Ga-implanted silicon—The effect of annealing and cover layers
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Journal Articles

Strong electroluminescence from SiO2-Tb2O3-Al2O3 mixed layers fabricated by atomic layer deposition

L. Rebohle, M. Braun, R. Wutzler, B. Liu, J. M. Sun, M. Helm, W. Skorupa
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 251113 (2014)
https://doi.org/10.1063/1.4885418
Published: June 2014
View article titled, Strong electroluminescence from SiO<sub>2</sub>-Tb<sub>2</sub>O<sub>3</sub>-Al<sub>2</sub>O<sub>3</sub> mixed layers fabricated by atomic layer deposition
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Journal Articles

Suppression of tin precipitation in SiSn alloy layers by implanted carbon

P. I. Gaiduk, J. Lundsgaard Hansen, A. Nylandsted Larsen, F. L. Bregolin, W. Skorupa
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 231903 (2014)
https://doi.org/10.1063/1.4882175
Published: June 2014
View article titled, Suppression of tin precipitation in SiSn alloy layers by implanted carbon
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Journal Articles

Hydrogen engineering via plasma immersion ion implantation and flash lamp annealing in silicon-based solar cell substrates

F. L. Bregolin, K. Krockert, S. Prucnal, L. Vines, R. Hübner, B. G. Svensson, K. Wiesenhütter, H.-J. Möller, W. Skorupa
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 064505 (2014)
https://doi.org/10.1063/1.4865737
Published: February 2014
View article titled, Hydrogen engineering via plasma immersion ion implantation and flash lamp annealing in silicon-based solar cell substrates
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Journal Articles

Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices

Y. Berencén, R. Wutzler, L. Rebohle, D. Hiller, J. M. Ramírez, J. A. Rodríguez, W. Skorupa, B. Garrido
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 111102 (2013)
https://doi.org/10.1063/1.4820836
Published: September 2013
View article titled, Intense green-yellow electroluminescence from Tb<sup>+</sup>-implanted silicon-rich silicon nitride/oxide light emitting devices
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Journal Articles

Origin and enhancement of the 1.3 μm luminescence from GaAs treated by ion-implantation and flash lamp annealing

Kun Gao, S. Prucnal, W. Skorupa, M. Helm, Shengqiang Zhou
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 093511 (2013)
https://doi.org/10.1063/1.4820451
Published: September 2013
View article titled, Origin and enhancement of the 1.3 <em>μ</em>m luminescence from GaAs treated by ion-implantation and flash lamp annealing
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Journal Articles

Phosphorus in-diffusion from a surface source by millisecond flash lamp annealing for shallow emitter solar cells

H. B. Normann, L. Vines, V. Privitera, W. Skorupa, T. Schumann, B. G. Svensson, E. V. Monakhov
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 132108 (2013)
https://doi.org/10.1063/1.4800781
Published: April 2013
View article titled, Phosphorus in-diffusion from a surface source by millisecond flash lamp annealing for shallow emitter solar cells
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Journal Articles

Emission bands of nitrogen-implantation induced luminescent centers in ZnO crystals: Experiment and theory

X. M. Dai, S. J. Xu, C. C. Ling, G. Brauer, W. Anwand, W. Skorupa
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 046102 (2012)
https://doi.org/10.1063/1.4749402
Published: August 2012
View article titled, Emission bands of nitrogen-implantation induced luminescent centers in ZnO crystals: Experiment and theory
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