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1-20 of 113
W. M. Chen
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Journal Articles
Journal Articles
J. E. Stehr, M. Jansson, S. J. Pearton, J. S. McCloy, J. Jesenovec, B. L. Dutton, M. D. McCluskey, W. M. Chen, I. A. Buyanova
Journal:
Applied Physics Letters
Appl. Phys. Lett. 124, 042104 (2024)
Published: January 2024
Includes: Supplementary data
Journal Articles
GaAs/GaNAs core-multishell nanowires with nitrogen composition exceeding 2%
Available to PurchaseM. Yukimune, R. Fujiwara, H. Ikeda, K. Yano, K. Takada, M. Jansson, W. M. Chen, I. A. Buyanova, F. Ishikawa
Journal:
Applied Physics Letters
Appl. Phys. Lett. 113, 011901 (2018)
Published: July 2018
Journal Articles
Defect formation in GaAs/GaNxAs1-x core/shell nanowires
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 109, 203103 (2016)
Published: November 2016
Includes: Supplementary data
Journal Articles
Thermal stability of the prominent compensating (AlZn–VZn) center in ZnO
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 119, 105702 (2016)
Published: March 2016
Journal Articles
Size dependence of electron spin dephasing in InGaAs quantum dots
Available to PurchaseY. Q. Huang, Y. Puttisong, I. A. Buyanova, X. J. Yang, A. Subagyo, K. Sueoka, A. Murayama, W. M. Chen
Journal:
Applied Physics Letters
Appl. Phys. Lett. 106, 093109 (2015)
Published: March 2015
Includes: Supplementary data
Journal Articles
Dual-wavelength excited photoluminescence spectroscopy of deep-level hole traps in Ga(In)NP
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 117, 015701 (2015)
Published: January 2015
Journal Articles
Origin of radiative recombination and manifestations of localization effects in GaAs/GaNAs core/shell nanowires
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 105, 253106 (2014)
Published: December 2014
Journal Articles
Raman spectroscopy of GaP/GaNP core/shell nanowires
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 105, 193102 (2014)
Published: November 2014
Journal Articles
Anomalous spectral dependence of optical polarization and its impact on spin detection in InGaAs/GaAs quantum dots
Available to PurchaseY. Puttisong, Y. Q. Huang, I. A. Buyanova, X. J. Yang, A. Subagyo, K. Sueoka, A. Murayama, W. M. Chen
Journal:
Applied Physics Letters
Appl. Phys. Lett. 105, 132106 (2014)
Published: October 2014
Journal Articles
Growth and characterization of dilute nitride GaNxP1−x nanowires and GaNxP1−x/GaNyP1−y core/shell nanowires on Si (111) by gas source molecular beam epitaxy
Available to PurchaseS. Sukrittanon, Y. J. Kuang (邝彦瑾), A. Dobrovolsky, Won-Mo Kang, Ja-Soon Jang, Bong-Joong Kim, W. M. Chen, I. A. Buyanova, C. W. Tu
Journal:
Applied Physics Letters
Appl. Phys. Lett. 105, 072107 (2014)
Published: August 2014
Journal Articles
Defect properties of ZnO nanowires
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Journal:
AIP Conference Proceedings
AIP Conf. Proc. 1583, 272–276 (2014)
Published: February 2014
Journal Articles
Magneto-optical properties and recombination dynamics of isoelectronic bound excitons in ZnO
Available to Purchase
Journal:
AIP Conference Proceedings
AIP Conf. Proc. 1583, 186–189 (2014)
Published: February 2014
Journal Articles
Identification of an isolated arsenic antisite defect in GaAsBi
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 104, 052110 (2014)
Published: February 2014
Journal Articles
Effects of Ni-coating on ZnO nanowires: A Raman scattering study
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 113, 214302 (2013)
Published: June 2013
Journal Articles
Dynamics of donor bound excitons in ZnO
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 102, 121103 (2013)
Published: March 2013
Journal Articles
Defects in N, O and N, Zn implanted ZnO bulk crystals
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Journal:
Journal of Applied Physics
J. Appl. Phys. 113, 103509 (2013)
Published: March 2013
Journal Articles
Optically detected magnetic resonance studies of point defects in quaternary GaNAsP epilayers grown by vapor phase epitaxy
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 102, 021910 (2013)
Published: January 2013
Journal Articles
Journal Articles
Mechanism for radiative recombination and defect properties of GaP/GaNP core/shell nanowires
Available to PurchaseA. Dobrovolsky, J. E. Stehr, S. L. Chen, Y. J. Kuang, S. Sukrittanon, C. W. Tu, W. M. Chen, I. A. Buyanova
Journal:
Applied Physics Letters
Appl. Phys. Lett. 101, 163106 (2012)
Published: October 2012
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