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W. K. Loke
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Journal Articles

Study of a 1 eV GaNAsSb photovoltaic cell grown on a silicon substrate

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K. H. Tan, W. K. Loke, S. Wicaksono, D. Li, Y. R. Leong, S. F. Yoon, P. Sharma, T. Milakovich, M. T. Bulsara, E. A. Fitzgerald
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 103906 (2014)
https://doi.org/10.1063/1.4867082
Published: March 2014
View articletitled, Study of a 1 eV GaNAsSb photovoltaic cell grown on a silicon substrate
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Journal Articles

Low temperature grown GaNAsSb: A promising material for photoconductive switch application

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K. H. Tan, S. F. Yoon, S. Wicaksono, W. K. Loke, D. S. Li, N. Saadsaoud, C. Tripon-Canseliet, J. F. Lampin, D. Decoster, J. Chazelas
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 111113 (2013)
https://doi.org/10.1063/1.4820797
Published: September 2013
View articletitled, Low temperature grown GaNAsSb: A promising material for photoconductive switch application
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Journal Articles

Electroluminescence and structural characteristics of InAs / In 0.1 Ga 0.9 As quantum dots grown on graded Si 1 − x Ge x / Si substrate

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H. Tanoto, S. F. Yoon, K. L. Lew, W. K. Loke, C. Dohrman, E. A. Fitzgerald, L. J. Tang
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 141905 (2009)
https://doi.org/10.1063/1.3243984
Published: October 2009
View articletitled, Electroluminescence and structural characteristics of InAs / In 0.1 Ga 0.9 As quantum dots grown on graded Si 1 − x Ge x / Si substrate
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Journal Articles

Characteristics of 1.3   μ m InAs/InGaAs/GaAs quantum dot electroabsorption modulator

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C. Y. Ngo, S. F. Yoon, W. K. Loke, Q. Cao, D. R. Lim, Vincent Wong, Y. K. Sim, S. J. Chua
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 143108 (2009)
https://doi.org/10.1063/1.3119186
Published: April 2009
View articletitled, Characteristics of 1.3   μ m InAs/InGaAs/GaAs quantum dot electroabsorption modulator
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Journal Articles

GaNAsSb/GaAs waveguide photodetector with response up to 1.6   μ m grown by molecular beam epitaxy

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W. K. Loke, S. F. Yoon, Z. Xu, K. H. Tan, T. K. Ng, Y. K. Sim, S. Wicaksono, N. Saadsaoud, D. Decoster, J. Chazelas
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 081102 (2008)
https://doi.org/10.1063/1.2976124
Published: August 2008
View articletitled, GaNAsSb/GaAs waveguide photodetector with response up to 1.6   μ m grown by molecular beam epitaxy
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Journal Articles

GaNAsSb material for ultrafast microwave photoconductive switching application

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K. H. Tan, S. F. Yoon, C. Tripon-Canseliet, W. K. Loke, S. Wicaksono, S. Faci, N. Saadsaoud, J. F. Lampin, D. Decoster, J. Chazelas
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 063509 (2008)
https://doi.org/10.1063/1.2971204
Published: August 2008
View articletitled, GaNAsSb material for ultrafast microwave photoconductive switching application
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Journal Articles

Multigigabit 1.3 μ m   Ga N As Sb ∕ Ga As Photodetectors

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S. Fedderwitz, A. Stöhr, S. F. Yoon, K. H. Tan, M. Weiß, W. K. Loke, A. Poloczek, S. Wicaksono, D. Jäger
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 033509 (2008)
https://doi.org/10.1063/1.2960540
Published: July 2008
View articletitled, Multigigabit 1.3 μ m   Ga N As Sb ∕ Ga As Photodetectors
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Journal Articles

Structural and optical properties of stacked self-assembled In As ∕ In Ga As quantum dots on graded Si 1 − x Ge x ∕ Si substrate

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H. Tanoto, S. F. Yoon, C. Y. Ngo, W. K. Loke, C. Dohrman, E. A. Fitzgerald, B. Narayanan
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 213115 (2008)
https://doi.org/10.1063/1.2931699
Published: May 2008
View articletitled, Structural and optical properties of stacked self-assembled In As ∕ In Ga As quantum dots on graded Si 1 − x Ge x ∕ Si substrate
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Journal Articles

Heteroepitaxial growth of GaAs on (100) Ge/Si using migration enhanced epitaxy

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H. Tanoto, S. F. Yoon, W. K. Loke, K. P. Chen, E. A. Fitzgerald, C. Dohrman, B. Narayanan
Journal: Journal of Applied Physics
J. Appl. Phys. 103, 104901 (2008)
https://doi.org/10.1063/1.2921835
Published: May 2008
View articletitled, Heteroepitaxial growth of GaAs on (100) Ge/Si using migration enhanced epitaxy
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Journal Articles

1.55 μ m   Ga As ∕ Ga N As Sb ∕ Ga As optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy

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K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, Z. Xu, T. K. Ng, K. L. Lew, N. Saadsaoud, M. Zegaoui, D. Decoster, J. Chazelas
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 113513 (2008)
https://doi.org/10.1063/1.2898507
Published: March 2008
View articletitled, 1.55 μ m   Ga As ∕ Ga N As Sb ∕ Ga As optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy
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Journal Articles

