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Journal Articles

Carrier dynamics in isoelectronic ZnSe 1 − x O x semiconductors

Y. C. Lin, H. L. Chung, W. C. Chou, W. K. Chen, W. H. Chang, C. Y. Chen, J. I. Chyi

Appl. Phys. Lett. 97, 041909 (2010)

https://doi.org/10.1063/1.3473776

Published: July 2010

View article titled, Carrier dynamics in isoelectronic ZnSe 1 − x O x semiconductors

Journal Articles

Effect of donor-acceptor concentration ratios on nonradiative energy transfer in closely packed CdTe quantum dots

Y. C. Lin, W. J. Wang, H. L. Chung, W. C. Chou, W. K. Chen, W. H. Chang, A. S. Susha, A. L. Rogach

Appl. Phys. Lett. 95, 133123 (2009)

https://doi.org/10.1063/1.3242371

Published: October 2009

View article titled, Effect of donor-acceptor concentration ratios on nonradiative energy transfer in closely packed CdTe quantum dots

Journal Articles

Time-resolved photoluminescence of isoelectronic traps in Zn Se 1 − x Te x semiconductor alloys

Y. C. Lin, W. C. Chou, W. C. Fan, J. T. Ku, F. K. Ke, W. J. Wang, S. L. Yang, W. K. Chen, W. H. Chang, C. H. Chia

Appl. Phys. Lett. 93, 241909 (2008)

https://doi.org/10.1063/1.3054162

Published: December 2008

View article titled, Time-resolved photoluminescence of isoelectronic traps in Zn Se 1 − x Te x semiconductor alloys

Journal Articles

Pressure-induced metallization and resonant Raman scattering in Zn 1 − x Mn x Te

Y. C. Lin, W. C. Fan, C. H. Chiu, F. K. Ke, S. L. Yang, D. S. Chuu, M. C. Lee, W. K. Chen, W. H. Chang, W. C. Chou, J. S. Hsu, J. L. Shen

J. Appl. Phys. 104, 013503 (2008)

https://doi.org/10.1063/1.2949707

Published: July 2008

View article titled, Pressure-induced metallization and resonant Raman scattering in Zn 1 − x Mn x Te

Journal Articles

Raman scattering of longitudinal-optical-phonon-plasmon coupling in Cl-doped ZnSe under high pressure

Y. C. Lin, C. H. Chiu, W. C. Fan, C. H. Chia, S. L. Yang, D. S. Chuu, M. C. Lee, W. K. Chen, W. H. Chang, W. C. Chou

J. Appl. Phys. 102, 123510 (2007)

https://doi.org/10.1063/1.2826936

Published: December 2007

View article titled, Raman scattering of longitudinal-optical-phonon-plasmon coupling in Cl-doped ZnSe under high pressure

Journal Articles

Effect of ZnSe partial capping on the ripening dynamics of CdSe quantum dots

Y. J. Lai, C. S. Yang, W. K. Chen, M. C. Lee, W. H. Chang, W. C. Chou, J. S. Wang, W. J. Huang, Erik S. Jeng

Appl. Phys. Lett. 90, 083116 (2007)

https://doi.org/10.1063/1.2696585

Published: February 2007

View article titled, Effect of ZnSe partial capping on the ripening dynamics of CdSe quantum dots

Journal Articles

Impacts of ammonia background flows on structural and photoluminescence properties of InN dots grown on GaN by flow-rate modulation epitaxy

W. C. Ke, L. Lee, C. Y. Chen, W. C. Tsai, W.-H. Chang, W. C. Chou, M. C. Lee, W. K. Chen, W. J. Lin, Y. C. Cheng

Appl. Phys. Lett. 89, 263117 (2006)

https://doi.org/10.1063/1.2425038

Published: December 2006

View article titled, Impacts of ammonia background flows on structural and photoluminescence properties of InN dots grown on GaN by flow-rate modulation epitaxy

Journal Articles

Photoluminescence properties of self-assembled InN dots embedded in GaN grown by metal organic vapor phase epitaxy

