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Journal Articles

Exciton localization and dynamics in GaNAsP nanowires

M. Jansson, W. M. Chen, I. A. Buyanova
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 044303 (2024)
https://doi.org/10.1063/5.0179114
Published: January 2024
View article titled, Exciton localization and dynamics in GaNAsP nanowires
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Journal Articles

Color center in β -Ga2O3 emitting at the telecom range

J. E. Stehr, M. Jansson, S. J. Pearton, J. S. McCloy, J. Jesenovec, B. L. Dutton, M. D. McCluskey, W. M. Chen, I. A. Buyanova
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 042104 (2024)
https://doi.org/10.1063/5.0179921
Published: January 2024
View article titled, Color center in <em>β</em> -Ga<sub>2</sub>O<sub>3</sub> emitting at the telecom range
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Includes: Supplementary data
Journal Articles

GaAs/GaNAs core-multishell nanowires with nitrogen composition exceeding 2%

M. Yukimune, R. Fujiwara, H. Ikeda, K. Yano, K. Takada, M. Jansson, W. M. Chen, I. A. Buyanova, F. Ishikawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 011901 (2018)
https://doi.org/10.1063/1.5029388
Published: July 2018
View article titled, GaAs/GaNAs core-multishell nanowires with nitrogen composition exceeding 2%
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Journal Articles

Defect formation in GaAs/GaNxAs1-x core/shell nanowires

J. E. Stehr, S. L. Chen, M. Jansson, F. Ishikawa, W. M. Chen, I. A. Buyanova
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 203103 (2016)
https://doi.org/10.1063/1.4967721
Published: November 2016
View article titled, Defect formation in GaAs/GaN<sub>x</sub>As<sub>1-x</sub> core/shell nanowires
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Includes: Supplementary data
Journal Articles

Thermal stability of the prominent compensating (AlZn–VZn) center in ZnO

J. E. Stehr, W. M. Chen, B. G. Svensson, I. A. Buyanova
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 105702 (2016)
https://doi.org/10.1063/1.4943263
Published: March 2016
View article titled, Thermal stability of the prominent compensating (Al<sub>Zn</sub>–V<sub>Zn</sub>) center in ZnO
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Journal Articles

Size dependence of electron spin dephasing in InGaAs quantum dots

Y. Q. Huang, Y. Puttisong, I. A. Buyanova, X. J. Yang, A. Subagyo, K. Sueoka, A. Murayama, W. M. Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 093109 (2015)
https://doi.org/10.1063/1.4914084
Published: March 2015
View article titled, Size dependence of electron spin dephasing in InGaAs quantum dots
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Includes: Supplementary data
Journal Articles

Dual-wavelength excited photoluminescence spectroscopy of deep-level hole traps in Ga(In)NP

D. Dagnelund, Y. Q. Huang, C. W. Tu, H. Yonezu, I. A. Buyanova, W. M. Chen
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 015701 (2015)
https://doi.org/10.1063/1.4905274
Published: January 2015
View article titled, Dual-wavelength excited photoluminescence spectroscopy of deep-level hole traps in Ga(In)NP
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Journal Articles

Origin of radiative recombination and manifestations of localization effects in GaAs/GaNAs core/shell nanowires

S. L. Chen, S. Filippov, Fumitaro Ishikawa, W. M. Chen, I. A. Buyanova
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 253106 (2014)
https://doi.org/10.1063/1.4905090
Published: December 2014
View article titled, Origin of radiative recombination and manifestations of localization effects in GaAs/GaNAs core/shell nanowires
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Journal Articles

Raman spectroscopy of GaP/GaNP core/shell nanowires

A. Dobrovolsky, S. Sukrittanon, Y. J. Kuang, C. W. Tu, W. M. Chen, I. A. Buyanova
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 193102 (2014)
https://doi.org/10.1063/1.4901446
Published: November 2014
View article titled, Raman spectroscopy of GaP/GaNP core/shell nanowires
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Journal Articles

Anomalous spectral dependence of optical polarization and its impact on spin detection in InGaAs/GaAs quantum dots

Y. Puttisong, Y. Q. Huang, I. A. Buyanova, X. J. Yang, A. Subagyo, K. Sueoka, A. Murayama, W. M. Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 132106 (2014)
https://doi.org/10.1063/1.4897306
Published: October 2014
View article titled, Anomalous spectral dependence of optical polarization and its impact on spin detection in InGaAs/GaAs quantum dots
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Journal Articles

Growth and characterization of dilute nitride GaNxP1−x nanowires and GaNxP1−x/GaNyP1−y core/shell nanowires on Si (111) by gas source molecular beam epitaxy