Defect-induced trap-assisted tunneling current in GaInNAs grown on GaAs substrate

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W. K. Loke, S. F. Yoon, S. Wicaksono, K. H. Tan, K. L. Lew
Journal: Journal of Applied Physics
J. Appl. Phys. 102, 054501 (2007)
https://doi.org/10.1063/1.2775908
Published: September 2007
View articletitled, Defect-induced trap-assisted tunneling current in GaInNAs grown on GaAs substrate
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Journal Articles

Effect of growth temperature on defect states of GaAsSbN intrinsic layer in Ga As ∕ Ga As Sb N ∕ Ga As photodiode for 1.3 μ m application

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S. Wicaksono, S. F. Yoon, W. K. Loke, K. H. Tan, K. L. Lew, M. Zegaoui, J. P. Vilcot, D. Decoster, J. Chazelas
Journal: Journal of Applied Physics
J. Appl. Phys. 102, 044505 (2007)
https://doi.org/10.1063/1.2769801
Published: August 2007
View articletitled, Effect of growth temperature on defect states of GaAsSbN intrinsic layer in Ga As ∕ Ga As Sb N ∕ Ga As photodiode for 1.3 μ m application
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Journal Articles

GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μ m

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B. S. Ma, W. J. Fan, Y. X. Dang, W. K. Cheah, W. K. Loke, W. Liu, D. S. Li, S. F. Yoon, D. H. Zhang, H. Wang, C. H. Tung
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 051102 (2007)
https://doi.org/10.1063/1.2767185
Published: July 2007
View articletitled, GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μ m
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Journal Articles

High gain Al Ga As ∕ Ga As heterojunction bipolar transistor fabricated on Si Ge ∕ Si substrate

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K. L. Lew, S. F. Yoon, W. K. Loke, H. Tanoto, C. L. Dohrman, D. M. Isaacson, E. A. Fitzgerald
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 25, 902–905 (2007)
https://doi.org/10.1116/1.2740278
Published: May 2007
View articletitled, High gain Al Ga As ∕ Ga As heterojunction bipolar transistor fabricated on Si Ge ∕ Si substrate
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Journal Articles

High-speed picosecond pulse response GaNAsSb p - i - n photodetectors grown by rf plasma-assisted nitrogen molecular beam epitaxy

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K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, K. L. Lew, A. Stöhr, O. Ecin, A. Poloczek, A. Malcoci, D. Jäger
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 183515 (2007)
https://doi.org/10.1063/1.2730585
Published: May 2007
View articletitled, High-speed picosecond pulse response GaNAsSb p - i - n photodetectors grown by rf plasma-assisted nitrogen molecular beam epitaxy
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Journal Articles

Improvement of GaInNAs p ‐ i ‐ n photodetector responsivity by antimony incorporation

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W. K. Loke, S. F. Yoon, K. H. Tan, S. Wicaksono, W. J. Fan
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 033122 (2007)
https://doi.org/10.1063/1.2435990
Published: February 2007
View articletitled, Improvement of GaInNAs p ‐ i ‐ n photodetector responsivity by antimony incorporation
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Journal Articles

Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk Ga As 1 − x N x on GaAs

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W. K. Cheah, W. J. Fan, S. F. Yoon, W. K. Loke, R. Liu, A. T. S. Wee
Journal: Journal of Applied Physics
J. Appl. Phys. 99, 104908 (2006)
https://doi.org/10.1063/1.2199976
Published: May 2006
View articletitled, Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk Ga As 1 − x N x on GaAs
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Journal Articles

Effect of growth temperature on closely lattice-matched GaAsSbN intrinsic layer for GaAs-based 1.3 μ m   p - i - n photodetector

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S. Wicaksono, S. F. Yoon, W. K. Loke, K. H. Tan, B. K. Ng
Journal: Journal of Applied Physics
J. Appl. Phys. 99, 104502 (2006)
https://doi.org/10.1063/1.2195022
Published: May 2006
View articletitled, Effect of growth temperature on closely lattice-matched GaAsSbN intrinsic layer for GaAs-based 1.3 μ m   p - i - n photodetector
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Journal Articles

Mechanism of emission-energy tuning in InAs quantum dots using a thin upper confinement layer

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Z. Z. Sun, S. F. Yoon, W. K. Loke, C. Y. Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 203114 (2006)
https://doi.org/10.1063/1.2206248
Published: May 2006
View articletitled, Mechanism of emission-energy tuning in InAs quantum dots using a thin upper confinement layer
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Journal Articles

Growth of GaAs on vicinal Ge surface using low-temperature migration-enhanced epitaxy

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H. Tanoto, S. F. Yoon, W. K. Loke, E. A. Fitzgerald, C. Dohrman, B. Narayanan, M. T. Doan, C. H. Tung
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 152–156 (2006)
https://doi.org/10.1116/1.2151220
Published: January 2006
View articletitled, Growth of GaAs on vicinal Ge surface using low-temperature migration-enhanced epitaxy
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