W. C. Ke, C. P. Fu, C. Y. Chen, L. Lee, C. S. Ku, W. C. Chou, W.-H. Chang, M. C. Lee, W. K. Chen, W. J. Lin, Y. C. Cheng

Appl. Phys. Lett. 88, 191913 (2006)

https://doi.org/10.1063/1.2203510

Published: May 2006

View article titled, Photoluminescence properties of self-assembled InN dots embedded in GaN grown by metal organic vapor phase epitaxy

Journal Articles

Advanced electrical imaging of dislocations in Mg–In-codoped GaN films

Sy-Hann Chen, Sheng-Ping Hou, J. H. Hsieh, F. C. Chang, W. K. Chen

J. Vac. Sci. Technol. B 24, 108–112 (2006)

https://doi.org/10.1116/1.2150223

Published: January 2006

View article titled, Advanced electrical imaging of dislocations in Mg–In-codoped GaN films

Journal Articles

Optical properties of self-assembled ZnTe quantum dots grown by molecular-beam epitaxy

C. S. Yang, Y. J. Lai, W. C. Chou, W. K. Chen, M. C. Lee, M. C. Kuo, J. Lee, J. L. Shen, D. J. Jang, Y. C. Cheng

J. Appl. Phys. 97, 033514 (2005)

https://doi.org/10.1063/1.1834985

Published: January 2005

View article titled, Optical properties of self-assembled ZnTe quantum dots grown by molecular-beam epitaxy

Journal Articles

Microphotoluminescence spectra of hillocks in Al 0.11 Ga 0.89 N films

W. C. Ke, C. S. Ku, H. Y. Huang, W. C. Chen, L. Lee, W. K. Chen, W. C. Chou, W. H. Chen, M. C. Lee, W. J. Lin, Y. C. Cheng, Y. T. Cherng

Appl. Phys. Lett. 85, 3047–3049 (2004)

https://doi.org/10.1063/1.1802379

Published: October 2004

View article titled, Microphotoluminescence spectra of hillocks in Al 0.11 Ga 0.89 N films

Journal Articles

Near-field optical microscopy and scanning Kelvin microscopy studies of V-defects on AlGaN ∕ GaN films

C. S. Ku, J. M. Peng, W. C. Ke, H. Y. Huang, N. E. Tang, W. K. Chen, W. H. Chen, M. C. Lee

Appl. Phys. Lett. 85, 2818–2820 (2004)

https://doi.org/10.1063/1.1799248

Published: October 2004

View article titled, Near-field optical microscopy and scanning Kelvin microscopy studies of V-defects on AlGaN ∕ GaN films

Journal Articles

Spatially-resolved photoluminescence studies of V-shaped pits on Al 0.16 Ga 0.84 N

H. Y. Huang, C. S. Ku, W. C. Ke, N. E. Tang, J. M. Peng, W. K. Chen, W. H. Chen, M. C. Lee, H. Y. Lee

J. Appl. Phys. 95, 2172–2174 (2004)

https://doi.org/10.1063/1.1637952

Published: February 2004

View article titled, Spatially-resolved photoluminescence studies of V-shaped pits on Al 0.16 Ga 0.84 N

Journal Articles

Rapid thermal annealing effects on blue luminescence of As-implanted GaN

H. Y. Huang, J. Q. Xiao, C. S. Ku, H. M. Chung, W. K. Chen, W. H. Chen, M. C. Lee, H. Y. Lee

J. Appl. Phys. 92, 4129–4131 (2002)

https://doi.org/10.1063/1.1503160

Published: October 2002

View article titled, Rapid thermal annealing effects on blue luminescence of As-implanted GaN

Journal Articles

Characteristics of deep levels in As-implanted GaN films

L. Lee, W. C. Lee, H. M. Chung, M. C. Lee, W. H. Chen, W. K. Chen, H. Y. Lee

Appl. Phys. Lett. 81, 1812–1814 (2002)

https://doi.org/10.1063/1.1499739

Published: September 2002

View article titled, Characteristics of deep levels in As-implanted GaN films

Journal Articles

Photoluminescence and photoluminescence excitation studies of as-grown and P-implanted GaN: On the nature of yellow luminescence

