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W. I. Wang
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Journal Articles

Effects of substrate orientation on the growth of InSb nanostructures by molecular beam epitaxy

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C. Y. Chou, A. Torfi, C. Pei, W. I. Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 193108 (2016)
https://doi.org/10.1063/1.4949486
Published: May 2016
View articletitled, Effects of substrate orientation on the growth of InSb nanostructures by molecular beam epitaxy
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Journal Articles

Improvement of GaAsSb alloys on InP grown by molecular beam epitaxy with substrate tilting

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C. Y. Chou, A. Torfi, W. I. Wang
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 153111 (2013)
https://doi.org/10.1063/1.4825220
Published: October 2013
View articletitled, Improvement of GaAsSb alloys on InP grown by molecular beam epitaxy with substrate tilting
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Journal Articles

Selective area growth of InAs on InP with dielectric mask

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C. Y. Chou, A. Torfi, W. I. Wang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 031806 (2013)
https://doi.org/10.1116/1.4804400
Published: May 2013
View articletitled, Selective area growth of InAs on InP with dielectric mask
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Journal Articles

Interface and optical properties of In Ga As N Sb ∕ Ga As quantum wells on GaAs (411) substrates by molecular beam epitaxy

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W. Li, C. Pei, A. Torfi, D. Moscicka, W. I. Wang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 25, 1533–1535 (2007)
https://doi.org/10.1116/1.2748411
Published: July 2007
View articletitled, Interface and optical properties of In Ga As N Sb ∕ Ga As quantum wells on GaAs (411) substrates by molecular beam epitaxy
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Journal Articles

Molecular-beam epitaxy of phosphor-free 1.3 μ m InAlGaAs multiple-quantum-well lasers on InP (100)

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W. Li, D. Moscicka, A. Torfi, W. I. Wang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 25, 1090–1092 (2007)
https://doi.org/10.1116/1.2737434
Published: May 2007
View articletitled, Molecular-beam epitaxy of phosphor-free 1.3 μ m InAlGaAs multiple-quantum-well lasers on InP (100)
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Journal Articles

Midinfrared InGaAsSb quantum well lasers with digitally grown tensile-strained AlGaAsSb barriers

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W. Li, H. Shao, D. Moscicka, A. Torfi, W. I. Wang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 25, 1083–1086 (2007)
https://doi.org/10.1116/1.2723758
Published: May 2007
View articletitled, Midinfrared InGaAsSb quantum well lasers with digitally grown tensile-strained AlGaAsSb barriers
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Journal Articles

Type-II In As ∕ Ga Sb superlattices grown on GaSb (311)B by molecular beam epitaxy for long-wavelength infrared applications

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H. Shao, W. Li, A. Torfi, D. Moscicka, W. I. Wang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 2144–2147 (2006)
https://doi.org/10.1116/1.2214705
Published: July 2006
View articletitled, Type-II In As ∕ Ga Sb superlattices grown on GaSb (311)B by molecular beam epitaxy for long-wavelength infrared applications
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Journal Articles

Hydrogen-plasma assisted molecular beam epitaxial growth of high-purity InAs

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Y. Q. Chen, T. Unuvar, D. Moscicka, W. I. Wang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 1599–1603 (2006)
https://doi.org/10.1116/1.2192530
Published: May 2006
View articletitled, Hydrogen-plasma assisted molecular beam epitaxial growth of high-purity InAs
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Journal Articles

Midinfrared In As ∕ In Ga Sb “W” diode lasers with digitally grown tensile-strained AlGaAsSb barriers

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W. Li, J. B. Héroux, H. Shao, W. I. Wang, I. Vurgaftman, J. R. Meyer
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 23, 1136–1139 (2005)
https://doi.org/10.1116/1.1868700
Published: June 2005
View articletitled, Midinfrared In As ∕ In Ga Sb “W” diode lasers with digitally grown tensile-strained AlGaAsSb barriers
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Journal Articles

Epitaxial growth of InGaAsSb/AlGaAsSb heterostructures for mid-infrared lasers based on strain engineering

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J. B. Héroux, C. W. Pei, W. I. Wang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 22, 2240–2243 (2004)
https://doi.org/10.1116/1.1775196
Published: August 2004
View articletitled, Epitaxial growth of InGaAsSb/AlGaAsSb heterostructures for mid-infrared lasers based on strain engineering
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Journal Articles