S. Sukrittanon, Y. J. Kuang (邝彦瑾), A. Dobrovolsky, Won-Mo Kang, Ja-Soon Jang, Bong-Joong Kim, W. M. Chen, I. A. Buyanova, C. W. Tu
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 072107 (2014)
https://doi.org/10.1063/1.4893745
Published: August 2014
View article titled, Growth and characterization of dilute nitride GaN<sub>x</sub>P<sub>1−x</sub> nanowires and GaN<sub>x</sub>P<sub>1−x</sub>/GaN<sub>y</sub>P<sub>1−y</sub> core/shell nanowires on Si (111) by gas source molecular beam epitaxy
Open the PDF for Growth and characterization of dilute nitride GaN<sub>x</sub>P<sub>1−x</sub> nanowires and GaN<sub>x</sub>P<sub>1−x</sub>/GaN<sub>y</sub>P<sub>1−y</sub> core/shell nanowires on Si (111) by gas source molecular beam epitaxy in another window
Journal Articles

Defect properties of ZnO nanowires

J. E. Stehr, M. Devika, N. Koteeswara Reddy, C. W. Tu, W. M. Chen, I. A. Buyanova
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1583, 272–276 (2014)
https://doi.org/10.1063/1.4865651
Published: February 2014
View article titled, Defect properties of ZnO nanowires
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Journal Articles

Magneto-optical properties and recombination dynamics of isoelectronic bound excitons in ZnO

S. L. Chen, W. M. Chen, I. A. Buyanova
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1583, 186–189 (2014)
https://doi.org/10.1063/1.4865632
Published: February 2014
View article titled, Magneto-optical properties and recombination dynamics of isoelectronic bound excitons in ZnO
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Journal Articles

Identification of an isolated arsenic antisite defect in GaAsBi

D. Dagnelund, J. Puustinen, M. Guina, W. M. Chen, I. A. Buyanova
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 052110 (2014)
https://doi.org/10.1063/1.4864644
Published: February 2014
View article titled, Identification of an isolated arsenic antisite defect in GaAsBi
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Journal Articles

Effects of Ni-coating on ZnO nanowires: A Raman scattering study

S. Filippov, X. J. Wang, M. Devika, N. Koteeswara Reddy, C. W. Tu, W. M. Chen, I. A. Buyanova
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 214302 (2013)
https://doi.org/10.1063/1.4807912
Published: June 2013
View article titled, Effects of Ni-coating on ZnO nanowires: A Raman scattering study
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Journal Articles

Dynamics of donor bound excitons in ZnO

S. L. Chen, W. M. Chen, I. A. Buyanova
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 121103 (2013)
https://doi.org/10.1063/1.4798531
Published: March 2013
View article titled, Dynamics of donor bound excitons in ZnO
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Journal Articles

Defects in N, O and N, Zn implanted ZnO bulk crystals

J. E. Stehr, X. J. Wang, S. Filippov, S. J. Pearton, I. G. Ivanov, W. M. Chen, I. A. Buyanova
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 103509 (2013)
https://doi.org/10.1063/1.4795261
Published: March 2013
View article titled, Defects in N, O and N, Zn implanted ZnO bulk crystals
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Journal Articles

Optically detected magnetic resonance studies of point defects in quaternary GaNAsP epilayers grown by vapor phase epitaxy

D. Dagnelund, Jan Stehr, A. Yu. Egorov, W. M. Chen, I. A. Buyanova
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 021910 (2013)
https://doi.org/10.1063/1.4781459
Published: January 2013
View article titled, Optically detected magnetic resonance studies of point defects in quaternary GaNAsP epilayers grown by vapor phase epitaxy
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Journal Articles

Erratum: “Donor bound excitons involving a hole from the B valence band in ZnO: Time resolved and magneto-photoluminescence studies” [Appl. Phys. Lett. 99, 091909 (2011)]

S. L. Chen, W. M. Chen, I. A. Buyanova
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 199901 (2012)
https://doi.org/10.1063/1.4766168
Published: November 2012
View article titled, Erratum: “Donor bound excitons involving a hole from the B valence band in ZnO: Time resolved and magneto-photoluminescence studies” [Appl. Phys. Lett. 99, 091909 (2011)]
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Journal Articles

Mechanism for radiative recombination and defect properties of GaP/GaNP core/shell nanowires

A. Dobrovolsky, J. E. Stehr, S. L. Chen, Y. J. Kuang, S. Sukrittanon, C. W. Tu, W. M. Chen, I. A. Buyanova
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 163106 (2012)
https://doi.org/10.1063/1.4760273
Published: October 2012
View article titled, Mechanism for radiative recombination and defect properties of GaP/GaNP core/shell nanowires
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