H. Y. Huang, C. H. Chuang, C. K. Shu, Y. C. Pan, W. H. Lee, W. K. Chen, W. H. Chen, M. C. Lee

Appl. Phys. Lett. 80, 3349–3351 (2002)

https://doi.org/10.1063/1.1476400

Published: May 2002

View article titled, Photoluminescence and photoluminescence excitation studies of as-grown and P-implanted GaN: On the nature of yellow luminescence

Journal Articles

Thermal stability study of Ni/Ta n-GaN Schottky contacts

G. L. Chen, F. C. Chang, K. C. Shen, J. Ou, W. H. Chen, M. C. Lee, W. K. Chen, M. J. Jou, C. N. Huang

Appl. Phys. Lett. 80, 595–597 (2002)

https://doi.org/10.1063/1.1425455

Published: January 2002

View article titled, Thermal stability study of Ni/Ta <em>n</em>-GaN Schottky contacts

Journal Articles

Gallium K-edge x-ray absorption study on Mg-doped GaN

Y. C. Pan, S. F. Wang, W. H. Lee, M. C. Lee, W. K. Chen, W. H. Chen, L. Y. Jang, J. F. Lee, C. I. Chiang, H. Chang, K. T. Wu, D. S. Lin

Appl. Phys. Lett. 78, 31–33 (2001)

https://doi.org/10.1063/1.1337636

Published: January 2001

View article titled, Gallium <em>K</em>-edge x-ray absorption study on Mg-doped GaN

Journal Articles

Isoelectronic As doping effects on the optical characteristics of GaN films grown by metalorganic chemical-vapor deposition

H. Y. Huang, W. C. Lin, W. H. Lee, C. K. Shu, K. C. Liao, W. K. Chen, M. C. Lee, W. H. Chen, Y. Y. Lee

Appl. Phys. Lett. 77, 2819–2821 (2000)

https://doi.org/10.1063/1.1316075

Published: October 2000

View article titled, Isoelectronic As doping effects on the optical characteristics of GaN films grown by metalorganic chemical-vapor deposition

Journal Articles

Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy

H. Y. Huang, C. K. Shu, W. C. Lin, C. H. Chuang, M. C. Lee, W. K. Chen, Y. Y. Lee

Appl. Phys. Lett. 76, 3224–3226 (2000)

https://doi.org/10.1063/1.126588

Published: May 2000

View article titled, Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy

NARROW

Topics

Carrier dynamics in isoelectronic ZnSe 1 − x O x semiconductors

Effect of donor-acceptor concentration ratios on nonradiative energy transfer in closely packed CdTe quantum dots

Time-resolved photoluminescence of isoelectronic traps in Zn Se 1 − x Te x semiconductor alloys

Pressure-induced metallization and resonant Raman scattering in Zn 1 − x Mn x Te

Raman scattering of longitudinal-optical-phonon-plasmon coupling in Cl-doped ZnSe under high pressure

Effect of ZnSe partial capping on the ripening dynamics of CdSe quantum dots

Impacts of ammonia background flows on structural and photoluminescence properties of InN dots grown on GaN by flow-rate modulation epitaxy

Photoluminescence properties of self-assembled InN dots embedded in GaN grown by metal organic vapor phase epitaxy

Advanced electrical imaging of dislocations in Mg–In-codoped GaN films

Optical properties of self-assembled ZnTe quantum dots grown by molecular-beam epitaxy

Microphotoluminescence spectra of hillocks in Al 0.11 Ga 0.89 N films

Near-field optical microscopy and scanning Kelvin microscopy studies of V-defects on AlGaN ∕ GaN films

Spatially-resolved photoluminescence studies of V-shaped pits on Al 0.16 Ga 0.84 N

Rapid thermal annealing effects on blue luminescence of As-implanted GaN

Characteristics of deep levels in As-implanted GaN films

Photoluminescence and photoluminescence excitation studies of as-grown and P-implanted GaN: On the nature of yellow luminescence

Thermal stability study of Ni/Ta n-GaN Schottky contacts

Gallium K-edge x-ray absorption study on Mg-doped GaN

Isoelectronic As doping effects on the optical characteristics of GaN films grown by metalorganic chemical-vapor deposition

Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy

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