Molecular beam epitaxial growth of mid-infrared InGaAsSb laser diodes on indium-free GaSb substrates

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C. W. Pei, J. B. Héroux, W. I. Wang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 22, 1460–1462 (2004)
https://doi.org/10.1116/1.1740768
Published: June 2004
View articletitled, Molecular beam epitaxial growth of mid-infrared InGaAsSb laser diodes on indium-free GaSb substrates
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Journal Articles

Strain-compensated InGaAsSb/AlGaAsSb mid-infrared quantum-well lasers

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W. Li, J. B. Héroux, H. Shao, W. I. Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 84, 2016–2018 (2004)
https://doi.org/10.1063/1.1687981
Published: March 2004
View articletitled, Strain-compensated InGaAsSb/AlGaAsSb mid-infrared quantum-well lasers
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Journal Articles

InGaAsSbN: A dilute nitride compound for midinfrared optoelectronic devices

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W. Li, J. B. Héroux, W. I. Wang
Journal: Journal of Applied Physics
J. Appl. Phys. 94, 4248–4250 (2003)
https://doi.org/10.1063/1.1606514
Published: October 2003
View articletitled, InGaAsSbN: A dilute nitride compound for midinfrared optoelectronic devices
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Journal Articles

Photoreflectance spectroscopy of strained (In)GaAsN/GaAs multiple quantum wells

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J. B. Héroux, X. Yang, W. I. Wang
Journal: Journal of Applied Physics
J. Appl. Phys. 92, 4361–4366 (2002)
https://doi.org/10.1063/1.1507817
Published: October 2002
View articletitled, Photoreflectance spectroscopy of strained (In)GaAsN/GaAs multiple quantum wells
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Journal Articles

High quality GaAs grown on Si-on-insulator compliant substrates

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C. W. Pei, J. B. Héroux, J. Sweet, W. I. Wang, J. Chen, M. F. Chang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 20, 1196–1199 (2002)
https://doi.org/10.1116/1.1481753
Published: June 2002
View articletitled, High quality GaAs grown on Si-on-insulator compliant substrates
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Journal Articles

Optical characterization of strained InGaAsN/GaAs multiple quantum wells

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J. B. Héroux, X. Yang, W. I. Wang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 20, 1154–1157 (2002)
https://doi.org/10.1116/1.1481752
Published: June 2002
View articletitled, Optical characterization of strained InGaAsN/GaAs multiple quantum wells
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Journal Articles

Mechanism of the reduction of dislocation density in epilayers grown on compliant substrates

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C. W. Pei, B. Turk, W. I. Wang, T. S. Kuan
Journal: Journal of Applied Physics
J. Appl. Phys. 90, 5959–5962 (2001)
https://doi.org/10.1063/1.1413712
Published: December 2001
View articletitled, Mechanism of the reduction of dislocation density in epilayers grown on compliant substrates
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Journal Articles

GaN grown by molecular beam epitaxy with antimony as surfactant

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C. W. Pei, B. Turk, J. B. Héroux, W. I. Wang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 19, 1426–1428 (2001)
https://doi.org/10.1116/1.1374627
Published: July 2001
View articletitled, GaN grown by molecular beam epitaxy with antimony as surfactant
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Journal Articles

InGaAsNSb/GaAs quantum wells for 1.55 μm lasers grown by molecular-beam epitaxy

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X. Yang, J. B. Héroux, L. F. Mei, W. I. Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 78, 4068–4070 (2001)
https://doi.org/10.1063/1.1379787
Published: June 2001
View articletitled, InGaAsNSb/GaAs quantum wells for 1.55 μm lasers grown by molecular-beam epitaxy
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Journal Articles

Molecular-beam epitaxial growth of high electron mobility AlGaN/GaN heterostructures

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L. K. Li, B. Turk, W. I. Wang, S. Syed, D. Simonian, H. L. Stormer, D. V. Lang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 18, 1472–1475 (2000)
https://doi.org/10.1116/1.591406
Published: May 2000
View articletitled, Molecular-beam epitaxial growth of high electron mobility AlGaN/GaN heterostructures
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